US2844772A - Semi-conductive device and method for making same - Google Patents

Semi-conductive device and method for making same Download PDF

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Publication number
US2844772A
US2844772A US523403A US52340355A US2844772A US 2844772 A US2844772 A US 2844772A US 523403 A US523403 A US 523403A US 52340355 A US52340355 A US 52340355A US 2844772 A US2844772 A US 2844772A
Authority
US
United States
Prior art keywords
semi
envelope
wire
layer
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US523403A
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English (en)
Inventor
Weil Frits
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Philips Corp
North American Philips Co Inc
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US Philips Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Philips Corp filed Critical US Philips Corp
Application granted granted Critical
Publication of US2844772A publication Critical patent/US2844772A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/161—Containers comprising no base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating

Definitions

  • This invention relates to semi-conductive devices, and in particular to transistors and crystal diodes, and to methods of making the same.
  • the envelope is usually made of glass; however, it may be made of ceramic material or of ceramic material and glass. Part of the envelope may even be made of metal. It is also known that the semi-conductive materials employed, more particularly, germanium and selenium, and to a smaller extent also silicon, are sensitive to heat, so that care must be taken to prevent excessive heating of the semi-conductive body when the conductors or lead-in wires are sealed in the envelope.
  • the chief object of the invention is to provide a semiconductive device fulfilling both of the above requirements, and to furnish a method for manufacturing such devices.
  • At least one supply wire is provided over at least part of its length adjacent the envelope with a metal coating.
  • This is carried out at a temperature which does not affect the semiconductive body.
  • the coating may be applied in a very simple manner by electroplating. However, as an alternative, the coating may be applied by Schoops method, which involves spraying of molten metal in finely divided particles. As a further alternative, the coating may be constituted by a metal wire or a metal tape winding. The additional mass afforded by this external coating improves the heat-dissipating ability of the supply wire covered.
  • Figs. 1, 2 and 3 show, on an enlarged scale, several different embodiments of the invention employed in connection with transistors.
  • the transistors shown therein are provided with glass envelopes, which are constituted by a unilaterally closed glass tube 1 having a sealed-onp 2,844,772 Patented July 22, 1958 z glass lid or header 2.
  • a plurality of current supply or lead-in wires 3 which extend therethrough and are connected to an electrode system inside the envelope, this system being connected with a semiconductive body 4 in the conventional manner.
  • the supply wires 3 are comparatively thin in order that the heat applied during the sealing of the glass lid 2 does not produce more than a permissible, predetermined increase in temperature of the heat-sensitive, semi-conductive body 4.
  • the invention resides in that, after the envelope has been sealed, one or more of the wires projecting from the envelope is provided with a metal coating or layer.
  • this coating or layer of metal is applied to all wires by an electroplating op eration. It is preferably constituted by a copper layer 5.
  • the diameter of the external, coated wire 5 is greater than that of the internal, uncoated wire 3.
  • the part of the wires3 adjacent the envelope is provided with a sprayed layer of aluminum 6.
  • the ends of the wires are left uncoated, so that it is not difficult to carry out a soldering connection with these ends.
  • the supply Wire 3 leading to one electrode has wound on it a layer of copper wire 7. It is assumed that the largest quantity of heat is developed in this electrode. This wire 7 may then be soldered to the supply wire 3, so that the thermal contact is improved. The increase in temperature during the soldering operation is low compared to that occurring during the sealing-in operation.
  • a method of housing a heat-sensitive, semi-conductive device having thin, connecting wires secured thereto comprising enclosing said device within an envelope and sealing the connecting wires into said envelope by the application of heat, said thin wires preventing the heat of the sealing operation from being transferred to and damaging the semi-conductive device, and thereafter providing a portion of a connecting wire adjacent and external to the envelope with a metal layer of sufiicient mass at which the resultant wire and layer provide a significant improvement in heat dissipation of the device when energized.
  • a heat-sensitive, semi-conductive device comprising an envelope with thin, lead-in wires sealed in said envelope, the improvement comprising a metal layer provided on a lead-in wire external to the envelope but adjacent thereto, the combined wire and layer having a diameter exceeding that of the portion of the wire inside i said wire.

Landscapes

  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
US523403A 1954-07-23 1955-07-21 Semi-conductive device and method for making same Expired - Lifetime US2844772A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL189441 1954-07-23

Publications (1)

Publication Number Publication Date
US2844772A true US2844772A (en) 1958-07-22

Family

ID=19750674

Family Applications (1)

Application Number Title Priority Date Filing Date
US523403A Expired - Lifetime US2844772A (en) 1954-07-23 1955-07-21 Semi-conductive device and method for making same

Country Status (6)

Country Link
US (1) US2844772A (de)
BE (1) BE540008A (de)
CH (1) CH333707A (de)
DE (1) DE1136423B (de)
FR (1) FR1127840A (de)
GB (1) GB783923A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002132A (en) * 1956-12-24 1961-09-26 Ibm Crystal diode encapsulation
US3474307A (en) * 1965-03-29 1969-10-21 Hitachi Ltd Semiconductor device for chopper circuits having lead wires of copper metal and alloys thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3122679A (en) * 1959-10-05 1964-02-25 Hubert H Hoeltje Jr Transistor mounting pad
DE102008038811B4 (de) 2007-07-31 2023-09-21 Marquardt Gmbh Elektrischer Schalter

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1540137A (en) * 1921-08-08 1925-06-02 William F Lautenschlager Removable jacket for spark-plug electrodes
US2392661A (en) * 1944-08-10 1946-01-08 Gen Electric Base for electric lamps or similar devices
US2486482A (en) * 1945-10-18 1949-11-01 Bell Telephone Labor Inc Sealed container for electrode assemblies
US2720617A (en) * 1953-11-02 1955-10-11 Raytheon Mfg Co Transistor packages
US2745045A (en) * 1952-07-19 1956-05-08 Sylvania Electric Prod Semiconductor devices and methods of fabrication

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE367628C (de) * 1923-01-24 Siemens Schuckertwerke G M B H Starkstromeinfuehrung fuer Vakuumgefaesse

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1540137A (en) * 1921-08-08 1925-06-02 William F Lautenschlager Removable jacket for spark-plug electrodes
US2392661A (en) * 1944-08-10 1946-01-08 Gen Electric Base for electric lamps or similar devices
US2486482A (en) * 1945-10-18 1949-11-01 Bell Telephone Labor Inc Sealed container for electrode assemblies
US2745045A (en) * 1952-07-19 1956-05-08 Sylvania Electric Prod Semiconductor devices and methods of fabrication
US2720617A (en) * 1953-11-02 1955-10-11 Raytheon Mfg Co Transistor packages

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3002132A (en) * 1956-12-24 1961-09-26 Ibm Crystal diode encapsulation
US3474307A (en) * 1965-03-29 1969-10-21 Hitachi Ltd Semiconductor device for chopper circuits having lead wires of copper metal and alloys thereof

Also Published As

Publication number Publication date
CH333707A (de) 1958-10-31
FR1127840A (fr) 1956-12-26
DE1136423B (de) 1962-09-13
BE540008A (de)
GB783923A (en) 1957-10-02

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