US7678600B2 - Process for manufacturing a membrane of semiconductor material integrated in, and electrically insulated from, a substrate - Google Patents

Process for manufacturing a membrane of semiconductor material integrated in, and electrically insulated from, a substrate Download PDF

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US7678600B2
US7678600B2 US12/047,830 US4783008A US7678600B2 US 7678600 B2 US7678600 B2 US 7678600B2 US 4783008 A US4783008 A US 4783008A US 7678600 B2 US7678600 B2 US 7678600B2
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membrane
forming
buried
monolithic body
insulation structure
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US20080224242A1 (en
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Flavio Francesco Villa
Pietro Corona
Chantal Combi
Lorenzo Baldo
Gabriele Barlocchi
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STMicroelectronics SRL
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Assigned to STMICROELECTRONICS S.R.L. reassignment STMICROELECTRONICS S.R.L. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: COMBI, CHANTAL, MRS., BALDO, LORENZO, MR., BARLOCCHI, GABRIELE, MR., CORONA, PIETRO, MR., VILLA, FLAVIO FRANCESCO, MR.
Assigned to STMICROELECTRONICS S.R.L. reassignment STMICROELECTRONICS S.R.L. CORRECTIVE ASSIGNMENT TO CORRECT THE DATE OF EXECUTION OF THE ASSIGNMENT RELATING TO ASSIGNOR MRS. CHANTAL COMBI, WHICH SHOULD READ "03/07/2008" (MARCH 7, 2008) PREVIOUSLY RECORDED ON REEL 020648 FRAME 0539. ASSIGNOR(S) HEREBY CONFIRMS THE DATE OF EXECUTION OF THE ASSIGNMENT RELATING TO MRS. CHANTAL COMBI SHOULD READ "03/07/2008". Assignors: COMBI, CHANTAL, MRS.
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0116—Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities

Definitions

  • the present disclosure relates to a process for manufacturing a membrane made of semiconductor material that is integrated in, and electrically insulated from, a substrate.
  • a large number of integrated semiconductor sensors are known, made with micromachining techniques, which base their operation on detection of a deformation of a thin membrane (also defined as diaphragm), suspended above a cavity.
  • a thin membrane also defined as diaphragm
  • sensors it is possible, for example, to mention absolute or differential, capacitive or piezoresistive, pressure sensors, inertial sensors, chemical sensors, magnetic-field sensors, and microphones. It is also known that it is often advantageous, or even necessary, to provide an electrical, and possibly thermal, insulation of the membrane.
  • Main known techniques for manufacturing electrically insulated membranes envisage the use of a SOI (Silicon On Insulator) wafer, or of surface micromachining techniques, with selective removal of sacrificial layers (e.g., a field-oxide or buried-oxide layer). According to these techniques, a substrate of semiconductor material is used only as a mechanical support.
  • SOI Silicon On Insulator
  • sacrificial layers e.g., a field-oxide or buried-oxide layer
  • EP-A-1 577 656 discloses a process for the manufacturing of a membrane of monocrystalline silicon suspended above a cavity, buried and entirely contained within a substrate, which is also made of silicon. This process is extremely simple and economically advantageous, and compatible with the integrated manufacturing of corresponding electronic circuits; also, the resulting structure has small dimensions.
  • the present disclosure is directed to a process for manufacturing an electrically insulated membrane of semiconductor material that will enable the aforesaid disadvantages and problems to be overcome.
  • a process for manufacturing an insulating membrane made of semiconductor material including forming, in a monolithic body of semiconductor material having a front face, a buried cavity extending at a distance from said front face and delimiting with said front face a surface region of said monolithic body, said surface region forming a membrane that is suspended above said buried cavity; forming an insulation structure in a surface portion of said monolithic body such as to electrically insulate said membrane from said monolithic body; and setting said insulation structure at a distance from said membrane so that said insulation structure is positioned outside, and at a non-zero distance of separation from said membrane.
  • a microelectromechanical structure in accordance with another embodiment of the present disclosure, includes a monolithic body of semiconductor material having a front face; and a buried cavity, extending at a distance from said front face and delimiting with said front face a membrane, which is suspended above said buried cavity; and an insulation structure in a surface portion of said monolithic body, surrounding said membrane at a non-zero distance of separation and configured to electrically insulate said membrane from said monolithic body.
  • a process includes forming at least two voids in a substrate and a membrane formed from the substrate material to completely cover at least one of the at least two voids; forming a trench completely around the membrane at a non-zero distance from the membrane and extending into the substrate to a depth that is at least a depth of at least one of the at least two voids in the substrate and in communication with at least one of the at least two voids; and forming a buried insulation region completely around the trench and all of the at least two voids via the trench to electrically insulate the membrane from a remainder of the substrate.
  • the process includes filling the trench and all but one of the at least two voids with a dielectric material to form a single uniform electrical and thermal insulation structure around the membrane while leaving a remaining void below the membrane to provide functionality to the membrane.
  • the process of forming at least two voids and the membrane includes forming at least one buried cavity and at least one buried channel and filling all but one of the at least one buried cavity and all of the buried channels with the dielectric material via the trench.
  • the trench is filled with the dielectric material.
  • the process includes etching the substrate to form a plurality of columns and performing epitaxial growth on the columns to merge a top portion of the columns to form the membrane of monocrystalline silicon that is flexible and adapted to flex above one of the at least two voids in the presence of external stress.
  • the trench is formed away from the membrane and anchorages of the membrane to the substrate a distance of separation to prevent mechanical stresses on the membrane due to discontinuity represented by a silicon-oxide junction created by the insulation structure.
  • FIG. 1 shows a top plan view of a wafer of semiconductor material in an initial step of a process for manufacturing a membrane according to a first embodiment of the present disclosure
  • FIGS. 2-4 show cross sections taken along the line II-II of the wafer of FIG. 1 in subsequent steps of the manufacturing process
  • FIG. 5 shows a top plan view of the wafer of FIG. 4 in a subsequent step of the manufacturing process
  • FIGS. 6 and 7 show cross sections taken along the line VI-VI of the wafer of FIG. 5 in conclusive steps of the manufacturing process
  • FIG. 8 shows a cross section of a wafer of semiconductor material in a manufacturing process in accordance with a second embodiment of the disclosure
  • FIGS. 9 a - 9 c show top plan views of the wafer of FIG. 8 in a subsequent step of the manufacturing process, according to different variants;
  • FIGS. 10 and 11 show cross sections taken along the line X-X of the wafer of FIG. 9 a in conclusive steps of the manufacturing process.
  • FIG. 12 shows a top plan view of the wafer of semiconductor material at the end of the manufacturing process according to a further embodiment of the present disclosure.
  • Embodiments of a process for manufacturing a suspended membrane of semiconductor material are now described. This process is based, in part, on the processes disclosed in the aforesaid European patent application No. EP-A-1 577 656, and in the European patent application No. EP-A-1 324 382, which is also filed in the name of the present applicant.
  • FIG. 1 shows a wafer 1 of semiconductor material, for example monocrystalline silicon, that includes a substrate 2 , for example of an N + type (such as to provide an electrical path with low resistance).
  • a resist layer is deposited on a top surface 1 a of the wafer 1 ; the resist layer is then defined so as to form a mask 4 (see also the cross-sectional view of FIG. 2 ).
  • the mask 4 includes a first mask region 4 a , extending, for example, over an approximately square inner area, and a second mask region 4 b , adjacent to, and extending as a frame around, the first mask region 4 a , surrounding it entirely.
  • the first and second mask regions 4 a , 4 b are made of a plurality of respective mask portions 5 a , 5 b having a generic polygonal shape (for example a square shape), arranged in a regular manner in rows and columns and defining together a grid-shaped mask opening 6 .
  • the mask portions 5 a of the first mask region 4 a are set at a first separation distance d 1
  • the mask portions 5 b of the second mask region 4 b are set at a second separation distance d 2 , greater than the first separation distance d 1
  • the mask portions 5 b of the second mask region 4 b have dimensions greater than the mask portions 5 a of the first mask region 4 a .
  • the first separation distance d 1 (equal to the side of the first mask portions 5 a ) is in the range of 0.5 and 1 ⁇ m
  • the second separation distance d 2 (equal to the side of the second mask portions 5 b ) is in the range of 1 and 2 ⁇ m.
  • first and second deep trenches 8 a , 8 b are formed in positions corresponding to the mask opening 6 , respectively of the first mask region 4 a and the second mask region 4 b .
  • the deep trenches 8 a , 8 b having for example a depth of 10 ⁇ m, delimit silicon columns, with a section corresponding to the mask portions 5 a , 5 b .
  • first columns (or pillars) 9 a are formed in a first region 2 a of the substrate 2 underneath the first mask region 4 a , and second columns 9 b in a second region 2 b of the substrate 2 , surrounding like a frame the first region 2 a , underneath the second mask region 4 b .
  • the first columns 9 a are also consequently set at the first separation distance d 1
  • the second columns 9 b at the second separation distance d 2
  • the second columns 9 b have in cross-section larger dimensions than the first columns 9 a .
  • the deep trenches 8 a , 8 b communicate with one another and form, together, a labyrinthine region of complex shape, with a section corresponding to the grid of the mask opening 6 .
  • an epitaxial growth is performed in a deoxidizing environment (typically, in an atmosphere with a high concentration of hydrogen, preferably with trichlorosilane-SiHCl 3 ). Consequently ( FIG. 3 ), an epitaxial layer 10 of monocrystalline silicon grows in a controlled way on top of the columns 9 a , 9 b and closes the aforesaid labyrinthine region at the top, trapping the gas present therein.
  • a growth of silicon occurs also inside them, which causes a reduction of their dimensions.
  • the first and second deep trenches 8 a , 8 b form respective first and second buried channels 11 a , 11 b having an oval and elongated cross section in a direction perpendicular to the top surface 1 a of the wafer 1 .
  • a step of thermal annealing is then performed, preferably in a hydrogen atmosphere for 30 minutes at 1190° C., or, alternatively, in a nitrogen atmosphere or an atmosphere of another inert gas (for example, argon), or else of a combination of hydrogen and of another inert gas.
  • a hydrogen atmosphere for 30 minutes at 1190° C.
  • a nitrogen atmosphere or an atmosphere of another inert gas for example, argon
  • the annealing step causes a migration of the silicon atoms, which tend to move into a position of lower surface energy, through adjacent lattice positions and preserving intact the perfect crystal-lattice structure of silicon.
  • the first buried channels 11 a within the first region 2 a of the substrate 2 merge completely (or in a similar way, the silicon atoms migrate completely from the first columns 9 a ), and consequently a single buried cavity 12 is formed, having, for example, a square cross section of a side of 500 ⁇ m and a thickness of 0.5 ⁇ m, closed and totally insulated within the substrate 2 .
  • a thin layer of silicon having for example a thickness of approximately 5-10 ⁇ m, constituted in part by silicon atoms grown epitaxially and in part by silicon atoms that have migrated from the first columns 9 a .
  • a membrane 14 of monocrystalline silicon which is flexible, is suspended above the buried cavity 12 , and can deflect in the presence of external stresses. Instead, given the greater separation distance between the second columns 9 b in the second region 2 b of the substrate 2 , the silicon atoms do not migrate completely from the second columns 9 b , which thin out during the annealing process, but do not disappear.
  • the second buried channels 11 b which tend to move into a lower energy condition, assume an approximately circular cross section, without merging with one another.
  • connection trench 15 extending vertically (in a direction transverse to the top surface 1 a ) and having a depth and a dimension such as to reach the second buried channels 11 b .
  • the connection trench 15 extends along a closed line within the second region 2 b of the substrate 2 , externally with respect to the buried cavity 12 and to the membrane 14 , in particular at a given distance of separation I from the membrane 14 , comprised between 1 and 100 ⁇ m, preferably between 1 and 50 ⁇ m.
  • portions of the connection trench 15 extend at the distance of separation I on corresponding sides of the membrane 14 .
  • Oxygen is then supplied through the connection trench 15 during a thermal oxidation step ( FIG. 6 ) so as to oxidize completely the second columns 9 b , the portions of silicon surrounding the second buried channels 11 b and the buried cavity 12 , and partially the internal walls of the connection trench 15 .
  • a buried insulation region 16 is thus formed, which separates the membrane 14 electrically from the substrate 2 in a direction transverse to the top surface 1 a , and also a vertical insulation region 17 , which separates the membrane 14 electrically from the substrate 2 in a direction parallel to the top surface 1 a.
  • a layer of dielectric material for example TEOS (tetraethyl orthosilicate) oxide can be deposited on the wafer 1 so as to fill the opening to the connection trench 15 completely ( FIG. 7 ) with an insulating filling region 18 .
  • the dielectric material can fill also the second buried channels 11 b (either completely or partially), and form with the buried insulating region 16 a single uniform and compact electrical insulation structure.
  • voids may remain, without, however, this altering its properties of electrical insulation.
  • the substantial continuity of the buried insulation region 16 and of the vertical insulation region 17 ensures electrical and thermal insulation of the membrane 14 from the substrate 2 .
  • the vertical insulation region 17 is advantageously made at a distance from, and outside of, the membrane 14 so as to prevent reliability problems.
  • the mechanical stresses which could cause damage to, or even failure of, the microelectromechanical structure, are maximum.
  • the location of the insulation region far from the membrane 14 and from its anchorages to the substrate 2 enables prevention of the aforesaid reliability problems.
  • the layer of dielectric material can then be removed from the surface of the wafer, and further surface insulation structures (for example, of a LOCOS type) can be formed.
  • a thin passivation layer 19 is deposited on the top surface 1 a of the membrane 14 .
  • the manufacturing process then envisages formation of a first metal contact 20 and of a second metal contact 21 , for electrically contacting the membrane 14 and the substrate 2 , respectively.
  • the first metal contact 20 is set on the membrane 14 at a central portion thereof, and the second metal contact 21 is set on the back of the wafer 1 .
  • the first metal contact 20 can be arranged as a circular ring in a position external to the membrane 14 but inside the vertical insulation region 17
  • the second metal contact 21 can be set also on the front of the wafer, outside the vertical insulation region 17 .
  • the area external to the insulation structure can house a reading/control electronics, for example made with BCD processes with junction insulation (“top-bottom”), or with oxide insulation.
  • a second embodiment of the present disclosure envisages a different process for formation of the vertical insulation region; also in this case, process steps are carried out such that this region is set outside the membrane 14 , at a certain distance of separation I, so as to prevent any mechanical stresses therein.
  • the process envisages ( FIG. 8 ) formation of the buried cavity 12 within the substrate 2 and the membrane 14 , as described previously. It is to be noted that, in this case, the buried insulation region is not formed at the side of the cavity 12 (basically, just the first mask region 4 a is used for formation of the first columns 9 a at the first separation distance d 1 ). On the top surface 1 a of the wafer a resist layer is then formed, which is appropriately defined so as to form an etching mask 24 .
  • FIGS. 9 a - 9 c Next ( FIGS. 9 a - 9 c ), through the etching mask 24 , an external peripheral portion of the membrane 14 is etched, and a plurality of trenches 25 are opened, each of which extends through the membrane 14 and has a depth such as to reach the buried cavity 12 .
  • the trenches 25 are aligned at regular intervals parallel to external sides of the membrane 14 , throughout the perimeter of the membrane. Each trench 25 extends parallel to a respective external side of the membrane 14 .
  • Suspension bridges 26 are present between adjacent and consecutive trenches 25 ; suspension bridges 26 are made of silicon, connect the membrane 14 to the substrate 2 , and have the function of supporting the membrane above the buried cavity 12 , during the etching step.
  • the trenches 25 are again set at a regular distance along the external sides of the membrane 14 , but each trench 25 extends in a direction transverse to a respective one of the external sides.
  • the variant illustrated in FIG. 9 c envisages, instead, the presence of two series of trenches 25 , set inside one another, each series being formed by aligned trenches extending parallel to the external sides of the membrane 14 (in a similar way to what is illustrated in FIG. 9 a ).
  • a thermal oxidation of the trenches 25 is performed, which leads to formation of an oxide layer 27 on the internal walls of the trenches 25 and of the buried cavity 12 , and to complete oxidation of the suspension bridges 26 .
  • a vertical insulation region is thus formed, now designated by 17 ′, which surrounds the membrane 14 completely, insulating it electrically and thermally from the substrate 2 .
  • a filling region 28 for example of polysilicon, is introduced within the trenches 25 , for example using the CVD technique; the filling region 28 fills the trenches totally, and it also fills an external peripheral portion of the buried cavity 12 , consequently reducing the dimensions thereof. Accordingly, the dimensions of the membrane 14 , suspended above the buried cavity 12 , are also reduced.
  • the filling region 28 penetrates within the buried cavity 12 for a distance of approximately 1-50 ⁇ m. Introduction of the filling region 28 thus again enables mechanical decoupling of the membrane 14 from the vertical insulation region 17 ′, which in fact occupies a position at a certain distance of separation I from the membrane.
  • the resulting dimensions of the membrane 14 depend on the amount of polysilicon introduced, and hence on the extent of introduction of the filling region 28 within the buried cavity 12 .
  • the process described can be modified to obtain a differential pressure sensor 30 , illustrated schematically in FIG. 12 .
  • connection channel 31 is formed, buried within the substrate 2 , in a lateral position with respect to the buried cavity 12 and in fluid communication therewith.
  • process steps are performed that are substantially similar to the ones previously described (and for this reason are not described again), but starting from a first mask region 4 a that laterally has a rectangular projection of a shape corresponding to the one desired for the connection channel 31 .
  • an access trench 32 is dug by digging from the front of the wafer 1 ; this trench traverses a surface portion of the substrate and reaches the connection channel 31 . Digging to form the access trench 32 can also be performed from the back of the substrate 2 , with the disadvantage, however, of traversing a greater thickness of silicon.
  • the access trench 32 and the connection channel 31 it is possible to gain access to an internal wall of the buried cavity 12 . This enables detection of differential pressure in the case where a pressure is exerted both on the internal face and on the external face of the membrane 14 .
  • the second mask region 9 b has a conformation such as to surround, in contact, the first mask region 9 a (which also has a lateral projection in a position corresponding to the connection channel 31 ).
  • the process described affords numerous advantages.
  • it enables in a simple and inexpensive way a membrane of monocrystalline silicon to be obtained, integrated in a silicon substrate, suspended above a buried cavity, electrically and thermally insulated from the substrate from which it has been obtained.
  • vertical insulation regions are made far from the membrane and from its anchorages, separated by a distance sufficient to prevent mechanical stresses and the consequent risk of damage or failure.
  • the process does not envisage the use of SOI wafers or of complex techniques of surface micromachining, is extremely versatile and robust, easy to control, and of low cost.
  • the resulting structures (for example, the pressure sensor described) have small dimensions and are consequently suited for very small packages, for example LGA packages, which are compatible with “wafer-level” package techniques. Piezoresistive structures and/or structures sensitive to particular chemical compounds can moreover be easily integrated in the membrane.
  • the buried insulation region 16 can be confined to just the sensor (hence surrounding only the membrane 14 ), or else can extend throughout a silicon die, as far as the scribing lines in which cutting of the wafer 1 is performed.
  • the structure of the mask 4 and the shape of the deep trenches 8 a , 8 b and of the columns 9 a , 9 b can vary with respect to what is illustrated herein.
  • the mask 4 can have a structure complimentary to the one described previously, and consequently including a grid-shaped structure defining a plurality of openings of a polygonal shape, or else the same mask can be shaped like a grating to define openings having a striplike shape.
  • the same columns 9 a , 9 b can also have a different shape (for example, with hexagonal cross section).

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  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Bipolar Transistors (AREA)
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ITTO2007A000190 2007-03-14
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IT000190A ITTO20070190A1 (it) 2007-03-14 2007-03-14 Procedimento di fabbricazione di una membrana di materiale semiconduttore integrata in, ed isolata elettricamente da, un substrato

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