US2193610A - Selenium contact electrode - Google Patents

Selenium contact electrode Download PDF

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Publication number
US2193610A
US2193610A US190995A US19099538A US2193610A US 2193610 A US2193610 A US 2193610A US 190995 A US190995 A US 190995A US 19099538 A US19099538 A US 19099538A US 2193610 A US2193610 A US 2193610A
Authority
US
United States
Prior art keywords
selenium
contact electrode
electrode
rectifier
cadmium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US190995A
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English (en)
Inventor
Earl D Wilson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Priority to US190995A priority Critical patent/US2193610A/en
Priority to FR849690D priority patent/FR849690A/fr
Application granted granted Critical
Publication of US2193610A publication Critical patent/US2193610A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/048—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/043—Preliminary treatment of the selenium or tellurium, its application to foundation plates or the subsequent treatment of the combination
    • H10D48/044—Conversion of the selenium or tellurium to the conductive state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • H10D48/047—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Definitions

  • My invention relates to dry rectiflers and especially to the selenium dry rectifier.
  • An object of the invention is to provide a very efiicient selenium rectifier.
  • Another object of the invention is to provide a very intimate contact by electrodes'to the rectifying layer of selenium.
  • Another object is to provide a method of reducing the reverse current in selenium rectifiers.
  • I preferably take as an electrode a material of the iron group, and particularly a plate of cold rolled steel such as that illustrated in cross-section in the drawing.
  • One surface of this electrode is roughened to a go mat surface by any convenient process such as sand blasting or acid etching.
  • I coat the rectifying layer which may be any one or combination of the selenium or sulphur group.
  • I prefer, however, to coat the roughened surface of the plate with amorphous selenium at a temperature between 220C. and 250C. and to apply the selenium to a thickness of several mils and to cool it quickly.
  • This selenium is preferably of a commercially available quality having the highest order of electrical conductance when in the metallic form.
  • the coated steel plate is then preferably heated to approximately 130 C. and is pressed against a smooth flat surface with sufficient force to reduce the plastic selenium to a smooth uniform layer preferably about two mils thick.
  • This smooth flat surface may be conveniently provided by the use of a phenol condensation product, H especially that sold under the trade name of "MicartaJ'
  • H phenol condensation product
  • the plate is then put preferably into” an oven at room temperature and heated gradually to approximately 180 to 190 C. within a period of two hours, after which it is annealed at the acquired temperature for several hours, I' preferably at least six. In practice, this can be Conveniently done overnight.
  • the oven is then preferably gradually cooled to room temperature before the plate is removed, the time taken being preferably that of three hours.
  • a preferred cadmium alloy is that of the eutectic of cadmium and tin which is approximately '75% tin and 25% cadmium with a melting point about 165 C.
  • the percentage of cadmium may be varied from 100% or all cadmium to that of a small percentage, for example 0.1% with the tin.
  • a typical element made as specified will deliver about amperes per square inch in the forward direction at 3 volts, and about .03 ampere for the same voltage in the reverse direction.
  • the reverse current can be still further reduced by applying suificient alternating-current voltage to the element to bring the temperature momentarily to approximately 150 to 175 ⁇ C. Repeated applicatons of this treatment may reduce the reverse current by a factor of 5 or with only a relatively slight decrease in forward conductance.
  • the method of reducing the back current in a selenium rectifier which comprises applying sufl'icient alternating-current voltage thereto to bring the temperature momentarily to approximately 150 to 175 C.

Landscapes

  • Coating By Spraying Or Casting (AREA)
US190995A 1938-02-17 1938-02-17 Selenium contact electrode Expired - Lifetime US2193610A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US190995A US2193610A (en) 1938-02-17 1938-02-17 Selenium contact electrode
FR849690D FR849690A (fr) 1938-02-17 1939-01-31 Perfectionnements aux électrodes au sélénium pour redresseurs électriques

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US190995A US2193610A (en) 1938-02-17 1938-02-17 Selenium contact electrode

Publications (1)

Publication Number Publication Date
US2193610A true US2193610A (en) 1940-03-12

Family

ID=22703675

Family Applications (1)

Application Number Title Priority Date Filing Date
US190995A Expired - Lifetime US2193610A (en) 1938-02-17 1938-02-17 Selenium contact electrode

Country Status (2)

Country Link
US (1) US2193610A (fr)
FR (1) FR849690A (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2457169A (en) * 1945-03-12 1948-12-28 Standard Telephones Cables Ltd Method of manufacturing of rectifier elements
US2459848A (en) * 1945-05-12 1949-01-25 Standard Telephones Cables Ltd Rectifier element
US2488369A (en) * 1943-12-15 1949-11-15 Westinghouse Electric Corp Selenium rectifier
US2496692A (en) * 1947-03-20 1950-02-07 Westinghouse Electric Corp Selenium rectifier
US2497649A (en) * 1946-07-31 1950-02-14 Gen Electric Process of electroforming selenium rectifiers
US2510322A (en) * 1945-09-22 1950-06-06 Union Switch & Signal Co Selenium rectifier
US2585014A (en) * 1942-07-02 1952-02-12 Standard Telephones Cables Ltd High-voltage rectifier disk
US2747254A (en) * 1952-06-14 1956-05-29 Westinghouse Electric Corp Manufacture of selenium rectifiers
US2842830A (en) * 1953-10-02 1958-07-15 Int Standard Electric Corp Process for the manufacture of selenium rectifier
US2915687A (en) * 1953-12-01 1959-12-01 Itt Electroforming of semiconductive cells
US3002135A (en) * 1958-06-11 1961-09-26 Hughes Aircraft Co Semiconductor device
DE975845C (de) * 1951-12-20 1962-10-25 Standard Elek K Lorenz Ag Verfahren zur Herstellung von Selengleichrichterplatten mit mehrschichtiger Deckelektrode

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2585014A (en) * 1942-07-02 1952-02-12 Standard Telephones Cables Ltd High-voltage rectifier disk
DE884847C (de) * 1943-12-15 1953-07-30 Westinghouse Electric Corp Trockenkontakt-Gleichrichter bzw. lichtempfindliches Element
US2488369A (en) * 1943-12-15 1949-11-15 Westinghouse Electric Corp Selenium rectifier
US2457169A (en) * 1945-03-12 1948-12-28 Standard Telephones Cables Ltd Method of manufacturing of rectifier elements
US2459848A (en) * 1945-05-12 1949-01-25 Standard Telephones Cables Ltd Rectifier element
US2510322A (en) * 1945-09-22 1950-06-06 Union Switch & Signal Co Selenium rectifier
US2497649A (en) * 1946-07-31 1950-02-14 Gen Electric Process of electroforming selenium rectifiers
US2496692A (en) * 1947-03-20 1950-02-07 Westinghouse Electric Corp Selenium rectifier
DE975845C (de) * 1951-12-20 1962-10-25 Standard Elek K Lorenz Ag Verfahren zur Herstellung von Selengleichrichterplatten mit mehrschichtiger Deckelektrode
US2747254A (en) * 1952-06-14 1956-05-29 Westinghouse Electric Corp Manufacture of selenium rectifiers
US2842830A (en) * 1953-10-02 1958-07-15 Int Standard Electric Corp Process for the manufacture of selenium rectifier
US2915687A (en) * 1953-12-01 1959-12-01 Itt Electroforming of semiconductive cells
US3002135A (en) * 1958-06-11 1961-09-26 Hughes Aircraft Co Semiconductor device

Also Published As

Publication number Publication date
FR849690A (fr) 1939-11-29

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