US9840786B2 - Film deposition device of metal film and film deposition method - Google Patents

Film deposition device of metal film and film deposition method Download PDF

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US9840786B2
US9840786B2 US14/910,365 US201414910365A US9840786B2 US 9840786 B2 US9840786 B2 US 9840786B2 US 201414910365 A US201414910365 A US 201414910365A US 9840786 B2 US9840786 B2 US 9840786B2
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positive electrode
metal
film deposition
solid electrolyte
electrolyte membrane
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US20160177464A1 (en
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Yuki Sato
Hiroshi Yanagimoto
Motoki Hiraoka
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Toyota Motor Corp
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Toyota Motor Corp
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/22—Electroplating combined with mechanical treatment during the deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/002—Cell separation, e.g. membranes, diaphragms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C25D17/14—Electrodes, e.g. composition, counter electrode for pad-plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating

Definitions

  • the invention relates to a film deposition device and a film deposition method of a metal film, in particular, a film deposition device and a film deposition method of a metal film, which can deposit a thin metal film uniformly on a surface of a base material.
  • a metal film is deposited on a surface of a base material.
  • a film deposition method of such a metal film a film deposition technique in which a metal film is deposited on a surface of a semiconductor base material such as Si by plating such as electroless plating or the like (see Japanese Patent Application Publication No. 2010-037622 (JP 2010-037622 A), for example) and a film deposition technique in which a metal film is deposited by a PVD method such as sputtering have been proposed.
  • a film deposition method of a metal film which uses a positive electrode, a negative electrode, a solid electrolyte membrane disposed between the positive electrode and negative electrode, and a power supply part that applies a voltage between the positive electrode and negative electrode is proposed (see JP 2012-219362 A, for example).
  • the solid electrolyte membrane is formed in such a manner that a solution containing a precursor of a solid electrolyte is spin coated on a surface of a base material in advance and cured, and metal ions to be coated on the solid electrolyte membrane are impregnated. Then, the solid electrolyte membrane is faced to the positive electrode and the base material is disposed so as to be electrically connected with the negative electrode. By applying a voltage between the positive electrode and negative electrode, the metal ions impregnated inside the solid electrolyte are precipitated on a negative electrode side thereby. Thus, a metal film made of metal of the metal ions can be deposited.
  • JP 2012-219362 A Japanese Patent Application Publication No. 2012-219362
  • a contact part contact surface between the solid electrolyte membrane and the base material
  • irregularities in contact pressure were generated.
  • a metal film is deposited in a state in which such irregularities of contact pressure were generated in a region where the metal film is deposited of a surface of the base material, there was a possibility of inducing irregularities in a film thickness of the metal film.
  • the present invention provides a film deposition device and a film deposition method of a metal film, which can deposit a metal film having a uniform film thickness.
  • a first aspect of the present invention relates to a film deposition device of a metal film, which includes: a solid electrolyte membrane that allows metal ions to be contained; a positive electrode made of a porous body; a power supply part that applies a voltage between the positive electrode and the base material; and a contact pressurization part that comes into contact with the positive electrode and uniformly pressurizes a film deposition region of a surface of the base material on which the metal film is deposited via the solid electrolyte membrane in contact with the positive electrode by the positive electrode.
  • the positive electrode made of the porous body is capable of transmitting a solution containing the metal ions such that the metal ions are supplied to the solid electrolyte membrane.
  • the power supply part applies a voltage between the positive electrode and the base material in a state in which the solid electrolyte membrane is disposed on a surface of the positive electrode between the positive electrode and the base material to be a negative electrode.
  • a voltage application metal is precipitated from the metal ions on a surface of the base material and the metal film made of the metal is deposited.
  • the solid electrolyte membrane is brought into contact with the base material.
  • a voltage is applied between the positive electrode and the base material to be a negative electrode by a power supply part, metal can be precipitated on a surface of the base material from metal ions contained inside of the solid electrolyte membrane thereby.
  • a metal film made of metal of the metal ions can be deposited on a surface of the base material.
  • the positive electrode is a porous body
  • the positive electrode made of the porous body can transmit a solution containing metal ions to the inside, and can supply the transmitted solution (of metal ions) to the solid electrolyte membrane.
  • the solution containing the metal ions can be supplied as needed via the positive electrode that is a porous body.
  • the solution containing supplied metal ions transmits the inside of the positive electrode, comes into contact with the solid electrolyte membrane adjacent to the positive electrode, and the metal ions are impregnated in the solid electrolyte membrane thereby.
  • the metal ions in the solid electrolyte membrane are precipitated and are supplied from the positive electrode side during film deposition.
  • a metal film having a desired film thickness can be continuously deposited on surfaces of a plurality of base materials.
  • a surface of the positive electrode that is, a surface of the positive electrode coincident with the film deposition region
  • a contact pressurization part a surface of the positive electrode (that is, a surface of the positive electrode coincident with the film deposition region) corresponding to a film deposition region on which a metal film is deposited of a surface of the base material
  • a contact pressurization part since the film deposition region of the base material can be uniformly pressurized by the solid electrolyte membrane, in a state in which the solid electrolyte membrane is made to uniformly fit a film deposition region of the base material, a metal film can be deposited on the base material.
  • a homogeneous metal film having a uniform film thickness with small variations can be deposited on a surface to be a film deposition region of the base material.
  • the film deposition device includes a metal ion supply part that houses the positive electrode and supplies a solution containing the metal ions to the positive electrode
  • the metal ion supply part includes a flow path that introduces the solution to the metal ion supply part, circulates the solution in the metal ion supply part and discharges the solution from the metal ion supply part
  • the contact pressurization part is disposed inside of the metal ion supply part
  • the positive electrode may be disposed in the metal ion supply part such that a flow path through which the solution passes is formed in the positive electrode as a part of the flow path.
  • the solution containing the metal ions introduced in the metal ion supply part is supplied to the positive electrode as needed. Therefore, even if the metal ions in the solid electrolyte membrane are consumed during film deposition, the metal ions can be continuously and stably supplied to the solid electrolyte membrane. Thus, the deposition speed of the metal film can be made higher.
  • a film deposition method of a metal film includes: sandwiching a solid electrolyte membrane with a positive electrode and a base material to be a negative electrode such that the solid electrolyte membrane comes into contact with the positive electrode and the base material; containing metal ions in the solid electrolyte membrane; and depositing a metal film made of the metal on a surface of the base material by applying a voltage between the positive electrode and the base material so that metal from metal ions contained inside the solid electrolyte membrane is precipitated on a surface of the base material.
  • the positive electrode a porous body that is capable of transmitting a solution containing the metal ions is used such that the metal ions are supplied to the solid electrolyte membrane.
  • the positive electrode uniformly pressurizes a film deposition region of a surface of the base material on which the metal film is deposited via the solid electrolyte membrane.
  • the solid electrolyte membrane may be brought into contact with the base material.
  • the solid electrolyte membrane is disposed on a surface of the positive electrode, and the solid electrolyte membrane is brought into contact with the base material.
  • metal is precipitated on a surface of the base material from metal ions contained inside of the solid electrolyte membrane, and a metal film can be deposited on a surface of the base material thereby.
  • a solution containing the metal ions can be transmitted to the inside of the porous body, and the transmitted solution can be supplied to the solid electrolyte membrane.
  • a solution containing metal ions can be supplied as needed via the positive electrode that is a porous body.
  • a supplied solution containing the metal ions transmits the inside of the positive electrode and comes into contact with the solid electrolyte membrane adjacent to the positive electrode, and the metal ions are impregnated in the solid electrolyte membrane thereby.
  • the metal ions in the solid electrolyte membrane are precipitated and are supplied from the positive electrode side during film deposition.
  • a metal film having a desired film thickness can be continuously deposited on surfaces of a plurality of base materials.
  • a surface of the positive electrode corresponding to a film deposition region of a surface of the base material on which a metal film is deposited is pressurized against the base material, and the film deposition region of the base material can be uniformly pressurized by the solid electrolyte membrane.
  • a metal film can be deposited on the base material.
  • a homogeneous metal film having a uniform film thickness with small variations can be deposited on a surface to be a film deposition region of the base material.
  • the solution containing the metal ions may be intermittently supplied to the positive electrode to deposit a metal film. While making the solution containing the metal ions pass to the inside of the positive electrode, the metal film may be deposited.
  • the solution containing the metal ions In order to flow the solution containing the metal ions to the inside of the positive electrode that is a porous body, the solution containing the metal ions, which was introduced to the metal ion supply part, is supplied to the positive electrode as needed. Therefore, even if the metal ions in the solid electrolyte membrane are consumed during film deposition, the metal ions can be continuously and stably supplied to the solid electrolyte membrane. Thus, the deposition speed of the metal film can be improved.
  • a metal film of which film thickness is suppressed from varying can be deposited.
  • FIG. 1 is a schematic conceptual view of a film deposition device of a metal film according to a first embodiment of the present invention
  • FIG. 2A is a schematic cross-sectional view for describing a film deposition method according to a film deposition device of a metal film shown in FIG. 1 and a state during film deposition by the film deposition device;
  • FIG. 2B is a schematic plan view for describing a positional relationship between a surface (region) against which a positive electrode shown in FIG. 2A is pressurized and a film deposition region of a base material;
  • FIG. 3A is a schematic cross-sectional view that shows a state before film deposition by the film deposition device of a metal film according to a second embodiment of the present invention
  • FIG. 3B is a schematic plan view for describing a state during film deposition by the film deposition device shown in FIG. 3A ;
  • FIG. 3C is a schematic plan view for describing a positional relationship between the surface (region) against which the positive electrode shown in FIG. 3A is pressurized and the film deposition region of the base material and a flow of a metal ion solution;
  • FIG. 4A is a schematic conceptual view showing a film deposition device of a metal film according to a comparative example
  • FIG. 4B is a schematic plan view for describing a positional relationship between a surface (region) against which a positive electrode shown in FIG. 4A is pressurized and a film deposition region of a base material;
  • FIG. 5A is a diagram that shows measurement results of film thicknesses of metal films deposited according to film deposition methods of example 1 and comparative example 1;
  • FIG. 5B is a diagram that shows variations of the film thicknesses of the metal films deposited by the film deposition methods according to example 1 and comparative example 1;
  • FIG. 6 is a diagram that shows results of deposition speeds when films were deposited by the film deposition methods according to example 2 and comparative example 2.
  • a film deposition device 1 A precipitates metal from metal ions and deposits a metal film made of precipitated metal on a surface of a base material B.
  • a base material B a base material made of a metal material such as aluminum, or a base material obtained by forming a metal underlayer on a treatment surface of a resin or a silicon base material is used.
  • the film deposition device 1 A includes at least a metallic positive electrode 11 , a solid electrolyte membrane 13 disposed on a surface of the positive electrode 11 between the positive electrode 11 and the base material B to be a negative electrode, and a power supply part 14 that applies a voltage between the positive electrode 11 and the base material B.
  • the film deposition device 1 A includes a contact pressurization part 20 that is in contact with the positive electrode 11 and pressurizes a surface of the base material B by the solid electrolyte membrane 13 via the positive electrode 11 during film deposition.
  • the contact pressurization part 20 pressurizes a surface of the positive electrode 11 corresponding to a film deposition region fr such that the film deposition region fr on which a metal film F is deposited of a surface bf of the base material B is uniformly pressurized during film deposition.
  • the film deposition region fr is a flat surface.
  • a surface of the solid electrolyte membrane 13 that faces the film deposition region fr is a flat surface.
  • the film deposition region fr region hatched in FIG. 2B
  • the film deposition region fr region hatched in FIG. 2B
  • the contact pressurization part 20 pressurizes the positive electrode 11 .
  • the positive electrode 11 and the contact pressurization part 20 which are described above, are housed in a frame body 15 . More specifically, in a bottom of the frame body 15 , an opening is formed, the positive electrode 11 is housed in a state in which the positive electrode 11 is engaged with an inner wall in an internal space of the frame body 15 , and the solid electrolyte membrane 13 is installed to the frame body 15 such that it comes into contact with the positive electrode 11 and covers the opening of the frame body 15 .
  • the positive electrode 11 has a lower surface corresponding to a size of the film deposition region fr of the base material B, and above the positive electrode 11 , the contact pressurization part 20 is disposed so as to coincide with an upper surface of the positive electrode 11 .
  • the contact pressurization part 20 pressurizes an entire surface of the upper surface of the positive electrode 11 by a pressurization means 16 described below and can uniformly pressurize a whole region of the film deposition region fr via the solid electrolyte membrane 13 by a lower surface of the positive electrode 11 .
  • a cap part 15 a above the frame body 15 is removed and the contact pressurization part 20 may be housed in the frame body 15 . That is, as long as a positional relationship between the contact pressurization part 20 and the positive electrode 11 , which were described above can be satisfied, a structure of the frame body 15 is not particularly limited. Further, the contact pressurization part 20 is not particularly limited in a shape thereof as long as it can uniformly pressurize the positive electrode 11 .
  • the contact pressurization part 20 may be made of a metal material, in this case, since the contact pressurization part 20 and the positive electrode 11 are in direct contact and are electrically connected, the positive electrode 11 and the contact pressurization part 20 can be electrically connected to the power supply part 14 .
  • the positive electrode 11 is made of a porous body that transmits a metal ion solution L and supplies metal, ions to the solid electrolyte membrane 13 .
  • a porous body as long as it has (1) corrosion resistance against the metal ion solution L, (2) the electric conductivity capable of operating as a positive electrode, (3) permeability of the metal ion solution L, and (4) capability of pressurizing via the contact pressurization part 20 by a pressurization means 16 described below, it is not particularly limited.
  • a foamed metal body made of a foam having continuous open cells, which has an ionization tendency lower than plating metal ion (or higher in an electrode potential), such as foamed titanium can be used.
  • the condition of (3) described above is preferable to be the porosity of about 50 to 90% by volume, a pore diameter of about 50 to 600 ⁇ m, and a thickness of about 0.1 to 50 mm when a foamed metal body is used, for example.
  • a solution containing metal ions (hereinafter, referred to as a metal ion solution) L is supplied to the positive electrode 11 .
  • a metal ion solution L As described below, since the positive electrode 11 is made of a porous body, the metal ion solution L can be held inside thereof.
  • the pressurization means 16 is connected to the cap part 15 a of the frame body 15 .
  • the pressurization means 16 pressurizes the positive electrode 11 via the pressurization part 20 described above when the positive electrode 11 is moved toward the base material B, and the solid electrolyte membrane 13 is pressurized against the film deposition region fr of the base material B thereby.
  • a hydraulic or air cylinder and so on can be used as the pressurization means 16 .
  • the film deposition device 1 A includes a pedestal 21 that fixes the base material B and adjusts alignment of the base material B with respect to the positive electrode 11 , and the pedestal 21 includes also a temperature adjustment mechanism that adjusts a temperature of the base material B.
  • an aqueous solution that contains ions of, for example, copper, nickel, silver or the like can be used.
  • a solution containing copper sulfate, copper pyrophosphate or the like can be used.
  • the solid electrolyte membrane 13 a membrane, a film or the like made of a solid electrolyte can be used.
  • the solid electrolyte membrane 13 is not particularly limited as long as, when brought into contact with the metal ion solution L described above, the metal ions can be impregnated inside thereof, and, when a voltage is applied, metal derived from the metal ions can be precipitated on a surface of the base material B.
  • a fluororesin such as Nafion (registered trade mark) manufactured by DuPont, a hydrocarbon resin, a polyamic acid resin, or a resin having an ion exchange function such as SELEMION (CMV, CMD, CMF series) manufactured by ASAHI GLASS Co., Ltd. can be used.
  • the base material B is disposed, alignment of the base material B is adjusted with respect to the positive electrode 11 , and a temperature of the base material B is adjusted.
  • the solid electrolyte membrane 13 is disposed on a surface of the positive electrode 11 that is made of a porous body, the solid electrolyte membrane 13 is brought into contact with the base material B.
  • the pressurization means 16 the positive electrode 11 is moved toward the base material B, and the film deposition region fr of the base material B is pressurized by the solid electrolyte membrane 13 thereby.
  • the film deposition region fr on which a metal film F is deposited of a surface of the base material B can be uniformly pressurized by the contact pressurization part 20 .
  • the solid electrolyte membrane 13 can be made to uniformly fit a surface of the base material B of the film deposition region fr.
  • the power supply part 14 is used to apply a voltage between the positive electrode 11 and the base material B to be a negative electrode, and metal is precipitated from the metal ions contained inside of the solid electrolyte membrane 13 on a surface of the base material B thereby.
  • the metal ion solution L is held inside of the positive electrode 11 , while supplying the metal ion solution L on a surface on the solid electrolyte membrane 13 side from the inside of the positive electrode 11 , a metal film F can be deposited.
  • the metal ion solution L can be transmitted from the inside thereof to the solid electrolyte membrane 13 side, and the transmitted metal ion solution L can be supplied to the solid electrolyte membrane 13 together with the metal ions.
  • the metal ion solution L inside of the positive electrode 11 that is a porous body can be supplied.
  • the supplied metal ion solution L comes into contact with the solid electrolyte membrane 13 adjacent to the positive electrode 11 , and the metal ions are impregnated in the solid electrolyte membrane 13 .
  • a metal film F can be deposited on a surface of the base material B.
  • the metal ion solution L in the positive electrode 11 that is a porous body can be supplied like this, without limiting an amount of metal that can be precipitated, a metal film F having a desired film thickness can be continuously deposited on surfaces of a plurality of base materials B.
  • the film deposition region fr of the base material B can be uniformly pressurized with the solid electrolyte membrane 13 by the contact pressurization part 20 , in a state in which the solid electrolyte membrane 13 is made to fit the film deposition region fr of the base material B, a metal film can be deposited on a base material B.
  • a homogeneous metal film having a uniform film thickness with small variations can be deposited on a surface to be a film deposition region fr of the base material B.
  • a different point of a film deposition device 1 B according to a second embodiment shown in FIG. 3A from a film deposition device 1 A according to the first embodiment is in that a function of supplying a metal ion solution to the positive electrode 11 was imparted to the frame body 15 shown in first embodiment. That is, according to the present embodiment, a frame body that houses the positive electrode 11 becomes a metal ion supply part 15 B for supplying the metal ion solution to the positive electrode 11 .
  • a flow path 15 e that introduces the metal ion solution L in the metal ion supply part 15 B, supplies the metal ion solution L into the metal ion supply part 15 B, and discharges the metal ion solution L is formed.
  • the contact pressurization part 20 is disposed in the metal ion supply part 15 B such that a flow path 15 c through which the metal ion solution L passes is formed in the positive electrode 11 as a part of a flow path 15 b.
  • a flow path 15 d that guides the metal ion solution L into the positive electrode 11 and a flow path 15 e that discharges the metal ion solution L from the positive electrode 11 are formed.
  • a flow path through which the metal ion solution L flows is formed in the porous positive electrode 11 between the contact pressurization part 20 and the solid electrolyte membrane 13 .
  • dashed line arrow marks of FIG. 3C to an entire surface of the positive electrode 11 , the metal ion solution L can be flowed.
  • a solution tank (not shown) in which the metal ion solution L is housed is connected to one side of the metal ion supply part 15 B via a pumping device (a device that pumps the metal ion solution L to a flow path of the metal ion supply part) 18 such as a pump for transferring a solution and a supply tube, and, on the other side thereof, an waste liquid tank (not shown) that recovers the used waste liquid is connected via an waste liquid tube.
  • a pumping device a device that pumps the metal ion solution L to a flow path of the metal ion supply part
  • an waste liquid tank not shown
  • the metal ion solution L housed in the solution tank can be forcibly supplied by the pumping device 18 to the flow path 15 b of the metal ion supply part and the positive electrode 11 via the supply tube and the used waste liquid can be transferred to the waste liquid tank via the waste liquid tube.
  • the metal ion solution L introduced in the metal ion supply part 15 B can be forcibly supplied (flowed) as needed over an entire surface of the positive electrode 11 .
  • the metal ions in the solid electrolyte membrane 13 are consumed during film deposition, the metal ions can be continuously and stably supplied to the solid electrolyte membrane 13 . Therefore, a film deposition speed of the metal film F can be increased.
  • a metal film was deposited.
  • a pure aluminum base material 50 mm ⁇ 50 mm ⁇ thickness 1 mm, an area of a film deposition region: 30 mm ⁇ 30 mm
  • a gold plating film was formed on a surface of the nickel plating film.
  • a positive electrode coated with platinum plating at a thickness of 3 ⁇ m on a surface for film deposition that corresponds to a film deposition region was used on a surface of a porous body (manufactured by Mitsubishi Material Corporation) that is made of a 30 mm ⁇ 30 mm ⁇ 0.5 mm foamed titanium.
  • an electrolyte membrane having a film thickness of 183 ⁇ m (Nafion N117, manufactured by DuPont) was used.
  • Example 1 in the same manner as Example 1, a metal film was deposited.
  • a different point from Example 1 is that like a deposition device 9 shown in FIGS. 4A and 4B , 9 contact pressurization parts that come into partial contact with a surface 20 a of the positive electrode and pressurize this were used.
  • a pressurization area of each of the contact pressurization parts was 5 mm ⁇ 5 mm and these were arranged at equidistance in 3 rows ⁇ 3 columns.
  • film thicknesses of deposited films were measured, and, in what follows, variations in film thicknesses on a thicker side and a thinner side were calculated. These results are shown in Table 1 and FIG. 5 .
  • Example 1 Measured film thickness 4.95 12.26 ( ⁇ m) 5.16 12.04 4.73 12.47 4.52 12.47 1.95 9.46 1.73 10.54 Film thickness variation on 34 8 thicker side (%) Film thickness variation on 55 18 thinner side (%)
  • Example 2 In the same manner as Example 1, a metal film was deposited. A film deposition speed of the metal film when deposited with the film deposition device of Example 2 was measured. Results thereof are shown in the following Table 2 and FIG. 6 .
  • Example 2 In the same manner as Example 2, a metal film was deposited. A point different from Example 2 is that by using 9 contact pressurization parts that come into partial contact with a surface of the positive electrode and pressurize this like the film deposition device 9 shown in FIGS. 4A and 4B , a film deposition device in which a flow path through which the metal ion solution passes into the positive electrode as a part of the flow path is not formed was used to deposit the metal film. That is, in Comparative Example 2, without passing a solution containing metal ions to the inside of the positive electrode, a film was deposited. A film deposition speed of the metal film when deposited with the film deposition device of Example 2 was measured. Results thereof are shown in the following Table 2 and FIG. 6 .

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
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US14/910,365 2013-08-07 2014-08-04 Film deposition device of metal film and film deposition method Active 2034-08-09 US9840786B2 (en)

Applications Claiming Priority (3)

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JP2013-163815 2013-08-07
JP2013163815A JP5915602B2 (ja) 2013-08-07 2013-08-07 金属皮膜の成膜装置および成膜方法
PCT/IB2014/001454 WO2015019152A2 (fr) 2013-08-07 2014-08-04 Dispositif de dépôt de film de film métallique et procédé de dépôt de film

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US9840786B2 true US9840786B2 (en) 2017-12-12

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Publication number Priority date Publication date Assignee Title
US20160194777A1 (en) * 2013-08-07 2016-07-07 Toyota Jidosha Kabushiki Kaisha Film deposition device of metal film and metal film deposition method

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JP6794723B2 (ja) * 2016-09-02 2020-12-02 トヨタ自動車株式会社 金属被膜の成膜方法
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JP7643358B2 (ja) * 2022-01-19 2025-03-11 トヨタ自動車株式会社 金属皮膜の成膜装置

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326930A (en) 1978-04-14 1982-04-27 Bbc Brown, Boveri & Company, Limited Method for electrolytic deposition of metals
JPH01165786A (ja) 1987-12-22 1989-06-29 Hitachi Cable Ltd 固相めっき方法
JPH0570986A (ja) 1991-09-13 1993-03-23 Nec Corp 電解銅めつき法および電解銅めつき装置
JPH05148681A (ja) * 1992-05-29 1993-06-15 Hitachi Cable Ltd 固相めつき方法
JPH10121282A (ja) 1996-10-15 1998-05-12 Japan Energy Corp 水電解用固体高分子電解質およびその製造法
US6277261B1 (en) 1998-05-08 2001-08-21 Forschungszentrum Jülich GmbH Method of producing electrolyte units by electrolytic deposition of a catalyst
JP2002004091A (ja) 2000-04-21 2002-01-09 Ebara Corp 電解処理装置及びその電場状態制御方法
JP2004353014A (ja) 2003-05-27 2004-12-16 Ebara Corp めっき装置及びめっき方法
JP2005133187A (ja) 2003-10-31 2005-05-26 Ebara Corp めっき装置及びめっき方法
WO2006067337A2 (fr) 2004-12-20 2006-06-29 Compagnie Europeenne Des Technologies De L'hydrogene (Ceth) Procede d’electrodeposition d'un metal pour l'obtention de cellules a electrodes-electrolyte polymere solide
US20060199270A1 (en) 2005-03-04 2006-09-07 Parnas Richard S Optical fiber based fluorescence sensor for in-situ measurement and control of fuel cells
JP2008097868A (ja) 2006-10-06 2008-04-24 Japan Atomic Energy Agency シラン架橋構造を付与した燃料電池用高分子電解質膜及びそれを含む燃料電池用電極接合体
US20080217182A1 (en) 2007-03-08 2008-09-11 E. I. Dupont De Nemours And Company Electroplating process
JP2010037622A (ja) 2008-08-07 2010-02-18 Nippon Mining & Metals Co Ltd 無電解置換めっきにより銅薄膜を形成しためっき物
JP2011011493A (ja) 2009-07-03 2011-01-20 Nippon Steel Chem Co Ltd 透明導電性膜積層体の製造方法
US7998323B1 (en) 2006-06-07 2011-08-16 Actus Potentia, Inc. Apparatus for focused electric-field imprinting for micron and sub-micron patterns on wavy or planar surfaces
JP2012219362A (ja) 2011-04-13 2012-11-12 Toyota Motor Corp 固体電解質膜を用いた金属膜形成方法
US20140224662A1 (en) * 2012-01-12 2014-08-14 Oceanit Laboratories, Inc. Solid electrolyte/electrode assembly for electrochemical surface finishing applications
US20150014178A1 (en) * 2012-02-23 2015-01-15 Toyota Jidosha Kabushiki Kaisha Film formation device and film formation method for forming metal film

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326930A (en) 1978-04-14 1982-04-27 Bbc Brown, Boveri & Company, Limited Method for electrolytic deposition of metals
JPH01165786A (ja) 1987-12-22 1989-06-29 Hitachi Cable Ltd 固相めっき方法
JPH0570986A (ja) 1991-09-13 1993-03-23 Nec Corp 電解銅めつき法および電解銅めつき装置
JPH05148681A (ja) * 1992-05-29 1993-06-15 Hitachi Cable Ltd 固相めつき方法
JPH10121282A (ja) 1996-10-15 1998-05-12 Japan Energy Corp 水電解用固体高分子電解質およびその製造法
US6277261B1 (en) 1998-05-08 2001-08-21 Forschungszentrum Jülich GmbH Method of producing electrolyte units by electrolytic deposition of a catalyst
JP2002004091A (ja) 2000-04-21 2002-01-09 Ebara Corp 電解処理装置及びその電場状態制御方法
JP2004353014A (ja) 2003-05-27 2004-12-16 Ebara Corp めっき装置及びめっき方法
JP2005133187A (ja) 2003-10-31 2005-05-26 Ebara Corp めっき装置及びめっき方法
WO2006067337A2 (fr) 2004-12-20 2006-06-29 Compagnie Europeenne Des Technologies De L'hydrogene (Ceth) Procede d’electrodeposition d'un metal pour l'obtention de cellules a electrodes-electrolyte polymere solide
US20060199270A1 (en) 2005-03-04 2006-09-07 Parnas Richard S Optical fiber based fluorescence sensor for in-situ measurement and control of fuel cells
US7998323B1 (en) 2006-06-07 2011-08-16 Actus Potentia, Inc. Apparatus for focused electric-field imprinting for micron and sub-micron patterns on wavy or planar surfaces
JP2008097868A (ja) 2006-10-06 2008-04-24 Japan Atomic Energy Agency シラン架橋構造を付与した燃料電池用高分子電解質膜及びそれを含む燃料電池用電極接合体
US20100040927A1 (en) 2006-10-06 2010-02-18 Masaru Yoshida Silane crosslinked structure-introduced fuel-cell polymer electrolyte membrane and fuel-cell electrode assembly having the same
US20080217182A1 (en) 2007-03-08 2008-09-11 E. I. Dupont De Nemours And Company Electroplating process
JP2010037622A (ja) 2008-08-07 2010-02-18 Nippon Mining & Metals Co Ltd 無電解置換めっきにより銅薄膜を形成しためっき物
JP2011011493A (ja) 2009-07-03 2011-01-20 Nippon Steel Chem Co Ltd 透明導電性膜積層体の製造方法
JP2012219362A (ja) 2011-04-13 2012-11-12 Toyota Motor Corp 固体電解質膜を用いた金属膜形成方法
US20140224662A1 (en) * 2012-01-12 2014-08-14 Oceanit Laboratories, Inc. Solid electrolyte/electrode assembly for electrochemical surface finishing applications
US20150014178A1 (en) * 2012-02-23 2015-01-15 Toyota Jidosha Kabushiki Kaisha Film formation device and film formation method for forming metal film

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
A Restriction Requirement dated May 16, 2017, which issued by the USPTO in U.S. Appl. No. 14/910,416.
An Office Action dated Sep. 1, 2017, which issued during the prosecution of U.S. Appl. No. 14/910,416.
Database WPI Week 198932 Thomson Scientific, London, GB; AN 1989-231016 XP002735308.
DATABASE WPI Week 198932, 29 June 1989 Derwent World Patents Index; XP002735308, ONDA M: "Solid phase plating - by contacting solid electrolyte with object and applying voltage between anode connected to electrolyte and cathode connected to object"
International Search Report for International Application No. PCT/1132014/001454 dated Feb. 17, 2015.
International Search Report, issued by International Searching Authority in corresponding International Application No. PCT/IB2014/001459, dated Feb. 9, 2015.
Partial Translation of Office Action dated Nov. 18, 2015 in corresponding JP Application No. 2013-163815.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160194777A1 (en) * 2013-08-07 2016-07-07 Toyota Jidosha Kabushiki Kaisha Film deposition device of metal film and metal film deposition method
US10920331B2 (en) * 2013-08-07 2021-02-16 Toyota Jidosha Kabushiki Kaisha Film deposition device of metal film and metal film deposition method

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