WO1997007588A1 - Convertisseur de courant electrique - Google Patents
Convertisseur de courant electrique Download PDFInfo
- Publication number
- WO1997007588A1 WO1997007588A1 PCT/JP1996/002315 JP9602315W WO9707588A1 WO 1997007588 A1 WO1997007588 A1 WO 1997007588A1 JP 9602315 W JP9602315 W JP 9602315W WO 9707588 A1 WO9707588 A1 WO 9707588A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thyristor
- power
- thyristor valve
- gate
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
- H02M1/092—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08144—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0824—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/105—Modifications for increasing the maximum permissible switched voltage in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
Definitions
- the present invention relates to a power converter that converts alternating current into direct current or direct current into alternating current.
- Fig. 2 shows an example of the configuration of a power converter equipped with a thyristor valve and its control device.
- the power converter shown in the figure has a plurality of optical direct firing thyristors (hereinafter simply referred to as thyristors) LTT in series as switch elements having the characteristic of passing current only in one direction. Equipped with a connected thyristor valve.
- a voltage divider circuit is connected in parallel to each thyristor LTT in order to equalize the voltage sharing of each thyristor in this thyristor: /.
- Each voltage divider consists of a series circuit of a capacitor C and a resistor R.
- Reactors L provided at both ends of the series thyristor limit the current flowing into the thyristor LTT when the thyristor LTT turns on. Reactor L also serves to reduce the rising speed of the surge voltage applied to thyristor LTT when external surge voltage V S is applied to thyristor LTT.
- Light emitting diodes LEDF and LEDR that emit light when a forward voltage and a reverse voltage are applied to each thyristor LTT are connected in parallel to each thyristor LTT.
- the resistor RD limits the current flowing through the light emitting diodes LEDF and LEDR.
- the pulse generator PG includes a photoelectric converter LEC that converts signals from the light emitting diodes LEDF and LEDR into a forward voltage signal FV and a reverse voltage signal RV.
- the forward voltage signal FV and the reverse voltage signal RV are used to determine the timing of the gate pulse that controls the gate of the thyristor LTT.
- the pulse generator PG light emitting diodes LED connected in series in the same number as the series number of thyristors LTT are provided.
- the serially connected light emitting diode LED is connected to a power supply E through a switching device S1 and a series impedance Z1.
- each light-emitting diode LED emits light simultaneously.
- Light emitted from each light emitting diode LED is input to a gate of each thyristor LTT through a light guide LG. That is, by turning on the switching device S1, the series-connected thyristors LTT can be simultaneously turned on.
- LG1 is a logic circuit for controlling the switching device S1, and AMP1 receives the output of the logic circuit LG1 and outputs a signal for controlling the switching device S1 on and off.
- Amplifier -This thyristor valve is provided with an Ares valve. The arrester Ar limits the peak value of the extraneous surge voltage V S to achieve insulation coordination with the withstand voltage (V D RM) of the thyristor L LTT.
- FIG. 3 is a waveform diagram showing a relationship between a voltage / current waveform and a gate pulse during thyristor valve operation.
- the waveform diagram shown in FIG. 2 is a waveform diagram in a case where the thyristor valve shown in FIG. 2 is connected to a three-phase prism and the inverter is operated by an inverter.
- AA is the voltage between the terminals of the thyristor LTT
- I ⁇ is the thyristor valve current.
- ⁇ and ⁇ show the transient withstand voltage after the thyristor valve current I ⁇ is cut off and before the forward voltage withstand voltage recovers to the rated value VDRM.
- the thyristor L ⁇ ⁇ requires a certain period of time TF ⁇ from when the thyristor valve current I ⁇ ⁇ is cut off until the withstand voltage in the forward direction completely recovers and can withstand an external voltage equivalent to VDR ⁇ . It is. In normal operation, there is no problem because the transient withstand voltage ⁇ ⁇ > terminal voltage A ⁇ is designed.
- PHS is a gate pulse command input from a controller (not shown) to the logic circuit LGI of the pulse generator PG.
- the logic circuit LGI in the pulse generator PG turns on the switching device S1 when the AND condition with the forward voltage signal FV such as the gate pulse command PHS is satisfied.
- the surge voltage VS1 becomes silenced during the period T1 after the current IT is cut off.
- the thyristor LTT cannot withstand the surge voltage VS 1 and may break down.
- the AND condition of the gate pulse command PHS and the forward voltage signal FV The current I 1 is passed to the switching device S 1 by establishing the condition.
- all the thyristors LTT are turned on by causing the light emitting diodes LED to emit light simultaneously at time t1 and inputting the protection gate power to all the thyristors LTT.
- the terminal voltage AA (thyristor voltage) applied to the thyristor LTT is a forward voltage.
- the LTT turns on and normal operation is no longer possible.
- the protection gate power In order to protect the thyristor LTT from the surge voltage VS2, the protection gate power must be applied to all thyristors LTT under the condition that the surge voltage VS2> AA10 ⁇ ⁇ ⁇ ( ⁇ ⁇ ⁇ is the voltage margin). Must be entered. However, unless ⁇ ⁇ ⁇ ⁇ is set so that ⁇ ⁇ + ⁇ AA and BB, thyristor LTT cannot be protected. Since the transient withstand voltage BB has an inherent difference due to the thyristor LTT, a judgment function must be provided for determining whether to input the protection gate power for each thyristor LTT individually.
- the pulse generator PG provided on the ground potential side and the high potential side thyristor
- the light guide LG is directly connected to the gate part of the lithium LTT, and it is not necessary to provide an electronic circuit in the gate part of the thyristor LTT on the high potential side.
- This enables the realization of highly reliable and simple thyristor valves. Therefore, providing a complex protection circuit for the thyristor valve loses the advantage of the optical direct firing thyristor LTT. Attempts have been made to incorporate a self-protection function for the forward voltage in the period T2 into the thyristor itself, but this has not been successful at present.
- the forward withstand voltage of the thyristor LTT has recovered to the rated value V DRM, so that no protection is required if the protection level of the arrestor Ar is coordinated. It is extremely difficult and impossible to achieve protection against forward overvoltage during the period T 2 in the light direct firing thyristor bulb.
- the distribution of the residual carrier at the joint surface is random, and when an overvoltage is applied, it turns on from the part with the lowest withstand voltage (the part with more residual carrier). In this case, if the carrier is not replenished enough to turn on electricity, local heating will occur, leading to destruction.
- An object of the present invention is to provide a power supply in the transition period from when the thyristor valve current flowing through the thyristor LTT is cut off until when the forward withstand voltage is restored to the rated value.
- An object of the present invention is to provide a power converter including a thyristor valve that does not destroy a thyristor LTT even when a forward overvoltage exceeding a withstand voltage is applied. Disclosure of the invention
- the present invention includes a pulse generator that can output two different types of gate power, turns on the thyristor LTT with the first gate power, and sets a forward withstand voltage after the thyristor valve current is cut off.
- the second gate line is given to the thyristor LTT during the transition period when the power returns to the rated value.
- This second gate power is set to a low power that cannot turn on the thyristor LTT with a normal applied voltage.
- a small number of carriers can exist in the gate portion during the transition period, and the portion having the lowest forward withstand voltage in the junction plane can be the gate portion. If a forward overvoltage is applied to the thyristor LTT in this state, the thyristor LTT is always turned on from the gate. When turned on from the gate section, the carrier increases due to the amplification action of the gate current, and the state shifts to a conductive state safely, thereby avoiding destruction.
- the second gate gate is too large, the thyristor LLT T will be turned on with a normal applied voltage, and normal operation will be impeded. If the gate size is too small, the protection effect will be insufficient. It is effective to select the second gate power from 1% to 10% of the minimum gate trigger power.
- the second gateno The period during which the key is continuously provided is slightly longer than the turn-off time of the thyristor LLT T. As a result, the rated forward withstand voltage can be restored immediately after the second gate power is turned off.
- the second gate power input period is set with the detected time as a starting point. By doing so, the second gate power can be reliably provided during the recovery period of the transient forward voltage of the thyristor LTT.
- Two electronic switches are provided for controlling the current flowing to a light source (for example, a light emitting diode) that applies gate power to the optical thyristor LTT, and the first gate switch is operated by the operation of the first electronic switch. And a second gate power is generated by the operation of the second electronic switch.
- the first gate power can be applied by interruption regardless of the voltage value. Can provide better protection
- the initial period (TI) of the recovery period of the transient forward voltage is a period in which the residual carrier is large
- the withstand voltage of the portion other than the gate portion is reduced, and the portion other than the gate portion is reduced. May occur. It is safer to apply the first gate power to turn on from the gate part avoiding the ON phenomenon in parts other than the gate part.
- FIG. 1 is a configuration diagram of a power conversion device including a thyristor valve control device according to the present invention.
- Fig. 2 shows the configuration of a conventional thyristor valve.
- Fig. 3 shows the relationship between the voltage and current waveforms and the gate pulse during thyristor valve operation.
- FIG. 1 shows the configuration of a power conversion device provided with a thyristor valve to which the present invention is applied.
- FIG. 1 portions denoted by the same reference numerals as those in FIG. 2 have the same functions.
- pg is a pulse generator installed at the ground potential, and applies an optical gate pulse to the light direct firing thyristor LTT.
- the series circuit of the light emitting diode LED which is the light source of the gate power, is turned on and off by the switching devices S I and S 2 to and from the power source E, and the currents I 1 and I 2 flow, respectively, to output the optical gate power.
- Z 1 and Z 2 are series impedances for determining the currents I I and 12, respectively.
- LG1 and LG2 are logic circuits for operating the switching devices SI and S2, respectively.
- AMPI and AMP2 are amplifiers that amplify the output signals of the logic circuits LG1 and LG2, respectively, and drive the switching devices SI and S2 with their outputs.
- the forward voltage signal FV and the reverse voltage signal RV which indicate that the forward voltage and the reverse voltage are applied to the thyristor LTT, are respectively connected to the logic circuits LG1 and L1 to determine the driving conditions of the switching devices S1 and S2. Taken into LG 2.
- Figure 3 shows the voltage and current waveforms during thyristor valve operation and the relationship between the thyristor valve and the present invention. This shows the relationship between the gate pulses.
- the logic circuit LG2 extends the reverse voltage signal RV and outputs the protection period setting signal STFP as shown in FIG.
- the protection period setting signal STPF is amplified by the amplifier AMP2, and then the switching device S2 is turned on to supply the current I2 to the light emitting diode LED. Since the current I 2 is limited to a value sufficiently lower than the current I 1 by the series impedance Z 2, it is possible to input a desired weak optical gate power to the thyristor LTT only during the period TPF. .
- CC indicated by a dashed line indicates the forward withstand voltage of the thyristor LTT when the current I 2 is supplied to the light emitting diode LED and the second gate power is applied to the thyristor LTT.
- the forward withstand voltage CC is lower than the forward withstand voltage BB when the second gate power is not applied to the thyristor LTT. This is because a weak gate power is input to the thyristor LTT, and as a result, the withstand voltage of the gate section decreases.
- the characteristic of the forward withstand voltage CC of the thyristor LTT when the second gate power is given to the thyristor LTT is that when the external surge voltage exceeds the forward withstand voltage CC, the gate turns on from the gate. It is to be. By turning on from the gate, there is an advantage that the thyristor LTT is not destroyed. If the current I 2 is set so that C C> A A10 ⁇ ⁇ ⁇ , normal operation can be performed without any problem even if I 2 is present.
- the thyristor LTT By turning off the current I2 flowing through the switching device S2 after the elapse of the period TFP, the thyristor LTT rapidly recovers the breakdown voltage to the rated value VDMR of the forward withstand voltage.
- the forward breakdown voltage of the thyristor LTT is not fully recovered, but according to the present invention, if an overvoltage exceeding the breakdown voltage is applied during this period, the thyristor LTT will not be detected. It breaks over but is protected without being destroyed.
- the impedance Z2, switching device S2, logic circuit LG2, and amplifier AMP2 shown in Fig. 1 are added to the pulse generator PG of the thyristor valve shown in Fig. 2.
- VDRM the rated value
- the process of restoring the forward breakdown voltage after the thyristor valve current is cut depends on the thyristor junction temperature T j and the thyristor valve current IT. Therefore, the recovery time becomes longer as the thyristor valve current IT becomes larger and the junction temperature Tj becomes higher.Therefore, if the thyristor valve current IT and the junction temperature Tj become larger, the protection period setting signal STFP is also increased. If the valve current IT and the junction temperature T j become smaller, the protection period setting signal STFP becomes shorter. By varying the protection period setting signal STFP in this manner, comprehensive protection can be achieved.
- the signal ITS that links to the thyristor valve current IT and the signal TjS that links to the thyristor junction temperature Tj are input to the pulse generator pg, and the signals are input to the logic circuit LG2.
- the thyristor valve when the forward overvoltage exceeding the withstand voltage of the thyristor is applied during the transient period until the thyristor recovers the forward withstand voltage, The thyristor is always turned on from the gate part to protect the thyristor from destruction, and this thyristor valve can realize a highly reliable AC / DC converter.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
Description
Claims
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP96927196A EP0789445B1 (en) | 1995-08-18 | 1996-08-19 | Electric power converter |
| US08/817,163 US5852556A (en) | 1995-08-18 | 1996-08-19 | Power converter |
| DE69637169T DE69637169T2 (de) | 1995-08-18 | 1996-08-19 | Elektrischer leistungswandler |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7210315A JP2854821B2 (ja) | 1995-08-18 | 1995-08-18 | サイリスタバルブ |
| JP7/210315 | 1995-08-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1997007588A1 true WO1997007588A1 (fr) | 1997-02-27 |
Family
ID=16587393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP1996/002315 Ceased WO1997007588A1 (fr) | 1995-08-18 | 1996-08-19 | Convertisseur de courant electrique |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5852556A (ja) |
| EP (1) | EP0789445B1 (ja) |
| JP (1) | JP2854821B2 (ja) |
| CN (1) | CN1042183C (ja) |
| DE (1) | DE69637169T2 (ja) |
| WO (1) | WO1997007588A1 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1119912B1 (de) | 1998-09-29 | 2002-05-29 | Siemens Aktiengesellschaft | Pulsgenerator zum erzeugen eines spannungspulses und zugehöriges verfahren |
| US6211792B1 (en) * | 1999-08-13 | 2001-04-03 | JADRIć IVAN | Method and apparatus detecting a failed thyristor |
| EP3812003A1 (en) | 2019-10-25 | 2021-04-28 | BIOTRONIK SE & Co. KG | An electric circuit comprising a thyristor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49107661A (ja) * | 1973-02-16 | 1974-10-12 | ||
| JPS5368558A (en) * | 1976-12-01 | 1978-06-19 | Toshiba Corp | Protective device for gate turn-off thyristor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3838332A (en) * | 1973-07-30 | 1974-09-24 | Philco Ford Corp | Line connected scr regulator |
| US4547843A (en) * | 1983-10-07 | 1985-10-15 | Sundstrand Corporation | Multiple output DC power supply |
| CH674781A5 (ja) * | 1987-12-08 | 1990-07-13 | Zellweger Uster Ag | |
| JPH0793811B2 (ja) * | 1990-05-14 | 1995-10-09 | 株式会社東芝 | サイリスタバルブの保護装置 |
| JPH0759256A (ja) * | 1993-08-19 | 1995-03-03 | Toshiba Corp | サイリスタバルブの保護装置 |
-
1995
- 1995-08-18 JP JP7210315A patent/JP2854821B2/ja not_active Expired - Lifetime
-
1996
- 1996-08-19 DE DE69637169T patent/DE69637169T2/de not_active Expired - Lifetime
- 1996-08-19 CN CN96190928A patent/CN1042183C/zh not_active Expired - Fee Related
- 1996-08-19 EP EP96927196A patent/EP0789445B1/en not_active Expired - Lifetime
- 1996-08-19 WO PCT/JP1996/002315 patent/WO1997007588A1/ja not_active Ceased
- 1996-08-19 US US08/817,163 patent/US5852556A/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49107661A (ja) * | 1973-02-16 | 1974-10-12 | ||
| JPS5368558A (en) * | 1976-12-01 | 1978-06-19 | Toshiba Corp | Protective device for gate turn-off thyristor |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0789445A4 (en) | 2000-01-26 |
| CN1042183C (zh) | 1999-02-17 |
| JPH0956149A (ja) | 1997-02-25 |
| DE69637169D1 (de) | 2007-08-30 |
| EP0789445B1 (en) | 2007-07-18 |
| EP0789445A1 (en) | 1997-08-13 |
| DE69637169T2 (de) | 2008-04-17 |
| US5852556A (en) | 1998-12-22 |
| JP2854821B2 (ja) | 1999-02-10 |
| CN1161114A (zh) | 1997-10-01 |
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