US6258972B1 - Pattern formation method and surface treating agent - Google Patents

Pattern formation method and surface treating agent Download PDF

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US6258972B1
US6258972B1 US08/691,124 US69112496A US6258972B1 US 6258972 B1 US6258972 B1 US 6258972B1 US 69112496 A US69112496 A US 69112496A US 6258972 B1 US6258972 B1 US 6258972B1
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substituted
hydrocarbon group
carbons
semiconductor substrate
saturated hydrocarbon
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Satoko Nakaoka
Masayuki Endo
Hiromi Ohsaki
Akiko Katsuyama
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Shin Etsu Chemical Co Ltd
Panasonic Holdings Corp
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Shin Etsu Chemical Co Ltd
Matsushita Electric Industrial Co Ltd
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Priority to US08/888,129 priority Critical patent/US6054255A/en
Assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., SHIN-ETSU CHEMICAL CO., LTD. reassignment MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. A CORRECTIVE ASSIGNMENT TO ADD ASSIGNEE ON REEL 8128 FRAME 0326 Assignors: OHSAKI, HIROMI, ENDO, MASAYUKI, KATSUYAMA, AKIKO, NAKAOKA, SATOKO
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion

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  • the present invention relates to a pattern formation method whereby a resist pattern is formed on a semiconductor substrate in the process of manufacturing semiconductor devices and to a surface treating agent for use in the process of forming the resist pattern.
  • FIGS. 12 and 13 a pattern formation method using a chemically amplified resist will be described as a first conventional embodiment.
  • FIG. 12 shows the process flow of the pattern formation method according to the first conventional embodiment.
  • FIG. 13 shows a surface of a semiconductor substrate formed by the pattern formation method according to the first conventional embodiment.
  • HMDS hexamethyldisilazane
  • the process is performed by bubbling liquid HMDS with the use of a nitrogen gas and spraying HMDS to the surface of the semiconductor substrate 1 heated to 60° C. for 30 seconds, as shown in FIG. 13 ( a ).
  • Si(CH 3 ) 3 trimethylsilyl group
  • Si(CH 3 ) 3 trimethylsilyl group
  • NH 3 ammonia
  • a resist film is formed by coating the surface of the semiconductor substrate with a chemically amplified resist.
  • the resist film is then exposed to light using a desired mask and sequentially subjected to post-exposure bake (hereinafter referred to as PEB) and development, resulting in a resist pattern.
  • PEB post-exposure bake
  • a pattern formation method using a resist containing, e.g., a phenol-based resin will be described as a second conventional embodiment.
  • n 0, 1, or 2;
  • X represents a halogen group or —OR′ group (R′ represents an alkyl group having 1 to 3 carbons);
  • R 1 represents a group containing CH 2 ⁇ CH—, ZCH 2 — (Z represents a halogen group), or
  • R 2 represents a hydrogen or an alkyl group having 1 to 3 carbons
  • a resist containing, e.g., a phenol resin is applied to the surface of the semiconductor substrate to form a resist film, which is then exposed to light using a desired mask and sequentially subjected to PEB and development, resulting in a resist pattern.
  • FIGS. 14 and 15 show schematic cross-sectional configurations of a resist pattern 2 formed on the semiconductor substrate 1 made of silicon or on a semiconductor substrate 5 made of BPSG by the pattern formation method according to the first conventional embodiment.
  • FIGS. 14 and 15 show the cross-sectional configurations of patterns with 0.25- ⁇ m lines and spaces obtained by coating the surface of the semiconductor substrate 1 made of silicon or the semiconductor substrate 5 made of BPSG with a positive chemically amplified resist (KRF K2G commercially available from Japan Synthetic Rubber Co., Ltd.) having a thickness of 0.7 ⁇ m, exposing the resist to light by a KrF excimer laser stepper having a numerical aperture of 0.5, performing PEB with respect to the resist at a temperature of 100° C. for 90 seconds, and developing the resist in a 2.38 wt % aqueous solution of tetramethylammonium hydroxide.
  • KRF K2G commercially available from Japan Synthetic Rubber Co., Ltd.
  • an insoluble skin layer 3 is formed on the surface of the resist pattern 2 as shown in FIG. 14 or a footing 4 is formed at the base of the resist pattern 2 as shown in FIG. 15 .
  • the formation of the insoluble skin layer 3 on the surface of the resist pattern 2 or the formation of the footing 4 at the base of the resist pattern 2 may be attributed to different atmospheres or different states on the surface of the substrate in which the pattern is formed.
  • the insoluble skin layer 3 formed on the surface of the resist pattern 2 or the footing 4 formed at the base of the resist pattern 2 will adversely affect the subsequent process, resulting in a first problem of a reduction in the yield of semiconductor devices.
  • peeling off may occur when a pattern with a line width of 0.30- ⁇ m or less is formed by exposure to an i line, when a pattern with a line width of 0.25- ⁇ m or less is formed by exposure to a KrF excimer laser, or when a pattern with a line width of 0.20- ⁇ m or less is formed by exposure to an ArF excimer laser.
  • a first object of the present invention is to prevent the formation of an insoluble skin layer on the surface of a resist pattern.
  • a second object of the present invention is to prevent the formation of a footing at the base of the resist pattern.
  • a third object of the present invention is to further improve the adhesion of the resist pattern to the semiconductor substrate.
  • the present inventors have examined various factors which may cause the insoluble skin layer to be formed on the surface of the resist pattern and found that an alkaline component is the cause. Specifically, when an alkaline component is present on the surface of the resist pattern, an acid generated on exposure to light is deactivated, resulting in the formation of the insoluble skin layer on the surface of the resist pattern having a T-top configuration. The finding is also endorsed by a report on the case where a pattern is not formed because of an excessive amount of alkaline component (S. A. MacDonald et al., Proc. SPIE, vol. 1466, p.2, 1991).
  • the present inventors have also examined various factors which may cause the footing to be formed at the base of the resist pattern and found that the presence of atoms having lone pair electrons deactivates the acid generated on exposure to light and causes the footing to be formed.
  • the atoms having the lone pair electrons there can be listed phosphorus atoms on a semiconductor substrate made of BPSG and nitrogen atoms on a semiconductor substrate made of TiN or SiN.
  • a first aspect of the present invention is implemented based on the former finding, wherein a surface treating agent containing a silane compound represented by the following general formula (1) is used instead of conventional HMDS so that an alkaline component is not generated on the surface of a semiconductor substrate.
  • a first pattern formation method comprises: a first step of treating a surface of a semiconductor substrate with a surface treating agent containing a silane compound represented by the following general formula (1); a second step of coating the treated surface of the semiconductor substrate with a chemically amplified resist to form a resist film; and a third step of exposing the resist film to light with the use of a mask having a desired pattern configuration and developing the resist film to form a resist pattern:
  • n represents an integer of 1 to 3;
  • R represents a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or a substituted or non-substituted alkylcarbonyl group having 1 to 6 carbons; and
  • R 1 are the same or different and each represents a hydrogen atom, a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons).
  • the surface of the semiconductor substrate is treated with the surface treating agent containing the silane compound represented by the foregoing general formula (1), so that an alkaline component is not generated thereon after surface treatment. Accordingly, an acid generated from the chemically amplified resist on exposure to light does not react with an alkaline component. Hence, there can steadily be formed a resist pattern in given configuration with no insoluble skin layer formed on the surface thereof.
  • the first pattern formation method enables steady formation of a resist pattern in given configuration with no insoluble skin layer formed on the surface thereof, since an alkaline component is absent on the surface of the chemically amplified resist between exposure to light and PEB and hence the acid generated in the chemically amplified resist on exposure to light is not deactivated.
  • the chemically amplified resist used in the second step is limited to a chemically amplified resist containing an acid generator and a resin changed to be alkali-soluble by the action of an acid, there can be inhibited the deactivation of the acid in the case of using a two-component-type positive chemically amplified resist.
  • the chemically amplified resist used in the second step is limited to a chemically amplified resist containing an acid generator, an alkali-soluble resin, and a compound or resin changed to be alkali-soluble by the action of an acid, there can be inhibited the deactivation of the acid in the case of using a three-component-type positive chemically amplified resist.
  • the chemically amplified resist used in the second step is limited to a chemically amplified resist containing an acid generator, an alkali-soluble resin, and a compound or resin in which crosslinking is caused by the action of an acid, there can be inhibited the deactivation of the acid in the case of using a three-component-type negative chemically amplified resist.
  • a second aspect of the present invention is implemented based on the latter finding, wherein a surface treating agent containing a silane compound represented by the following general formula (2), (3), (4), or (5) is used instead of conventional HMDS so that a layer of hydrocarbon groups is interposed between atoms having lone pair electrons on the surface of the semiconductor substrate and a chemically amplified resist, which prevents a footing from being formed in a resist pattern and thereby remarkably improves the configuration of a resist pattern.
  • a surface treating agent containing a silane compound represented by the following general formula (2), (3), (4), or (5) is used instead of conventional HMDS so that a layer of hydrocarbon groups is interposed between atoms having lone pair electrons on the surface of the semiconductor substrate and a chemically amplified resist, which prevents a footing from being formed in a resist pattern and thereby remarkably improves the configuration of a resist pattern.
  • the second pattern formation method comprises: a first step of treating a surface of a semiconductor substrate with a surface treating agent containing a silane compound represented by the following general formula (2), (3), (4), or (5); a second step of coating the treated surface of the semiconductor substrate with a chemically amplified resist to form a resist film; and a third step of exposing the resist film to light with the use of a mask having a desired pattern configuration and developing the resist film to form a resist pattern:
  • R represents a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or a substituted or non-substituted alkylcarbonyl group having 1 to 6 carbons;
  • R 1 are the same or different and each represents a hydrogen atom, a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons; and
  • R 2 represents a substituted or non-substituted saturated hydrocarbon group having 3 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 3 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons
  • n represents an integer of 1 to 3;
  • R 3 are the same or different and each represents a hydrogen atom or a non-substituted saturated hydrocarbon group having 1 to 3 carbons;
  • R 1 are the same or different and each represents a hydrogen atom, a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons;
  • R 2 represents a substituted or non-substituted saturated hydrocarbon group having 3 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 3 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons
  • R 3 represents a hydrogen atom or a non-substituted saturated hydrocarbon group having 1 to 3 carbons
  • R 1 are the same or different and each represents a hydrogen atom, a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons
  • R 2 represents a substituted or non-substituted saturated hydrocarbon group having 3 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 3 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons
  • R 3 represents a hydrogen atom or a non-substituted saturated hydrocarbon group having 1 to 3 carbons
  • R 1 represents a hydrogen atom, a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons
  • R 2 represents a substituted or non-substituted saturated hydrocarbon group having 3 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 3 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons).
  • the layer of hydrocarbon groups is interposed between the atoms having the lone pair electrons present on the surface of the semiconductor substrate and the chemically amplified resist, so that the acid generated from the chemically amplified resist hardly reacts with the lone pair electrons on the surface of the semiconductor substrate. Consequently, the footing is prevented from being formed in the resist pattern, which remarkably improves the configuration of the resist pattern.
  • the hydrophobicity of the surface of the semiconductor substrate is also improved. This also serves as a factor lowering the reactivity of the acid generated from the chemically amplified resist with the lone pair electrons on the surface of the semiconductor substrate, while preventing the footing from being formed in the resist pattern and improving the configuration of the resist pattern.
  • the operation for removing a byproduct (ammonia, dialkylamine, or the like) from the system should be performed.
  • the layer of hydrocarbon groups is positively interposed between the atoms having the lone pair electrons present on the surface of the semiconductor substrate and the chemically amplified resist.
  • FIG. 11 ( a ) is a view illustrating a contact angle ⁇ serving as an index of hydrophobicity.
  • FIG. 11 ( b ) is a graph showing a relationship between the number represented by x and the contact angle ⁇ in
  • FIG. 11 ( b ) shows the result when the surface treating agent is bubbled with the use of an nitrogen gas and sprayed onto the surface of the semiconductor substrate heated to 120° C. for 30 seconds.
  • the second pattern formation method is achieved based on the foregoing finding and implemented with the silane compound represented by the foregoing general formula (2), (3), (4), or (5) in which at least one of hydrocarbon groups substituting for the silicon atom has 3 or more carbons.
  • the surface of the semiconductor substrate is treated with the surface treating agent containing the silane compound represented by the general formula (2), (3), (4), or (5), so that the layer of hydrocarbon groups is formed between the atoms having the lone pair electrons present on the surface of the semiconductor substrate and the chemically amplified resist and the hydrophobicity of the surface of the semiconductor substrate is thereby improved. Accordingly, the acid generated from the chemically amplified resist hardly reacts with the lone pair electrons on the surface of the semiconductor substrate, which prevents the deactivation of the acid generated from the chemically amplified resist and the formation of the footing in the resist pattern.
  • the surface treating agent containing the silane compound represented by the general formula (2), (3), (4), or (5) so that the layer of hydrocarbon groups is formed between the atoms having the lone pair electrons present on the surface of the semiconductor substrate and the chemically amplified resist and the hydrophobicity of the surface of the semiconductor substrate is thereby improved. Accordingly, the acid generated from the chemically amplified
  • the chemically amplified resist used in the second step is limited to a chemically amplified resist containing an acid generator and a resin changed to be alkali-soluble by the action of an acid, there can be inhibited the deactivation of the acid in the case of using a two-component-type positive chemically amplified resist.
  • the chemically amplified resist used in the second step is limited to a chemically amplified resist containing an acid generator, an alkali-soluble resin, and a compound or resin changed to be alkali-soluble by the action of an acid, there can be inhibited the deactivation of the acid in the case of using a three-component-type positive chemically amplified resist.
  • the chemically amplified resist used in the second step is limited to a chemically amplified resist containing an acid generator, an alkali-soluble resin, and a compound or resin in which crosslinking is caused by the action of an acid, there can be inhibited the deactivation of the acid in the case of using a three-component-type negative chemically amplified resist.
  • a third aspect of the present invention is implemented based on the finding that, when various experiments are conducted on the surface treating agent according to the first pattern formation method, the adhesion of the resist pattern to the semiconductor substrate is improved when the surface of the semiconductor substrate is treated with a silane compound represented by the following general formula (6).
  • the third pattern formation method comprises: a first step of treating a surface of a semiconductor substrate with a surface treating agent containing a silane compound represented by the following general formula (6); a second step of coating the treated surface of the semiconductor substrate with a resist to form a resist film; and a third step of exposing the resist film to light with the use of a mask having a desired pattern configuration and developing the resist film to form a resist pattern:
  • n represents an integer of 1 to 3;
  • R 4 represents a substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or a substituted or non-substituted alkylcarbonyl group having 1 to 6 carbons; and
  • R 1 are the same or different and each represents a hydrogen atom, a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons).
  • R 4 in the silane compound represented by the foregoing general formula (6) is preferably any of a substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, and a substituted or non-substituted alkylcarbonyl group having 1 to 6 carbons. This is because the density of electrons on the silicon atom is reduced due to a halogen group, an unsaturated bond, or a carbonyl group present in the chemical structure of R 4 , which increases the acidity on the surface of the semiconductor substrate and the reactivity of the silane compound with the substrate.
  • the surface treating agent exhibits increased treating ability with respect to the substrate and improves the hydrophobicity of the substrate, it is more preferred as a surface treating agent.
  • the treating ability is higher as the contact angle of the substrate after treatment serving as an index of treating ability is higher.
  • Table 1 shows a relationship between the silane compound contained in the surface treating agent and the contact angle. It can be understood from Table 1 that a large contact angle can be obtained by using the silane compound represented by the foregoing general formula (6) (EXAMPLE 1, 2, 3, or 4 in Table 1).
  • Table 1 shows contact angles when the surface treating agent is bubbled with the use of a nitrogen gas and sprayed onto the surface of the semiconductor substrate heated to 120° C. for 30 seconds.
  • the surface of the semiconductor substrate is treated with the surface treating agent containing the silane compound represented by the general formula (6), the density of electrons on the silicon atom is reduced owing to the halogen group, unsaturated bond, or carbonyl group in molecules composing the silane compound, which increases the acidity on the surface of the semiconductor substrate and the reactivity of the silane compound with the substrate, resulting in an increased number of silyl groups attached on the surface of the semiconductor substrate.
  • the hydrophobicity of the semiconductor substrate is improved, which improves the adhesion of the resist pattern to the semiconductor substrate.
  • the adhesion of the resist pattern having the naphthoquinonediazido compound and the novolac resin to the semiconductor substrate is improved.
  • a surface treating agent for treating a surface of a semiconductor substrate according to the present invention contains a silane compound represented by the following general formula (7):
  • n represents an integer of 1 to 3;
  • R represents a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or a substituted or non-substituted alkylcarbonyl group having 1 to 6 carbons; and
  • R 1 are the same or different and each represents a hydrogen atom, a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons).
  • an alkaline component is not generated on the surface of the semiconductor substrate after surface treatment so that the deactivation of an acid generated from the chemically amplified resist on exposure to light is positively inhibited and a resist pattern in excellent configuration is formed.
  • FIG. 1 is a flow chart illustrating the process of a pattern formation method according to a first embodiment of the present invention
  • FIGS. 2 diagrammatically show a surface of a semiconductor substrate supplied with IPTMS in the above pattern formation method according to the first embodiment
  • FIG. 3 diagrammatically shows a cross-sectional configuration of a resist pattern formed by the above pattern formation method according to the first embodiment
  • FIG. 4 is a flow chart illustrating the process of a pattern formation method according to a second embodiment of the present invention.
  • FIGS. 5 diagrammatically show a surface of a semiconductor substrate supplied with ATMS in the above pattern formation method according to the second embodiment
  • FIG. 6 diagrammatically shows a cross-sectional configuration of a resist pattern formed by the above pattern formation method according to the second embodiment
  • FIGS. 7 diagrammatically show a surface of a semiconductor substrate supplied with IPHDMS in a pattern formation method according to a third embodiment of the present invention.
  • FIG. 8 diagrammatically shows a cross-sectional configuration of a resist pattern formed by the above pattern formation method according to the third embodiment
  • FIGS. 9 diagrammatically show a surface of a semiconductor supplied with IPTMS in a pattern formation method according to a fourth embodiment of the present invention.
  • FIG. 10 diagrammatically shows a cross-sectional configuration of a resist pattern formed by the above pattern formation method according to the fourth embodiment
  • FIG. 11 ( a ) illustrates a contact angle serving as an index of hydrophobicity of a surface of a semiconductor substrate and FIG. 11 ( b ) is a graph showing a relationship between the number represented by x and the contact angle in
  • FIG. 12 is a flow chart illustrating the process of a pattern formation method according to a first conventional embodiment
  • FIGS. 13 diagrammatically show a surface of a semiconductor substrate supplied with HMDS in the pattern formation method according to the first conventional embodiment
  • FIG. 14 diagrammatically shows a cross-sectional configuration of a resist pattern formed by the pattern formation method according to the first conventional embodiment
  • FIG. 15 diagrammatically shows a cross-sectional configuration of another resist pattern formed by the pattern formation method according to the first conventional embodiment.
  • FIG. 16 is a graph showing a relationship between the concentration of trimethylsilanol decomposed from HMDS in an environment and the concentration of ammonia in the environment.
  • a first embodiment is for implementing the first aspect of the present invention described above.
  • FIG. 1 shows the process flow of the pattern formation method according to the first embodiment.
  • FIG. 2 shows a surface of a semiconductor substrate treated with a surface treating agent according to the first embodiment.
  • FIG. 3 schematically shows a cross-sectional configuration of a pattern formed on the surface of the semiconductor substrate treated with the surface treating agent according to the first embodiment.
  • IPTMS isopropenoxytrimethylsilane
  • IPTMS isopropenoxytrimethylsilane
  • IPTMS is supplied to the surface of the semiconductor substrate 1 made of silicon
  • IPTMS is bubbled with the use of a nitrogen gas and sprayed onto the surface of the semiconductor substrate heated to 60° C. for 30 seconds
  • Si(CH 3 ) 3 trimethylsilyl group
  • (CH 3 ) 2 CO acetone
  • a chemically amplified resist is applied to the surface of the semiconductor substrate 1 and exposed to light using a desired mask.
  • the resist is then sequentially subjected to PEB and development, resulting in a pattern.
  • FIG. 3 shows a cross-sectional configuration of a pattern with 0.25- ⁇ m lines and spaces obtained by coating the surface of the semiconductor substrate 1 with a positive chemically amplified resist (KRF K2G commercially available from Japan Synthetic Rubber Co., Ltd.) having a thickness of 0.7 ⁇ m, exposing the resist to light by a KrF excimer laser stepper having a numerical aperture of 0.5, performing PEB with respect to the resist at a temperature of 100° C. for 90 seconds, and developing the resist in a 2.38 wt % aqueous solution of tetramethylammonium hydroxide.
  • KRF K2G commercially available from Japan Synthetic Rubber Co., Ltd.
  • the surface of the semiconductor substrate 1 becomes hydrophobic without generating ammonia, which prevents an insoluble skin layer from being formed on the surface of the resist pattern and steadily provides the resist pattern in given configuration.
  • a second embodiment is also for implementing the first aspect of the present invention described above.
  • FIG. 4 shows the process flow of the pattern formation method according to the second embodiment.
  • FIG. 5 shows a surface of a semiconductor substrate treated with a surface treating agent according to the second embodiment.
  • FIG. 6 schematically shows a cross-sectional configuration of a pattern formed on the surface of the semiconductor substrate treated with the surface treating agent according to the second embodiment.
  • ATMS acetoxytrimethylsilane
  • FIG. 5 ( a ) acetoxytrimethylsilane (hereinafter referred to as ATMS) as the surface treating agent is supplied to the surface of the semiconductor substrate 1 made of silicon (i.e., ATMS is bubbled with the use of a nitrogen gas and sprayed onto the surface of the semiconductor substrate heated to 60° C. for 30 seconds) to render the surface of the semiconductor substrate 1 hydrophobic and thereby improve adhesion to the semiconductor substrate 1 . Consequently, Si(CH 3 ) 3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate 1 , resulting in CH 3 COOH (acetic acid).
  • CH 3 COOH acetic acid
  • a chemically amplified resist is applied to the surface of the semiconductor substrate 1 and exposed to light using a desired mask.
  • the resist is then sequentially subjected to PEB and development, resulting in a pattern.
  • FIG. 6 shows a cross-sectional configuration of a pattern with 0.25- ⁇ m lines and spaces obtained by coating the surface of the semiconductor substrate 1 with a positive chemically amplified resist (KRF K2G commercially available from Japan Synthetic Rubber Co., Ltd.) having a thickness of 0.7 ⁇ m, exposing the resist to light by a KrF excimer laser stepper having a numerical aperture of 0.5, performing PEB with respect to the resist at a temperature of 100° C. for 90 seconds, and developing the resist in a 2.38 wt % aqueous solution of tetramethylammonium hydroxide.
  • KRF K2G commercially available from Japan Synthetic Rubber Co., Ltd.
  • the surface of the semiconductor substrate 1 becomes hydrophobic without generating ammonia, which prevents an insoluble skin layer from being formed on the surface of the resist pattern and steadily provides the resist pattern in given configuration.
  • the surface treating agent used in the first embodiment produces a trimethylsilyl group and provides acetone as the decomposition reaction product and the surface treating agent used in the second embodiment produces a trimethylsilyl group and provides an acetic acid as the decomposition reaction product
  • the surface treating agent is not limited thereto. There can be used any surface treating agent containing a silane compound represented by the following general formula (8):
  • n represents an integer of 1 to 3;
  • R represents a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or a substituted or non-substituted alkylcarbonyl group having 1 to 6 carbons; and
  • R 1 are the same or different and each represents a hydrogen atom, a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons).
  • the silane compound represented by the foregoing general formula (9) has one hydrolytic group on the silicon atom. In this case, the surface of the semiconductor substrate is treated to form a monomolecular film with excellent surface uniformity. On the other hand, the silane compound represented by the foregoing general formula (9) is susceptible to the steric hindrance of the substituent for R 1 . The susceptibility may be reflected on a reaction speed (treating ability).
  • silane compound represented by the foregoing general formula (9) include the compounds shown on Chemical Formula Lists A and B.
  • the silane compound represented by the foregoing general formula (10) has two hydrolytic groups on the silicon atom.
  • the surface of the semiconductor substrate is treated to form a multilayer film with high performance.
  • silane compound represented by the foregoing general formula (10) include the compounds shown on Chemical Formula List C.
  • the silane compound represented by the foregoing general formula (11) has three hydrolytic groups on the silicon atom.
  • the surface of the semiconductor substrate is treated to form a multilayer film with high performance.
  • the unreacted silane compound may undergo hydrolysis due to the presence of water in the ambient atmosphere and form a gel, particle contamination may occur depending on the type of the treating method.
  • silane compound represented by the foregoing general formula (11) include the compounds shown on Chemical Formula List D.
  • the silane compound represented by the above general formula (9) is characterized by its ability to steadily perform uniform treatment and the silane compound represented by the above general formula (11) is characterized by its high reactivity.
  • the two-component-type positive chemically amplified resist (KRF K2G) containing an acid generator and a resin changed to be alkali-soluble by the action of an acid has been used as the chemically amplified resist in the first and second embodiments
  • a three-component-type positive chemically amplified resist containing an acid generator, an alkali-soluble resin, and a compound or resin changed to be alkali-soluble by the action of an acid may be used instead.
  • TDUR-DP007 commercially available from Tokyo Ohka Kogyo Co., Ltd.
  • DX561 and DX981 each commercially available from Hoechst Japan Ltd.
  • a three-component-type negative chemically amplified resist containing an acid generator, an alkali-soluble resin, and a compound or resin in which crosslinking is caused by the action of an acid may be used as the chemically amplified resist.
  • the three-component-type negative chemically amplified resist there can be listed XP-8843 and SAL-601 each commercially available from Shipley Company.
  • an alkaline component generated during surface treatment deactivates an acid, which reduces the film of the pattern and degrades the configuration of the resist pattern.
  • the acid is prevented from being deactivated in the method of the present invention, a pattern in excellent configuration can be formed.
  • the first and second embodiments are effective to any chemically amplified resist.
  • a third embodiment is for implementing the second aspect of the present invention described above.
  • FIG. 7 shows a surface of a semiconductor substrate treated with a surface treating agent according to the third embodiment.
  • FIG. 8 schematically shows a cross-sectional configuration of a pattern formed on the surface of the semiconductor substrate treated with the surface treating agent according to the third embodiment.
  • IPHDMS isopropenoxy-n-hexyldimethylsilane
  • Si(CH 3 ) 2 (CH 2 CH 2 CH 2 CH 2 CH 2 CH 3 ) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate 5 , resulting in (CH 3 ) 2 CO (acetone).
  • a chemically amplified resist is applied to the surface of the semiconductor substrate 5 and exposed to light using a desired mask to form a resist film.
  • the resist film is then sequentially subjected to PEB and development, resulting in a pattern.
  • FIG. 8 shows a cross-sectional configuration of a pattern with 0.25- ⁇ m lines and spaces obtained by coating the surface of the semiconductor substrate 5 with a positive chemically amplified resist (KRF K2G commercially available from Japan Synthetic Rubber Co., Ltd.) having a thickness of 0.7 ⁇ m, exposing the resist to light by a KrF excimer laser stepper having a numerical aperture of 0.5, performing PEB with respect to the resist at a temperature of 100° C. for 90 seconds, and developing the resist in a 2.38 wt % aqueous solution of tetramethylammonium hydroxide.
  • KRF K2G commercially available from Japan Synthetic Rubber Co., Ltd.
  • IPHDMS is used as a surface treating agent in the third embodiment, it becomes possible to form the layer of hydrocarbon groups on the surface of the semiconductor substrate 5 and increase the hydrophobicity of the surface of the semiconductor substrate 5 . This prevents a footing from being formed at the base of the resist pattern 6 and steadily provides the resist pattern in given configuration.
  • the surface treating agent used in the third embodiment does not generate ammonia as a decomposition reaction product, the effect of preventing an insoluble skin layer from being formed on the surface of the resist pattern 6 is also achieved. If surface treatment is performed by using a surface treating agent which generates ammonia as a decomposition reaction product and a resist pattern is formed from a chemically amplified resist, an insoluble skin layer may be formed on the surface of the resist pattern 6 but a footing is not formed at the base of the resist pattern 6 .
  • R represents a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or a substituted or non-substituted alkylcarbonyl group having 1 to 6 carbons;
  • R 1 are the same or different and each represents a hydrogen atom, a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons;
  • R 2 represents a substituted or non-substituted saturated hydrocarbon group having 3 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 3 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons).
  • silane compound represented by the foregoing general formula (12) include one represented by the following general formula (13), (14), or (15):
  • R represents a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or a substituted or non-substituted alkylcarbonyl group having 1 to 6 carbons
  • R 1 are the same or different and each represents a hydrogen atom, a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons
  • R 2 represents a substituted or non-substituted saturated hydrocarbon group having 3 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 3 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons).
  • silane compound represented by the following general formula (16):
  • n represents an integer of 1 to 3;
  • R 3 are the same or different and each represents a hydrogen atom or a non-substituted saturated hydrocarbon group having 1 to 3 carbons;
  • R 1 are the same or different and each represents a hydrogen atom, a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons;
  • R 2 represents a substituted or non-substituted saturated hydrocarbon group having 3 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 3 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons).
  • silane compound represented by the foregoing general formula (16) there can be used a silane compound represented by the following general formula (17):
  • the silane compound represented by the foregoing general formula (17) has one hydrolytic group on the silicon atom. In this case, the surface of the semiconductor substrate is treated to form a monomolecular film with excellent surface uniformity.
  • the silane compound represented by the foregoing general formula (17) is susceptible to the steric hindrance of the substituent for R 1 or R 2 . The susceptibility may be reflected on a reaction speed (treating ability).
  • the silane compound represented by the foregoing general formula (16) there can be listed one represented by the following general formula (18):
  • the silane compound represented by the foregoing general formula (18) has two hydrolytic groups on the silicon atom.
  • the surface of the semiconductor substrate is treated to form a multilayer film with high performance.
  • the silane compound represented by the foregoing general formula (16) has three hydrolytic groups on the silicon atom.
  • the surface of the semiconductor substrate is treated to form a multilayer film with high performance.
  • the unreacted silane compound may undergo hydrolysis due to the presence of water in the ambient atmosphere and form a gel, particle contamination may occur depending on the type of the treating method.
  • R 3 is a hydrogen atom or a non-substituted saturated hydrocarbon group having 1 to 3 carbons
  • R 1 are the same or different and each represents a hydrogen atom, a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons
  • R 2 represents a substituted or non-substituted saturated hydrocarbon group having 3 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 3 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons).
  • the silane compound represented by the foregoing general formula ( 20 ) has one hydrolytic group on the silicon atom. In this case, the surface of the semiconductor substrate is treated to form a monomolecular film with excellent surface uniformity.
  • the silane compound represented by the foregoing general formula (20) is susceptible to the steric hindrance of the substituent for R 1 or R 2 . The susceptibility may be reflected on a reaction speed (treating ability).
  • the surface treating agent which enables the formation of a layer of hydrocarbon groups on the surface of the semiconductor substrate and renders the surface of the semiconductor substrate hydrophobic
  • R 3 represents a hydrogen atom or a non-substituted saturated hydrocarbon group having 1 to 3 carbons
  • R 1 represents a hydrogen atom, a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons
  • R 2 represents a substituted or non-substituted saturated hydrocarbon group having 3 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 3 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons).
  • the silane compound represented by the foregoing general formula (21) has two hydrolytic groups on the silicon atom.
  • the surface of the semiconductor substrate is treated to form a multilayer film with high performance.
  • m is 3 or 4 in the silane compound represented by the foregoing general formula (21).
  • silane compounds represented by the foregoing general formulae (12), (16), (20), and (21) include the compounds shown on Chemical Formula List E.
  • ABSENT ABSENT ABSENT (CH 3 CH 2 CH 2 ) 2 Si(OCH 3 ) 2 ABSENT CH 3 CH 2 CH 2 CH 2 CH 2 CH 2 Si(OCH 3 ) ABSENT ABSENT ABSENT ABSENT
  • silane compounds represented by the foregoing general formulae (17) and (20) are characterized by their ability to steadily perform uniform treatment and the silane compound represented by the above general formula (19) is characterized by its high reactivity.
  • a fourth embodiment is for implementing the third aspect of the present invention described above.
  • FIG. 9 shows a surface of a semiconductor substrate treated with a surface treating agent according to the fourth embodiment.
  • FIG. 10 schematically shows a cross-sectional configuration of a pattern formed on the surface of the semiconductor substrate treated with the surface treating agent according to the fourth embodiment.
  • IPTMS as the surface treating agent is supplied to the surface of the semiconductor substrate 1 made of silicon (i.e., IPTMS is bubbled with the use of a nitrogen gas and sprayed onto the surface of the semiconductor substrate heated to 60° C. for 30 seconds) to render the surface of the semiconductor substrate 1 hydrophobic and thereby improve adhesion to the semiconductor substrate 1 . Consequently, Si(CH 3 ) 3 (trimethylsilyl group) is substituted for the hydrogen atom of an OH group on the surface of the semiconductor substrate 1 , resulting in (CH 3 ) 2 CO (acetone).
  • a resist is applied to the surface of the semiconductor substrate 1 and exposed to light using a desired mask.
  • the resist is then sequentially subjected to PEB and development, resulting in a pattern.
  • FIG. 10 shows a cross-sectional configuration of a pattern with 0.30- ⁇ m lines and spaces obtained by coating the surface of the semiconductor substrate 1 with a positive resist (PFI-38 commercially available from Sumitomo Chemical Co., Ltd.) having a thickness of 1.0 ⁇ m, exposing the resist to light by an i-line stepper having a numerical aperture of 0.6, performing PEB with respect to the resist at a temperature of 100° C. for 90 seconds, and developing the resist in a 2.38 wt % aqueous solution of tetramethylammonium hydroxide.
  • PFI-38 commercially available from Sumitomo Chemical Co., Ltd.
  • IPTMS is used as the surface treating agent in the fourth embodiment, it becomes possible to increase adhesion to the semiconductor substrate 1 and provide a resist pattern in excellent configuration with no peeling off portion.
  • the resist composing the resist pattern 7 is not limited to any specific type.
  • a resist containing a naphthoquinonediazido compound and a novolac resin and a chemically amplified resist described in the first to third embodiments are widely used.
  • n represents an integer of 1 to 3;
  • R 4 represents a substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or a substituted or non-substituted alkylcarbonyl group having 1 to 6 carbons; and
  • R 1 are the same or different and each represents a hydrogen atom, a substituted or non-substituted saturated hydrocarbon group having 1 to 6 carbons, a substituted or non-substituted unsaturated hydrocarbon group having 1 to 6 carbons, or an alicyclic saturated hydrocarbon group having 3 to 6 carbons).
  • the silane compound represented by the foregoing general formula (30) has one hydrolytic group on the silicon atom.
  • the surface of the semiconductor substrate is treated to form a monomolecular film with excellent surface uniformity.
  • the silane compound represented by the foregoing general formula (23) is susceptible to the steric hindrance of the substituent for R 1 .
  • the susceptibility may be reflected on a reaction speed (treating ability).
  • the silane compound represented by the foregoing general formula (24) has two hydrolytic groups on the silicon atom. In this case, the surface of the semiconductor substrate is treated to form a multilayer film with high performance.
  • the silane compound represented by the foregoing general formula (22) there can be listed one represented by the following general formula (25):
  • the silane compound represented by the foregoing general formula (25) has three hydrolytic groups on the silicon atom.
  • the surface of the semiconductor substrate is treated to form a multilayer film with high performance.
  • the unreacted silane compound may undergo hydrolysis due to the presence of water in the ambient atmosphere and form a gel, particle contamination may occur depending on the type of the treating method.
  • silane compounds represented by the foregoing general formulae (23), (24), and (25) include the compounds shown on Chemical Formula List F.
  • ABSENT ABSENT (CH 3 ) 3 SiOCH 2 CF 3 ABSENT (CH 3 ) 2 Si(OCH 2 CF 3 ) 2 ABSENT ABSENT ABSENT
  • silane compound represented by the above general formula (23) is characterized by its ability to steadily perform uniform treatment and the silane compound represented by the foregoing general formula (25) is characterized by its high reactivity.

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050095840A1 (en) * 2003-01-25 2005-05-05 Bhanap Anil S. Repairing damage to low-k dielectric materials using silylating agents
US20060057855A1 (en) * 2004-09-15 2006-03-16 Ramos Teresa A Method for making toughening agent materials
US20060078827A1 (en) * 2000-06-23 2006-04-13 Hacker Nigel P Method to restore hydrophobicity in dielectric films and materials
US20060141641A1 (en) * 2003-01-25 2006-06-29 Wenya Fan Repair and restoration of damaged dielectric materials and films
US20060216952A1 (en) * 2005-03-22 2006-09-28 Bhanap Anil S Vapor phase treatment of dielectric materials
US20110195190A1 (en) * 2008-10-21 2011-08-11 Tokyo Ohka Kogyo Co., Ltd Surface treatment liquid, surface treatment method, hydrophobilization method, and hydrophobilized substrate
US9377687B2 (en) 2013-12-04 2016-06-28 Samsung Display Co., Ltd. Method for manufacturing pattern using chemically amplified resist
US20230227479A1 (en) * 2020-07-31 2023-07-20 Lg Chem, Ltd. Method of manufacturing alkoxysilane compound

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258972B1 (en) 1995-08-03 2001-07-10 Matsushita Electric Industrial Co., Ltd. Pattern formation method and surface treating agent
US6054255A (en) * 1996-08-01 2000-04-25 Matsushita Electric Industrial Co., Ltd. Pattern formation method and surface treating agent
TW351834B (en) * 1996-10-16 1999-02-01 Matsushita Electric Industrial Co Ltd Method of round formation and surface treatment agent
TW392229B (en) 1997-01-23 2000-06-01 Matsushita Electric Industrial Co Ltd Method of manufacturing semiconductor device and apparatus for same
TW383416B (en) * 1997-06-26 2000-03-01 Matsushita Electric Industrial Co Ltd Pattern forming method
WO2001009683A1 (en) * 1999-08-02 2001-02-08 Infineon Technologies North America Corp. Reduction of resist poisoning
DE19957928C2 (de) * 1999-12-01 2002-09-26 Helmut Hummel Verfahren zur lokalen Hydrophobierung von hydrophilen Oberflächen

Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2474704A (en) * 1948-06-29 1949-06-28 Dow Corning Method of rendering materials water-repellent
US2595729A (en) * 1945-03-09 1952-05-06 Westinghouse Electric Corp Organosilicon compounds and conductors insulated therewith
US2595728A (en) * 1945-03-09 1952-05-06 Westinghouse Electric Corp Polysiloxanes containing allyl radicals
US2649396A (en) * 1949-03-17 1953-08-18 Ralph K Witt Method of producing a bonded structure
JPS544070A (en) 1977-06-13 1979-01-12 Hitachi Ltd Manufacture for semiconductor device
JPS58188132A (ja) 1982-04-28 1983-11-02 Toyo Soda Mfg Co Ltd レジストと基板との密着性強化方法
GB2167686A (en) 1983-05-05 1986-06-04 Hughes Aircraft Co Wet process for developing styrene polymer resists for submicron lithography
EP0260977A2 (de) 1986-09-17 1988-03-23 Brewer Science, Inc. Mittel zur Adhäsionsverbesserung und Verfahren zur Behandlung von Trägern für integrierte Schaltungen damit
EP0278996A1 (de) 1987-02-17 1988-08-24 Ibm Deutschland Gmbh Verfahren zur Verbesserung der Haftung von Photoresistmaterialien
EP0291670A1 (de) 1987-05-19 1988-11-23 International Business Machines Corporation Verfahren zur Gasphasensilylierung von Photoresisten
US5091290A (en) 1990-12-03 1992-02-25 Micron Technology, Inc. Process for promoting adhesion of a layer of photoresist on a substrate having a previous layer of photoresist
EP0515212A1 (de) 1991-05-24 1992-11-25 Nippon Paint Co., Ltd. Verfahren zur Herstellung eines Resistmusters
US5312717A (en) 1992-09-24 1994-05-17 International Business Machines Corporation Residue free vertical pattern transfer with top surface imaging resists
JPH06350000A (ja) 1993-06-04 1994-12-22 Hitachi Ltd リードフレームの表面処理剤およびそれを用いた半導体集積回路装置の製造方法
US5391913A (en) 1991-12-27 1995-02-21 Matsushita Electric Industrial Co., Ltd. Semiconductor device
EP0691674A2 (de) 1994-07-05 1996-01-10 Matsushita Electric Industrial Co., Ltd. Verfahren zum Herstellen von Mikromustern
US5501943A (en) 1995-02-21 1996-03-26 Motorola, Inc. Method of patterning an inorganic overcoat for a liquid crystal display electrode
US5512422A (en) 1991-08-08 1996-04-30 Mitsubishi Denki Kabushiki Kaisha Method of forming resist pattern and organic silane compound for forming anti-reflection film for use in such method
WO1996015861A1 (en) 1994-11-22 1996-05-30 Complex Fluid Systems, Inc. Non-aminic photoresist adhesion promoters for microelectronic applications
EP0757290A2 (de) 1995-08-03 1997-02-05 Matsushita Electric Industrial Co., Ltd. Bilderzeugungsverfahren und Oberflächenbehandlungsmittel
EP0837369A1 (de) 1996-10-16 1998-04-22 Matsushita Electric Industrial Co., Ltd. Mustererzeugungsverfahren und Oberflächenbehandlungsmittel

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2595729A (en) * 1945-03-09 1952-05-06 Westinghouse Electric Corp Organosilicon compounds and conductors insulated therewith
US2595728A (en) * 1945-03-09 1952-05-06 Westinghouse Electric Corp Polysiloxanes containing allyl radicals
US2474704A (en) * 1948-06-29 1949-06-28 Dow Corning Method of rendering materials water-repellent
US2649396A (en) * 1949-03-17 1953-08-18 Ralph K Witt Method of producing a bonded structure
JPS544070A (en) 1977-06-13 1979-01-12 Hitachi Ltd Manufacture for semiconductor device
JPS58188132A (ja) 1982-04-28 1983-11-02 Toyo Soda Mfg Co Ltd レジストと基板との密着性強化方法
GB2167686A (en) 1983-05-05 1986-06-04 Hughes Aircraft Co Wet process for developing styrene polymer resists for submicron lithography
EP0260977A2 (de) 1986-09-17 1988-03-23 Brewer Science, Inc. Mittel zur Adhäsionsverbesserung und Verfahren zur Behandlung von Trägern für integrierte Schaltungen damit
EP0278996A1 (de) 1987-02-17 1988-08-24 Ibm Deutschland Gmbh Verfahren zur Verbesserung der Haftung von Photoresistmaterialien
EP0291670A1 (de) 1987-05-19 1988-11-23 International Business Machines Corporation Verfahren zur Gasphasensilylierung von Photoresisten
US5091290A (en) 1990-12-03 1992-02-25 Micron Technology, Inc. Process for promoting adhesion of a layer of photoresist on a substrate having a previous layer of photoresist
EP0515212A1 (de) 1991-05-24 1992-11-25 Nippon Paint Co., Ltd. Verfahren zur Herstellung eines Resistmusters
US5512422A (en) 1991-08-08 1996-04-30 Mitsubishi Denki Kabushiki Kaisha Method of forming resist pattern and organic silane compound for forming anti-reflection film for use in such method
US5391913A (en) 1991-12-27 1995-02-21 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US5312717A (en) 1992-09-24 1994-05-17 International Business Machines Corporation Residue free vertical pattern transfer with top surface imaging resists
JPH06350000A (ja) 1993-06-04 1994-12-22 Hitachi Ltd リードフレームの表面処理剤およびそれを用いた半導体集積回路装置の製造方法
EP0691674A2 (de) 1994-07-05 1996-01-10 Matsushita Electric Industrial Co., Ltd. Verfahren zum Herstellen von Mikromustern
WO1996015861A1 (en) 1994-11-22 1996-05-30 Complex Fluid Systems, Inc. Non-aminic photoresist adhesion promoters for microelectronic applications
US5702767A (en) 1994-11-22 1997-12-30 Complex Fluid Systems, Inc. Non-Aminic photoresist adhesion promoters for microelectronic applications
US5501943A (en) 1995-02-21 1996-03-26 Motorola, Inc. Method of patterning an inorganic overcoat for a liquid crystal display electrode
EP0757290A2 (de) 1995-08-03 1997-02-05 Matsushita Electric Industrial Co., Ltd. Bilderzeugungsverfahren und Oberflächenbehandlungsmittel
EP0837369A1 (de) 1996-10-16 1998-04-22 Matsushita Electric Industrial Co., Ltd. Mustererzeugungsverfahren und Oberflächenbehandlungsmittel

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
A. MacDonald et al., "Airborne Chemical Contamination of a Chemically Amplified Resist", proc. of SPIE vol. 1466, Advances in Resist Technology and Processing VIII, 1991.
Bazant et al., "Organosilicon Compounds", Academic Press (NY), pp. 154, 176, and 178, 1965.*
Bazant et al., "Organosilicon Compounds", vol. 2, Part 1, Academic Press, N. Y.(1965), p. 105.*
European Search Report for Corresponding Application No. EP 98 10 1196, Jul. 16, 1998.
Pinnavaia, et al. "Triorganosilicon Acetylacetonates. Enol Ether Isomerism and Stereochemical Lability," Journal of the American Chemical Society, vol. 92, No. 15, Jul. 19, 1990, pp. 4544-4550.
Taiwan Notice of Reasons for Rejection for Application No. 85108702, dated Dec. 15, 1998 (and English translation)European Search Report for Application No. 98111894, dated Nov. 9, 1998.

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070190735A1 (en) * 2000-06-23 2007-08-16 Hacker Nigel P Method to restore hydrophobicity in dielectric films and materials
US8440388B2 (en) 2000-06-23 2013-05-14 Honeywell International Inc. Method to restore hydrophobicity in dielectric films and materials
US7858294B2 (en) 2000-06-23 2010-12-28 Honeywell International Inc. Method to restore hydrophobicity in dielectric films and materials
US20060078827A1 (en) * 2000-06-23 2006-04-13 Hacker Nigel P Method to restore hydrophobicity in dielectric films and materials
US7709371B2 (en) 2003-01-25 2010-05-04 Honeywell International Inc. Repairing damage to low-k dielectric materials using silylating agents
US20050095840A1 (en) * 2003-01-25 2005-05-05 Bhanap Anil S. Repairing damage to low-k dielectric materials using silylating agents
US20060141641A1 (en) * 2003-01-25 2006-06-29 Wenya Fan Repair and restoration of damaged dielectric materials and films
US7915181B2 (en) 2003-01-25 2011-03-29 Honeywell International Inc. Repair and restoration of damaged dielectric materials and films
US7915159B2 (en) 2004-09-15 2011-03-29 Honeywell International Inc. Treating agent materials
US20060057837A1 (en) * 2004-09-15 2006-03-16 Bhanap Anil S Treating agent materials
US20060057855A1 (en) * 2004-09-15 2006-03-16 Ramos Teresa A Method for making toughening agent materials
US8475666B2 (en) 2004-09-15 2013-07-02 Honeywell International Inc. Method for making toughening agent materials
US7678712B2 (en) 2005-03-22 2010-03-16 Honeywell International, Inc. Vapor phase treatment of dielectric materials
US20060216952A1 (en) * 2005-03-22 2006-09-28 Bhanap Anil S Vapor phase treatment of dielectric materials
US20110195190A1 (en) * 2008-10-21 2011-08-11 Tokyo Ohka Kogyo Co., Ltd Surface treatment liquid, surface treatment method, hydrophobilization method, and hydrophobilized substrate
US9244358B2 (en) 2008-10-21 2016-01-26 Tokyo Ohka Kogyo Co., Ltd. Surface treatment liquid, surface treatment method, hydrophobilization method, and hydrophobilized substrate
US9377687B2 (en) 2013-12-04 2016-06-28 Samsung Display Co., Ltd. Method for manufacturing pattern using chemically amplified resist
US20230227479A1 (en) * 2020-07-31 2023-07-20 Lg Chem, Ltd. Method of manufacturing alkoxysilane compound

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