US3721550A - Process for producing a heterogenous penetration-bonded metal - Google Patents

Process for producing a heterogenous penetration-bonded metal Download PDF

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Publication number
US3721550A
US3721550A US00128059A US3721550DA US3721550A US 3721550 A US3721550 A US 3721550A US 00128059 A US00128059 A US 00128059A US 3721550D A US3721550D A US 3721550DA US 3721550 A US3721550 A US 3721550A
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United States
Prior art keywords
metal
diffusion
impregnation
copper
melting
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Expired - Lifetime
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US00128059A
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English (en)
Inventor
H Schreiner
H Hassler
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Siemens AG
Siemens Corp
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Siemens Corp
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Publication date
Priority claimed from DE19702014639 external-priority patent/DE2014639C3/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • H01H1/0203—Contacts characterised by the material thereof specially adapted for vacuum switches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B22F3/26—Impregnating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • H01H2001/0208—Contacts characterised by the material thereof containing rhenium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/929—Electrical contact feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/1216—Continuous interengaged phases of plural metals, or oriented fiber containing

Definitions

  • the invention relates to a method of producing a heterogenous, penetration-bonded metal for use as a contact material for vacuum switches.
  • the pores of a pore containing sintered structure comprising a burnoff resistant, high melting metal such as tungsten, rhenium or molybdenum, are filled with a lower melting metal of good electrical conductivity, such as silver, copper, or a lower melting alloy of these metals.
  • a structure or skeleton of the high melting metal is first sintered. This is then saturated or impregnated with the lower melting metal or alloy. Subsequently, at least one metal, with a high vapor pressure is installed as an alloy component, by means of diffusion, into the lower melting impregnation metal which is contained in the pores of the high melting metal structure.
  • the diffusion metal is located in an auxiliary metal and the diffusion temperature is below the melting temperature of the impregnation metal.
  • the present invention relates to a method of producing a heterogenous, penetration-bonded metal for use as contact material for vacuum switches.
  • the pores of a pore containing sintered structure, comprising a burnoff resistant, high-melting metal, such as tungsten, rhenium or molybdenum, are filled with a lower melt ing metal with good electrical conductivity, such as silver, and copper, or with a lower melting alloy of these metals.
  • An object of our invention is to provide a method for producing a heterogenous penetration-bonded metal
  • a porous or skeleton structure is first of all sintered from a high melting metal (structure metal).
  • structure metal has to 60 and preferably 30 40 percent by volume pores which are impregnated with the lower melting metal or with the lower melting metal alloy (impregnation metal).
  • at least one metal with high vapor pressure is installed as an alloying component (diffusion metal) by means of diffusion and in a liquid state, into the lower melting impregnation metal, which is located in the pores of the high melting metal structure.
  • the diffusion metal is installed together with an auxiliary metal and the diffusion temperature is below the melting temperature of the impregnation metal.
  • the advantage of a two layer contact piece so produced is that a layer free of bismuth is present on the application side.
  • This layer consists, for example, of MoCu or WCu and can be connected in an ongoing manner, with the carrier metal, by conventional hard silver solders.
  • the diffusion is effected via a liquid phase which forms from the diffusion metal, the auxiliary metal and the impregnation metal.
  • the auxiliary metal has the task, in addition to forming a liquid phase with the impregnation metal, to dissolve the diffusion metal and to produce the necessary concentration through dilution.
  • the amount of auxiliary metal is so determined that with the diffusion conditions as determined by temperature and time, a defined diffusion depth is obtained through the formation of a specific amount of liquid phase with the impregnation metal.
  • the right concentration of diffusion metal in the auxiliary metal helps to adjust the desired concentration of diffusion metal in the impregnation metal or alloy, which forms with the auxiliary metal, following the diffusion via the liquid phase.
  • the diffusion with the liquid phase proceeds quickly compared to a diffusion in a solid state, so that a uniform distribution is obtained even after 10 to 30 minutes.
  • the end of diffusion is determined by the equilibrium conditions between auxiliary metal, diffusion metal and impregnation metal at the diffusion temperatures selected. When the liquid phase disappears the diffusion can only be continued in a solid state, wherefore its rate is considerably reduced. Since the diffusion in a liquid state occurs rapidly and uniformly, the depth of penetration is approximately the same over the entire area and an almost planar diffusion surface area occurs.
  • Another particular advantage of the present invention is the economy and the technical maintenance of the diffusion temperature, within narrow limits in association with the production of such contact pieces.
  • an equilibrium Bi-content of 2 percent results in a diffusion temperature of l075 C.
  • this temperature is only 8 C below the melting temperature of the impregnation metal copper, it is virtually impossible to comply with the temperature requirement in a furnace for the purpose of manufacture.
  • Similar conditions occur when copper is used as auxiliary metal and bismuth as the diffusion metal and also when the equilibrium requirement of 2% Bi is aimed at in Cu saturation metal.
  • the advantage associated with the use of an auxiliary metal which forms a lower melting alloy with the saturation metal e.g.
  • the practical execution is so effected that the auxiliary metal and the diffusion metal is placed in form of an alloy at a predetermined weight ratio, below or above the contact piece to be diffused, which comprises the structure metal tungsten and the impregnation metal copper.
  • a pulverulent mixture of the auxiliary metal and the diffusion metal e.g. silver and bismuth in the form of a powder mixture or a pressed pulverulent mass
  • a pulverulent mixture of the auxiliary metal and the diffusion metal e.g. silver and bismuth in the form of a powder mixture or a pressed pulverulent mass
  • Suitable diffusion metals are: bismuth, gallium, tellurium and lead
  • auxiliary metals are: silver, magnesium or silicon, for copper based impregnation. Copper, antimony, silicon and zinc may be used as the auxiliary metal when silver is used as the impregnation metal.
  • FIGS. 1 to 4 schematically illustrate the method of the invention with reference to the following two Examples:
  • EXAMPLE 1 This Example describes the product vacuum switch contact piece comprising WCuBi with auxiliary metal as the contact layer with WCu (without bismuth) as the carrier layer.
  • Tungsten which was produced by reducing WO with a particle size 60 um, was reduced in hydrogen at l,000 C, for 1 hour.
  • a pressure of 2.5 lVlp/cm pressed bodies with a diameter of 33 mm and a height of 6 mm were produced whose pressure density 8,, 13.0 g/cm corresponded to a space filling rate r 0.674.
  • the sintering of the pressed bodies ensued at l,600 C during one hour in a vacuum (P 10' Torr). Following the sintering process, the furnace was gassed with argon. The linear sintering shrinkage is l percent.
  • the impregnation was carried out at l,200 C for a period of 30 minutes, under hydrogen.
  • the hydrogen was subsequently pumped off and evacuation took place for 2 hours at l,300 to l,500 C.
  • FIG. 2 shows the WCu contact piece 5 in the saturation device 1, after impregnation.
  • the copper layer 6 has formed on the bottom of the contact piece 5.
  • the excess impregnation copper denoted 7, is located on the upper surface.
  • the thickness of the copper layer 6, at the bottom of the copper piece, is usually between 0.5 and mm and preferably between 2 and 5 mm. It
  • the excess impregnation copper 7 is subsequently changed to a thickness of about 0.3 mm.
  • the WCu contact piece 5 with copper layer 6 on the bottom and the turned-up copper layer 8 at the surface (FIG. 3) is coated in the impregnation device 1 with a powder mixture 9 composed of 1.5 g silver and 0.5 g bismuth.
  • the diffusion temperature is thereafter adjusted at l,000 C.
  • a liquid phase occurs out of Cu and Ag with the Bi uniformly distributed therein (in equilibrium about 80% Cu and Ag). in order that the liquid metal does not run down, the copper layer 8 was provided with an elevated edge.
  • the liquid phase causes the formation of a WCuBi layer of uniform thickness. In the example, it amounts to 1.6 mm.
  • FIG. 4 is a schematic illustration of the layer build-up of the completed contact piece after the CuAgBi layer has been turned off at the surface.
  • the actual contact layer 10 consists of WCuAgBi, under which lies the WCu layer 11 and on the connecting side the Cu layer 12.
  • the copper layer 12 can be hard-soldered perfectly with the carrier member for the contact piece, which is usually made of copper.
  • the hard solder is usually CuAg of eutectic composition.
  • EXAMPLE 2 This Example describes the production of contact pieces for vacuum switches comprising MoCuBi with auxiliary metals as the contact layer and MoCu (without bismuth) as the carrier layer.
  • Molybdenum powder which was obtained through a reduction of the oxides and has a particle size 60 um, was reduced in hydrogen at l,00O C for 1 hour.
  • Pressed objects having a diameter of 35 mm and a height of 8 mm were produced with a pressure of l Mp/cm; had a pressure density 8,, 4.96 g/cm, corresponding to a space filling rate R 0.487.
  • the sintering of the pressed objects took place at l,550 C for 1 hour in a vacuum, at a pressure of about 10' Torr. After the sintering process, the furnace is gassed with argon. The linear sinter shrinkage amounts to about 14.5 percent.
  • the work cycle of the ensuing method was analogous to that in Example 1.
  • impregnation took place at l,200 C for 30 minutes, under hydrogen.
  • the hydrogen was pumped off and evacuation took place for 2 hours, at l,300 to l,500 C.
  • the saturation excess copper is thereafter turned to a thickness of approximately 0.3 mm.
  • the MoCu contact piece with the copper layer on the bottom and the turned-off copper layer on the surface was coated with a powder mixture composed of 1.5 g silver and 0.5 g bismuth.
  • the copper layer was provided with a raised edge so that the liquid metal could not run off. Thereafter, diffusion took place at temperatures between 900 and 1,000" C.
  • a liquid phase of Cu and Ag developed at 900 to 1,000 C wherein the Bi was uniformly distributed (in equilibrium, the liquid phase has a composition of about 58% Cu and 42% (20%) Ag).
  • the liquid phase forms a MoCuBi layer of uniform thickness. In the disclosed Example it amounts to about 0.1 (1.7) mm, at a diffusion temperature of 900 to l,000 C.
  • the layer build-up will be as follows: the actual contact layer consists of MoCuAgBi, below is the MoCu layer,on the connecting side is the Cu layer.
  • copper layer may be impeccably soldered with the carrier member for the contact piece, which is usually comprised of copper.
  • the hard solder used is usually CuAg of eutectic composition.
  • the amount of auxiliary metal in the diffusion zone of the completed contact piece is about 5 to 30, and
  • the diffusion metal in the diffusion zone of the finished contact piece is about 0.3 to 2 percent and preferably 0.4 to 0.8 percent by weight of the sum comprising saturation metal, auxiliary metal and diffusion metal.
  • the depth of diffusion should be within the range of 0.5 to 3 mm. preferably 1.5 to 2.5 mm. A value of 2 to 2.5 mm was obtained with a WCu 20 original body of 30 mm diameter which is diffused, for approximately 15 minutes at 980 C, with a diffusion tablet of 2.2 g and 22 mm diameter of composition AgCu15Te8.
  • a burnoff resistant high melting metal selected from tungsten, rhenium and molybdenum

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Powder Metallurgy (AREA)
  • Contacts (AREA)
  • Manufacture Of Switches (AREA)
  • High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)
US00128059A 1970-03-26 1971-03-25 Process for producing a heterogenous penetration-bonded metal Expired - Lifetime US3721550A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702014639 DE2014639C3 (de) 1970-03-26 Verfahren zum Herstellen eines heterogenen Durchdringungs-Verbundmetalls

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CH (1) CH519775A (de)
GB (1) GB1339965A (de)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3985512A (en) * 1972-11-08 1976-10-12 Siemens Aktiengesellschaft Telluride containing impregnated electric contact material
US4014659A (en) * 1973-11-16 1977-03-29 Siemens Aktiengesellschaft Impregnated compound metal as contact material for vacuum switches and method for its manufacture
US4032301A (en) * 1973-09-13 1977-06-28 Siemens Aktiengesellschaft Composite metal as a contact material for vacuum switches
US5126102A (en) * 1990-03-15 1992-06-30 Kabushiki Kaisha Toshiba Fabricating method of composite material
US5167697A (en) * 1990-06-18 1992-12-01 Nippon Tungsten Co., Ltd. Substrate material for mounting semiconductor device thereon and manufacturing method thereof
US5620804A (en) * 1988-11-10 1997-04-15 Lanxide Technology Company, Lp Metal matrix composite bodies containing three-dimensionally interconnected co-matrices
US5956558A (en) * 1996-04-30 1999-09-21 Agency For Defense Development Fabrication method for tungsten heavy alloy
WO2004038049A1 (ja) 2002-10-28 2004-05-06 A.L.M.T.Corp. 複合材料、その製造方法およびそれを用いた部材
WO2006079495A1 (de) * 2005-01-27 2006-08-03 Abb Technology Ag Verfahren zur herstellung eines kontaktstückes, sowie kontaktstück für eine vakuumschaltkammer selbst
US20060257279A1 (en) * 2005-05-11 2006-11-16 Hitachi Powdered Metals Co., Ltd. Production method of electrode for cold cathode fluorescent lamp
US20140196934A1 (en) * 2011-07-22 2014-07-17 Kyocera Corporation Wiring substrate and electronic device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9102062D0 (en) * 1991-01-31 1991-03-13 Otter Controls Ltd Improvements relating to conductors for switching applications
US5892424A (en) * 1995-02-10 1999-04-06 The Furukawa Electric Co., Ltd. Encapsulated contact material and a manufacturing method therefor, and a manufacturing method and a using method for an encapsulated contact
DE19612143B4 (de) * 1996-03-27 2005-05-04 Abb Patent Gmbh Verfahren zur Herstellung eines Spiralkontaktstückes für eine Vakuumkammer und Vorrichtung zur Durchführung des Verfahrens

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3985512A (en) * 1972-11-08 1976-10-12 Siemens Aktiengesellschaft Telluride containing impregnated electric contact material
US4032301A (en) * 1973-09-13 1977-06-28 Siemens Aktiengesellschaft Composite metal as a contact material for vacuum switches
US4014659A (en) * 1973-11-16 1977-03-29 Siemens Aktiengesellschaft Impregnated compound metal as contact material for vacuum switches and method for its manufacture
US5620804A (en) * 1988-11-10 1997-04-15 Lanxide Technology Company, Lp Metal matrix composite bodies containing three-dimensionally interconnected co-matrices
US5126102A (en) * 1990-03-15 1992-06-30 Kabushiki Kaisha Toshiba Fabricating method of composite material
US5167697A (en) * 1990-06-18 1992-12-01 Nippon Tungsten Co., Ltd. Substrate material for mounting semiconductor device thereon and manufacturing method thereof
US5956558A (en) * 1996-04-30 1999-09-21 Agency For Defense Development Fabrication method for tungsten heavy alloy
EP1566456A4 (de) * 2002-10-28 2010-01-20 Almt Corp Verbundwerkstoff, herstellungsverfahren daf r und element damit
WO2004038049A1 (ja) 2002-10-28 2004-05-06 A.L.M.T.Corp. 複合材料、その製造方法およびそれを用いた部材
WO2006079495A1 (de) * 2005-01-27 2006-08-03 Abb Technology Ag Verfahren zur herstellung eines kontaktstückes, sowie kontaktstück für eine vakuumschaltkammer selbst
US20080163476A1 (en) * 2005-01-27 2008-07-10 Abb Technology Ag Process For Producing A Contact Piece, And Contact Piece For A Vacuum Interrupter Chamber Itself
US8302303B2 (en) * 2005-01-27 2012-11-06 Abb Technology Ag Process for producing a contact piece
US20120312785A1 (en) * 2005-01-27 2012-12-13 Abb Technology Ag Contact piece for a vacuum interrupter chamber
US8869393B2 (en) * 2005-01-27 2014-10-28 Abb Technology Ag Contact piece for a vacuum interrupter chamber
US20060257279A1 (en) * 2005-05-11 2006-11-16 Hitachi Powdered Metals Co., Ltd. Production method of electrode for cold cathode fluorescent lamp
US7666348B2 (en) * 2005-05-11 2010-02-23 Hitachi Powdered Metals Co., Ltd. Production method of electrode for cold cathode fluorescent lamp
US20140196934A1 (en) * 2011-07-22 2014-07-17 Kyocera Corporation Wiring substrate and electronic device
US9596747B2 (en) * 2011-07-22 2017-03-14 Kyocera Corporation Wiring substrate and electronic device

Also Published As

Publication number Publication date
DE2014639A1 (de) 1971-10-14
CH519775A (de) 1972-02-29
GB1339965A (en) 1973-12-05
DE2014639B2 (de) 1972-11-09

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