US3348073A - Gate controlled electronic switch - Google Patents

Gate controlled electronic switch Download PDF

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Publication number
US3348073A
US3348073A US465511A US46551165A US3348073A US 3348073 A US3348073 A US 3348073A US 465511 A US465511 A US 465511A US 46551165 A US46551165 A US 46551165A US 3348073 A US3348073 A US 3348073A
Authority
US
United States
Prior art keywords
diode
electronic switch
transformer
gate controlled
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US465511A
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English (en)
Inventor
Oudard Albert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merlin Gerin SA
Original Assignee
Merlin Gerin SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merlin Gerin SA filed Critical Merlin Gerin SA
Application granted granted Critical
Publication of US3348073A publication Critical patent/US3348073A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region

Definitions

  • the opening position of the mechanical switch corresponds to the closing portion (turned on) of the semi-conductor switch and vice versa so that the device cannot be incorporated in an automobile ignition system without considerable modifications of the electrical and mechanical arrangements.
  • a charge formed by a resistor R is' connected to a direct current network by means of a gate controlled switch of the type mentioned (GTO diode).
  • the low power trigger pulses for the switch are emitted by the secondary Winding S of a pulse transformer T.
  • the primary winding P of the transformer T is connected by a diode or rectifier D and a resistor R to a source of direct current U preferably having a low internal impedance.
  • a mechanical contact C can short-circuit the branch of the circuit containing the primary winding P and the diode D.
  • the switch functions in the following manner:
  • a stepped voltage is suddenly applied to the primary winding P of the transformer T by means of the diode D.
  • a voltagehaving a very rigid front (the transformer T being duly dimensioned) and the amplitude of which is substantially equal to that of the voltage applied to the primary winding P multiplied by the ratio of the transformer.
  • The'duration of the trigger pulse is a function of the time constant of the circuit, and the negative polarity (with respect to the cathode of the GTO diode) of the pulse is obtained through the winding direction of the transformer T.
  • This pulse applied to the control electrode :2 of the GTO diode, causes turning off of the latter and opening of the electronic switch. It should be noted that the opening of the contact C does not produce sparks, in view of the low amplitude of the current i and the ohmic nature of the interrupted circuit.
  • a positive trigger pulse must be applied to the electrode e and this pulse is produced through the closing of the contact C.
  • the said closing of the contact C causes the current i to flow again through the resistor R and the contact C and the sudden disappearance of the voltage at the terminals of the primary winding P and the diode D produces a current i flowing through the primary winding P, the contact C and the diode D.
  • This current i emanates from the energy stored in the transformer T.
  • control circuit which has just been described makes it possible to obtain at the electrode 2 firstly a negative pulse having a rigid front and the amplitude of which is substantially equal to that of the source S if the ratio of the transformer T is equal to 1 (the resistance of R and that of the diode D being very low), and secondly a positive pulse having a less steep but adequate front, the amplitude of which is substantially equal to that of the voltage appearing at the terminals of the diode D it the ratio of the transformer is equal to 1.
  • This thus makes it possible, by a judicious choice of elements, to obtain square trigger pulses of suitable amplitude, duration and polarity.
  • transformer T makes it possible to separate the auxiliary source S completely from the main network.
  • diode D by limiting the amplitude of the positive pulses, avoids an overloading or destruction of the GTO diode.
  • An electronic switch comprising a pulse transformer having a primary winding and a secondary winding, a first circuit comprising said secondary winding and a gate controlled semi-conductor device operatively connected thereto to be alternately turned on and turned off by application of trigger pulses of opposite polarity applied to the gate of said device by said secondary winding, a sec- 0nd circuit comprising, successively connected'in a closed series loop a supply source of direct current, a resistor, a

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)
  • Driving Mechanisms And Operating Circuits Of Arc-Extinguishing High-Tension Switches (AREA)
US465511A 1964-06-25 1965-06-21 Gate controlled electronic switch Expired - Lifetime US3348073A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR979689A FR1407822A (fr) 1964-06-25 1964-06-25 Interrupteur électronique

Publications (1)

Publication Number Publication Date
US3348073A true US3348073A (en) 1967-10-17

Family

ID=8833244

Family Applications (1)

Application Number Title Priority Date Filing Date
US465511A Expired - Lifetime US3348073A (en) 1964-06-25 1965-06-21 Gate controlled electronic switch

Country Status (8)

Country Link
US (1) US3348073A (de)
BE (1) BE664146A (de)
CH (1) CH419283A (de)
DE (1) DE1228665B (de)
FR (1) FR1407822A (de)
GB (1) GB1104855A (de)
NL (1) NL6507460A (de)
SE (1) SE306559B (de)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3509376A (en) * 1965-07-22 1970-04-28 Lockheed Aircraft Corp Static solid-state switching circuit utilizing a switching device having turn-on and turn-off control
US3740583A (en) * 1971-05-25 1973-06-19 Bendix Corp Silicon controlled rectifier gate drive with back bias provisions
US3898570A (en) * 1968-07-26 1975-08-05 Us Navy High speed control circuit
FR2301972A1 (fr) * 1975-02-24 1976-09-17 Rca Corp Circuit de commande de la conduction d'un dispositif semi-conducteur
DE2913974A1 (de) * 1979-04-05 1980-10-23 Licentia Gmbh Steuerschaltung fuer gto-thyristoren
US4297594A (en) * 1978-09-27 1981-10-27 Hitachi, Ltd. Gate circuit for a gate turn-off thyristor
US4305371A (en) * 1980-02-14 1981-12-15 Oppama Kogyo Kabushiki Kaisha Contactless ignition circuit for internal combustion engines
US4675543A (en) * 1985-04-05 1987-06-23 Mitsubishi Denki Kabushiki Kaisha Drive circuit for gate turnoff thyristor
EP1890393A1 (de) * 2006-08-16 2008-02-20 SEMIKRON Elektronik GmbH & Co. KG Verfahren zur Impulsübertragung und Schaltungsanordnung zur Durchführung dieses Verfahrens

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3127522A (en) * 1959-01-30 1964-03-31 Sperry Rand Corp Time controlled switch using saturable core input

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1197075B (de) * 1961-09-16 1965-07-22 Roehm & Haas Gmbh Verfahren zur Herstellung von Cyanformamid

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3127522A (en) * 1959-01-30 1964-03-31 Sperry Rand Corp Time controlled switch using saturable core input

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3509376A (en) * 1965-07-22 1970-04-28 Lockheed Aircraft Corp Static solid-state switching circuit utilizing a switching device having turn-on and turn-off control
US3898570A (en) * 1968-07-26 1975-08-05 Us Navy High speed control circuit
US3740583A (en) * 1971-05-25 1973-06-19 Bendix Corp Silicon controlled rectifier gate drive with back bias provisions
FR2301972A1 (fr) * 1975-02-24 1976-09-17 Rca Corp Circuit de commande de la conduction d'un dispositif semi-conducteur
US4297594A (en) * 1978-09-27 1981-10-27 Hitachi, Ltd. Gate circuit for a gate turn-off thyristor
DE2913974A1 (de) * 1979-04-05 1980-10-23 Licentia Gmbh Steuerschaltung fuer gto-thyristoren
US4305371A (en) * 1980-02-14 1981-12-15 Oppama Kogyo Kabushiki Kaisha Contactless ignition circuit for internal combustion engines
US4675543A (en) * 1985-04-05 1987-06-23 Mitsubishi Denki Kabushiki Kaisha Drive circuit for gate turnoff thyristor
EP1890393A1 (de) * 2006-08-16 2008-02-20 SEMIKRON Elektronik GmbH & Co. KG Verfahren zur Impulsübertragung und Schaltungsanordnung zur Durchführung dieses Verfahrens

Also Published As

Publication number Publication date
DE1228665B (de) 1966-11-17
SE306559B (de) 1968-12-02
FR1407822A (fr) 1965-08-06
NL6507460A (de) 1965-12-27
GB1104855A (en) 1968-03-06
CH419283A (fr) 1966-08-31
BE664146A (de) 1965-09-16

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