US3131353A - Self-oscillating tunnel diode frequency converters - Google Patents

Self-oscillating tunnel diode frequency converters Download PDF

Info

Publication number
US3131353A
US3131353A US118088A US11808861A US3131353A US 3131353 A US3131353 A US 3131353A US 118088 A US118088 A US 118088A US 11808861 A US11808861 A US 11808861A US 3131353 A US3131353 A US 3131353A
Authority
US
United States
Prior art keywords
frequency
tunnel diode
local oscillator
admittance
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US118088A
Other languages
English (en)
Inventor
Kim Chang Soo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Priority to US118088A priority Critical patent/US3131353A/en
Priority to FR901226A priority patent/FR1326085A/fr
Application granted granted Critical
Publication of US3131353A publication Critical patent/US3131353A/en
Priority to OA50581A priority patent/OA00499A/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D9/00—Demodulation or transference of modulation of modulated electromagnetic waves
    • H03D9/06—Transference of modulation using distributed inductance and capacitance
    • H03D9/0608—Transference of modulation using distributed inductance and capacitance by means of diodes

Definitions

  • the present invention relates to improved frequency converter circuits suitable for general communicationstype applications but particularly adapted for microwave frequencies.
  • the circuits utilize a tunnel diode to perform three simultaneous functions: mixing, oscillation and amplification.
  • the tunnel diode is a recently developed semiconductor negative resistance device characterized by a narrow transition junction between n-type and p-type semiconductor regions on the order of one hundred angstroms in thickness, which regions are doped to a carrier concentration on the order of 10 per cubic centimeter so as to give rise to a degenerate, tunneling action.
  • a graphical representation of the device current-voltage characteristic in the useful first quadrant is the N shaped curve (a short circuit stable device). The middle portion of the curve has a negative slope which provides an operating region in which gain is available to produce oscillation or amplification in accordance with the circuit conditions. Since the conductance in this region of the current-voltage characteristic is nonlinear, it is also possible to obtain mixing.
  • tunnel diode properties suggest the possibility of frequency converters which are compact, have a small component count and only require a low power D.-C. voltage source as opposed to the relatively cumbersome power supplies required by parametric amplifiers and the independent local oscillators required by conventional mixer circuits.
  • These properties of the tunnel diode are well known and a fuller disclosure thereof is available in the article in Electrical Engineering, April 1960 (Tunnel Diode Operation and Application by I. A. Lesk and J. J. Suran).
  • a self-oscillating frequency converter is dependent upon the existence of the proper admittance characteristics of the circuit over the spectrum of real frequencies from zero to infinity. It is necessary that the circuit be adjusted to provide an oscillating or amplification condition at the three frequencies: input or RF signal frequency mm, the local oscillator frequency jo, and the output or intermediate-frequency w
  • the first requirement for either of these conditions is that the imaginary component of the admittance must be zero or at least small at the specified frequencies, that is, resonance is required.
  • a second requirement is that the real component of the total circuit admittance for small signals must be zero or negative.
  • the passive admittance presented to the negative conductance of the active device must be equal to or less than the magnitude of the negative conductance.
  • the magnitude of the admittance presented to the negative conductance of the active device must be greater than the magnitude of the negative conductance.
  • the converter circuit 2 neither oscillate nor amplify at frequencies other than those specified and the admittance characteristics must be accordingly adjusted.
  • Realization of a microwave tunnel diode converter involves substantial difiiculties. Because the tunnel diode is a two-terminal device, the diode does not provide isolation between the input and output circuits. Accordingly, there is generally substantial interaction between the various portions of the circuit such as the intermediatefrequency tank circuit and the local oscillator. Variations in the admittance of one portion of the circuit to meet one of the converter requirements at a particular frequency will change the overall frequency responsive characteristics of the circuit.
  • the tunnel diode presents further problems at microwave frequency because the parasitic impedances inherent in the device arising from the device package and the tunnel diode junction become significant. For these reasons, a practical microwave tunnel diode converter must enable proper adjustment of the circuit admittances over the frequency spectrum and must provide impedance characteristics which produce resonance with the tunnel diode parasitic impedances.
  • a self-oscillating frequency converter utilizing microwave components.
  • a section of transmission line provides a resonator at the desired local oscillator frequency by positioning a capacitive element across the transmission line section at a point which is a quarter wavelength of the local oscillator wave distant from one end so that the capacitive element provides a node at the local oscillator frequency.
  • a tunnel diode is connected across the transmission line section at the second end of the section and is positioned a distance from the capacitive element such that an inductance is provided which with the parasitic impedance of the tunnel diode device produces resonance at the local oscillator frequency.
  • bias is connected to the transmission line section at the node point provided by the capacitive element to bias the tunnel diode into the region of negative conductance. Also connected to the transmission line section across the capacitive element node is an intermediate frequency circuit branch which produces an amplified output signal.
  • FIGURE 1A is an illustrative embodiment of a selfoscillating microwave tunnel diode converter utilizing a strip line as a microwave transmission line.
  • FIGURE 1B is a schematic diagram of the equivalent circuit of FIGURE 1A and
  • FIGURE 1C is an illustration of the standing wave pattern for the local oscillator wave in the circuit of FIGURE 1A and 1B.
  • FIGURE 2A is a graph of the current-voltage characteristic of the tunnel diode 11in FIGURE 1A.
  • FIGURE 2B is a graphof conductance g as a function of voltage for the tunneljdiode 1 and illustrates representative wave- FIGURE 3 is an admittance, diagram as a function of frequency jforfithe i FIGURE circuit admittance presented to tunneldiodc FIGURE" 4A is an equivalent or of afturnieldiode frequency converter'in a microwave harmonic configuration andFIGURE 4B is anillustr'atio'ri of. standing wa pa t ns for the dioequency and local oscillator: waves in the circuit of. FIGURE 4A'. I
  • FIGURE Sis an' admittanceldiagrain as affunction of frequency for the FIGURE 4A circuit admittance presentedto the tunnel diode 51 v p FIGURE IA is a planyiew of a tunnel diode frequency converter 'in a 'microwave strip line configuration.
  • radio-frequency inputsignal is 'introduced, from coaxial cable 2 to the mixer strip ,31t1ir ugh a coupling stripfl.
  • the strips 3 and dare conductors positioned a fixed dis ta'nce from a conductive ground plane "Sand accordingly serve'as transmissionflinesdh a'Qkn' Wn manner.
  • strip 3 Thelength of the strip isseIected such tank circuit.
  • FIGURE 1B is a schematic diagram of the FIG- URE 1A mixercircuit.
  • the parasitic impedances of the tunnel diode 1 is illustrated.
  • -T the parasitic. impedances of a tunnel diode device; produced by vtheclevice package and tunnel diode junction, include a capacitance C in parallel with the negative conductance g, series resist-. ance R and series inductance L. These parasitic impedanc es are.
  • FIGURE 1C illustrates standing waves 19 and 20 for the FIGURE :IA circuit for waves at; the -;localoscillator and input frequencies;,respectively.
  • the turirielldiodei l' is positioned less than'a quarter'wavelength; distance'ifrorh the ⁇ capacitor 7 ate pointfsucht'hatthi's erson "of the so'that thie imaginary partbfithe admittance pres d to the tunnel diode r'iega'tiveconductance'is zero t a.Q a mv-'
  • '-th capacitor- 7f is at t ed; position or the local est-mater wavssttdfut s a i r fi i r a t .b afls jsi h s l l t j thereto are accordingly isolated fr o'rn'tlie" local oscillatori or the capacitor 'Tibut has heing a n 'exac quarter wave; length fror'r'ithe operand of the l wave'
  • the intermediate-fr'equency circuit branch being also connected to the node (for w 'and 'w' at capacitor 7 on the mixer strip 3 is also independentfof the microwave frequency responsive characteristics.
  • the m'icrowave convert'erof- FIGURE IA utilizes a'strip line, it is to be understood that any microwa've transmission line such as coaxial cable 'or wave;- guide can be employed.
  • the converter embodiment illustrated provides some simplificationbf structure in that some common connections are made for the bias circuit branch and the intermediate-frequency circuit branch. Further simplifications are provided by utilizing the capacitor 7 'as part of an intermediate-frequency parallel tank circuit with variableinduc'tor 12' -providing a tuning element: If isolation is desired between the bias circuit branch" and the intermediate-frequency "circuit branch, the bias voltage divider can be shunted by 'a' bypass capacitor. i
  • FIGURE 2A is a-graph of current21-in tuniiel'diode'l of FIGURE 1A as a function 'of voltage;
  • the 'tunnel diode characteristic is roughly-in the shape ofan'N for ther increases in voltage result in further reductions in current at points C and D, and finally, a minimum or valley current results which is indicated at V.
  • FIGURE 2B is a graph of dynamic conductance 22 as a function of the applied voltage for the tunnel diode of FIGURE 2A and representative waveforms.
  • the curve 22 is a plot of the slope of curve 21 with points A, P, B, C, D and V derived from the corresponding point on curve 21.
  • the D.-C. bias source determines an operating point such as C or D.
  • the voltage appearing across the tunnel diode is substantially determined by the local oscillator wave superimposed on the D.-C. bias.
  • a sinusoidal local oscillator wave 24 produces a substantially sinusoidal variation in the conductance 25 of the tunnel diode at the local oscillator frequency.
  • This conductance variation produces a frequency conversion of the radiofrequency wave to an intermediate-frequency signal.
  • the D.-C. bias is at a point such that the voltage swing of the local oscillator wave 26 produces a decrease in the tunnel diode conductance for both positive and negative swings, the variation in the conductance 27 approximates a sinusoidal variation in the conductance at twice the frequency of the local oscillator waves. This relation is significant for harmonic operation as described hereinafter.
  • FIGURE 3 is a graph of the admittance 31 presented to the tunnel diode 1 in which the real and imaginary components are plotted as a function of frequency from zero towards infinity for a tunnel diode frequency converter having two tuned circuits.
  • the admittance presented to the negative resistance of the tunnel diode has no reactive component and the real part is much larger than the magnitude of the tunnel diode negative conductance Ig I at the bias point D.
  • This admittance is contributed by the series conductance 1/ R of the tunnel diode device and the loss in the circuit.
  • the capacitance effects predominate over the inductance and a substantial negative imaginary component results.
  • the real component of the admittance is reduced until the imaginary component of the admittance becomes zero again at the intermediate frequency point w
  • the real component of the admittance increases as the imaginary component assumes substantial values and then returns through zero.
  • the admittance plot returns towards the intermediate frequency point ca for increasing frequency as the real component becomes smaller and the imaginary component passes through negative values until the local oscillator frequency point w is reached slightly below the magnitude of the tunnel diode negative conductance.
  • the admittance assumes increasing positive values for the imaginary component of admittance. If the input signal frequency o is the difference of the local oscillator frequency w and the intermediate frequency m the input radio frequency point o occurs below W An image frequency w occurs at the sum of the local oscillator and intermediate frequencies.
  • the converter will only oscillate at the desired local oscillator frequency. Furthermore, amplification will be provided at the input radio-frequency and output intermediate-frequency while oscillation and amplification are generally suppressed at other frequencies. Also, because the intermediate-frequency circuit is connected across the waveguide at a node of the local oscillator and input radio-frequency waves, the adjustment of the bias and intermediate frequency circuits is independent of the input and local oscillator frequency circuit and the necessary admittance characteristics are therefore easily obtained.
  • FIGURE 4A is a schematic diagram of a second embodiment of a microwave tunnel diode frequency converter which mixes at the second harmonic of the local oscillator wave.
  • a mixer strip line 53 conveniently of the same form as strip line 3 in FIGURE 1A, is dimensioned to provide a length equal to one half the wavelength of the local oscillator wave between capacitive elements 57 and 67 which are similar to the capacitor 7 in FIGURE 1A.
  • An input radio-frequency signal is applied to the mixer strip line 53 by means of a coupling line 54.
  • a tunnel diode is positioned between the conductors of the mixer strip line 53 at one end thereof and spaced from capacitor 57 by a distance such as to provide a reactance which together with the reactance of the tunnel diode produces resonance at the local oscillator frequency.
  • an auxiliary synchronizing oscillator 68 is connected to the mixer strip line 53.
  • the synchronizing oscillator is a lowpower oscillator having a stable frequency of oscillation and may be of the type disclosed in the copending application of Frank V. Adamthwaite and Chang S. Kim, Serial No. 76,908, filed December 19, 1960, now US. Patent No. 3,041,552 and assigned to the same assignee.
  • the synchronizing oscillator 68 can be coupled to the mixer strip 53 with the radio-frequency wave through line 54.
  • the use of an auxiliary oscillator is an optional modification of any converter incorporating the present invention and its use is only dictated by the requirements of stability and synchronization.
  • An output intermediate frequency signal is made available at an output terminal 58 connected to the mixer strip 53 at capacitor 67 which is a node for the local oscillator wave.
  • An inductor 69 is connected in parallel with capacitors 57 and 67 to provide a parallel resonant tank circuit for the intermediate frequency signal.
  • a bias resistor 61 In series with the inductor 69 is a bias resistor 61 and a source of DC. potential 60 provides a D.-C. bias for the tunnel diode 51.
  • FIGURE 4B illustrates standing wave patterns for the input radio-frequency wave 72 and local oscillator wave 71 in the FIGURE 4A circuit.
  • the local oscillator wave has nodes at the two capacitive elements 57 and 58 which are spaced a half wavelenth, M 2, apart.
  • the input radio frequency wavelenth is slightly less than half the local oscillator wavelength m
  • the distance s, between the end of mixer strip 53 at which tunnel diode device 51 and capacitive element 57 provides a resonance producing reactance at the local oscillator frequency for the tunnel diode device as in the converter of FIGURES 1A, 1B and 1C.
  • FIGURE 5 is an admittance diagram in which the real and imaginary components are plotted as a function of frequency (similar to FIGURE 4A) but for a frequency converter operating in a harmonic mode.
  • This converter has three tuned circuits, one of which is tuned to the input RF frequency. This arrangement suppresses noise at the image frequency and can be provided in either harmonic or non-harmonic converters.
  • the admittance 81 is primarily that of the tunnel diode device resistance R
  • the intermediate frequency point at w appears at the next point with a zero reactive component and with a real component of admittance which is much less than the conductance 1/R but larger than the magnitude of the tunnel diode negative conductance Ig I.
  • the admittance plot for higher frequencies traverses a complete loop passing through the abscissa at a large value for the real component and intersects the abscissa again at the local oscillator point w having a small value for the real component of admittance which is less than the magnitude of the tunnel diode negative conductance.
  • the admittance intersects the abscissa again at the input radio frequency point w
  • the admittance assumes increasingly larger positive values for the imaginary component.
  • the image frequency is indicated at w which occurs at 2w iw diode connected between the conductors of said section at one end thereof, the position of said diode termination being selected such that the distance to the nearest capacitive means presents a reactance which together with the reactance of the tunnel diode device produces resonance at the local oscillator frequency; an auxiliary oscillator coupled to said section of transmission line to provide a frequency stabilizing signal at the local oscillator frequency; bias means coupled to said transmission line section across one of said capacitance means at one of said nodes to apply a D.-C.
  • a resonant circuit tuned to the intermediate frequency coupled to said transmission line section at one of said nodes providing an output signal at the desired frequency; and input means coupled -to said transmission line section for introducing a radio frequency signal to be converted to an intermediate-frequency signal.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
US118088A 1961-06-19 1961-06-19 Self-oscillating tunnel diode frequency converters Expired - Lifetime US3131353A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US118088A US3131353A (en) 1961-06-19 1961-06-19 Self-oscillating tunnel diode frequency converters
FR901226A FR1326085A (fr) 1961-06-19 1962-06-19 Convertisseur de fréquence à diode tunnel auto-oscillante
OA50581A OA00499A (fr) 1961-06-19 1964-11-12 Convertisseur de fréquence à diode tunnel auto-oscillante.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US118088A US3131353A (en) 1961-06-19 1961-06-19 Self-oscillating tunnel diode frequency converters

Publications (1)

Publication Number Publication Date
US3131353A true US3131353A (en) 1964-04-28

Family

ID=22376446

Family Applications (1)

Application Number Title Priority Date Filing Date
US118088A Expired - Lifetime US3131353A (en) 1961-06-19 1961-06-19 Self-oscillating tunnel diode frequency converters

Country Status (2)

Country Link
US (1) US3131353A (fr)
OA (1) OA00499A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3350649A (en) * 1964-01-29 1967-10-31 Gustav H Blaeser Frequency converter utilizing a tunnel diode and a microstrip line

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2978576A (en) * 1960-03-01 1961-04-04 Gen Electric Radio-frequency amplifier and converter circuits

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2978576A (en) * 1960-03-01 1961-04-04 Gen Electric Radio-frequency amplifier and converter circuits

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3350649A (en) * 1964-01-29 1967-10-31 Gustav H Blaeser Frequency converter utilizing a tunnel diode and a microstrip line

Also Published As

Publication number Publication date
OA00499A (fr) 1966-07-15

Similar Documents

Publication Publication Date Title
CN101667829B (zh) 电压控制振荡器、单片微波集成电路及高频无线装置
US3419813A (en) Wide-band transistor power amplifier using a short impedance matching section
US4079415A (en) Frequency translator
US3617898A (en) Orthogonal passive frequency converter with control port and signal port
US3085205A (en) Semiconductor harmonic generators
US4605909A (en) Dual gate FET oscillator mixer
US2816220A (en) Frequency converter
US4176332A (en) Frequency multiplier
Prigent et al. Phase noise reduction in FET oscillators by low-frequency loading and feedback circuitry optimization
US4670722A (en) FET oscillator having controllable reactance element-controlled two port feedback network
US3921056A (en) Frequency multiplier circuit
US2211003A (en) Radio signaling system
US3832653A (en) Low noise rf signal generator
US3577099A (en) Microwave oscillator having directional coupler in feedback path
US3878481A (en) Low noise VHF oscillator with circuit matching transistors
US3131353A (en) Self-oscillating tunnel diode frequency converters
US3883809A (en) Superregenerative mixers and amplifiers
US3932815A (en) Broadband waveguide mixer
JP3929254B2 (ja) 高周波回路及びそれを用いた通信装置
US3125725A (en) chang
Kursu et al. A 14.6 GHz–19.2 GHz digitally controlled injection locked frequency doubler in 45 nm SOI CMOS
GB632658A (en) Improvements in or relating to mixing circuit arrangements
US2476803A (en) High stability receiver circuit
US3253227A (en) Electronically tunable idler circuit for varying signal parametric amplifier
US4270099A (en) Circuit arrangement for generating and stably amplifying broadband rf signals