US20090315050A1 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
US20090315050A1
US20090315050A1 US12/307,198 US30719807A US2009315050A1 US 20090315050 A1 US20090315050 A1 US 20090315050A1 US 30719807 A US30719807 A US 30719807A US 2009315050 A1 US2009315050 A1 US 2009315050A1
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Prior art keywords
light emitting
emitting device
layer
semiconductor layer
electrode
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Abandoned
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US12/307,198
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English (en)
Inventor
Sang Youl Lee
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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Assigned to LG INNOTEK CO., LTD. reassignment LG INNOTEK CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: LEE, SANG YOUL
Publication of US20090315050A1 publication Critical patent/US20090315050A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material

Definitions

  • the embodiment relates to a semiconductor light emitting device.
  • a semiconductor light emitting device comprises an LED (light emitting diode), an LD (laser diode) and the like.
  • a semiconductor light emitting device is used to convert electrical signals into infrared rays, visible rays and the like by using the characteristics of a compound semiconductor and to exchange the converted signals.
  • an LED has been widely used for household electrical appliances, remote controllers, electric light boards, indicators, and various automation devices, and is largely classified as an IRED (infrared emitting diode) and a VLED (visible light emitting diode).
  • IRED infrared emitting diode
  • VLED visible light emitting diode
  • an LED having a small size is fabricated in the form of a surface mount device so that the LED is directly mounted on a PCB (printed circuit board). Accordingly, an LED lamp used as a display device is also fabricated in the form of a surface mount device. Such a surface mount device can replace an existing simple lighting lamp and is used as a lighting indicator producing various colors, a character indicator, an image indicator and the like.
  • such a semiconductor light emitting device has been used for various fields, for example, electric lights for daily life, electric lights for outputting rescue signals and the like. Further, demand for a high brightness semiconductor light emitting device has increased more and more. Thus, a high-power light emitting device has been actively developed.
  • the embodiment provides a semiconductor light emitting device capable of improving the total light emitting efficiency by preventing light generated from an active layer from being absorbed by electrodes.
  • An embodiment provides a semiconductor light emitting device comprising: a first semiconductor layer; a second semiconductor layer; an active layer formed between the first semiconductor layer and the second semiconductor layer; a first reflective electrode on the first semiconductor layer to reflect incident light; and a second reflective electrode on the second semiconductor layer to reflect the incident light.
  • An embodiment provides a semiconductor light emitting device comprising: a first semiconductor layer; a second semiconductor layer; an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; and a second electrode on the second semiconductor layer, wherein at least one of the first electrode and the second electrode is divided into a plurality of electrodes.
  • light generated from an active layer is prevented from being absorbed by electrodes, so that the total light emitting efficiency can be improved.
  • FIG. 1 is a sectional view schematically showing the stack structure of a semi-conductor light emitting device according to a first embodiment
  • FIG. 2 is a sectional view schematically showing the stack structure of a semi-conductor light emitting device according to a second embodiment
  • FIG. 3 is a sectional view schematically showing the stack structure of a semi-conductor light emitting device according to a third embodiment
  • FIG. 4 is a sectional view schematically showing the stack structure of a semi-conductor light emitting device according to a fourth embodiment.
  • FIG. 5 is a sectional view schematically showing the stack structure of a semi-conductor light emitting device according to a fifth embodiment.
  • a layer (or film), a region, a pattern, or a structure is referred to as being “on” or “under” another substrate, another layer (or film), another region, another pad, or another pattern, it can be “directly” or “indirectly” on the other substrate, layer (or film), region, pad, or pattern, or one or more intervening layers may also be present.
  • FIG. 1 is a sectional view schematically showing the stack structure of a semi-conductor light emitting device according to a first embodiment.
  • the semiconductor light emitting device 100 comprises a substrate 110 , a buffer layer 120 , a first semiconductor layer for example, an n-type semiconductor layer 130 , an active layer 140 , a second semiconductor layer for example, a p-type semiconductor layer 150 , a transparent electrode 160 , a first reflective electrode for example, an n-type reflective electrode 170 , and a second reflective electrode for example, a p-type reflective electrode 180 .
  • the substrate 110 is formed of one selected from the group consisting of Al 2 O 3 , Si, SiC, GaAs, ZnO, MgO or a compound thereof.
  • the buffer layer 120 may have a stack structure such as AlInN/GaN, In x Ga 1-x N/GaN, Al x In y Ga 1-x-y N/In x Ga 1-x N/GaN and the like.
  • the n-type semiconductor layer 130 and the p-type semiconductor layer 150 may comprise nitride semiconductor layers, respectively.
  • the active layer 140 is formed between the n-type semiconductor layer 130 and the p-type semiconductor layer 150 .
  • the active layer 140 may have a single quantum well structure or a multi-quantum well structure.
  • the transparent electrode 160 is formed on the p-type semiconductor layer 150 .
  • the transparent electrode 160 comprises materials that have superior light transmittance and increase diffusion of electric current.
  • the transparent electrode 160 may be formed of transparent conductive oxide layer, such as ITO, CTO, SnO 2 , ZnO, RuO x , TiO x , IrO x or Ga x O y .
  • the p-type reflective electrode 180 is formed on the transparent electrode 160
  • the n-type reflective electrode 170 is formed on the n-type semiconductor layer 130 .
  • the p-type reflective electrode 180 and the n-type reflective electrode 170 comprise metal containing reflective material to serve as a bonding pad.
  • the p-type reflective electrode 180 and the n-type reflective electrode 170 comprise reflective material such as Ag or Al to have a single layer structure or a multi-layer structure.
  • the transparent electrode 160 and the n-type reflective electrode 170 serve as an ohmic contact layer.
  • the n-type reflective electrode 170 can be formed with an ohmic contact layer by using reflective material such as Al. Further, the n-type reflective electrode 170 can be formed with an ohmic contact layer by using Ti, Cr and the like. Furthermore, the n-type reflective electrode 170 may have a thickness less than several nm in order to increase the reflectivity of a reflective layer.
  • the transparent electrode 160 is located below the p-type reflective electrode 180 .
  • the transparent electrode 160 serves as an ohmic contact layer.
  • the p-type reflective electrode 180 can serve as a reflective layer.
  • the p-type reflective electrode 180 can be prepared in the form of a bonding pad, in which an ohmic contact layer is formed by Ti or Cr having a thickness less than several nm and a reflective layer is additionally formed.
  • the n-type and p-type reflective electrodes 170 and 180 are provided thereto, so that the light generated from the active layer 140 can be prevented from being absorbed by the n-type and p-type reflective electrodes 170 and 180 .
  • the light generated from the active layer 140 is reflected from the side or bottom surfaces of the n-type and p-type reflective electrodes 170 and 180 instead of being absorbed by the n-type and p-type reflective electrodes 170 and 180 .
  • the semiconductor light emitting device 100 of the first embodiment can improve the brightness thereof. Further, the semiconductor light emitting device 100 of the first embodiment can be applied to a low-power semiconductor light emitting device as well as a high-power semiconductor light emitting device.
  • FIGS. 2 to 5 show an example of the semiconductor light emitting device comprising divided reflective electrodes.
  • either an n-type reflective electrode or a p-type reflective electrode can be divided, or both the n-type reflective electrode and the p-type reflective electrode can also be divided.
  • the divided n-type reflective electrodes are electrically interconnected, and the divided p-type reflective electrodes are also electrically interconnected.
  • the divided n-type reflective electrodes can be patterned on the same plane and the divided p-type reflective electrodes can also be patterned on the same plane.
  • FIG. 2 is a sectional view schematically showing the stack structure of a semi-conductor light emitting device according to a second embodiment.
  • the semiconductor light emitting device 200 comprises a substrate 210 , a buffer layer 220 , an n-type semi-conductor layer 230 , an active layer 240 , a p-type semiconductor layer 250 , a transparent electrode 260 , p-type reflective electrodes 280 and 285 , and n-type reflective electrodes 270 , 272 and 274 .
  • two p-type reflective electrodes 280 and 285 and three n-type reflective electrodes 270 , 272 and 274 are formed.
  • the two p-type reflective electrodes 280 and 285 formed through division are electrically interconnected.
  • the two p-type reflective electrodes 280 and 285 can be patterned on the same plane in the form of a substantial ‘ ’ shape.
  • the three n-type reflective electrodes 270 , 272 and 274 formed through division are electrically interconnected.
  • the three n-type reflective electrodes 270 , 272 and 274 can be patterned on the same plane.
  • the two p-type reflective electrodes 280 and 285 are formed on the transparent electrode 260 , and the three n-type reflective electrodes 270 , 272 and 274 are formed on the n-type semiconductor layer 230 .
  • the two p-type reflective electrodes 280 and 285 and the three n-type reflective electrodes 270 , 272 and 274 are formed through division, so that various light paths can be ensured even when an area, in which the reflective electrodes are formed in the second embodiment, is equal to that in which the reflective electrodes are formed in the first embodiment. Accordingly, the light generated from the active layer 240 can be more efficiently emitted to the upward direction. As a result, the brightness of the semiconductor light emitting device comprising the divided reflective electrodes can be increased more and more.
  • the second embodiment shows an example in which the electrodes formed through division are reflective electrodes.
  • the electrodes formed through division may be typical electrodes, other than the reflective electrodes, which are applied to fields related to a semiconductor light emitting device.
  • FIG. 3 is a sectional view schematically showing the stack structure of a semi-conductor light emitting device according to a third embodiment.
  • the semiconductor light emitting device 300 comprises a substrate 310 , a buffer layer 320 , an n-type semi-conductor layer 330 , an active layer 340 , a p-type semiconductor layer 350 , a transparent electrode 360 , p-type reflective electrodes 380 and 385 , and an n-type reflective electrode 370 .
  • two p-type reflective electrodes 380 and 385 and one n-type reflective electrode 370 are formed.
  • the two p-type reflective electrodes 380 and 385 formed through division are electrically interconnected.
  • the two p-type reflective electrodes 380 and 385 can be patterned on the same plane in the form of a substantial ‘ ’ shape.
  • the two p-type reflective electrodes 380 and 385 are formed on the transparent electrode 360 , and the one n-type reflective electrode 370 is formed on the n-type semiconductor layer 330 .
  • the two p-type reflective electrodes 380 and 385 are formed through division, so that various light paths can be ensured and the light generated from the active layer 340 can be more efficiently emitted to the upward direction. Accordingly, the brightness of the semiconductor light emitting device comprising the divided reflective electrodes can be increased more and more.
  • the third embodiment shows an example in which the electrodes formed through division are reflective electrodes.
  • the electrodes formed through division may be typical electrodes, other than the reflective electrodes, which are applied to fields related to a semiconductor light emitting device.
  • FIG. 4 is a sectional view schematically showing the stack structure of a semi-conductor light emitting device according to a fourth embodiment.
  • the semiconductor light emitting device 400 comprises a substrate 410 , a buffer layer 420 , an n-type semi-conductor layer 430 , an active layer 440 , a p-type semiconductor layer 450 , a transparent electrode 460 , p-type reflective electrodes 480 and 485 , and n-type reflective electrodes 470 and 475 .
  • two p-type reflective electrodes 480 and 485 and two n-type reflective electrodes 470 and 475 are formed.
  • the two p-type reflective electrodes 480 and 485 formed through division are electrically interconnected.
  • the two p-type reflective electrodes 480 and 485 can be patterned on the same plane in the form of a substantial ‘ ’ shape.
  • the two n-type reflective electrodes 470 and 475 formed through division are electrically interconnected.
  • the two n-type reflective electrodes 470 and 475 can be patterned on the same plane in the form of a substantial ‘ ’ shape.
  • the two p-type reflective electrodes 480 and 485 are formed on the transparent electrode 460
  • the two n-type reflective electrodes 470 and 475 are formed on the n-type semiconductor layer 430 .
  • the two p-type reflective electrodes 480 and 485 and the two n-type reflective electrodes 470 and 475 are formed through division, so that various light paths can be ensured and the light generated from the active layer 440 can be more efficiently emitted to the upward direction. Accordingly, the brightness of the semiconductor light emitting device comprising the divided reflective electrodes can be increased more and more.
  • the fourth embodiment shows an example in which the electrodes formed through division are reflective electrodes.
  • the electrodes formed through division may also comprise typical electrodes, other than the reflective electrodes, which are applied to fields related to a semiconductor light emitting device.
  • FIG. 5 is a sectional view schematically showing the stack structure of a semi-conductor light emitting device according to a fifth embodiment.
  • the semiconductor light emitting device 500 comprises a substrate 510 , a buffer layer 520 , an n-type semi-conductor layer 530 , an active layer 540 , a p-type semiconductor layer 550 , a transparent electrode 560 , p-type reflective electrodes 580 and 585 , and n-type reflective electrodes 570 and 572 .
  • two p-type reflective electrodes 580 and 585 and two n-type reflective electrodes 570 and 572 are formed.
  • the two p-type reflective electrodes 580 and 585 formed through division are electrically interconnected.
  • the two p-type reflective electrodes 580 and 585 can be patterned on the same plane in the form of a substantial ‘ ’ shape.
  • the two n-type reflective electrodes 570 and 572 formed through division are electrically interconnected.
  • the two n-type reflective electrodes 570 and 572 can be patterned on the same plane in the form of a substantial ‘ ’ shape.
  • the two p-type reflective electrodes 580 and 585 are formed on the transparent electrode 560 , and the two n-type reflective electrodes 570 and 572 are adjacently formed on the n-type semiconductor layer 530 .
  • the two p-type reflective electrodes 580 and 585 and the two n-type reflective electrodes 570 and 572 are formed through division, so that various light paths can be ensured and the light generated from the active layer 540 can be more efficiently emitted to the upward direction. Accordingly, the brightness of the semiconductor light emitting device comprising the divided reflective electrodes can be increased more and more.
  • the fifth embodiment shows an example in which the electrodes formed through division are reflective electrodes.
  • the electrodes formed through division may be typical electrodes, other than the reflective electrodes, which are applied to fields related to a semiconductor light emitting device.
  • the number of the reflective electrodes formed through division is two or three.
  • the number of the reflective electrodes formed through division can be varied according to the design thereof.
  • the embodiments show an example of the P-N junction semiconductor light emitting device in which the p-type semiconductor layer is formed on the n-type semi-conductor layer.
  • the embodiment can be applied to an N-P-N junction semi-conductor light emitting device in which an n-type semiconductor layer is additionally formed on the p-type semiconductor layer.
  • the N-P-N junction semiconductor light emitting device denotes a semiconductor light emitting device in which both first and second electrode layers are provided as n-type semiconductor layers, and a p-type semiconductor layer is formed between the n-type semiconductor layers.
  • a first electrode is formed on the first electrode layer, which is the n-type semiconductor layer, while making contact with the first electrode layer.
  • a second electrode is formed on the second electrode layer, which is the n-type semiconductor layer, while making contact with the second electrode layer.
  • any reference in this specification to “one embodiment”, “an embodiment”, “example embodiment”, etc. means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention.
  • the appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment.
  • the semiconductor light emitting device comprises a plurality of divided reflective electrodes as electrodes, so that the light generated from the active layer can be transmitted in the upward direction through gaps between the electrodes or reflected from the electrodes instead of being absorbed by the electrodes. Consequently, the total light emitting efficiency of the semiconductor light emitting device can be improved.

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KR1020060133528A KR100836494B1 (ko) 2006-12-26 2006-12-26 반도체 발광소자
KR10-2006-0133528 2006-12-26
PCT/KR2007/006582 WO2008078893A1 (fr) 2006-12-26 2007-12-17 Dispositif électroluminescent à semi-conducteur

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US14/704,685 Expired - Fee Related US9356197B2 (en) 2006-12-26 2015-05-05 Semiconductor light emitting device

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US (3) US20090315050A1 (fr)
EP (1) EP2074664A4 (fr)
KR (1) KR100836494B1 (fr)
CN (1) CN101523624B (fr)
DE (2) DE202007019397U1 (fr)
WO (1) WO2008078893A1 (fr)

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US20100084675A1 (en) * 2008-10-03 2010-04-08 Kazuhiko Ueno Semiconductor light emitting apparatus
JP2015103768A (ja) * 2013-11-28 2015-06-04 株式会社トクヤマ ｎ型負電極の形成方法、およびＩＩＩ族窒化物半導体発光素子
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CN101523624A (zh) 2009-09-02
CN101523624B (zh) 2011-04-20
DE202007019302U1 (de) 2011-09-22
EP2074664A4 (fr) 2012-03-07
US9356197B2 (en) 2016-05-31
DE202007019397U1 (de) 2012-04-03
US20130181239A1 (en) 2013-07-18
US9054258B2 (en) 2015-06-09
WO2008078893A1 (fr) 2008-07-03
US20150236212A1 (en) 2015-08-20
KR100836494B1 (ko) 2008-06-09
EP2074664A1 (fr) 2009-07-01

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