WO1995013638A1 - Dispositif laser hybride a semi-conducteurs a cavite externe couplee - Google Patents

Dispositif laser hybride a semi-conducteurs a cavite externe couplee Download PDF

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Publication number
WO1995013638A1
WO1995013638A1 PCT/EP1993/003115 EP9303115W WO9513638A1 WO 1995013638 A1 WO1995013638 A1 WO 1995013638A1 EP 9303115 W EP9303115 W EP 9303115W WO 9513638 A1 WO9513638 A1 WO 9513638A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor laser
laser device
support structure
common support
adjustable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP1993/003115
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English (en)
Inventor
Roland Germann
Stefan Hausser
Peter Vettiger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
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International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to PCT/EP1993/003115 priority Critical patent/WO1995013638A1/fr
Publication of WO1995013638A1 publication Critical patent/WO1995013638A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Definitions

  • the present invention relates to semiconductor laser devices comprising a coupled external cavity. Proposed is a new and improved laser device with a stable wavelength which can be selected or changed at will according to intended use. Such use might be in fields like optical computing, optical communication, optical data transmission, optical measuring. Specifically, future high capacity optical data transmission networks using wavelength division multiplexing need light sources and receivers, whose wavelengths can be adjusted to one another and/or rapidly switched between different predetermined wavelengths. These applications are described e.g. in US 5 1 15 444 or US 5 191 625.
  • Tunable semiconductor laser light sources of different types are already known, including multi-section distributed bragg-reflector lasers, as described e.g. in US 4 995 048, and external coupled cavity diode lasers, which may be found in WO 90/13161 , US 5 023 885, or US 5 191 625. These are difficult to tune, since for tuning, one or more than a single parameter must be changed non linearly or interrelated.
  • An external coupled cavity laser has been realized as a hybrid device using a micropositionable mirror.
  • Such a device is illustrated in IEEE J. Quant. Electronics, vol. QE-20, no.3, 3-1984, pages 223-229, J.P. van der Ziel et al., but the device shown there is big and difficult to integrate in optoelectronic systems.
  • Diode lasers using an external coupled cavity for mode-stabilization are also known; their fabrication in a single monolithic structure is proposed in US 4 726 030 to simplify efficient batch processing. Further, US 5 115 444 describes in one embodiment a monolithic device which allows switching between different external coupled cavities.
  • External coupled cavity diode laser devices might function as light sources and/or detectors, as described e.g. in US 4 864 585 or US 4 803 695, including amplification of incoming light signals, useful in network nodes of optical communication systems, as known from US 5 191 625.
  • Micromechanically fabricated optical banks, mounts, or other support structures are already known for building hybrid optoelectronic microsystems with alignment aids, e.g. V-grooves or notches, and integrated electronic circuits. They allow integration of electrooptical components and electrostatic or other variation of their positions. Such optical banks may be found in WO 91/2392.
  • Such hybrid external coupled cavity semiconductor laser devices may be used as light sources and/or detectors in optical systems.
  • transmitters and/or receivers can also be used as transmitters and/or receivers for wavelength division multiplexing communication systems, e.g. for high capacity optical data transmission networks.
  • the above objects have been accomplished by integrating, in a common support structure, an adjustable part of an external coupled cavity. Coupled to a conventional semiconductor laser, the external cavity is adjustable at will and acts as a longitudinal mode filter for switching or tuning the wavelength accordingly.
  • such a hybrid external coupled cavity laser device may be miniaturized and easily integrated in various optoelectronic systems. It may be fast and easily tuned or switched, e.g. with a linear transfer function, over a broad range of wavelengths.
  • Using micromachining for integration greatly simplifies the fabrication process and allows integration of other electronic, optic, fluidic or mechanic elements, or further miniaturization. Additional aspects of this invention may contribute to further improved hybrid external coupled cavity semiconductor laser devices or to improved applicability or producability of such devices. They can be useful alone or in combination depending on the intended use.
  • the adjustable part of the external coupled cavity can be formed in a single, in particular monolithic, support structure together with the common support structure.
  • the adjustable part can also support a mirror and/or a light detector.
  • Other adjustable parts may be useful to additionally adjust the external coupled cavity independently or for stabilizing the wavelength.
  • the adjustable part can be micropositioned, e.g. electrostatically by applying a voltage to it with respect to the support structure.
  • Other micropositioning methods e.g. thermo- or magneto-mechanic, hydraulic, or piezoelectric, may be used depending on the application.
  • the common support structure and/or the adjustable part of the external coupled cavity can be formed by micromachining.
  • the support structure may comprise alignment aids, e.g. notches or V-grooves for supporting and aligning optical fibres that carry light to or from the device, or other optical elements. It may also comprise integrated optical or electronic elements.
  • the support structure may provide the anyhow necessary submount of the semiconductor laser, or a separate submount may be used.
  • the support structure forms a support for a plurality, e.g. an array of such semiconductor laser devices of equal or different types.
  • Semiconductor lasers of different types could be used, e.g. surface- or edge-emitting, mounted junction side up or juction side down, even directly grown on the support structure, with or without integrated deflectors, microlasers and others, which are subsumed as "conventional" semiconductor lasers, even if they are of very recent or yet unknown types. Certain other solid state microlasers might be useful, too.
  • Such lasers may be of the types described in IEEE Photonics Technology Letters, vol.4, no.7, 7-1992, pages 698-700, F.R.Gfeller et al. ; in Scientific American, 1 1-1991 , pages 56-62, J.L. Jewell et al.; or in WO 91/02392.
  • FIG. 1 A,1 B illustrate schematically a first and heretofore most preferred embodiment according to the invention.
  • FIG. 2A,2B show two embodiments where deflection mirrors are omitted
  • FIG. 3A.3B depict two more embodiments comprising separate deflection mirrors
  • FIG. 4 illustrates a further embodiment comprising a vertical cavity surface emitting semiconductor microlaser
  • FIG. 5A,5B illustrate an embodiment showing a rotationally movable mirror
  • FIG. 6 shows another embodiment comprising an array of semiconductor laser devices, one of them adjustable
  • FIG. 7 depicts still another embodiment comprising an array of semiconductor laser devices, each adjustable according to the invention. DETAILED DESCRIPTION OF VARIOUS EMBODIMENTS ACCORDING TO THE INVENTION
  • FIGS 1A and 1 B illustrate schematically in a partly sectional side view and a perspective view a first embodiment of the invention.
  • a conventional semiconductor laser 1 is shown, mounted junction side down on a common support structure 3, in this embodiment a silicon submount required for such laser types, together with an adjustable external coupled cavity 2.
  • An adjustable part 7, here a cantilever, is integrated in common support structure 3.
  • the cantilever can be micromachined together with a hole by unisotropic etching well known in micromechanical arts. It supports a back-reflection mirror 6 of cavity 2. It may be coated with a conducting material and moved electrostatically by applying a voltage to it with respect to the rest of the submount.
  • the adjustable part may also be manipulated directly or indirectly by the variable to be measured. For example, a high voltage to be measured may be converted to a low voltage using a voltage deviding circuit and this low voltage is applied to the driving means. In an example of a temperature measuring device, thermal expansion may be used for manipulating the adjustable part.
  • the cavity 2 is formed in this embodiment between back-reflection mirror 6 and a laser surface part 5 functioning additionally as one of the laser resonator mirrors.
  • laser 1 has one cleaved or etched mirror 4 and the other facet etched at a 45° angie with respect to the axis of the laser's active layer 8 to form an internal total reflection mirror 1 1 , deflecting laser beam 9 onto the surface of the laser functioning as a second partially reflecting laser resonator mirror 5, and through said mirror and a narrow gap on back-reflection mirror 6 of cavity 2. Varying the narrow gap width adjusts cavity 2 and accordingly the wavelength of the tunable laser device. Additional aspects are shown in the embodiment of Figures 1A,1 B.
  • a V-groove 12 is formed, e.g. by micromachining steps as anisotropic etching, into the common support structure 3.
  • Groove 12 supports and aligns an optical fibre 13 and improves coupling to the laser.
  • Further alignment aids 14 may be integrated, e.g. pins, edges, notches, grooves or holes which serve in Figures 1A,1 B to position the laser at a predefined place.
  • Electrical contact pads and other electric or electronic elements are integrated, in this embodiment serving to drive laser or cantilever.
  • FIGs 2A to 4 illustrate other embodiments according to the invention in a semblable schematic side view as Figure 1 A.
  • deflection mirror (1 1 in Figure 1 ) can be dispensed with, depending on the chosen geometric layout.
  • the laser 1 is mounted junction side up in a groove serving as an alignment aid 14.
  • An adjustable cantilever carrying a back reflection mirror 6 of the external coupled cavity 2 projects down from an extension of the common support structure 3.
  • Alignment aids 21 in form of abutments function to define end positions of said back reflection mirror, which may be tuned in the range or switched between said end positions. Clearly, these end positions may be adjustable, too.
  • the adjustable cantilever projects up from the common support structure 3 and is formed monolithically with it, e.g. by micromachining.
  • An abutment 21 defines the far-end position of the cantilever.
  • Laser 1 is attached to the front side of common support structure 3 with help of alignment notches. Laser 1 may or may not contain a proper submount, for cooling and/or connecting purposes.
  • a common support structure like that of Figure 2B may be combined with a laser shown in Figure l A incorporating a deflection mirror 1 1.
  • Figures 3A and 3B show separate deflection mirrors 16, positioned to deflect laser beam 9 on back reflection mirror 6.
  • semiconductor laser 1 is directly grown on a common support structure 3 and a separate submount 19 is foreseen for cooling.
  • Deflection mirror 16 is additionally adjustable, in this embodiment with help of a piezoelectric transducer 10. Alignment aids 14 help in positioning deflection mirror support 15 on common support structure 3.
  • deflection mirror 16 is invariable and directly integrated in common support structure 3, e.g. deflection mirror support 15 may be monolithic with common support structure 3 and formed by micromachining methods.
  • main parts of support structure 3 and laser 1 are not shown for simplicity.
  • Figure 4 illustrates the use of a vertical cavity surface emitting semiconductor microlaser 1 in an embodiment according to the present invention.
  • a vertical cavity surface emitting semiconductor microlaser 1 is mounted on a common support structure 3 using alignment edges 14.
  • Beneath mirror 5 of laser 1 a hole is micromachined in support structure 3 which incorporates a cantilever as adjustable part 7 of an external coupled cavity 2 defined by back reflection mirror 6 and laser surface part 5.
  • FIGS 5A and 5B schematically show a further embodiment according to the invention in top view and sectional front view taken along lines b-b.
  • deflection mirror 16 is adjustable due to the rotatable bridge-like adjustable part 17 of external coupled cavity 2.
  • Such an adjustable part 17 may be monolithic with the common support structure.
  • Abutment means may be provided to define one or more of said rotational positions, depending on the intended use.
  • an alignment aid 21 is used defining one end stop of the rotatable motion, allowing easy switching to a back-reflection mirror part 6'.
  • Back-reflection mirror 6 may consist of one or several pieces. Clearly, further optical elements may be incorporated into external coupled cavity 2 defining its optical length.
  • Mirror support 18 may consist of one or several pieces, too, and may be monolithic with the support structure 3, or separate alignment aids (not shown) may be provided.
  • FIGs 6 and 7 two more embodiments according to the invention are shown schematically in top view ( Figure 6) and sectional view ( Figure 7), respectively. Both illustrate a common support structure supporting a plurality of external coupled cavity semiconductor laser devices, at least one (but eventually many more) containing an adjustable part 7 for its external coupled cavity 2, said adjustable part being integrated into the common support structure 3.
  • Figure 6 illustrates that case for external coupled cavity semiconductor laser devices of a type similar to Figure 2B.
  • Three semiconductor lasers are mounted side by side on a common support structure 3.
  • outer devices have invariable back reflection mirrors 6' and 6 3 and invariable mirror supports 18' and 18 3
  • a central device has an adjustable part 7 for its external coupled cavity 2, supporting related back reflection mirror 6 2 .
  • the central device may be tuned in a range approximately given by outer, invariable devices.
  • FIG. 7 an example of a large array (maybe in one or more dimensions) of external coupled cavity laser devices is illustrated schematically using microlasers semblable to that shown in Figure 4.
  • Microlasers of equal or different types, with equal or different wavelengths may be used according to the intended application.
  • a case is illustrated were all devices are adjustable having each an adjustable part l ⁇ to 7 n supporting a back-reflection mirror 6 1 to 6 n of the related external coupled cavity 2' to 2 n .
  • a microlaser array is built on a substrate 20 and different lasers 1 1 to 1 n are seperated by deep grooves, e.g. micromachined by etching.
  • the laser array is mounted on a common support structure 3 containing a micromachined cantilever for each device. Again, alignment aids 14 may help positioning the laser array with respect to the common support structure 3.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention a pour objet un dispositif laser hybride à semiconducteur, à cavité externe couplée, dont la longueur d'onde peut être réglée. Ce dispositif comprend une partie micromécanique réglable (7, 17) intégrée dans une structure de support commune (3) qui porte un laser à semi-conducteurs (1) et une cavité externe couplée (2) qui fonctionne comme un filtre en mode longitudinal réglable. Le positionnement de ladite partie réglable (7, 17) est de préférence électrostatique, ce qui produit une fonction de transfert approximativement linéaire entre la tension de positionnement et la longueur d'onde. Les applications envisagées comprennent les capteurs de mesure et les systèmes de communication à multiplexage à division de longueurs d'onde.
PCT/EP1993/003115 1993-11-08 1993-11-08 Dispositif laser hybride a semi-conducteurs a cavite externe couplee Ceased WO1995013638A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/EP1993/003115 WO1995013638A1 (fr) 1993-11-08 1993-11-08 Dispositif laser hybride a semi-conducteurs a cavite externe couplee

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP1993/003115 WO1995013638A1 (fr) 1993-11-08 1993-11-08 Dispositif laser hybride a semi-conducteurs a cavite externe couplee

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WO1995013638A1 true WO1995013638A1 (fr) 1995-05-18

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WO1997040344A1 (fr) * 1996-04-23 1997-10-30 R.D.P. Electronics Ltd. Transducteur optique, et procede et ensemble diode laser associes
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WO2002044672A3 (fr) * 2000-11-28 2002-09-12 Rosemount Inc Detecteur optique servant a mesurer des proprietes physiques et des proprietes d'une matiere
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WO2002013343A3 (fr) * 2000-08-09 2003-07-31 Jds Uniphase Corp Laser a retroaction repartie accordable
US6749346B1 (en) * 1995-11-07 2004-06-15 The Board Of Trustees Of The Leland Stanford Junior University Miniature scanning confocal microscope
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US6798729B1 (en) 1996-07-30 2004-09-28 Seagate Technology Llc Optical head using micro-machined elements
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US6914916B2 (en) 2000-10-30 2005-07-05 Santur Corporation Tunable controlled laser array
US6922278B2 (en) 2001-03-30 2005-07-26 Santur Corporation Switched laser array modulation with integral electroabsorption modulator
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