US3147085A - Apparatus for growing whiskers - Google Patents
Apparatus for growing whiskers Download PDFInfo
- Publication number
- US3147085A US3147085A US138101A US13810161A US3147085A US 3147085 A US3147085 A US 3147085A US 138101 A US138101 A US 138101A US 13810161 A US13810161 A US 13810161A US 3147085 A US3147085 A US 3147085A
- Authority
- US
- United States
- Prior art keywords
- whiskers
- whisker
- growth
- growth chamber
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 20
- 230000008016 vaporization Effects 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 238000004320 controlled atmosphere Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 238000009834 vaporization Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/62—Whiskers or needles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S264/00—Plastic and nonmetallic article shaping or treating: processes
- Y10S264/19—Inorganic fiber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
Definitions
- FIG. 1 is a somewhat schematic section through an apparatus constructed in accordance with the present invention
- FIG. 2 is a view, part in section and part in full, taken along the lines 2-2 of FIG. 1;
- FIG. 3 is an enlarged fragment of the whisker growth substrate member showing the manner in which whisker growth occurs.
- the apparatus of the present invention utilizes enclosure means which define a closed whisker growth chamber which has suitable openings for control of the atmosphere present in the chamber.
- enclosure means which define a closed whisker growth chamber which has suitable openings for control of the atmosphere present in the chamber.
- heating means capable of vaporizing the material to be used for whisker growth.
- at least one growth substrate body which is suitably mounted for continuous movement through the hot, vaporizing zone created by the heating apparatus.
- the final elements of the apparatus are a source of whisker material and a carrier member which functions to transport the material into the heating apparatus for vaporization and subsequent deposition upon the growth substrate means.
- FIG. 1 of the drawings wherein the numeral indicates an enclosure means having an inlet opening 11 and an outlet opening 12.
- the enclosed chamber defined by member 10 can be referred to as the whisker growth chamber 15 since the vaporization and growth of whiskers occurs entirely within this chamber.
- heating means here shown as an induction furnace 16, which is secured to the side walls of enclosure 10 in the manner illustrated in FIG. 2 of the drawings.
- This furnace has a generally rectangular-shaped opening 17 and can be connected to a source of power by means of the electrical wires 18.
- Furnace 16 defines a heated zone 20 in which vaporization of source material is effected.
- Source material 25 that is, the material to be grown into whiskers, is transmitted to the heated zone 20 from a suitable source such as the electrically heated crucible 26 by means of a carrier member 27 which is mounted within the growth chamber for movement from the crucible 26 through the heated zone 20.
- Carrier member 27 is shown in the drawings as being a generally cylindricallyshaped member open at both ends and held for rotation by a pair of idler rolls 28.
- the carrier is driven by a drive sprocket 29 which engages suitably formed apertures 30 in the body of carrier 27.
- the carrier 27 will similarly rotate in a clockwise direction so that it contacts the material 25 contained in crucible 26 prior to the time it enters the heated zone 20 of furnace 16.
- a pair of growth substrate means 31 and 32 have been provided. These elements are also of generally cylindrical shape and extend through the rectangular aperture 17 and heated zone 20 of furnace 16 in the manner indicated. Both are supported by idler rolls 33 and are driven by drive sprockets 34 similar to drive sprocket 29 used in connection with carrier member 27. These sprockets 34 engage suitable apertures 37 formed in the growth substrate cylinders 31 and 32.
- scraper means which are shown in the drawings as blades 46.
- blades 46 There are two such blades for each of the growth substrate bodies, since the whiskers grow from both of the surfaces thereof.
- the manner in which whisker growth occurs can best be seen in FIG. 3 of the drawings where whiskers 41 are shown growing from the opposed surfaces of one of the cylindrical substrate bodies. Collecting trays 45 have been provided heneath each of the scraper blades 40 to collect the whiskers as they are removed from the surfaces of the growth substrate cylinders.
- alumina whiskers can be produced by placing a quantity of aluminum metal in the crucible 26 where it is maintained in molten condition. The heated zone 20 of furnace 16 would then be placed at a temperature of from about 1300 C. to 1600 C., a temperature of 1500 C. being highly desirable, and the growth chamber 15 continuously supplied with hydrogen having a dew point on the order of 50 F. Since the aluminum requires oxygen to form alumina whiskers, the dew point of the atmosphere is maintained at a level insuring some water vapor.
- the flow rate of the hydrogen would normally be on the order of 3 c.f.h., although this rate is not particularly critical.
- Whiskers of other compositions can be grown in the same manner merely by controlling the temperatures and atmospheres.
- Metal whiskers for instance, can be produced by using a dry atmosphere or a vacuum so that oxidation of the metal does not occur during vaporization and growth.
- An apparatus for continuously producing metal or metal oxide whiskers comprising, enclosure means defining a whisker growth chamber and including openings providing for the passage of a selected controlled atmosphere into said growth chamber, heating means positioned within said whisker growth chamber defining a vaporizing zone in which the selected whisker material is vaporized, means including a'carrier member mounted within said growth chamber for movement through the vaporizing zone to introduce a supply of whisker material thereinto, growth substrate means mounted within said chamber for continuous movement through the vaporizing zone to provide a base from which crystals may grow, and scraper means mounted in operative relationship with respect to the surfaces of said growth substrate means to effect removal of whiskers therefrom.
- An apparatus for continuously producing metal or metal oxide whiskers comprising, enclosure means defining a whisker growth chamber and including openings providing for the passage of a selected controlled atmosphere into said growth chamber, heating means positioned within said whisker growth chamber defining a vaporizing zone in which the selected whisker material is vaporized, means including a carrier member mounted within said growth chamber for movement through the vaporizing zone to introduce a supply of whisker material thereinto, generally cylindrical growth substrate means mounted Within said chamber for continuous movement through the vaporizing zone to provide a base from which crystals may grow, and scraper means mounted in operative relationship with respect to the surfaces of said generally cylindrical growth substrate means to eifect removal of whiskers therefrom.
- An apparatus for continuously producing metal or metal oxide whiskers comprising, enclosure means defining a whisker growth chamber and including openings providing for the passage of a selected controlled atmosphere into said growth chamber, electrical resistance heating means positioned within said whisker growth chamber and defining a vaporizing zone in which whisker material is vaporized, means including a continuous carrier mounted to carry a supply of whisker material from a source thereof through the heated vaporizing zone, growth substrate means mounted within said chamber for continuous movement through the vaporizing zone to provide a base from which whiskers may grow, and scraper means mounted in operative relationship with respect to the surfaces of said growth substrate means to effect removal of whiskers therefrom.
- An apparatus for continuously producing metal or metal oxide whiskers comprising, enclosure means defining a whisker growth chamber and including openings providing for the passage of a selected controlled atmosphere into said growth chamber, heating means secured to said enclosure means within said whisker growth chamber defining a vaporizing zone in which Whisker material is vaporized, a source of whisker material contained within said growth chamber, a generally cylindrical carrier rotatably mounted in contact with the supply of whisker material, generally cylindrical growth substrate means rotatably mounted within said chamber for continuous movement through the vaporizing zone to provide a base from which whiskers may grow, and scraper means mounted in operative relationship with respect to the surfaces of said cylindrical substrates to effect removal of whiskers therefrom.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US138101A US3147085A (en) | 1961-09-14 | 1961-09-14 | Apparatus for growing whiskers |
| GB29410/62A GB970635A (en) | 1961-09-14 | 1962-07-31 | Apparatus for growing whiskers |
| CH1076062A CH403717A (de) | 1961-09-14 | 1962-09-11 | Einrichtung zum kontinuierlichen Züchten von Einkristallen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US138101A US3147085A (en) | 1961-09-14 | 1961-09-14 | Apparatus for growing whiskers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3147085A true US3147085A (en) | 1964-09-01 |
Family
ID=22480430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US138101A Expired - Lifetime US3147085A (en) | 1961-09-14 | 1961-09-14 | Apparatus for growing whiskers |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3147085A (de) |
| CH (1) | CH403717A (de) |
| GB (1) | GB970635A (de) |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3240560A (en) * | 1962-10-25 | 1966-03-15 | Corning Glass Works | Method of making gamma-alumina fibers |
| US3314759A (en) * | 1963-09-21 | 1967-04-18 | Agency Ind Science Techn | Magnesia fiber product and a method for manufacturing the same |
| US3326636A (en) * | 1965-02-15 | 1967-06-20 | United States Steel Corp | Method of making magnesium oxide fibers |
| US3341285A (en) * | 1964-07-16 | 1967-09-12 | Horizons Inc | Process for preparing alumina wool |
| US3371993A (en) * | 1964-12-21 | 1968-03-05 | Corning Glass Works | Method of making magnesium oxide fibers |
| US3421851A (en) * | 1964-06-10 | 1969-01-14 | Gen Technologies Corp | Method of growing alpha-alumina single crystal ribbons |
| US3476641A (en) * | 1965-06-01 | 1969-11-04 | Gen Technologies Corp | High-strength single crystal whisker paper composites and laminates |
| US3647524A (en) * | 1969-07-18 | 1972-03-07 | Dow Chemical Co | Vapor phase metal plating process |
| US3658469A (en) * | 1969-10-16 | 1972-04-25 | Robert H Kelsey | Continuous production of alumina whiskers |
| US3678888A (en) * | 1969-02-28 | 1972-07-25 | British Iron Steel Research | Material depositing apparatus |
| US3775061A (en) * | 1965-08-19 | 1973-11-27 | J Glass | Apparatus for making fibers |
| US3808087A (en) * | 1967-09-26 | 1974-04-30 | Gen Technologies Corp | Surface-treated lamination structures |
| US3870577A (en) * | 1970-10-09 | 1975-03-11 | Us Navy | Process for making whisker-like crystals of ammonium perchlorate |
| US3969545A (en) * | 1973-03-01 | 1976-07-13 | Texas Instruments Incorporated | Light polarizing material method and apparatus |
| US4443412A (en) * | 1981-04-24 | 1984-04-17 | Santrade, Ltd. | Crystallizing apparatus |
| US6079276A (en) * | 1995-02-28 | 2000-06-27 | Rosemount Inc. | Sintered pressure sensor for a pressure transmitter |
| US6484585B1 (en) | 1995-02-28 | 2002-11-26 | Rosemount Inc. | Pressure sensor for a pressure transmitter |
| US6505516B1 (en) | 2000-01-06 | 2003-01-14 | Rosemount Inc. | Capacitive pressure sensing with moving dielectric |
| US6508129B1 (en) | 2000-01-06 | 2003-01-21 | Rosemount Inc. | Pressure sensor capsule with improved isolation |
| US6516671B2 (en) | 2000-01-06 | 2003-02-11 | Rosemount Inc. | Grain growth of electrical interconnection for microelectromechanical systems (MEMS) |
| US6520020B1 (en) | 2000-01-06 | 2003-02-18 | Rosemount Inc. | Method and apparatus for a direct bonded isolated pressure sensor |
| US6561038B2 (en) | 2000-01-06 | 2003-05-13 | Rosemount Inc. | Sensor with fluid isolation barrier |
| US6848316B2 (en) | 2002-05-08 | 2005-02-01 | Rosemount Inc. | Pressure sensor assembly |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2538540A (en) * | 1944-06-22 | 1951-01-16 | Kraft Foods Co | Distillation apparatus |
| US2608472A (en) * | 1948-01-29 | 1952-08-26 | Stokes Machine Co | Sublimation apparatus |
| US2683676A (en) * | 1950-01-13 | 1954-07-13 | Bell Telephone Labor Inc | Production of germanium rods having longitudinal crystal boundaries |
| US2836524A (en) * | 1955-12-21 | 1958-05-27 | Gen Electric | Method and apparatus for the production of single crystals |
| US2904412A (en) * | 1953-12-28 | 1959-09-15 | Phillips Petroleum Co | Crystal separation and purification |
-
1961
- 1961-09-14 US US138101A patent/US3147085A/en not_active Expired - Lifetime
-
1962
- 1962-07-31 GB GB29410/62A patent/GB970635A/en not_active Expired
- 1962-09-11 CH CH1076062A patent/CH403717A/de unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2538540A (en) * | 1944-06-22 | 1951-01-16 | Kraft Foods Co | Distillation apparatus |
| US2608472A (en) * | 1948-01-29 | 1952-08-26 | Stokes Machine Co | Sublimation apparatus |
| US2683676A (en) * | 1950-01-13 | 1954-07-13 | Bell Telephone Labor Inc | Production of germanium rods having longitudinal crystal boundaries |
| US2904412A (en) * | 1953-12-28 | 1959-09-15 | Phillips Petroleum Co | Crystal separation and purification |
| US2836524A (en) * | 1955-12-21 | 1958-05-27 | Gen Electric | Method and apparatus for the production of single crystals |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3240560A (en) * | 1962-10-25 | 1966-03-15 | Corning Glass Works | Method of making gamma-alumina fibers |
| US3314759A (en) * | 1963-09-21 | 1967-04-18 | Agency Ind Science Techn | Magnesia fiber product and a method for manufacturing the same |
| US3421851A (en) * | 1964-06-10 | 1969-01-14 | Gen Technologies Corp | Method of growing alpha-alumina single crystal ribbons |
| US3341285A (en) * | 1964-07-16 | 1967-09-12 | Horizons Inc | Process for preparing alumina wool |
| US3371993A (en) * | 1964-12-21 | 1968-03-05 | Corning Glass Works | Method of making magnesium oxide fibers |
| US3326636A (en) * | 1965-02-15 | 1967-06-20 | United States Steel Corp | Method of making magnesium oxide fibers |
| US3476641A (en) * | 1965-06-01 | 1969-11-04 | Gen Technologies Corp | High-strength single crystal whisker paper composites and laminates |
| US3775061A (en) * | 1965-08-19 | 1973-11-27 | J Glass | Apparatus for making fibers |
| US3808087A (en) * | 1967-09-26 | 1974-04-30 | Gen Technologies Corp | Surface-treated lamination structures |
| US3678888A (en) * | 1969-02-28 | 1972-07-25 | British Iron Steel Research | Material depositing apparatus |
| US3647524A (en) * | 1969-07-18 | 1972-03-07 | Dow Chemical Co | Vapor phase metal plating process |
| US3658469A (en) * | 1969-10-16 | 1972-04-25 | Robert H Kelsey | Continuous production of alumina whiskers |
| US3870577A (en) * | 1970-10-09 | 1975-03-11 | Us Navy | Process for making whisker-like crystals of ammonium perchlorate |
| US3969545A (en) * | 1973-03-01 | 1976-07-13 | Texas Instruments Incorporated | Light polarizing material method and apparatus |
| US4443412A (en) * | 1981-04-24 | 1984-04-17 | Santrade, Ltd. | Crystallizing apparatus |
| US6079276A (en) * | 1995-02-28 | 2000-06-27 | Rosemount Inc. | Sintered pressure sensor for a pressure transmitter |
| US6082199A (en) * | 1995-02-28 | 2000-07-04 | Rosemount Inc. | Pressure sensor cavity etched with hot POCL3 gas |
| US6089097A (en) * | 1995-02-28 | 2000-07-18 | Rosemount Inc. | Elongated pressure sensor for a pressure transmitter |
| US6484585B1 (en) | 1995-02-28 | 2002-11-26 | Rosemount Inc. | Pressure sensor for a pressure transmitter |
| US6505516B1 (en) | 2000-01-06 | 2003-01-14 | Rosemount Inc. | Capacitive pressure sensing with moving dielectric |
| US6508129B1 (en) | 2000-01-06 | 2003-01-21 | Rosemount Inc. | Pressure sensor capsule with improved isolation |
| US6516671B2 (en) | 2000-01-06 | 2003-02-11 | Rosemount Inc. | Grain growth of electrical interconnection for microelectromechanical systems (MEMS) |
| US6520020B1 (en) | 2000-01-06 | 2003-02-18 | Rosemount Inc. | Method and apparatus for a direct bonded isolated pressure sensor |
| US6561038B2 (en) | 2000-01-06 | 2003-05-13 | Rosemount Inc. | Sensor with fluid isolation barrier |
| US6848316B2 (en) | 2002-05-08 | 2005-02-01 | Rosemount Inc. | Pressure sensor assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| GB970635A (en) | 1964-09-23 |
| CH403717A (de) | 1965-12-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3147085A (en) | Apparatus for growing whiskers | |
| KR890004447A (ko) | 초전도 재료 및 초전도박막의 제조방법 | |
| US4969416A (en) | Gas treatment apparatus and method | |
| US1450464A (en) | Crystal formation | |
| US3138434A (en) | Deposition method of forming a pyrolytic graphite article | |
| RU2097452C1 (ru) | Способ эпитаксиального выращивания монокристаллов нитридов металлов 3а группы химических элементов | |
| US2813811A (en) | High strength crystals | |
| GB1159995A (en) | Method and Apparatus for Epitaxial Deposition | |
| US4180697A (en) | Vacuum oven with graphite heating | |
| US3451845A (en) | Method for producing thin films of rare earth chalcogenides | |
| Gombia et al. | Vapor growth, thermodynamical study and characterization of CuInTe2 and CuGaTe2 single crystals | |
| US997881A (en) | Apparatus for the treatment of refractory materials. | |
| US1773779A (en) | Method of reducing zinc ore and the product obtained thereby | |
| DE1251283B (de) | Vorrichtung zum gleichzeitigen Herstellen einer Vielzahl von einkristallinen Halbleiterkörpern | |
| GB1222887A (en) | Micro-heating element | |
| US3334965A (en) | Process for producing alumina whiskers | |
| GB1482016A (en) | Epitaxial deposition of semiconductor material | |
| JPS6447850A (en) | Manufacture of thermoelement | |
| AT261014B (de) | Verfahren und Vorrichtung zur Herstellung von großflächigen Metall- oder Halbleiter-Epitaxieschichten | |
| US3144358A (en) | Process for production of long metallic whiskers using a polycrystalline copper substrate | |
| JPH10154661A (ja) | 薄膜形成装置及びカルコパイライト型薄膜の作製方法 | |
| JPH012219A (ja) | セラミックス超電導線材の製造方法 | |
| Shaboyan | The Effect of Growth Bands on Defect Formation in Dislocation-Free Silicon as a Result of High Temperature Industrial Operations | |
| JPS642220A (en) | Manufacture of ceramic superconductive wire material | |
| JPH0383893A (ja) | 気相成長装置 |