US3641382A - Channel intensifier glass compositions - Google Patents
Channel intensifier glass compositions Download PDFInfo
- Publication number
- US3641382A US3641382A US843745A US3641382DA US3641382A US 3641382 A US3641382 A US 3641382A US 843745 A US843745 A US 843745A US 3641382D A US3641382D A US 3641382DA US 3641382 A US3641382 A US 3641382A
- Authority
- US
- United States
- Prior art keywords
- matrix
- input
- face
- channel
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011521 glass Substances 0.000 title description 19
- 239000000203 mixture Substances 0.000 title description 13
- 238000003384 imaging method Methods 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 abstract description 31
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 7
- 239000001257 hydrogen Substances 0.000 abstract description 7
- 238000009826 distribution Methods 0.000 abstract description 3
- 239000005368 silicate glass Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 9
- 239000004020 conductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000013590 bulk material Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910001451 bismuth ion Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
- C03C3/105—Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/24—Dynodes having potential gradient along their surfaces
Definitions
- one unit area of the device is sufficiently similar to that of any 3,253,434 9 a en 6 8 /6 T other unit area for image purposes.
- the matrix consists of a 3,341,730 GOOdflch 9 llead-bismuth silicate glass which has been reduced in 3,343,025 9/1967 Ignamwskl at hydrogen so that the channel surfaces have a conductive 3,520,831 7/1970 Trap ..3 1 3/103 X reduced oxide layer i a resistivity in the range 010 to 1 14 ohms/square.
- This invention relates to electronic image intensifier devices. More particularly the invention relates to channel intensifier devices and to electronic imaging tubes employing such devices. Such devices will be defined later but, briefly, they are secondary-emissive electron-multiplier devices comprising a matrix in the form of a plate having a large number of elongated channels passing through its thickness, said plate having a first conductive layer on its input face and a separate second conductive layer on its output face to act respectively as input and output electrodes.
- a potential difference is applied between the set up an electron field to accelerate the electrons, which field establishes a potential gradient created by current flowing through resistive surfaces formed inside the channels or (if such channel surfaces are absent) through the bulk material of the matrix.
- Secondary-emissive multiplication takes place in the channels and the output electrons may be acted upon by a further accelerating field which may be set up between the output electrode and a suitable target, for example a luminescent display screen.
- channel intensifier devices or, more briefly, channel plates
- a channel intensifier device is a secondary-emissive electron-multiplier device for an electronic imaging tube which device comprises a resistive matrix in the form of a plate the major surfaces of which constitute the input and output faces of the matrix, a conductive layer on the input face of the matrix serving as an input electrode, a separate conductive layer on the output face of the matrix serving as an output electrode, and elongated channels each providing a passageway from one face of the assembly consisting of matrix and input and output electrodes to the other face of said assembly, the distribution and cross sections of the channels and the resistivity of the matrix being such that the resolution and electron multiplication characteristic of any one unit area of the device is sufficiently similar to that of any other unit area for the imaging purposes envisaged.
- imaging tube or system employing such a device can be referred to for convenience as an image intensifier" tube or system rather than as an image converter” tube or system even in applications where the primary purpose is a change in the wavelength of the radiation of the image.
- FIG. 1 of the drawing An embodiment of an X-ray image intensifier according to the invention is diagrammatically shown in cross section in FIG. 1 of the drawing, while FIG. 2 serves for further explaining the manner in which the ray conversion takes place.
- an evacuated envelope 1 which is manufactured from insulating material, for example, glass or ceramic or from metal, for example, aluminum, the flat wall part on the left-hand side is permeable to X-rays and the flat wall on the right-hand side is transparent so that in certain cases these parts of the wall have to be provided with windows.
- the shape which these parts of the wall must have in that they are sufficiently strong is not shown because this is a known structural problem.
- the envelope is provided with lead-in conductors 2, 3 and 4 for electric voltages.
- the secondary-emission intensifier 5 and a fluorescent screen 6 are arranged in the space enclosed by the envelope. lt is noted in this connection that the simplest possible arrangement is shown. It is normal that in X-ray intensifiers a reduced image is reproduced on the viewing screen of the two electrode layers of the matrix so as to photocathode image by electron optical projection. Further means required for that purpose may be provided in the present image intensifier without departing thereby from the way shown of converting the X-rays into radiation for the image observation.
- the secondary-emission intensifier is lined on both sides with a conducting layer, the coating 7 being connected to the supply conductor 2 and the coating 8 to the supply conductor 3.
- the fluorescent screen is connected to the supply conductor 4. Increasing voltages are supplied from the two voltage sources 9 and 10 with the supply conductors 2, 3 and 4.
- FIG. 2 shows a small portion of the secondary-emission intensifier 5, namely two joints 1] and 12 between successive channels l3, l4 and 15.
- the whole intensifier consists of channels spaced apart in a similar manner.
- X-rays impinging. upon the solid material are indicated by the waving lines X, and X,.
- the ray X has penetrated to the point D, where a photoelectron is liberated.
- This electron substantially moves at right angles to the direction of the incident ray along the line Ph 1.
- the point where this electron is generated is so near to the surface of the solid substance that there is no chance for it to generate any further secondary electrons in the substance.
- the photoelectron enters the channel 14 and crosses to the opposite side where one or more secondary electrons are liberated at the point where it impinges.
- the movement of these electrons is directed in the longitudinal direction of 'the channel.
- the electrons Under the influence of transverse components of the speed which are also operative, the electrons will repeatedly strike the wall of the channel as a result of which their number increases continuously.
- the invention provides a channel intensifier device (as herein defined) wherein the matrix is made of a glass having substantially the following composition (in mol SiO -70 to 80 AMO to 4 PbO-7.5 to 18 "together 0-l3 Bi O 0.5 to 4.0 and wherein the channel surfaces have a conductive reduced oxide layer with a resistivity in the range l0 to ohms/square.
- the main effect of increasing the PhD and/or Bi O at the expense of silica is to produce layers having more conductivity.
- the rate of fall in resistivity is greater for Boo, than for PhD.
- the alumina has substantially no effect on the electrical properties of the material, its main or sole function being to increase the hardness of the glass.
- a preferred range of compositions is as follows (the percentages are mol throughout):
- this composition is suitable for a relatively large and coarse channel intensifier device for use in an X-ray image converter, the channel diameter being approximately p..
- Blodgett in the second of the references cited has shown that most of the conduction occurs within a distance of approximately 100 A. of the surface exposed to the hydrogen although the blackened layer is of the order 1 to 2 ,u. thick.
- a channel intensifier device comprising a platelike resistive matrix provided with a plurality of narrow parallel channels extending between opposite major surfaces of said matrix which constitute the input and output faces respectively of the matrix, and conductive layers on the input and output faces respectively of said matrix, said matrix consisting of a glass of substantially one of the following compositions (in mol Composition 1 Composition 2 SiO, 73.3 72.3 AhO, l .l 1.] PhD l0.8 [0.8
- channel surfaces have a conductive reduced oxide layer with a resistivity in the range 10' to l0 ohms/square 2.
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Electron Tubes For Measurement (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB36567/68A GB1168415A (en) | 1968-07-31 | 1968-07-31 | Improvements in or relating to Image Intensifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3641382A true US3641382A (en) | 1972-02-08 |
Family
ID=10389313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US843745A Expired - Lifetime US3641382A (en) | 1968-07-31 | 1969-07-22 | Channel intensifier glass compositions |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3641382A (de) |
| JP (1) | JPS5247300B1 (de) |
| BE (1) | BE736909A (de) |
| CH (1) | CH533358A (de) |
| FR (1) | FR2014085A1 (de) |
| GB (1) | GB1168415A (de) |
| NL (1) | NL6911515A (de) |
| SE (1) | SE342715B (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3911167A (en) * | 1970-05-01 | 1975-10-07 | Texas Instruments Inc | Electron multiplier and method of making same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4577133A (en) * | 1983-10-27 | 1986-03-18 | Wilson Ronald E | Flat panel display and method of manufacture |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU153979A1 (de) * | ||||
| GB937425A (en) * | 1960-03-31 | 1963-09-18 | Corning Glass Works | Image orthicon target |
| US3258434A (en) * | 1962-08-01 | 1966-06-28 | Gen Electric | Semiconducting glass |
| US3341730A (en) * | 1960-04-20 | 1967-09-12 | Bendix Corp | Electron multiplier with multiplying path wall means having a reduced reducible metal compound constituent |
| US3343025A (en) * | 1961-06-09 | 1967-09-19 | Bendix Corp | Electron multiplier array for image intensifier tubes |
| US3394261A (en) * | 1964-05-29 | 1968-07-23 | Philips Corp | Electronic intensifier device for producing a visible image from an X-ray image |
| US3520831A (en) * | 1966-01-29 | 1970-07-21 | Philips Corp | Electrically conductive glass for a secondary emission electrode |
-
1968
- 1968-07-31 GB GB36567/68A patent/GB1168415A/en not_active Expired
-
1969
- 1969-07-22 US US843745A patent/US3641382A/en not_active Expired - Lifetime
- 1969-07-26 NL NL6911515A patent/NL6911515A/xx unknown
- 1969-07-28 JP JP5904269A patent/JPS5247300B1/ja active Pending
- 1969-07-28 SE SE10618/69*A patent/SE342715B/xx unknown
- 1969-07-28 CH CH1148069A patent/CH533358A/de not_active IP Right Cessation
- 1969-07-31 FR FR6926288A patent/FR2014085A1/fr not_active Withdrawn
- 1969-07-31 BE BE736909D patent/BE736909A/xx unknown
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU153979A1 (de) * | ||||
| GB937425A (en) * | 1960-03-31 | 1963-09-18 | Corning Glass Works | Image orthicon target |
| US3341730A (en) * | 1960-04-20 | 1967-09-12 | Bendix Corp | Electron multiplier with multiplying path wall means having a reduced reducible metal compound constituent |
| US3343025A (en) * | 1961-06-09 | 1967-09-19 | Bendix Corp | Electron multiplier array for image intensifier tubes |
| US3258434A (en) * | 1962-08-01 | 1966-06-28 | Gen Electric | Semiconducting glass |
| US3394261A (en) * | 1964-05-29 | 1968-07-23 | Philips Corp | Electronic intensifier device for producing a visible image from an X-ray image |
| US3520831A (en) * | 1966-01-29 | 1970-07-21 | Philips Corp | Electrically conductive glass for a secondary emission electrode |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3911167A (en) * | 1970-05-01 | 1975-10-07 | Texas Instruments Inc | Electron multiplier and method of making same |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1937413A1 (de) | 1970-02-19 |
| DE1937413B2 (de) | 1976-06-24 |
| SE342715B (de) | 1972-02-14 |
| NL6911515A (de) | 1970-02-03 |
| BE736909A (de) | 1970-02-02 |
| FR2014085A1 (de) | 1970-04-10 |
| CH533358A (de) | 1973-01-31 |
| GB1168415A (en) | 1969-10-22 |
| JPS5247300B1 (de) | 1977-12-01 |
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