US4812880A - Exposure apparatus - Google Patents

Exposure apparatus Download PDF

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Publication number
US4812880A
US4812880A US07/067,122 US6712287A US4812880A US 4812880 A US4812880 A US 4812880A US 6712287 A US6712287 A US 6712287A US 4812880 A US4812880 A US 4812880A
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United States
Prior art keywords
wafer
alignment
light
exposure apparatus
reticle
Prior art date
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Expired - Lifetime
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US07/067,122
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English (en)
Inventor
Kazufumi Ogawa
Masaru Sasago
Masayuki Endo
Takeshi Ishihara
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., 1006 OAZA KADOMA, KADOMA, OSAKA 571 JAPAN reassignment MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., 1006 OAZA KADOMA, KADOMA, OSAKA 571 JAPAN ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: ENDO, MASAYUKI, ISHIHARA, TAKESHI, OGAWA, KAZUFUMI, SASAGO, MASARU
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light

Definitions

  • This invention relates to an exposure apparatus used in fabrication of semiconductor devices, and more particularly to a reduction-projective type excimer exposure apparatus which is capable of realizing an ultrafine processing by the technique of photolithography in fabrication of semiconductor devices.
  • stepper reduction-projective type exposure apparatus
  • a superhigh pressure mercury lamp as the light source for use in fine processing of semiconductor devices, especially LSI and VLSI.
  • the resolution was limited at about 1.2 ⁇ m in g-line and about 0.8 ⁇ m in i-line. At such wavelengths, it is nearly impossible to obtain a resolution of 0.5 ⁇ m that is said to be necessary for fabrication of 4-Mbit DRAM or 16-Mbit DRAM henceforth.
  • the first problem may be solved by developing an optical system which can adjust the vertical mode while disturbing the lateral mode of the excimer laser beam, but in the second problem of selection of alignment light, it is preferable to employ a method of directly aligning by the reticle, mask and mark of wafer through a reduction-projective lens by using the same light as the exposure wavelength in order to enhance the alignment precision (which is called the through-the-lens method or TTL method here in after), and it is advantageous in that the lens designing is easy.
  • TTL method through-the-lens method
  • alignment light and exposure wavelength in different regions, for example, conventionally, to use d-line (577 nm) or e-line (546 nm) or Ar laser (515 nm) as alignment light in contrast to the exposure wavelength of g line or i-line of superhigh pressure mercury lamp.
  • the alignment precision may be notably improved by inserting an image intensifier (IIT) before the camera, converting the light of 300 to 400 nm wavelength into light in the vicinity of 550 nm, and amplifying about 1000 to 10000 times.
  • this invention presents an exposure apparatus capable of aligning the reticle and wafer by direct TTL method, by using, for example KrF (248 nm) excimer light as the light for exposure and i-line or j-line as the alignment light, and converting the alignment light by IIT and then reading the alignment key, for example, by CCD, whereby it is possible to form ultrafine exposure pattern (for example, baking resist pattern of 0.5 to 0.3 nm), and a further high precision alignment (for example 0.1 to 0.05 ⁇ m) may be achieved.
  • ultrafine exposure pattern for example, baking resist pattern of 0.5 to 0.3 nm
  • a further high precision alignment for example 0.1 to 0.05 ⁇ m
  • This invention is accordingly very effective henceforth for fabrication of super-super-LSI, such as 16MDRAM and 64MDRAM.
  • FIG. 1 is a conceptual illustration to explain the concept of an exposure apparatus using an excimer light source of this invention
  • FIG. 2, FIG. 3, FIG. 4 are characteristic diagrams showing the spectral characteristics of photodegradable reagents that can be used in positive resists for alignment of i-line, j-line and HeCd laser beam, respectively;
  • FIG. 5 is a characteristic diagram showing the spectral characteristic of a novolak base polymer.
  • the light source unit is composed of a KrF excimer light source 1, an integrator 2 for dispersing and emitting the laser beam emitted from the excimer light source 1, a condenser lens 3 for focusing the dispersed light, and a mirror 4 for changing the direction of the optical axis.
  • the reduction-projective unit is composed of a reticle 6 fixed on a reticle stage 5, a reduction-projective lens 7, and a wafer (semiconductor substrate) 9 fixed on an XY wafer stage 8.
  • a wafer 9 On the wafer 9 is formed an alignment key 12 on which a resist 30 is applied.
  • the exposure apparatus requires a controlling computer 10 for recognizing the alignment optical system and alignment key, processing the image, and controlling the XY wafer stage 8. That is, it is necessary to match the positions of the alignment key 11 on the reticle and the alignment key 12 on the wafer.
  • the alignment optical system has HeCd laser or superhigh pressure mercury lamp as the lightsource for alignment 13, and after focusing the light by a focusing lens 14, the light necessary for alignment, for example, only i-line or j-line is picked up by a filter 15 (or monochromator) in the superhigh pressure mercury lamp, or it is directly used in the HeCd laser, and the alignment light is introduced into the alignment optical path by using a beam splitter for alignment 16.
  • the light is allowed to enter selectively the alignment key 11 on the reticle 6 by using an alignment lens for correction of chromatic aberration and optical path length of the light for exposure (KrF excimer light 248 nm), and HeCd laser, i-line or j-line.
  • an imaging lens 19 and a CCD camera 20 on the optical axis are disposed so as to recognize, as an image, the light returning after entering the alignment keys 11, 12 and being reflected.
  • the light returning from the alignment keys 11, 12 as an image is the light in the wavelength of HeCd laser beam, i-line or j-line only, and it is therefore designed to convert it into the light of about 550 nm sensible to the CCD by using IIT 21 and amplify about 1000 to 10000 times.
  • microchannel plate used in the IIT for this wavelength that is, HeCd laser beam, j-line or i-line, meanwhile, F1217 (manufactured by Hamamatsu Photonics), for example, may be used.
  • a novolak positive resist may be used by partly modifying.
  • a naphthoquinone derivative shown in formula I below
  • a positive resist possessing sensitivity to light of 248 nm for exposure and very small in absorption in the vicinity of 365 nm may be prepared (of which spectral characteristic is shown in FIG. 2).
  • FIG. 5 As the spectral characteristic of novolak base polymer, a version as shown in FIG. 5 is commercially available. From FIG. 5 it is known that light of 300 to 400 nm can be transmitted sufficiently.
  • the exposure apparatus of this invention it is possible to use KrF excimer light with 248 nm as the exposure wavelength, and HeCd laser beam or i-line or j-line of superhigh pressure mercury lamp as the alignment light.
  • an exposure pattern may be obtained on the wafer in the following method. That is, the wafer 9 preliminarily coated with photo resist (for example, novolak positive resist) is fixed on the XY wafer stage 8, and the XY wafer stage is controlled to match the positions of alignment keys 11 and 12 by using HeCd laser beam, i-line or j-line as the alignment light, and the excimer laser light source is operated to print the reticle pattern on the resist placed on the wafer.
  • photo resist for example, novolak positive resist

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
US07/067,122 1986-07-02 1987-06-29 Exposure apparatus Expired - Lifetime US4812880A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61-155346 1986-07-02
JP61155346A JP2650895B2 (ja) 1986-07-02 1986-07-02 露光装置および露光方法

Publications (1)

Publication Number Publication Date
US4812880A true US4812880A (en) 1989-03-14

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US07/067,122 Expired - Lifetime US4812880A (en) 1986-07-02 1987-06-29 Exposure apparatus

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US (1) US4812880A (ja)
JP (1) JP2650895B2 (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4937619A (en) * 1986-08-08 1990-06-26 Hitachi, Ltd. Projection aligner and exposure method
EP0439052A1 (en) * 1990-01-18 1991-07-31 Matsushita Electric Industrial Co., Ltd. Exposure system
US5039596A (en) * 1989-06-29 1991-08-13 Hoechst Celanese Corporation Deep u.v. photoresist process utilizing compositions containing polycyclic cyclopentane 2-diazo-1,3-dione
US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
US5300404A (en) * 1990-01-30 1994-04-05 Matsushita Electric Industrial Co., Ltd. Process for forming a positive pattern through deep ultraviolet exposure, heat treatment and development with TMAH solution containing an alcohol to improve adhesion
US5370974A (en) * 1992-06-26 1994-12-06 International Business Machines Corporation Laser exposure of photosensitive polyimide for pattern formation
US5381210A (en) * 1992-12-03 1995-01-10 Nikon Corporation Exposing apparatus
US5965320A (en) * 1990-10-18 1999-10-12 Toyo Gosei Kogyo Co., Ltd. Positive photoresist composition containing phenol ester of 1,2-napthoquinone-(2)-diazide-6-sulfonic acid and pattern formation method using the composition
US20050243296A1 (en) * 2001-05-22 2005-11-03 Canon Kabushiki Kaisha Position detecting method and apparatus, exposure apparatus and device manufacturing method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05225796A (ja) * 1991-12-06 1993-09-03 Mitsubishi Electric Corp 半導体記憶装置
JPH07153296A (ja) * 1993-11-26 1995-06-16 Nec Corp 半導体記憶装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4458994A (en) * 1981-05-29 1984-07-10 International Business Machines Corporation High resolution optical lithography method and apparatus having excimer laser light source and stimulated Raman shifting
US4653903A (en) * 1984-01-24 1987-03-31 Canon Kabushiki Kaisha Exposure apparatus
US4667109A (en) * 1984-03-09 1987-05-19 Canon Kabushiki Kaisha Alignment device
US4703166A (en) * 1984-06-21 1987-10-27 American Telephone And Telegraph Company, At&T Bell Laboratories System for maintaining the optical alignment between stationary and moving equipment in deep-UV lithography

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60222862A (ja) * 1984-04-19 1985-11-07 Canon Inc 露光装置
JPS62188316A (ja) * 1986-02-14 1987-08-17 Canon Inc 投影露光装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4458994A (en) * 1981-05-29 1984-07-10 International Business Machines Corporation High resolution optical lithography method and apparatus having excimer laser light source and stimulated Raman shifting
US4653903A (en) * 1984-01-24 1987-03-31 Canon Kabushiki Kaisha Exposure apparatus
US4667109A (en) * 1984-03-09 1987-05-19 Canon Kabushiki Kaisha Alignment device
US4703166A (en) * 1984-06-21 1987-10-27 American Telephone And Telegraph Company, At&T Bell Laboratories System for maintaining the optical alignment between stationary and moving equipment in deep-UV lithography

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4937619A (en) * 1986-08-08 1990-06-26 Hitachi, Ltd. Projection aligner and exposure method
US5039596A (en) * 1989-06-29 1991-08-13 Hoechst Celanese Corporation Deep u.v. photoresist process utilizing compositions containing polycyclic cyclopentane 2-diazo-1,3-dione
EP0439052A1 (en) * 1990-01-18 1991-07-31 Matsushita Electric Industrial Co., Ltd. Exposure system
US5227838A (en) * 1990-01-18 1993-07-13 Matsushita Electric Industrial Co., Ltd. Exposure system
US5300404A (en) * 1990-01-30 1994-04-05 Matsushita Electric Industrial Co., Ltd. Process for forming a positive pattern through deep ultraviolet exposure, heat treatment and development with TMAH solution containing an alcohol to improve adhesion
US5965320A (en) * 1990-10-18 1999-10-12 Toyo Gosei Kogyo Co., Ltd. Positive photoresist composition containing phenol ester of 1,2-napthoquinone-(2)-diazide-6-sulfonic acid and pattern formation method using the composition
US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
US5370974A (en) * 1992-06-26 1994-12-06 International Business Machines Corporation Laser exposure of photosensitive polyimide for pattern formation
US5381210A (en) * 1992-12-03 1995-01-10 Nikon Corporation Exposing apparatus
US20050243296A1 (en) * 2001-05-22 2005-11-03 Canon Kabushiki Kaisha Position detecting method and apparatus, exposure apparatus and device manufacturing method
US7148973B2 (en) * 2001-05-22 2006-12-12 Canon Kabushiki Kaisha Position detecting method and apparatus, exposure apparatus and device manufacturing method

Also Published As

Publication number Publication date
JPS6310520A (ja) 1988-01-18
JP2650895B2 (ja) 1997-09-10

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