US2726328A - Binary storage system - Google Patents

Binary storage system Download PDF

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Publication number
US2726328A
US2726328A US169140A US16914050A US2726328A US 2726328 A US2726328 A US 2726328A US 169140 A US169140 A US 169140A US 16914050 A US16914050 A US 16914050A US 2726328 A US2726328 A US 2726328A
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United States
Prior art keywords
storage
potential
cathode
voltage
binary
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Expired - Lifetime
Application number
US169140A
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English (en)
Inventor
Albert M Clogston
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AT&T Corp
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Bell Telephone Laboratories Inc
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Publication date
Application filed by Bell Telephone Laboratories Inc filed Critical Bell Telephone Laboratories Inc
Priority to US169140A priority Critical patent/US2726328A/en
Priority to FR1055818D priority patent/FR1055818A/fr
Priority to GB14219/51A priority patent/GB701010A/en
Application granted granted Critical
Publication of US2726328A publication Critical patent/US2726328A/en
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/23—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes or William tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/58—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output
    • H01J31/60—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output having means for deflecting, either selectively or sequentially, an electron ray on to separate surface elements of the screen

Definitions

  • This invention relates to cathode-ray apparatus and, more particularly, to storage devices for electrostatic storage, wherein an input signal is stored in the form of a charge distribution for a period of time and converted subsequently into an output signal which is a facsimile of the stored signal.
  • Storage devices of this type generally make use of the fact that a pattern of electrostatic charges deposited on the surface of a good insulator can be retained for an appreciable period of time.
  • a cathode-ray beam is deflected to scan elemental areas of the face of a dielectric storing surface, and the potential or charge stored upon each of the elemental areas of the bombarded face is selectively varied in accordance with input signals. Thereafter, by a subsequent scanning, the charges stored upon these areas are resolved into respective potential changes in an output circuit.
  • This storing capacity has been utilized in several ways.
  • an electron beam is directed from a source at a dielectric surface through a grid which is adjacent to the surface and is at a potential Vc
  • there exist two stable potentials which the dielectric surface will assume as the electron energy of the beam is varied.
  • the stable position is the potential of the electron source Vk.
  • the value V0 the stable position is the potential of the grid Vc.
  • zero can be represented by storage at the source potential V1; and unity by storage at the grid potential Vc.
  • an extended insulating surface to provide a plurality of elemental storage areas, a plurality of binary digits can be stored. This technique will hereinafter be referred to as binary electrostatic storage. Coding methods for converting signal information into binary pulse codes can be utilized herewith for the storage of more complex information.
  • One of the earliest developed devices for use in a system for taking advantage of this storing property of a dielectric surface comprises a source for providing an electron stream, a dielectric surface in target relationship with the source, and a mesh grid interposed between the source and the dielectric surface.
  • the grid wires act to establish a uniform second stable position over the whole surface and shield elemental areas from one another for permitting resolution of the surface into a plurality of elemental areas.
  • an extended dielectric surface can be used for the storage of many binary digits if the various elemental storage areas can be prevented from coalescing or otherwise interfering with one another.
  • certain critical conditions must be satisfied.
  • a principal feature of the present invention is a storage surface formed by depositing islands of dielectric material on a conducting member, for example, a sheet of metal. It has been found that with such a storage surface, the function served by the grid for fixing the stable potential V0 and thereby providing binary electrostatic storage in the arrangement previously described can be readily performed by the conducting sheet with the consequent elimination of the grid. In operation, therefore, the conducting sheet is maintained at some voltage V0 with respect to the electron source; The insulating islands thereafter can be charged either to cathode potential V1; or thepotential of the conducting sheet Ve.
  • the voltage Va is related to the storage element characteristic voltage V0 in such a manner that the areas negatively charged to the potential V ⁇ : tend to grow in size, these charged areas can only expand until they approach the boundary between the dielectric islands and the metal. Negatively charged portions of the storage surface, therefore, can maintain stable configurations. Positively charged elements of dielectric, being surrounded by metal of the same potential, are also stable. Therefore, such a mosaic surface is adaptable for binary electrostatic storage.
  • sheet serves the function of the interposed grid, there is no requirement for a separate grid in front of the mosaic As mentioned hereinbefore, since the metallic surface.
  • This permits structural simplification of a storage device embodying such a mosaic.
  • the output signal is derived during a scanning of the charge pattern on the storage mosaic by distinguishing between the rapidly moving electrons returned from the elemental areas charged to the negative potential Vk, which forms one of the code, and the slowly moving electrons returned from the elemental areas charged to the more positive potential Vc, which forms the second unit of the code.
  • Figs. 1 and 2 are graphs useful in explaining the principles of binary electrostatic storage
  • Fig. 3 is in part a diagram of a storage tube and in part a circuit schematic illustrating one embodiment of the invention in which the input signal is applied to the tube cathode;
  • Fig. 4 is in part a diagram of a storage tube and in part a circuit schematic illustrating an alternative embodiment of the invention wherein the input signal is applied to the tube anode;
  • Fig. 5 shows in more detail a portion of the target assembly of a tube according to the invention.
  • Fig. 1 illustrates a typical characteristic of a dielectric surface under bombardment by electrons.
  • the secondary emission ratio is less than unity, indicating that the net current is negative (i. e., the surface is assuming a negative charge resulting from the acquisition of electrons).
  • a target element bombarded by low velocity electrons tends to assume a more negative potential.
  • the electron energy is increased to a critical voltage V0, the secondary emission ratio becomes equal to unity, and the net current to the target is zero.
  • the secondary emission ratio exceeds unity, and the net current to the target is positive.
  • Vs a saturation point is reached, after which the secondary emission ratio becomes less than unity again.
  • the cathode potential V1; .and the back plate potential Vc are two stable points at which the target elements may maintain themselves under continuous bombardment by a stream of electrons. This characteristic of such a storage surface is utilized in a system for binary electrostatic storage, wherein the two stable points Va and V0 serve as the two digits.
  • the storage device 10 comprises an evacuated enclosing envelope 11 having at one end thereof an electron gun, which includes a cathode 12, a heating coil 13, the collimating electrodes 14, and the accelerating electrodes 15.
  • the electron gun produces a concentrated electron beam which is projected centrally between two sets of deflecting means 16 and 17 mounted in space quadrature.
  • a strong axial magnetic field is provided by magnetic coils (not shown) exterior to the tube to collimate the electron beam and aid in insuring a closely confined electron beam during its passage through the tube.
  • the deflecting means 16 and 17 are also preferably magnetic deflecting coils, although electrostatic means are practicable.
  • the electron beam is projected against a target mounted at the opposite end in the envelope 11, the target comprising a back plate 19 of conducting material, for example, copper, having evaporated, or deposited in other ways known in the art, on its front surface facing the gun a plurality of small insulating elemental areas 20, for example, .OOS-inch diameter islands of quartz.
  • a portion of the storage surface is shown in greater detail.
  • the elemental areas need not be regular in shape nor need the distribution be exactly uniform, since each elemental area is small in comparison with the scanning spot.
  • the collector electrode 18 Interposed between the electron gun and the target is a collector electrode 18.
  • the collector electrode 18 preferably should be positioned to minimize interference therewith from the electron beam to limit spurious noise.
  • One expedient for minimizing interference is to locate the collector electrode 18 near the electron gun at a point where the electron beam is in a well-concentrated stream under the influence of the accelerating electrode 15 and is not yet within the deflecting field of the coils 16 and 17. Then the collector electrode can conveniently be apertured to permit passage therethrough of the concentrated electron beam with a minimum of interference.
  • the collector electrode is preferably amesh grid of high transparency for reasons to be described in more detail hereinafter.
  • the magnetic deflecting coils 16 and 17 are energized, in a manner Well known in the art, by deflecting circuits (not shown) to sweep the electron beam cyclically in a predetermined scanning pattern across the target surface.
  • the switch S In reading, the switch S is on position 3 so that the S1 for successively changing the potential of the cathode in synchronism with the deflecting circuits so that after each complete scan of the storage surface, there is one advance in the position of the switch S1.
  • the three positions 1, 2, 3 control sequentially the erasing, writing, and reading intervals of a complete storage cycle.
  • the cathode In the erasing position, the cathode is negative with respect to the back plate 19 by a voltage which is fixed by the voltage supply B1.
  • the quiescent cathode potential is fixed by the voltage supply B2.
  • input signals are applied to the cathode 12 from an input source 21.
  • the input source 21 is of a type to supply the off-on binary pulse code to be stored.
  • the cathode 12 In the reading position, the cathode 12 is at a potential fixed by the voltage supply E3.
  • the collector electrode 18 also is connected to an electronic switch S2, operated in synchronism with the switch S1.
  • An output signal is derived on the third position thereof in synchronism with the reading interval of the storage cycle.
  • the collector electrode 18 is maintained at a slightly positive potential with respect to the back plate 19 by means of the voltage supply 60.
  • the voltage between the cathode and the back plate is preferably adjusted to be between the voltage V0 and 2V0; for example, the voltage E2 can be 75 volts, so that the quiescent voltage of the cathode is 75 volts with respect to the back plate during this writing interval.
  • the signal Es which is supplied by the input source 21, is made suflicient so that the sum of the voltages E5 and E2 is greater than the sum of the voltages E1 and V0. For values already designated for E1, E2, and V0, a signal voltage Es of 25 volts is suflicient for the successful operation of the device.
  • the voltage difierence between the back plate and the cathode is preferably maintained at a voltage equal to the voltage E2 of the writing interval. Therefore, the supply E is also made 75 volts.
  • each storage element is scanned by a beam whose energy is less than the charac' teristic voltage V0 assumed for each element, so that as each element is swept by the beam, it assumes the first of the two stable positions, the cathode potential Vk described in connection with Figs. 1 and 2. Therefore, in this case, at the completion of this erasing scan, each element is left charged to 45 volts with repect to the grounded back plate.
  • the cathode potential is fixed by the supply E2 so that the cathode becomes 75 volts with respect to the back plate.
  • the cathode voltage will be decreased to -100 volts so that the voltage difference between the particular storage element and the cathode is 55 volts, which is in excess of the critical voltage V0, so that the element is charged to the second stable position Vc, which is the voltage of the back plate. Therefore, after the beam has swept past the element, the stored element is left with a positive potential diflference of 75 volts with respect to the cathode.
  • the storage surface obtains a charge distribution comprising areas charged positively with respect to the cathode voltage and areas charged to the voltage of the cathode. The nature of the charge on each of these areas is determined by the potential difference between the cathode and the storage element at the time the scanning beam impinged thereon during the writing interval. Since each of the storage elements 20 has a very high resistivity, the charge pattern thereon will remain stable for some time, thus constituting storage.
  • the switch S1 is on position 3 so that the cathode is maintained at the constant voltage E3 with re spect to the back plate during the whole of scanning interval.
  • the output or reading signal is derived by collecting electrons returned from the storage surface during this reading scan.
  • This return current is composed essentially of two kinds of electrons.
  • the element bombarded first accumulates a slight negative charge. Thereafter, electrons directed at this element are repelled by the negative field thereon and reflected back towards the electron gun at velocities comparable to those with which they approach the surface. These rapidly moving electrons constitute the first and undesirable part of the return current.
  • the second kind of electrons constituting the return current comprises slowmoving electrons which are the result of secondary emission from the more positive portions of the target surface under bombardment by the electron beam. These slowmoving electrons are easily intercepted by the collector electrode and constitute the output current. Moreover, where elemental areas of the target surface are charged negatively, the resulting fields serve to suppress secondary emission from the surrounding metallic boundaries, and only fast electrons are returned from the surface. As a result, by distinguishing between the rapidly-moving electrons returned from negative areas and the slowly-moving electrons returned from positive areas, there is derived during the reading interval an output signal which is a reproduction of the stored binary signals.
  • Fig. 4 illustrates an alternative embodiment of the invention, more particularly adapted for applying the input signal to the back plate.
  • a neutralizing electrode 30 for minimizing the disturbance of the accelerating field in the region of deflection during the pulsing of the back plate 1?.
  • This electrode 30 is preferably a coarse mesh grid to minimize interference with the electron beam and is to be distinguished from the fine mesh grid utilized in devices in the prior art to serve the function served here by the back plate for securing the uniform second stable position over the whole storage surface, important for binary storage.
  • the cathode is kept at a fixed potential, while the back plate potential is changed with respect thereto for each of the three scanning intervals of a complete storage cycle.
  • the back plate 19 is connected to an electronic switch S3 for successively changing the back plate potential in synchronism with the deflecting circuits so that after each complete scan, there is one advance in the position of the switch S3.
  • the three positions sequentially control the erasing, writing, and reading intervals of a complete storage cycle in the manner already described, wherein the voltages E1, E2, and E3 cooperate to secure binary storage.
  • the input signal is supplied from the binary source 21 to the back plate by way of the electronic switch S4, operated in synchronism with the switch S3, to permit the input signal to pulse the back plate during the Writing interval.
  • the output signal is derived as before by collection of the return current during the reading interval.
  • Devices of this sort can be connected in parallel with appropriate switching for storage of continuous signals.
  • band-width increase or reduction can be effected.
  • a cathode ray device comprising an electron beam source, means for controlling the velocity of the electron beam formed by said source, a storage electrode in target relationship with said beam source including a conducting member having thereon a plurality of discrete islands of insulating material having good secondary electron-emissive properties, a collecting electrode in secondary electron emission collecting relation with the storage electrode, and means for cyclically scanning the storage electrode with the electron beam for storing and reading signals thereon, a signal source, an output circuit, means including voltage supply means providing a plurality of different D.-C. biasing voltage levels, and switching means for applying different D.-C. biasing levels on the beam velocity control means on the storing and reading scans of the storage electrode surface and connecting electrically the signal source to the velocity control means on a storing scan and the output circuit to the collecting electrode on a reading scan.
  • a cathode ray device comprising an electron beam source, means for controlling the velocity of the beam from said source, a storage electrode in target relation with said beam source including a conducting member having thereon a plurality of discrete islands of insulating material, and means for cyclically sweeping the electron beam over the storage electrode for storing and reading charge distributions on successive scans, a signal source, an output circuit, means including voltage supply means providing a plurality of different D.-C. biasing voltage levels, and switching means for applying different D.-C.
  • biasing levels on the beam velocity control means during the storing and reading scans of the storage electrode surface connecting the signal source electrically to the velocity control means on a storing scan for superimposing input signals on one biasing level whereby a binary signal pattern is stored on the storage electrode, and connecting electrically the output circuit to the cathode ray device on the reading scan.
  • a cathode ray device comprising an electron beam source, a storage electrode in target relationship with said beam source including a conducting member having thereon a plurality of discrete islands of insulating material having good secondary electron-emissive properties, means for cyclically scanning the storage electrode with the electron beam, and means for controlling the velocity of the beam impinging onthe storage electrode, a signal source, an output circuit, means including voltage supply means providing a plurality of difierent D.-C. voltage levels, and switching means for'applying difierent D.-C. biasing potentials on the beam velocity control means during the storing and reading cycles and connecting electrically the signal source and output circuit alternately to the cathode ray device during storing and reading scans.
  • a cathode ray device comprising an electron beam source, a storage electrode in target relationship with said beam source including a conducting member having thereon a plurality of discrete islands of insulating-material, means for cyclically scanning the storage electrode with the electron beam, and means for controlling the velocity of the beam impinging on the storage electrode including a control electrode and means for establishing a D.-C. bias between said control electrode and storage electrode, a signal source, an output circuit, and means including voltage supply means for providing a plurality of different D.-C. biasing levels, and switching means for applying a different 'D.-C. biasing level between the control electrode and the storage electrode and electrically connecting alternately on storing and reading scans the input source and the output circuit to the cathode ray device.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
US169140A 1950-06-20 1950-06-20 Binary storage system Expired - Lifetime US2726328A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US169140A US2726328A (en) 1950-06-20 1950-06-20 Binary storage system
FR1055818D FR1055818A (fr) 1950-06-20 1951-01-19 Perfectionnements aux dispositifs d'emmagasinage électrostatiques
GB14219/51A GB701010A (en) 1950-06-20 1951-06-15 Compositions having lubricating properties

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GB (1) GB701010A (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2817781A (en) * 1954-05-27 1957-12-24 Sheldon Edward Emanuel Image storage device
US2846615A (en) * 1953-05-26 1958-08-05 Ibm Electrostatic memory system
US2859376A (en) * 1955-05-19 1958-11-04 Bell Telephone Labor Inc Electron discharge storage device
US2908836A (en) * 1953-03-30 1959-10-13 Itt Charge storage device
US3229213A (en) * 1962-07-20 1966-01-11 James W Schwartz Bistable electron device comprising axially spaced dynodes
US3798477A (en) * 1972-08-03 1974-03-19 Tektronix Inc Storage tube with target having conductive surface exposed through random cracks in dielectric coating
US4004182A (en) * 1974-05-02 1977-01-18 English Electric Valve Company Limited Operation of storage tubes having secondary electron emissive targets
JPS52156442U (fr) * 1977-04-11 1977-11-28

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2180710A (en) * 1936-03-19 1939-11-21 Telefunken Gmbh Cathode ray tube screen
US2193101A (en) * 1936-04-04 1940-03-12 Telefunken Gmbh Electrode structure
US2210034A (en) * 1935-11-08 1940-08-06 Emi Ltd Electron multipler
US2250283A (en) * 1939-02-21 1941-07-22 Bell Telephone Labor Inc Electron discharge device
US2276359A (en) * 1938-09-10 1942-03-17 Ardenne Manfred Von Television image projection device
US2373395A (en) * 1941-05-01 1945-04-10 Bell Telephone Labor Inc Electron discharge device
US2415591A (en) * 1942-05-04 1947-02-11 Henroteau Francois Char Pierre Method and apparatus for measuring distance
US2441296A (en) * 1943-12-27 1948-05-11 Rca Corp Computer system
US2454410A (en) * 1945-06-20 1948-11-23 Rca Corp Cathode beam tube and circuit therefor
US2503949A (en) * 1948-04-23 1950-04-11 Rca Corp Storage tube
US2513743A (en) * 1947-01-15 1950-07-04 Rca Corp Electron storage device with grid control action
US2535817A (en) * 1942-09-14 1950-12-26 Nat Union Radio Corp Electrooptical dark trace storage tube
US2540635A (en) * 1948-05-27 1951-02-06 Rca Corp Cesiated monoscope
US2547638A (en) * 1948-12-18 1951-04-03 Raytheon Mfg Co Image storage tube
US2548789A (en) * 1948-12-08 1951-04-10 Raytheon Mfg Co Electronic storage device
US2549072A (en) * 1946-02-27 1951-04-17 Rca Corp Recording apparatus for radar systems
US2617963A (en) * 1949-05-26 1952-11-11 Int Standard Electric Corp Storage tube system
US2637002A (en) * 1953-04-28 Television pickup tube

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2637002A (en) * 1953-04-28 Television pickup tube
US2210034A (en) * 1935-11-08 1940-08-06 Emi Ltd Electron multipler
US2180710A (en) * 1936-03-19 1939-11-21 Telefunken Gmbh Cathode ray tube screen
US2193101A (en) * 1936-04-04 1940-03-12 Telefunken Gmbh Electrode structure
US2276359A (en) * 1938-09-10 1942-03-17 Ardenne Manfred Von Television image projection device
US2250283A (en) * 1939-02-21 1941-07-22 Bell Telephone Labor Inc Electron discharge device
US2373395A (en) * 1941-05-01 1945-04-10 Bell Telephone Labor Inc Electron discharge device
US2415591A (en) * 1942-05-04 1947-02-11 Henroteau Francois Char Pierre Method and apparatus for measuring distance
US2535817A (en) * 1942-09-14 1950-12-26 Nat Union Radio Corp Electrooptical dark trace storage tube
US2441296A (en) * 1943-12-27 1948-05-11 Rca Corp Computer system
US2454410A (en) * 1945-06-20 1948-11-23 Rca Corp Cathode beam tube and circuit therefor
US2549072A (en) * 1946-02-27 1951-04-17 Rca Corp Recording apparatus for radar systems
US2513743A (en) * 1947-01-15 1950-07-04 Rca Corp Electron storage device with grid control action
US2503949A (en) * 1948-04-23 1950-04-11 Rca Corp Storage tube
US2540635A (en) * 1948-05-27 1951-02-06 Rca Corp Cesiated monoscope
US2548789A (en) * 1948-12-08 1951-04-10 Raytheon Mfg Co Electronic storage device
US2547638A (en) * 1948-12-18 1951-04-03 Raytheon Mfg Co Image storage tube
US2617963A (en) * 1949-05-26 1952-11-11 Int Standard Electric Corp Storage tube system

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2908836A (en) * 1953-03-30 1959-10-13 Itt Charge storage device
US2846615A (en) * 1953-05-26 1958-08-05 Ibm Electrostatic memory system
US2817781A (en) * 1954-05-27 1957-12-24 Sheldon Edward Emanuel Image storage device
US2859376A (en) * 1955-05-19 1958-11-04 Bell Telephone Labor Inc Electron discharge storage device
US3229213A (en) * 1962-07-20 1966-01-11 James W Schwartz Bistable electron device comprising axially spaced dynodes
US3798477A (en) * 1972-08-03 1974-03-19 Tektronix Inc Storage tube with target having conductive surface exposed through random cracks in dielectric coating
US4004182A (en) * 1974-05-02 1977-01-18 English Electric Valve Company Limited Operation of storage tubes having secondary electron emissive targets
JPS52156442U (fr) * 1977-04-11 1977-11-28

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Publication number Publication date
FR1055818A (fr) 1954-02-22
GB701010A (en) 1953-12-16

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