US3198422A - Vacuum sputtering pump - Google Patents

Vacuum sputtering pump Download PDF

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Publication number
US3198422A
US3198422A US285354A US28535463A US3198422A US 3198422 A US3198422 A US 3198422A US 285354 A US285354 A US 285354A US 28535463 A US28535463 A US 28535463A US 3198422 A US3198422 A US 3198422A
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Prior art keywords
pump
anode
cathodes
sputtering
getter
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Expired - Lifetime
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US285354A
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English (en)
Inventor
Kienel Gerhard
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WC Heraus GmbH and Co KG
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WC Heraus GmbH and Co KG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J41/00—Discharge tubes for measuring pressure of introduced gas or for detecting presence of gas; Discharge tubes for evacuation by diffusion of ions
    • H01J41/12—Discharge tubes for evacuating by diffusion of ions, e.g. ion pumps, getter ion pumps
    • H01J41/18—Discharge tubes for evacuating by diffusion of ions, e.g. ion pumps, getter ion pumps with ionisation by means of cold cathodes
    • H01J41/20—Discharge tubes for evacuating by diffusion of ions, e.g. ion pumps, getter ion pumps with ionisation by means of cold cathodes using gettering substances

Definitions

  • Sheets-Sheet 2 occurs in this method.
  • vacuum pumps For the purpose of producingand maintaininga vacuum, vacuum pumps have lately beenemployed in which the gases to be eliminated are either chemically or mechamcally bound instead of being conveyed by the (Main), Germany, or to 'Ihe present inventionrelates to a vacuum sputtering While is getter ion pum'p' was ti e th n of the gctter metal it is:possiblc of; evaporation to bury the rare ten'ng" pump since the'rate of sputtering insuch a pump outer shape or y-Pr v tme y-th a which are-absolutely 'necessary,ie., the anode and the cathode, butafitrther' third p trode is. connected-Ito a'ucha voltage thatio'nsiimpinge p thereon. with a low energy' and th'ercforelonly a pump to the mu mie in the conventional manner.
  • agctter materiaL For prouse ducing the getter layer, two methods are especially known; namely, by vacuum'evaporation or by cathode sputtering by means of ages discharge, that-is, by an ion bombardment.
  • the present invention relates to the last-mentioned method of cathode sputtering and more particularly to the of the so-called memory effect" which Such sputtering pumps are at present very frequently employed, especially because they have two 'very important advantages over the pups which operate. by means of evaporation:
  • the spot tering of the titanium adjusts itself automatically tothe amount of gas which is to be pumped ofiwithout requir-g ing any special electronic or mechanical means.
  • the rare gas ions . are taken up to the largest extent by the cathode.
  • the cathode is subjected-to a constant bombardment of ions, not only titanium is sputteredvbut the gases which have already been taken up by'the cathode are again freed. Therefore, at regular intervals ofa few undesirable pressure increases occur which are due-to'the fact that these gases are again liberated from the cathode. This is called the memory eiiect'lwhichpmeans that the pump "remembers" what it has once before pumped off.
  • This memory efie'ct is of vcry minor importance to'the- -willbecomemore suiiicicntly retained-sinoe the rate of? of the titanium of the auxiliary eleetrodeis toolowandicannot be increased, arbitrarily.
  • YAlthoughF the memory eifectfof this pump is reduced,- itstill the best possible vcauum whichmay as V I constancy thereof.
  • It isan object of le'astone electrode of a are, for example, silver and'coppcr. With an elecrare gas atoms tinally' so that the layer-will; 'no longer 'ahow amemory eflEect; v
  • FIGURES 1 to 3 diagrammatically pumps with two groups'of electrodes; p,
  • FIGURE 4 shows a sputte ump-with three groups 'j 'if eleetrodeszs hile
  • FIGURE 5 shows a circuitadiag'rani tor operating vfr p ot the type as illustrated in FIGURE 2; a
  • the sputtering pump asillustiated in FIGURE 1 is contained a housingl which. is connected-by. a-
  • the electrodes 4, 5,'aud 6 are mounted. I
  • the electric lines. '1, 3, and 9 leading toztheseelectrodes are passed through .the wall of housing I by means-of vacuumtight, leadins 1 0, 11, and- 12, reaper tively.
  • the conventional three-electrode pump consists 15 and 16.
  • the central electrode 5 which is mounted opposite to iliary cathodes 25A, 258 also of a honeycomb structure the sputtering electrodes 4 and 6 is provided with a posiwhich consist of a getter material, for example, titanium, tive potential and therefore serves as the anode, while 5 and are mounted symmetrically to the anode 5, and a the two other electrodes 4 and 6 have a negative potenpair of mthodes 24A, 258 which are likewise mounted tial and therefore form the cathodes.
  • a posi consist of a getter material, for example, titanium, tive potential and therefore serves as the anode
  • One of the cathsymmetrically to the anode and are supplied with a higher odes, for example, the left cathode 4, consists of the electric potential than the auxiliary cathodes 25A, 25B.
  • getter metal or is at least provided with a thick Cathodes 24A, 248 may also form the housing of the vention of a material, for example, silver, which is more side of the pump houa'ng, a pair of magnet pole pieces Insily sputtered than the getter material titanium.
  • the and 16 are also provided similarly as shown in FIG- cathode 6 may, however, also consist of a different ma- URES l to 3. According to the invention, this three terial and only be provided with a thick coating of silver.
  • electrode pump is further provided with an additional The operation of the sputtering pump according to pair of electrodes 26A, 2613 which are likewise of a honey- FIGURE 1 isasfollows: comb structure and are molmted symmetricaly to the Due to the potential distribution and the magnetic field anode 5.
  • gas discharges occur, each of which as shown in FIGURE 4.
  • these additional electrodes 26A, pames through one of the open cells of the honeycomb 26B are inserted between the anode 5 and the electrode 5.
  • the getter electrode 4 is cathodes A, 248.
  • Electrodes 26A, 26B consist given a higher negative potential than the electrode 6 of a material, for example, silver or copper which is which Consists of the easily sputtered material. As the more easily sputtered than the getter material of the auxresult of this, the ions impinge upon the getter electrode iliary electrodes 25A, 25B.
  • the getter el rode 4 nd he Othcr ter layers thereon In order to eliminate the mentioned electrodeiareeachdividedintoatleasttwopartswhi h memory elfect which also occtns in this three-electrode Ir is, however, more ad antageous not to apply nega i e the electrodes 26A, 26B are sputtered.
  • the getter layer potentials of different values simul aneously to both pairs for example, of titanium which is already existing and is 0f elccimdcs 4 and i but to pp y a mgalivc Potential formed continuously is then at least interspersed with, oulycithertothepairofelectrodes4A4Bortothepair andatleastpartlycovered,bytheadditiouallysputtercd 6A, B. 'I'heetfcctatminedisthesameasiustdescribcd metal of the elcctl'odes26A, 268.
  • FIGURE 3 illustrates a pump system with two normal pump. m r of es, in the p r of cathodes 20A.
  • FIGURE 5 finally illustrates diacally the man- ZOB of getter material is mounted at the opposite sides 0 'ner of imtallation of an apparatus in which ahigh vacuum 'of the honeycombal anode 5.
  • FIGURE 4 shows the ele trode system of a vacuum the container 30 for example, to a vaurum of 10'' mm. putteringpumpofthetypewhichisknownasathree- Hg. 'lhereaftenvalveuisclmdandthevacumnisim electrode pump, in which the present invention is apcreased by meansofthesputtering pump, for example, to
  • a very sensitive vacuum gauge 38 an ionization vacuum gauge, is connected to the vacuum line 35.
  • the anode is connected by the line 8 to the positive terminal of a high-tension generator 39 which supplies, for example, 5 kv.
  • the negative terminal of the generator 39 is connected by the line 40 to a switch 41 which disconnects the pump when turned to the position 42.
  • the position 43 of switch 41 is used for the normal opera tion in which a negative potential is supplied by the line 7 to the pair of getter electrodes 4A, 4B of titanium so that these electrodes are sputtered as cathodes.
  • the getter electrodes 4A, 4B are dead.
  • the negative potential is then, however, supplied by the line 9 to the pair of electrodes 6A, 6B which consists of a metal, preferably silver, which is much more easily sputtered. This electrode material is then strongly sputtered and thereby buries the rare gas atoms which are contained in the getter layers of the electrodes 4A, 4B.
  • the selector switch 41 is actuated by the electric or magnetic drive mechanism 50 which, in turn, is controlled by a control unit 51.
  • This control unit may be operated by hand by the handle 52, while in other cases, for example, when the handle 52 is in the position A, the control unit receives its control impulses from the vacuum gauge 38 and maintains the vacuum automatically.
  • the control unit 51 is for this purpose set to carry out a certain program:
  • switch 41 At a very high vacuum of, for example, mm. Hg, switch 41 is turned to the position 42.
  • the vacuum decreases beyond the required operating pres sure of, for example, 10- mm. Hg, by minor amounts of, for example, 3x10- mm. Hg, the pump is started when the switch is changed to the position 43, and it is again switched oil when the pressure drops below the required operating pressure. If this is not attained when the pump has been normally operated for a greater length of time or if the pressure increases rather frequently and especially up to slightly higher pressures due to the mem ory etfect, the control unit moves the switch, for example, forSto lominutestothepositionflandthenreturnsit again to the position 43 for the normal pump operation.
  • the sputtering pump according to the invention is developed from the Penning-type pressure gauge. It may therefore also be employed for vacuum measuring, in which event the mrrent flowing through the pump is used for indicau'ng the existing vacuum. This very advantageous property of the conventional sputtering pump is therefore retained despite the various changes which are made therein in accordanm with the invention.
  • Asputteringpumpofthecharacterdescribedcom- 6 prising a housing, an anode of cellular honeycomb structure mounted within said housing, a normal cathode means of getter material and an auxiliary cathode means of more easily sputtered getter material symmetrically disposed on opposite sides of said anode, a pair of pole pieces by which a magnetic field is produced, means by which a positive electric potential is supplied to said anode and a negative electric potential is supplied to said normal and auxiliary cathodes, said normal cathode being supplied with a higher negative potential than said auxiliary cathode.
  • a sputtering pump of the character descnbed comprising a housing, an anode of cellular honeycomb structure mounted in said housing, a pair of normal cathodes of getter material which are symmetrically disposed on opposite sides of said anode, a pair of auxiliary cathodes of more easily sputtered getter material which are symmetricallydisposedonoppositesidesofsaidanode,apair of pole pieces by which a magnetic field is produced, means by which a positive electric potential is supplied to said anode and a negative electric potential to at least one pair of said cathodes.
  • a sputtering pump as defined by claim 3 in which said negative potential is supplied to said pair of auxiliary cathodes, and a higher negative potential is supplied to said pair of normal cathodes.
  • a sputtering pump as defined by claim 4 in which one of said pair of auxiliary cathodes is interposed between said anode and each of said normal cathodes.
  • a sputtering pump as defined by claim 3 in which a pair of electrodes of cellular honeycomb structure to which a negative electric potential is supplied are symmetrically disposed on opposite sides of said anode.

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  • Electron Tubes For Measurement (AREA)
  • Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
US285354A 1962-06-08 1963-06-04 Vacuum sputtering pump Expired - Lifetime US3198422A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEH46008A DE1201945B (de) 1962-06-08 1962-06-08 Zerstaeubungs-Vakuumpumpe

Publications (1)

Publication Number Publication Date
US3198422A true US3198422A (en) 1965-08-03

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US285354A Expired - Lifetime US3198422A (en) 1962-06-08 1963-06-04 Vacuum sputtering pump

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US (1) US3198422A (de)
CH (1) CH412181A (de)
DE (1) DE1201945B (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3398879A (en) * 1966-10-07 1968-08-27 Perkin Elmer Corp Asymmetric ion pump and method
US3489336A (en) * 1967-08-25 1970-01-13 Max Josef Schonhuber Getter-ion pump for producing and maintaining a high vacuum
US4389165A (en) * 1979-09-29 1983-06-21 Tohoku University Ion pump for producing an ultrahigh degree of vacuum
FR2740607A1 (fr) * 1995-10-27 1997-04-30 Commissariat Energie Atomique Pompe ionique a anode ajouree
US20100310383A1 (en) * 2008-02-14 2010-12-09 National Institute Of Information And Communications Technology Ion pump system and electromagnetic field generator
DE102010055420A1 (de) * 2010-12-21 2012-06-21 Vacom Vakuum Komponenten & Messtechnik Gmbh Elektrodenvorrichtung für eine Ionenzerstäuberpumpe

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2826501B1 (de) * 1978-06-16 1979-11-08 Siemens Ag Evakuierungsvorrichtung zur Erzeugung eines Isoliervakuums um die supraleitende Wicklung eines Rotors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2988657A (en) * 1958-08-02 1961-06-13 Philips Corp Ion pump

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1083974B (de) * 1959-08-20 1960-06-23 Heraeus Gmbh W C Verfahren zum Betrieb einer Getter- oder Getter-Ionenpumpe und Getter-Ionenpumpe

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2988657A (en) * 1958-08-02 1961-06-13 Philips Corp Ion pump

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3398879A (en) * 1966-10-07 1968-08-27 Perkin Elmer Corp Asymmetric ion pump and method
US3489336A (en) * 1967-08-25 1970-01-13 Max Josef Schonhuber Getter-ion pump for producing and maintaining a high vacuum
US4389165A (en) * 1979-09-29 1983-06-21 Tohoku University Ion pump for producing an ultrahigh degree of vacuum
FR2740607A1 (fr) * 1995-10-27 1997-04-30 Commissariat Energie Atomique Pompe ionique a anode ajouree
WO1997015943A1 (fr) * 1995-10-27 1997-05-01 Commissariat A L'energie Atomique Pompe ionique a anode ajouree
US20100310383A1 (en) * 2008-02-14 2010-12-09 National Institute Of Information And Communications Technology Ion pump system and electromagnetic field generator
US8512005B2 (en) * 2008-02-14 2013-08-20 National Institute Of Information And Communications Technology Ion pump system and electromagnetic field generator
DE102010055420A1 (de) * 2010-12-21 2012-06-21 Vacom Vakuum Komponenten & Messtechnik Gmbh Elektrodenvorrichtung für eine Ionenzerstäuberpumpe

Also Published As

Publication number Publication date
CH412181A (de) 1966-04-30
DE1201945B (de) 1965-09-30

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