US7582939B2 - Semiconductor diode, electronic component and voltage source inverter - Google Patents

Semiconductor diode, electronic component and voltage source inverter Download PDF

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Publication number
US7582939B2
US7582939B2 US10/547,175 US54717504A US7582939B2 US 7582939 B2 US7582939 B2 US 7582939B2 US 54717504 A US54717504 A US 54717504A US 7582939 B2 US7582939 B2 US 7582939B2
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United States
Prior art keywords
semiconductor
state
region
voltage source
diode
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US10/547,175
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US20060071280A1 (en
Inventor
Mark-Matthias Bakran
Hans-Günter Eckel
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Siemens AG
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Siemens AG
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Assigned to SIEMENS AKTIENGESELLSCHAFT reassignment SIEMENS AKTIENGESELLSCHAFT ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BAKRAN, MARK-MATTHIAS, ECKEL, HANS-GUNTER
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

Definitions

  • FIG. 1 shows a comparison of the charge carrier distribution in a conventional diode with the charge carrier distribution in an exemplary embodiment of the semiconductor diode according to the invention
  • FIG. 2 shows a concrete exemplary embodiment of a semiconductor diode according to the invention that is realized as a trench element
  • FIG. 3 shows the circuit diagram of a voltage source converter, here in the form of a half-bridge, with turn-off power semiconductors and semiconductor diodes according to the invention.
  • the circuit diagram contains two turn-off power semiconductors, designated by T 1 and T 2 , and also two semiconductor diodes, designated by D 1 and D 2 .

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Inverter Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
US10/547,175 2003-02-26 2004-02-18 Semiconductor diode, electronic component and voltage source inverter Expired - Fee Related US7582939B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10308313.8 2003-02-26
DE10308313A DE10308313B4 (de) 2003-02-26 2003-02-26 Halbleiterdiode, elektronisches Bauteil, Spannungszwischenkreisumrichter und Steuerverfahren
PCT/EP2004/001541 WO2004077573A2 (de) 2003-02-26 2004-02-18 Halbleiterdiode, elektronisches bauteil, spannungszwischenkreisumrichter und steuerverfahren

Publications (2)

Publication Number Publication Date
US20060071280A1 US20060071280A1 (en) 2006-04-06
US7582939B2 true US7582939B2 (en) 2009-09-01

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Family Applications (1)

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US10/547,175 Expired - Fee Related US7582939B2 (en) 2003-02-26 2004-02-18 Semiconductor diode, electronic component and voltage source inverter

Country Status (6)

Country Link
US (1) US7582939B2 (de)
EP (1) EP1597771A2 (de)
JP (1) JP2006519485A (de)
CN (1) CN100483736C (de)
DE (1) DE10308313B4 (de)
WO (1) WO2004077573A2 (de)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100264865A1 (en) * 2007-12-14 2010-10-21 Siemens Aktiengesellschaft Drive system and associated control method
US8421184B2 (en) 2009-06-29 2013-04-16 Denso Corporation Semiconductor device
US8854109B2 (en) 2011-02-10 2014-10-07 Siemens Aktiengesellschaft Method for controlling two electrically series-connected reverse conductive IGBTs of a half bridge
US9184255B2 (en) 2011-09-30 2015-11-10 Infineon Technologies Austria Ag Diode with controllable breakdown voltage
US9685947B2 (en) 2015-03-30 2017-06-20 Halliburton Energy Services, Inc. Simplified gate driver for power transistors
US9692409B2 (en) 2015-03-30 2017-06-27 Halliburton Energy Services, Inc. Simplified gate driver for power transistors
US9780658B2 (en) 2014-09-30 2017-10-03 Siemens Aktiengesellschaft Intermediate voltage circuit current converter in five-point topology
US9829534B2 (en) 2013-06-18 2017-11-28 Siemens Aktiengesellschaft Device and method for monitoring a power semiconductor switch
US9929677B2 (en) 2013-07-17 2018-03-27 Siemens Aktiengellschaft Three-level active neutral point converter
US10408191B2 (en) 2016-03-21 2019-09-10 General Electric Company Wind pitch adjustment system

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004036278B4 (de) * 2004-07-27 2006-07-06 Siemens Ag Halbleiterbauelement und Verfahren zum Betreiben des Halbleiterbauelements als elektronischer Schalter
DE102004042758B4 (de) 2004-09-03 2006-08-24 Infineon Technologies Ag Halbleiterbauteil
DE102005019860B4 (de) * 2005-04-28 2010-11-18 Siemens Ag Steuerbare Halbleiterdiode, elektronisches Bauteil und Spannungszwischenkreisumrichter
DE102005020805A1 (de) * 2005-05-04 2006-11-16 Infineon Technologies Ag Halbbrückenschaltung mit Freilaufdioden, Ansteuerschaltung und Verfahren zum Ansteuern einer solchen Halbbrückenschaltung
US7888775B2 (en) 2007-09-27 2011-02-15 Infineon Technologies Ag Vertical diode using silicon formed by selective epitaxial growth
CN101666919B (zh) * 2009-09-21 2012-06-27 浙江大学 一种具有刻蚀容差的硅狭缝波导电极
US9590616B2 (en) 2013-07-10 2017-03-07 Denso Corporation Drive control device
US9135937B1 (en) * 2014-05-09 2015-09-15 Western Digital (Fremont), Llc Current modulation on laser diode for energy assisted magnetic recording transducer
WO2016081623A1 (en) * 2014-11-18 2016-05-26 Ideal Power Inc. Methods, systems, and devices for active charge control diodes

Citations (10)

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Publication number Priority date Publication date Assignee Title
US5082795A (en) 1986-12-05 1992-01-21 General Electric Company Method of fabricating a field effect semiconductor device having a self-aligned structure
US5633515A (en) * 1994-03-04 1997-05-27 Siemens Aktiengesellschaft Semiconductor component arrangement for overvoltage protection of MOSFETs and IGBTS
DE4333618C2 (de) 1992-10-02 1999-05-20 Fuji Electric Co Ltd Injektions-gesteuerter Schottky-Gleichrichter
US20010004322A1 (en) * 1999-12-01 2001-06-21 Seiji Kurokami Interconnection power converter and power generation apparatus using the same
US6278314B1 (en) 1998-08-31 2001-08-21 Abb Research Ltd. Electric circuit
WO2001067587A2 (de) 2000-03-09 2001-09-13 Siemens Aktiengesellschaft Stromversorgungsschaltung mit silizium-karbid-bauelementen
US20020121678A1 (en) * 2001-02-03 2002-09-05 Eddie Huang Bipolar diode
US6537921B2 (en) * 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes
US20030169611A1 (en) * 2001-04-13 2003-09-11 Yuji Nishizawa Power converter device
US6870132B2 (en) * 2000-05-22 2005-03-22 Lincoln Global, Inc. Power supply for electric arc welding

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JP2524370B2 (ja) * 1986-12-05 1996-08-14 ゼネラル・エレクトリック・カンパニイ 半導体デバイスの製造方法
KR0150793B1 (ko) * 1988-12-14 1998-10-01 씨. 에릭 헌터 탄화규소로 제조된 초고속 고온 정류다이오우드
JP3779401B2 (ja) * 1996-11-29 2006-05-31 株式会社東芝 ダイオードの駆動方法
JPH11145547A (ja) * 1997-11-05 1999-05-28 Mitsubishi Electric Corp 半導体レーザダイオード

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5082795A (en) 1986-12-05 1992-01-21 General Electric Company Method of fabricating a field effect semiconductor device having a self-aligned structure
DE4333618C2 (de) 1992-10-02 1999-05-20 Fuji Electric Co Ltd Injektions-gesteuerter Schottky-Gleichrichter
US5633515A (en) * 1994-03-04 1997-05-27 Siemens Aktiengesellschaft Semiconductor component arrangement for overvoltage protection of MOSFETs and IGBTS
US6278314B1 (en) 1998-08-31 2001-08-21 Abb Research Ltd. Electric circuit
US20010004322A1 (en) * 1999-12-01 2001-06-21 Seiji Kurokami Interconnection power converter and power generation apparatus using the same
WO2001067587A2 (de) 2000-03-09 2001-09-13 Siemens Aktiengesellschaft Stromversorgungsschaltung mit silizium-karbid-bauelementen
US6870132B2 (en) * 2000-05-22 2005-03-22 Lincoln Global, Inc. Power supply for electric arc welding
US20020121678A1 (en) * 2001-02-03 2002-09-05 Eddie Huang Bipolar diode
US20030169611A1 (en) * 2001-04-13 2003-09-11 Yuji Nishizawa Power converter device
US6537921B2 (en) * 2001-05-23 2003-03-25 Vram Technologies, Llc Vertical metal oxide silicon field effect semiconductor diodes

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Bakran M M et al.: "Evolution of IGBT Converters for Mass Transit Applications", Conference Record of the 2000 IEEE Industry Applications Conference, 35th IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy, Rome, Italy, vol. 3, Oct. 8, 2000, pp. 1930-1935, XP001043307, IEEE, New York, NY, USA.
José Rodríguez, Jih-Sheng Lai & Fang Zheng Peng: "Multilevel Inverters: A Survey of Topologies, Controls, and Applications", IEEE Transactions on Industrial Electronics, vol. 49, No. 4, Aug. 2002, pp. 724-738.
Schröder D: "Elektrische Antriebe 3-Leistungselektronische Bauelemente", 1996, pp. 373-377, XP009038852, Springler Verlag, Berlin, Germany.
Xiaoming Yuan & Ivo Barbi: "Fundamentals of a New Diode Clamping Multilevel Inverter", IEEE Transactions on Power Electronics, vol. 15, No. 4, Jul. 2000, pp. 711-718.
Y. Shakwek & E. A. Lewis: "The Universal Medium Voltage Adjustable Speed Drive", EPE '99 Lausanne, 1999, pp. 1-8.

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100264865A1 (en) * 2007-12-14 2010-10-21 Siemens Aktiengesellschaft Drive system and associated control method
US8421184B2 (en) 2009-06-29 2013-04-16 Denso Corporation Semiconductor device
US8854109B2 (en) 2011-02-10 2014-10-07 Siemens Aktiengesellschaft Method for controlling two electrically series-connected reverse conductive IGBTs of a half bridge
US9184255B2 (en) 2011-09-30 2015-11-10 Infineon Technologies Austria Ag Diode with controllable breakdown voltage
US9548400B2 (en) 2011-09-30 2017-01-17 Infineon Technologies Austria Ag Method of controlling breakdown voltage of a diode having a semiconductor body
US9829534B2 (en) 2013-06-18 2017-11-28 Siemens Aktiengesellschaft Device and method for monitoring a power semiconductor switch
US9929677B2 (en) 2013-07-17 2018-03-27 Siemens Aktiengellschaft Three-level active neutral point converter
US9780658B2 (en) 2014-09-30 2017-10-03 Siemens Aktiengesellschaft Intermediate voltage circuit current converter in five-point topology
US9685947B2 (en) 2015-03-30 2017-06-20 Halliburton Energy Services, Inc. Simplified gate driver for power transistors
US9692409B2 (en) 2015-03-30 2017-06-27 Halliburton Energy Services, Inc. Simplified gate driver for power transistors
US10408191B2 (en) 2016-03-21 2019-09-10 General Electric Company Wind pitch adjustment system

Also Published As

Publication number Publication date
US20060071280A1 (en) 2006-04-06
WO2004077573A3 (de) 2004-12-23
DE10308313A1 (de) 2004-09-16
JP2006519485A (ja) 2006-08-24
EP1597771A2 (de) 2005-11-23
DE10308313B4 (de) 2010-08-19
WO2004077573A2 (de) 2004-09-10
CN1754263A (zh) 2006-03-29
CN100483736C (zh) 2009-04-29

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