WO1987006029A3 - Procede de transfert de configurations pour fabriquer des dispositifs a circuits integres - Google Patents

Procede de transfert de configurations pour fabriquer des dispositifs a circuits integres Download PDF

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Publication number
WO1987006029A3
WO1987006029A3 PCT/US1987/000512 US8700512W WO8706029A3 WO 1987006029 A3 WO1987006029 A3 WO 1987006029A3 US 8700512 W US8700512 W US 8700512W WO 8706029 A3 WO8706029 A3 WO 8706029A3
Authority
WO
WIPO (PCT)
Prior art keywords
pbs
transfer process
layer
circuit devices
pattern transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1987/000512
Other languages
English (en)
Other versions
WO1987006029A2 (fr
Inventor
William Michael Mansfield
Sheila Vaidya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Priority to KR1019870701080A priority Critical patent/KR880701400A/ko
Publication of WO1987006029A2 publication Critical patent/WO1987006029A2/fr
Publication of WO1987006029A3 publication Critical patent/WO1987006029A3/fr
Anticipated expiration legal-status Critical
Priority to SG1232/92A priority patent/SG123292G/en
Priority to HK100193A priority patent/HK100193A/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

Les vernis photosensibles existants à haute résolution et à haute sensibilité aux faisceaux d'électrons, tels que le poly(buthène-1-sulfone) (BBS) se caractérisent par une résistance médiocre à la gravure à sec. De tels vernis photosensibles ne sont par conséquent pas indiqués pour être utilisés dans des procédés standard de vernis à trois niveaux, qui sont essentiels pour la lithographie submicronique. Est décrite une couche très mince (24) d'un métal pouvant être gravé par voie humide, laquelle couche remplace le dioxyde de silicium dans la structure classique à trois niveaux. Le PBS présentant une bonne robustesse à la gravure par voie humide, les configurations dans le PBS peuvent être transférées dans la couche de métal très mince sans altérer notablement la qualité des bords de ligne. La couche métallique fait alors office de masque robuste pour graver à sec la configuration dans la couche (22) sous-jacente conférant la planéité.
PCT/US1987/000512 1986-03-24 1987-03-04 Procede de transfert de configurations pour fabriquer des dispositifs a circuits integres Ceased WO1987006029A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019870701080A KR880701400A (ko) 1986-03-24 1987-03-04 집적 회로 장치의 제조방법
SG1232/92A SG123292G (en) 1986-03-24 1992-12-09 Pattern transfer process for fabricating integrated-circuit devices
HK100193A HK100193A (en) 1986-03-24 1993-09-23 Pattern transfer process for fabricating integrated-circuit devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US84324286A 1986-03-24 1986-03-24
US843,242 1995-06-07

Publications (2)

Publication Number Publication Date
WO1987006029A2 WO1987006029A2 (fr) 1987-10-08
WO1987006029A3 true WO1987006029A3 (fr) 1988-03-24

Family

ID=25289430

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1987/000512 Ceased WO1987006029A2 (fr) 1986-03-24 1987-03-04 Procede de transfert de configurations pour fabriquer des dispositifs a circuits integres

Country Status (6)

Country Link
EP (1) EP0268595B1 (fr)
JP (1) JPS63502936A (fr)
KR (1) KR880701400A (fr)
ES (1) ES2004266A6 (fr)
SG (1) SG123292G (fr)
WO (1) WO1987006029A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0410635A1 (fr) * 1989-07-28 1991-01-30 AT&T Corp. Méthode de gravure d'une fenêtre à profil conique dans la fabrication de composants de circuits intégrés à semiconducteurs
WO1996007954A1 (fr) * 1994-09-09 1996-03-14 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Microstructures et procede de fabrication de microstructures

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
US4362598A (en) * 1981-10-26 1982-12-07 General Electric Company Method of patterning a thick resist layer of polymeric plastic
EP0100736A2 (fr) * 1982-08-02 1984-02-15 Fairchild Semiconductor Corporation Structure et traitement de gaufres par le procédé de "lift-off"

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US436259A (en) * 1890-09-09 Fastening for slatted furniture
GB1421805A (en) * 1972-11-13 1976-01-21 Ibm Method of forming a positive resist
JPS5811786A (ja) * 1981-07-16 1983-01-22 Matsushita Electric Ind Co Ltd 薄膜の微細加工法
JPS6011243A (ja) * 1983-06-29 1985-01-21 Fujitsu Ltd 光フアイバ母材製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4244799A (en) * 1978-09-11 1981-01-13 Bell Telephone Laboratories, Incorporated Fabrication of integrated circuits utilizing thick high-resolution patterns
US4362598A (en) * 1981-10-26 1982-12-07 General Electric Company Method of patterning a thick resist layer of polymeric plastic
EP0100736A2 (fr) * 1982-08-02 1984-02-15 Fairchild Semiconductor Corporation Structure et traitement de gaufres par le procédé de "lift-off"

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
International Electron Devices Meeting, (Washington, D.C., US), 8-10 December 1980, R.K. WATTS et al.: "Electron Beam Lithography for Small MOSFETs", pages 772-775 see figure 2; page 772, left-hand column, line 9 from bottom - page 772, right-hand column, line 1 *
PATENT ABSTRACTS OF JAPAN, Volume 7, No. 83 (C-160)(1223), 7 April 1983, see the whole documents & JP, A, 5811786 (Matsushita Denki Sangyo K.K.) 22 January 1983 *
PATENT ABSTRACTS OF JAPAN, Volume 9, No. 262 (P-398)(1985), 19 October 1985, see the whole document, & JP, A, 60111243 (Nippon Denshin Denwa Kosha) 17 June 1985 *
VLSI Electronics: Microstructure Science, Volume 8, 1984, Academic Press, Inc., J.B. KRUGER et al.: "Trilayer Resist", pages 91-136, chapter 5, see page 108, section IV.A.2. "E-Beam Lithographyy; page 112, section IV.B.3. "Etching of the Transfer Layer"; page 117, Section IV.C.4. "Etching of the Base Layer" *

Also Published As

Publication number Publication date
JPS63502936A (ja) 1988-10-27
WO1987006029A2 (fr) 1987-10-08
ES2004266A6 (es) 1988-12-16
SG123292G (en) 1993-02-19
EP0268595B1 (fr) 1992-06-10
KR880701400A (ko) 1988-07-26
EP0268595A1 (fr) 1988-06-01

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