US20090212018A1 - Apparatus and method for producing microcomponents and use of - Google Patents

Apparatus and method for producing microcomponents and use of Download PDF

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Publication number
US20090212018A1
US20090212018A1 US12/330,028 US33002808A US2009212018A1 US 20090212018 A1 US20090212018 A1 US 20090212018A1 US 33002808 A US33002808 A US 33002808A US 2009212018 A1 US2009212018 A1 US 2009212018A1
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United States
Prior art keywords
substrate
microcomponents
temperature
photoresist
stripping
Prior art date
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Abandoned
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US12/330,028
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English (en)
Inventor
Josef Mathuni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Muegge GmbH
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R3T Rapid Reactive Radicals Technology GmbH
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Assigned to R3T GMBH RAPID REACTIVE RADICALS TECHNOLOGY reassignment R3T GMBH RAPID REACTIVE RADICALS TECHNOLOGY ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MATHUNI, JOSEF
Publication of US20090212018A1 publication Critical patent/US20090212018A1/en
Assigned to MUEGGE GMBH reassignment MUEGGE GMBH MERGER (SEE DOCUMENT FOR DETAILS). Assignors: R3T GMBH RAPID REACTIVE RADICAL TECHNOLOGY
Priority to US13/599,985 priority Critical patent/US8815746B2/en
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/0085—Manufacture of substrate-free structures using moulds and master templates, e.g. for hot-embossing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/03—Processes for manufacturing substrate-free structures
    • B81C2201/032—LIGA process

Definitions

  • the invention relates to an apparatus for producing microcomponents with component structures which are generated in a process chamber on a substrate according to the LIGA method.
  • the invention further relates to a method for producing microcomponents with component structures in which the microcomponents are generated in provided substrates and thereafter are relieved from the enclosing material sections, such that the material sections can be etched away (stripped).
  • the invention further relates to the use of such an apparatus and method for stripping or removing the material sections enclosing the microcomponents.
  • Apparatuses and methods of this kind with which microcomponents are produced for the clock industry are well known from the state of the art. Methods are frequently used here which are based on a combination of lithography and electroplating. These methods are generally well known as LIGA methods. In such a “LIGA” method, a photoresist can be applied at first to a substrate such as a wafer or the like. A negative resist with the designation SU-8 can be used as a photoresist.
  • the substrate can concern a silicon wafer for example which comprises a thin gold layer on its surface on which microcomponents can grow especially well.
  • the photoresist is applied to this silicon wafer. It especially covers the gold layer and can be exposed there selectively by means of a suitable exposure system and a mask. The unexposed places of the photoresist layer are removed in a subsequent development step.
  • a metal such as nickel or gold can be allowed to grow on the thus prepared substrate surface, with the respective metal beginning to grow on the places stripped of the photoresist layer.
  • growth can be stopped when the grown metal structure grows slightly beyond the photoresist layer.
  • Photoresist SU-8 comes with the disadvantage that the removal of the cross-linked SU-8 structures between metal structures deposited by electroplating is currently very complex. SU-8 is based on epoxy resin which in the cross-linked state is very stable against organic and inorganic etchants. Photoresist is removed by means of currently known etchants either very slowly or in such a way that the metallic microcomponents are also attacked and thus become useless.
  • the end of the stripping process i.e. the removal of the photoresist
  • the end of the stripping process is determined on the basis of integral temperature measurement by means of emission spectroscopy, which entails very high costs.
  • photoresist is removed in an etching chamber in batch operations from several microcomponents on the respective substrates, it was only possible to date to recognize the start of the etching process by means of a rise in the integral process temperature and the global end of the etching process by means of the drop in the integral process temperature. It was not possible to individually monitor the individual substrates which may have differently thick layers of photoresist and thus require differently long stripping periods. It was further not possible to recognize in time whether an individual substrate will become too hot due to a bad contact to the substrate holder for example which rests on a work plate and will thus be damaged.
  • WO 2004/104704 A2 discloses a lithographic method for producing microcomponents. It is tried to form etching chambers in a constructional way, through which removal of SU-8 is facilitated. Several intermediate steps are added as a result of additional bonding layers, support structures, masks and exposure steps, through which construction and production of the microcomponents becomes more laborious.
  • the invention is based on the object of ensuring that the photoresist is to be stripped as easily, efficiently and reliably as possible, so that rejects are minimized.
  • the simplicity of production shall be achieved by utilizing and combining already existing techniques and systems with as few as possible, but effective additional steps.
  • Efficiency of production shall be raised by the possibility of simultaneous treatment of several substrates in an etching chamber and by reducing the stripping duration through an increased removal rate of the photoresist.
  • the reliability of the production and thus the reduction in the number of the damaged microcomponents shall be implemented with the help of individual temperature monitoring and lowering the substrate temperature and by avoiding aggressive etchants.
  • the object of the invention is achieved in respect of its method in such a way that the photo-resist is stripped with the help of a cooled remote plasma source by chemical etching due to the increased density of the radicals, with the temperature of the microcomponents being monitored individually and the progression of the temperature being subjected to the recognition of an end point.
  • the use of a remote plasma source for stripping photoresist offers the advantage that no ions or electrons will reach the substrate and place a thermal load on the same.
  • the radicals strip the photoresist through pure chemical etching.
  • the density of radicals is increased by using a microwave source such as the one from R3T GmbH.
  • a suitable apparatus by means of which the etching process as explained above can be performed especially well is described in the patent specification DE 198 47 848 C1.
  • the apparatus described there comprises a generator for generating electromagnetic waves such as a microwave generator.
  • the electromagnetic waves can be used to form excited and/or ionized particles in a plasma zone.
  • At least the excited particles are conveyed by means of a suitable feed line to the etching chamber in order to trigger there the desired etching process on the surfaces of the substrates.
  • a suitable feed line to the etching chamber in order to trigger there the desired etching process on the surfaces of the substrates.
  • thermal sensors are distributed over the entire work area for individually checking the local substrate temperatures. They are held in a resilient manner in the work plate, so that a mechanical and thus thermal contact is ensured with the bottom side of a substrate holder on which the substrate is located. It is understood that the substrate can also be placed directly on the work plate, and in this case the thermal sensors would have direct contact with the bottom side of the substrate. It has been seen that as a result of the temperature data measured in real time, especially on each of the substrates, it is possible to draw precise conclusions on the progress of the etching process, advantageously on each of the substrates.
  • substrate describes any structure which can be used as a carrier on which the microstructures can grow. Widely used as silicon wafers which can be provided with a thin gold layer, with said gold layer being used as a starting layer from which the microstructures will grow. In the present connection, the term wafer shall generally be used synonymously for the term “substrate”.
  • “Substrate holders” shall mean such structures which can produce contact between the substrates and the work plate.
  • a substrate is applied to their upper side by means of a contact means and the work plate is located on its bottom side. It is ensured that heat from the substrates which become hot as a result of reaction heat is forwarded via the contact means to the substrate holder and from there to the work plate.
  • a substrate holder is used for horizontally planar positioning of a substrate in an etching chamber.
  • any devices are suitable as a “work plate” on which the provided substrates can be arranged either with or with a substrate holder within the etching chamber.
  • a cooling medium flows through the work plate in order to thus enable the removal of the process heat from the etching chamber.
  • etching chamber describes any device in which the production of microstructures can be made.
  • a photoresist layer can be removed from a substrate surface and/or a microstructure surface for example.
  • contact means describes any means which is suitable of improving the contact between the provided substrates and the substrate holders, so that temperature differences between the provided substrates and the work plate can be compensated in a better way than without such contact means. It is understood that such contact means can be realized in many ways as long as an especially intimate contact is produced between the substrate and the substrate holder.
  • these contact means provide a substantially better contact between the provided substrates and the substrate holders, so that critical thermal energy present in the substrates and/or the microstructures can be dissipated in a substantially better way into the work plate, thus considerably reducing a thermal loading of the substrates, and the microstructures in particular, in an advantageous manner.
  • the likelihood is reduced or ideally excluded that the microstructures to be produced are damaged or even rendered useless as a result of critical temperature conditions.
  • the contact means comprise wax
  • the wax can be removed easily from the substrates or the microstructures that have grown thereon when an etching process has been completed for example and the microstructures are to be relieved of further impurities.
  • Wax as a contact means allows compensating in a very effective way for very small uneven portions on the bottom side of the substrate and/or the upper side of the substrate holder caused by possible production faults or undesirable particles, so that the substrate is aligned in an horizontally planar way and is thus provided with optimal contact to the substrate holder and thus to the work plate, thus producing a favorable thermal contact for heat dissipation.
  • the transmitted temperatures rise at the beginning of the stripping process from a starting temperature such as the temperature of the work plate to the respective temperature maximum as a result of reaction heat and remain stable as long as the reaction progresses. With the end of the stripping process, the temperatures start to decrease rapidly. The start, middle, end or other suitable places of the decreasing flank of the individual temperature curve is recognized as the individual end point of the stripping process.
  • a monitoring device which can be a computer or the like for example and displays and monitors the temperatures individually sent by the thermal sensors signalizes the end of the stripping process either acoustically and/or visually, so that the operator optionally removes the finished stripped microcomponent from the etching chamber or waits until further microcomponents have been completely stripped.
  • the object of the invention is achieved by means of the apparatus in such a way that a microwave source is arranged outside of the etching chamber to increase the density of the radicals.
  • a plasma chamber outside of the etching chamber is further advantageous.
  • said plasma chamber is cooled with a cooling medium.
  • Water or other agents are considered as cooling medium for example which are able to dissipate heat from the plasma chamber.
  • a remote plasma method can preferably be used in this connection in which the plasma is generated advantageously outside of an etching chamber and ideally no ions and/or electrons reach a substrate within the etching chamber.
  • the substrate is advantageously not additionally thermally loaded by these ions or electrons.
  • an already cooled radical particle beam with a density of radicals can be provided favorably especially with the apparatus as described above from the patent specification DE 198 47 848 C1.
  • the arrangement of the spring-supported thermal sensors in the work place beneath the substrate positions is especially advantageous.
  • the thermal sensors have contact with the bottom side of the substrate holder or with the bottom side of the substrate when no substrate holders are used.
  • a spring-supported thermal sensor is associated with each employed substrate or substrate holder. Individual temperature measurement and monitoring of each substrate in real time are thus ensured.
  • a monitoring device will be used which will individually display the temperatures in real time determined by the thermal sensors and will monitor them by means of suitable criteria.
  • the monitoring comprises the determination of the end points and signaling the termination of the stripping processes. It shall further be monitored whether a stripping process will run according to a pre-determined scheme. If malfunctions occur such as the overheating of a substrate, the monitoring device will signalize this malfunction and will initiate suitable measures so that the substrate will not be damaged.
  • the arrangement of a monitoring device at a location which need not necessarily be close to the plasma chamber is further advantageous.
  • the operator can conveniently observe the stripping process in real time from his/her office.
  • the operator can decide whether or not this completed microcomponent is removed from the etching chamber.
  • FIG. 1 shows a sectional enlarged view of a microcomponent on a substrate produced according to the LIGA method
  • FIG. 2 shows a sectional view of an apparatus for producing microcomponents
  • FIG. 3 shows a detailed view of the work plate of FIG. 2 .
  • FIG. 4 shows an exemplary visualization of three temperature curves of three substrates.
  • FIG. 1 shows a microcomponent on a substrate 14 produced according to the LIGA method.
  • Photoresist 1 encloses the metal 2 which was electroplated to a gold layer 3 which is used as a starter layer.
  • the apparatus 10 for producing microstructures (not shown here) as shown in FIG. 2 comprises an etching chamber 12 in which a thermostatized work plate 13 is arranged.
  • a microwave source 18 is arranged outside of the etching chamber 12 . Furthermore, a water-cooled plasma chamber 11 is shown which is also located outside of the etching chamber 12 . The microwave source 18 can be used to produce cooled remote plasma 19 in the water-cooled plasma chamber 11 .
  • a detailed description of how the present remote plasma process works in detail shall be omitted in this case because the remote plasma process concerns a well-known method.
  • a respectively suitable apparatus and respectively suitable methods are also described in detail in the initially mentioned patent specification DE 198 47 848 C1.
  • the generated remote plasma 19 is advantageously already cooled by means of the water-cooled plasma chamber 11 , so that in this way an advantageous reduction in temperature can already be realized concerning the etching process yet to be explained.
  • the present remote plasma method can be controlled by means of the apparatus 10 shown here in such a way that a cooled radical particle beam 20 will reach the etching chamber 12 with an especially high density of radicals.
  • substrates 14 are arranged on a thermostatized work plate 13 .
  • two substrates 14 are placed by means of two substrate holders 15 on the work plate 13 .
  • Reaction heat which is produced during an etching process for example in which areas of material (not shown here) such as the photoresist layer SU-8 are etched away from the substrates 14 can be dissipated away from the substrates 14 in an especially advantageous manner. This dissipation of the reaction heat is achieved especially well when the two substrate holders 15 are made of thermally well-conducting material.
  • a contact means 16 (see FIG. 3 in particular) is each arranged between the substrates 14 and the respective substrate holders 15 . These layers of contact means are also used for horizontally planar positioning of the substrates 14 on the substrate holders 15 in the etching chamber 12 .
  • the contact means 16 in this embodiment is made of wax.
  • the wax layers are used to position the substrates 14 in a fixed but detachable way and individually above the respective substrate holders 15 .
  • Both the wax layers as well as the substrate holders 15 especially represent means within the terms of the invention for placing in a planar way the provided substrates 14 on the thermostatized work plate 13 .
  • the wax layers ensure very advantageously that the already mentioned reaction heat is dissipated from the substrates 14 and thus also from the microstructures (not shown here explicitly) to be produced, so that especially the microstructures are also thermally loaded in a lesser way, as a result of which the rejection of microstructures can be reduced advantageously.
  • thermostatized thermal sensors 17 are provided in the thermostatized work plate 13 which can be used to detect the current temperatures directly on the substrate holders 15 .
  • a thermal sensor 17 is preferably associated with each substrate holder 15 and each substrate 14 which is arranged on the work plate 13 . It can thus reliably and permanently be ensured that each of the existing thermal sensors 17 is in operative contact with the associated substrate holder 15 .
  • thermal sensors 17 When the thermal sensors 17 are held in a resilient or spring-supported manner, as shown in FIG. 3 , it can be ensured especially well that the thermal sensors 17 are always pressed with sufficient force against the substrate holders 15 .
  • the present apparatus 10 comprises a suitable monitoring device which offers the possibility for visualizing the detected temperature data by means of display means 24 .
  • the present example visually shows in the display means 24 a first temperature curve 21 of a substrate 14 , a second temperature curve 22 of another substrate 14 and a third temperature curve 23 of a third substrate (not shown here).
  • the temperature curves 21 , 22 and 23 show the respective temperatures on the respective substrates 14 over a specific period of time. It is described on the basis of the first temperature curve 21 in which phase the first substrate 14 is located.
  • the substrate 14 on which the first spring-supported thermal sensor 17 is arranged has an initial temperature 21 a which is close to the temperature of the thermostatized work plate.
  • the temperature on the substrate 14 rises to an equilibrium temperature 21 b .
  • the equilibrium temperature will occur when the temperature gradient occurring towards the work plate 13 is dissipating the reaction heat from the substrate 14 .
  • the equilibrium temperature remains virtually constant as long as the stripping process occurs in this substrate 14 .
  • the temperature will start to drop.
  • the start, middle, end or other suitable places of the decreasing flank of the temperature curve can be recognized as the end point of the stripping process 21 c .
  • the possibility for setting an optimal etching duration is given by suitable setting of the end point recognition.
  • the present apparatus can be used to display different temperatures and different temperature curves 21 , 22 , 23 in connection with each of the substrates 14 , so that an evaluation of the respectively occurring etching process on the respective substrate 14 can be made rapidly and securely.
  • Reasons for the different temperature curves can be differently running reactions on the respective substrate 14 which may indicate differently thick layers of resist.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
US12/330,028 2007-12-12 2008-12-08 Apparatus and method for producing microcomponents and use of Abandoned US20090212018A1 (en)

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DE102007059717A DE102007059717B4 (de) 2007-12-12 2007-12-12 Vorrichtung und Verfahren zur Herstellung von Mikrobauteilen sowie Verwendung einer derartigen Vorrichtung
DE102007059717.9 2007-12-12

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US20210391156A1 (en) * 2020-06-10 2021-12-16 Applied Materials, Inc. Clean unit for chamber exhaust cleaning

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4139051A (en) * 1976-09-07 1979-02-13 Rockwell International Corporation Method and apparatus for thermally stabilizing workpieces
US6352870B1 (en) * 2000-06-12 2002-03-05 Advanced Micro Devices, Inc. Method of endpointing plasma strip process by measuring wafer temperature
US20060275711A1 (en) * 2005-06-07 2006-12-07 Chien-Chung Fu Method of manufacturing a LIGA mold by backside exposure
US7288484B1 (en) * 2004-07-13 2007-10-30 Novellus Systems, Inc. Photoresist strip method for low-k dielectrics

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DE19847848C1 (de) * 1998-10-16 2000-05-11 R3 T Gmbh Rapid Reactive Radic Vorrichtung und Erzeugung angeregter/ionisierter Teilchen in einem Plasma
US6534921B1 (en) * 2000-11-09 2003-03-18 Samsung Electronics Co., Ltd. Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system
DE10323350A1 (de) * 2003-05-23 2004-12-23 INSTITUT FüR MIKROTECHNIK MAINZ GMBH Lithographisches Verfahren zur Herstellung von Mikrobauteilen
JP2005048259A (ja) * 2003-07-31 2005-02-24 Matsushita Electric Ind Co Ltd プラズマ処理装置
US7387968B2 (en) * 2005-11-08 2008-06-17 Tokyo Electron Limited Batch photoresist dry strip and ash system and process
US8343280B2 (en) * 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US4139051A (en) * 1976-09-07 1979-02-13 Rockwell International Corporation Method and apparatus for thermally stabilizing workpieces
US6352870B1 (en) * 2000-06-12 2002-03-05 Advanced Micro Devices, Inc. Method of endpointing plasma strip process by measuring wafer temperature
US7288484B1 (en) * 2004-07-13 2007-10-30 Novellus Systems, Inc. Photoresist strip method for low-k dielectrics
US20060275711A1 (en) * 2005-06-07 2006-12-07 Chien-Chung Fu Method of manufacturing a LIGA mold by backside exposure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"GaSonics IPC Model L3510 Ashing System" (Web page) *

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EP2070869A3 (de) 2013-12-18
EP2070869A2 (de) 2009-06-17
EP2070869B1 (de) 2016-10-05
US20120325264A1 (en) 2012-12-27
DE102007059717A1 (de) 2009-06-18
US8815746B2 (en) 2014-08-26
DE102007059717B4 (de) 2011-02-03

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