WO1998024123A1 - Procede et appareil de transport de substrats en feuilles minces - Google Patents
Procede et appareil de transport de substrats en feuilles minces Download PDFInfo
- Publication number
- WO1998024123A1 WO1998024123A1 PCT/JP1997/004242 JP9704242W WO9824123A1 WO 1998024123 A1 WO1998024123 A1 WO 1998024123A1 JP 9704242 W JP9704242 W JP 9704242W WO 9824123 A1 WO9824123 A1 WO 9824123A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- transfer
- substrate
- chamber
- thin plate
- inert gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
- H10P72/3214—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations by means of a cart or a vehicle
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
- H10P72/3222—Loading to or unloading from a conveyor
Definitions
- the present invention relates to a transfer method for transferring a thin plate-like substrate used for a semiconductor integrated circuit, a liquid crystal panel, or a solar cell panel between processes using a transfer robot. And transport equipment.
- Semiconductor devices such as semiconductor integrated circuits and semiconductor lasers, active matrix liquid crystal cells, solar cells, and solar cells have highly-cleaned surfaces. It is manufactured by sequentially laminating various predetermined thin films on a silicon substrate, a gallium arsenide substrate, a glass substrate, or the like. Extremely high precision is required in the manufacture of these components, and even small amounts of impurities adhere to or adhere to the surface of the substrate to be treated, that is, the surface of the thin plate-shaped substrate. This makes it difficult to produce high quality products.
- the sheet-like substrate may become charged during transportation or by undergoing various kinds of processing, and as a result, impurities in the atmosphere may be attracted and attached. Let's put it on.
- a-Si amorphous silicon
- the gate oxide film process for manufacturing of an integrated circuit the was n unit or that exist moisture on the surface of the p unit, S at the interface S i 0 2 and S i i O x Once the film is formed, the MOS transistor does not function as a switch. Similarly, if moisture is present on the surface of the capacitor, a SiOx film is formed on the interface, and the charge to the capacitor electrode is reduced. It cannot function as a storage element.
- the wiring process before forming the tungsten (W) film, it is necessary to prevent the snow and the sink by using tungsten stainless steel. Although a TiN film is formed, the presence of moisture on the substrate causes problems such as a decrease in the adhesion of the TiN film.
- the surface of the substrate (silicon) is reduced.
- the carbon and silicon react to form a SiC film, which causes a malfunction in the operating characteristics of the device.
- various processing devices used for manufacturing semiconductor integrated circuits and the like perform many processing steps such as semiconductor integrated circuits, which are arranged in a clean room from which fine particles have been removed. Since the wafers are manufactured through a process, the work (sheet-like substrate) is conveyed one after another from one processing apparatus to a processing apparatus of the next process in order to perform each process operation. For this reason, during this transfer, the thin plate-shaped base is exposed to the air in the clean room.
- the clean room is maintained at a temperature of 20 to 25 ° C and a relative humidity of about 50%, and although particulates have been removed, gaseous impurities remain. Present in large quantities. As a result, impurities present in the clean room air will be adsorbed on the surface of the sheet-like substrate. For example, moisture adsorbs instantaneously on the surface of the sheet-like substrate. In order to prevent the adsorption of this water, it is practically difficult to remove the entire water in the clean room.
- the sheet-like substrate is transferred under an inert gas atmosphere using a special transfer robot.
- the following transport system has been proposed.
- the transfer robot in this case is provided with a storage box (storage room) capable of storing the thin plate-shaped substrate under an inert gas atmosphere, and a transfer mechanism for movement. Yes. Also perform each process work
- a processing apparatus is provided with a transfer chamber capable of transferring a thin plate-like substrate under an inert gas atmosphere.
- a transport robot is driven to transfer a thin plate-shaped base housed in an inert gas atmosphere in a storage box in a certain process. Transfer from the chamber to the transfer chamber of the next process. Then, when the transfer robot arrives in front of the transfer chamber, the storage box of the transfer robot and the transfer chamber are connected, and each gate is opened. Then, the thin substrate is transferred between the storage box and the transfer chamber. For example, after the sheet-like substrate is carried into the transfer chamber from the storage box, the sheet-like substrate is moved from the transfer chamber to the processing device, and a predetermined process is performed. When the processing is completed, return the sheet-shaped substrate to the transfer chamber and return it to the storage box again. Then, the gate is closed and the feeding robot is driven to convey the thin plate-shaped substrate to the next step.
- a transfer board is provided at each gate of the storage box and the transfer chamber. It will go through a gating gate valve, but the gate valve has a recess in its front that is structurally inevitable. As a result, air in the clean room accumulates in the recess, and as a result, air that has accumulated in the recess at the same time as the loading and unloading of the sheet-like substrate is performed. There is a problem that it gets into the transfer room or storage box.
- the transfer robot holds a container (filled container) filled with high-purity inert gas.
- Their to, housed ball Tsu impurities eyes were One or such monitors in click scan, the filled container or Tsune Luo required amount or more of gas this flow was aerated with (As a result, There was a problem in that the size of the filling container became larger and the transfer robot itself became larger, and if the gas flow rate was reduced to reduce the size of the filling container, high cleanliness was obtained. Another problem was that the atmosphere was difficult to maintain.
- the present invention is directed to a case in which a transfer robot having a storage box transports a thin plate-like substrate from one process to the next process, and collects the thin substrate in a recess in the front of the gate valve. Further, it is an object of the present invention to provide a transfer method and a transfer device capable of preventing air from being mixed.
- the method for transporting a thin plate-like substrate of the present invention comprises using a transfer robot provided with a storage chamber capable of storing a thin plate-like substrate in an inert gas atmosphere, using a transfer robot, and attaching a processing apparatus thereto. Maintained in a gas atmosphere In the method for transferring a thin substrate between the transfer chambers, the transfer of the thin substrate between the storage room of the transfer robot and the transfer chamber on the processing apparatus side may be performed.
- a connection chamber is disposed between the storage chamber and the transfer chamber, and after the connection chamber is depressurized and an inert gas is introduced into the connection chamber, the gate of the storage chamber and the transfer chamber is opened. It is characterized by carrying in and out of a thin substrate.
- the inert gas is measured by a semiconductor laser detector, and from the result, the impurity abundance ratio of each of the chambers is calculated. It is desirable to control the flow rate of the inert gas introduced into each room and the loading / unloading operation of the thin-plate base on the basis of the data.
- each volume of the storage chamber, the transport chamber, and the connection chamber is represented by V i [cm 3 ] .V 2 [cm : i ], V If 3 is a [cm 3], the impurity exists ratio ⁇ i of the indoor, ⁇ 2, and ⁇ 3, the entire surface area of the thin plate substrate is S [cm 2],
- the thin plate-shaped substrate is carried in and out between the storage chamber and the transfer chamber.
- a mixed gas of an inert gas and an oxygen gas is used in place of the inert gas. Everything is possible.
- the transfer device for a thin plate-like substrate of the present invention is provided with an airtight transfer chamber in the processing device for the thin plate-like substrate, and a loading / unloading port for loading / unloading the thin plate-like substrate between the transfer chamber and the outside.
- a gate valve is provided at the loading / unloading port to hermetically block the loading / unloading port, while the thin-plate-like base is stored in a transport robot capable of moving between the transporting chambers.
- An airtight storage chamber is provided, and a loading / unloading port is provided in the storage chamber for loading / unloading the sheet-like base body with the outside, and the loading / unloading port is hermetically shielded at the loading / unloading port.
- a gate valve is provided, and the gate valve is opened in a state where the storage chamber and the transfer chamber are connected to each other.
- An airtight connection room is provided between the storage room and the transfer room,
- Each of the storage chamber, transfer chamber and connection chamber is provided with a gas inlet and an exhaust port for venting inert gas, and a vacuum exhaust means for ventilating under reduced pressure.
- This is a device for transporting a thin plate-shaped substrate characterized by this.
- a semiconductor laser detector for measuring the impurity concentration in each of the chambers, and an impurity content ratio in each chamber are calculated from the impurity concentration, and the calculation result is obtained. It is desirable to provide control means for controlling the loading and unloading of the thin plate-like base between the storage room and the transfer room based on the above.
- FIG. 1 is a schematic plan view of an embodiment of the present invention.
- FIG. 2 is an external perspective view of the transfer robot according to the embodiment of the present invention.
- FIG. 3 is a cross-sectional view of a main part of the gate valve according to the embodiment of the present invention, in which (a) shows a state when closed, and (b) shows a state when opened.
- Fig. 4 is an enlarged view of the main part of Fig. 1.
- FIG. 1 is a schematic plan view showing a state in which the transfer robot 30 is connected to a transfer chamber 2 attached to the processing apparatus 1
- FIG. 2 is an external view of the transfer robot.
- an air-tight transfer chamber 2 is additionally provided in a processing apparatus 1 for a thin plate-shaped substrate S.
- the processing apparatus 1 performs a predetermined processing on the sheet-like substrate S.
- the processing apparatus 1 performs a predetermined processing on the sheet-like substrate S.
- substrate processing apparatuses such as plasma etching apparatuses, fall into this category.
- a transfer hand 5 is provided in the transfer chamber 2, and the transfer hand 5 is provided between the storage box 3 and the transfer chamber 2 and between the transfer chamber 2 and the processing apparatus 1. In this way, the thin substrate S can be taken in and out.
- the transfer chamber 2 is provided with a loading / unloading port 2a for loading / unloading the thin plate-shaped substrate S with the outside, and the loading / unloading port 2a is airtightly shielded from the loading / unloading port 2a.
- a gate valve GV2 that can be operated is provided outside the gate valve GV2, a connection pipe 4a constituting the connection chamber 4 is joined by an internal space. As shown in FIG. 4, the connecting pipe 4a is attached to the transfer chamber 2 side by a flange 4b at one end, and a flange 4 at the other end.
- the front end face of the gate valve GV1 (described later) on the transfer robot 30 side can be airtightly connected to b.
- the transfer robot 30 can be freely moved between the plurality of transfer chambers 2, and is provided with a portable thin plate-shaped base storage box (storage room) 3. Yes.
- the transport robot 30 is guided along a magnet rail 31 on a floor on which a dust-free sheet 36 is spread, as shown in FIG. Then, it drives itself by driving the motor 33.
- the storage box 3 can be kept airtight.
- a loading / unloading port 3a for loading / unloading the sheet-like substrate S between the inside and the outside of the storage room 3 is provided, and the loading / unloading port 3a is provided at the loading / unloading port 3a.
- a gate valve GV1 is provided to hermetically shield the loading / unloading port 3a.
- Gate valves GV1 and GV2 are provided with appropriate ports with inlet / outlet ports 2a and 3a as shown in Fig. 3 (a) and (b) when they are closed and open.
- a gate plate 8c By mounting a gate plate 8c on the slide itself on the thick casing 8a, and operating the gate plate 8c by the drive mechanism 8b.
- the gates 8c can be opened and closed, and the gate plate 8c can be opened and closed as shown in FIG. 3 (a) with the gate plate 8c closed.
- a recess 8d is formed on the front side of the.
- the inside of the storage box 3 of the transfer robot 30 is ventilated by inert gas using an inert gas.
- the gas inlet 11 and the exhaust 21 are provided for the purpose.
- the gas inlet 11 is provided with a valve V 1. When the gas inlet 11 is connected to the gas supply source, the valve V 1 is opened. Thus, inert gas can be introduced into the storage box 3.
- the gas inlets 12 and 13 through which the inert gas is ventilated.
- outlets 22 and 23 are provided.
- Norelev V2, V3 When these valves V2 and V3 are opened while the gas inlets 12 and 13 are connected to the gas supply source, the gas inlet becomes inactive.
- the gas can be introduced into the transfer chamber 2 and the connection chamber 4 individually.
- Flow control devices C 1 C 2 and C 3 are provided upstream of valves VI, V 2 and V 3 at the gas inlets, respectively.
- Each gas outlet 21, 22, 23 is connected to a vacuum exhaust means (a part is shown as a vacuum pump 25), and the exhaust line of each chamber has An impurity measuring means for measuring impurities, for example, a semiconductor laser detector Kl, ⁇ 2, ⁇ 3 is provided.
- a semiconductor laser detector Kl, ⁇ 2, ⁇ 3 is provided according to the measurement results of the semiconductor laser detectors ⁇ 1, ⁇ 2, ⁇ 3, the flow control devices C1, C2 at each gate valve GV1, GV2, each gas inlet A control means 10 is provided to control the operation of the transfer hand 5, C3 and the transfer hand 5.
- a semiconductor laser detector impurity measuring means
- windows are provided in each room and lasers are passed through these windows. If an oscillator and a photodetector that receives laser light from the oscillator are provided, in-situ measurement can be performed.
- the inert gas introduced here is a gas that does not react with the sheet-like substrate S and from which fine particles and moisture have been removed.
- the inert gas may be, for example, a gas. , Nitrogen gas, argon gas, helium gas, etc. can be used.
- the transport robot and the processing equipment are damaged in the unlikely event that a large amount of As a safety measure, use inert gas to which oxygen gas is added in advance as a safety measure in case active gas leaks out. You can.
- the oxygen gas to be added at this time should be one from which fine particles, moisture and gas-like impurities have been removed.
- the oxygen concentration in the above mixed gas is less than 18%, a large amount of gas with low oxygen concentration may flow into the clean room, and the oxygen concentration may decrease. If more than 22% of the gas flows into the cleanroom, it may be ignited by a small amount of static electricity. It is desirable that the oxygen concentration be 18% by volume to 22% by volume.
- the semiconductor laser detectors K1, K2, and K3 receive an oscillator that oscillates laser light having an oscillation wavelength in the infrared region, and receive and receive the oscillated laser light. And at least a light receiver for measuring the absorption spectrum of the laser light.
- the oscillator or the light receiver oscillates or receives laser light having a wavelength described later, but is not limited to an oscillator, but is used as an oscillator.
- the DFB semiconductor laser does not require a monochromator or other spectrometer because the diffraction grating is in the current injection region and has a single mode oscillation. Light loss is small, and the device can be downsized.
- DBRs distributed Bragg Reflection
- the receiver is a photodetector that has sensitivity to the wavelength of the laser light of the oscillator to be used, and is composed of, for example, Ge and InGaAs.
- a solid-state photodetector is preferred.
- the exhaust line from each of the storage box, the connection room, and the transfer room, or the semiconductor line is provided in each room.
- By providing a window through which laser light can pass, and installing an oscillator and a receiver in that window it is possible to measure impurities in the atmosphere in each room. This makes it possible to detect trace impurities (0.1 ppm level). Adjustment of the oscillation wavelength is also easy.
- the concentration of impurities can be detected instantaneously, it is suitable for utilizing the impurity data by feeding it back.
- the oscillation wavelength may be set to 1.35 to 1.42 ⁇ m.
- the oscillation wavelength from the oscillator is 0.75 If the sweep range of 1-2 ⁇ m, this you measure H 2 Ru Oh at this is found gaseous impurities, C 0 2, CH 4, S i H 4, HF, HB r, the ⁇ 2 or the like at the same time And become ⁇ .
- Quantification of impurities using a semiconductor laser may be performed by applying various known methods, for example, as described in Japanese Patent Application Laid-Open No. Hei 5-99845. The law can be applied.
- the absorption spectrum of the inert gas in the storage box 3, connection chamber 4, and transport chamber 2 is subtracted from the measured absorption spectrum, and subtracted. Identify and identify absorption peaks related to impurities, select absorption peaks that have almost no interference peaks as close as possible, and quantify impurities based on their absorption intensities. You should.
- the wavelength can be easily swept by changing the current injected into the oscillator or the temperature of the oscillator.
- the storage box 3 When the transport robot 30 in which the thin plate-shaped substrate S is stored in the storage box 3 is transported to a certain process, the storage box 3 is connected. Connected to transfer room 2 via connecting room 4. Then, according to the command of the control means 10, the connection chamber 4 is depressurized, the inert gas is ventilated, and at the same time, the storage box is opened. The impurity concentration in the space 3, the connection room 4, and the transfer room 2 is measured by the semiconductor laser detectors K1, K2, and K3. Then, the control unit 10 calculates the impurity abundance ratio of each chamber from the impurity concentration, and based on the data, determines the amount of the purge gas (inert gas) to be introduced. Flow rate is controlled.
- the gate valves GV1 and GV2 are opened, and the storage box 3 is connected to the storage box 3 via the connection chamber 4. Loading and unloading of the sheet-like substrate S is performed between the transfer chambers 2.
- the flow rate of the purge gas is always controlled such that the abundance ratio of impurities in the storage box 3 and the transfer chamber 2 is equal to or less than a specified value.
- the storage box 3 and the transfer chamber 2 are connected via the connection chamber 4, and the thin substrate S is loaded while the connection chamber 4 is in a gas-tight state.
- the storage box 3 and The air in the clean room which has accumulated in the recesses 8d of the gate valves GV1 and GV2 of the transfer chamber 2 (see FIG. 3), accompanies the loading and unloading of the sheet-like substrate S. So that it does not enter the transfer chamber 2. Therefore, it is possible to avoid adverse effects due to impurities mixed in at the same time as the loading of the sheet-like substrate S.
- the flow rate of the purge gas in each of the chambers 2, 3, and 4 is controlled by the impurity data obtained by the semiconductor laser detectors K1, K2, and K3. Then, when the abundance of impurities within the specified value is reached, the gate valves GV1 and GV2 are opened, and at the same time, the transfer of the sheet-like substrate S by the transfer hands 5 and 6 is performed. Since the process is performed, the sheet-like substrate S can always be transferred under a highly clean atmosphere.
- the carrier gas is filled with the gas (inert gas or a mixture of inert gas and oxygen gas) held in the transfer robot. Some containers can be made smaller.
- the impurities are moisture or organic carbon
- loading and unloading are performed in the next stage.
- the amount of impurities adsorbed in the transport system is 10 13 XS or less.
- the amount of impurities is 10 XS
- the adsorption of impurities on the surface of the sheet-like substrate is less than the adsorption of monolayers. You can do it.
- monolayer adsorption when the impurity is water, only a gas molecule is present around the water molecule, so that a natural oxide film is not formed even in the presence of oxygen.
- organic contaminants organic carbonaceous materials
- the sheet-like substrate S that satisfies the above (formula a) and is carried into the transfer chamber 2 is taken into the predetermined processing apparatus 1 by the transfer hand 5, and is processed by the processing hand 5.
- the predetermined processing is performed by 1.
- the sheet-like substrate S is transferred again from the transfer chamber 2 to the storage box 3 by the transfer hand 5 and drives the transfer robot 30. By doing so, it is transported to the next process.
- the thin substrate s was transported using the transport device of the present invention, and the presence or absence of a natural oxide film on the surface of the thin substrate s and organic contaminants were measured.
- Moisture organic contaminant storage box 4 0 2 x 10 0 Transfer room 3 x 10 2 X 0 Connection room 3 x 10 0 1.2 x 10 0 Under these conditions, the thin plate substrate S is stored in the storage box.
- a transfer experiment was carried out to transfer the wafer from 3 to the transfer chamber 2, and the natural oxide film and organic contaminants on the surface of the thin substrate S returned to the storage box 3 were examined by X-ray photoelectron spectroscopy. Analyzer and FT-IR (Fourier transform Infrared spectrometer), neither was confirmed.
- the storage chamber of the transfer robot and the transfer chamber on the processing device side are connected via the connection chamber, and the connection chamber is gas purged.
- the thin substrate is loaded and unloaded in the state of being closed, so that the inside of the clean room that has accumulated in the recesses of the storage box and the gate valve of the transfer chamber is set. This prevents air from entering the transfer chamber as the thin substrate is carried in and out. Therefore, it is possible to prevent the adverse effects due to impurities mixed in at the same time as the loading of the sheet-like substrate.
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Feeding Of Articles By Means Other Than Belts Or Rollers (AREA)
Description
Claims
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE69736224T DE69736224T2 (de) | 1996-11-26 | 1997-11-21 | Verfahren und vorrichtung zum transportieren von blattförmigen gegenstanden |
| EP97912528A EP0889515B1 (en) | 1996-11-26 | 1997-11-21 | Method and apparatus for conveying thin sheet-like substrate |
| KR1019980705631A KR100295983B1 (ko) | 1996-11-26 | 1997-11-21 | 박판형 기판의 운송방법 및 운송장치 |
| US09/101,879 US6343239B1 (en) | 1996-11-26 | 1997-11-21 | Transportation method for substrate wafers and transportation apparatus |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8/315193 | 1996-11-26 | ||
| JP31519396A JP3901265B2 (ja) | 1996-11-26 | 1996-11-26 | 薄板状基体の搬送方法及び搬送装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1998024123A1 true WO1998024123A1 (fr) | 1998-06-04 |
Family
ID=18062539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP1997/004242 Ceased WO1998024123A1 (fr) | 1996-11-26 | 1997-11-21 | Procede et appareil de transport de substrats en feuilles minces |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6343239B1 (ja) |
| EP (1) | EP0889515B1 (ja) |
| JP (1) | JP3901265B2 (ja) |
| KR (1) | KR100295983B1 (ja) |
| DE (1) | DE69736224T2 (ja) |
| TW (1) | TW355176B (ja) |
| WO (1) | WO1998024123A1 (ja) |
Families Citing this family (299)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1030350A4 (en) | 1998-07-08 | 2007-10-31 | Taiyo Nippon Sanso Corp | SYSTEM AND METHOD FOR PRODUCING AND SUPPLYING HIGHLY CLEAN DRY AIR |
| NL1010317C2 (nl) * | 1998-10-14 | 2000-05-01 | Asm Int | Sorteer/opslaginrichting voor wafers en werkwijze voor het hanteren daarvan. |
| TW499696B (en) * | 1999-04-27 | 2002-08-21 | Tokyo Electron Ltd | Processing apparatus and processing method |
| US6748334B1 (en) * | 1999-12-06 | 2004-06-08 | Jorge E. Perez | Specialty gas analysis system |
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| JP2004022940A (ja) * | 2002-06-19 | 2004-01-22 | Tokyo Seimitsu Co Ltd | 研磨装置、研磨方法、ウェーハ待避プログラム |
| KR100558558B1 (ko) * | 2004-01-26 | 2006-03-10 | 삼성전자주식회사 | 멀티챔버 프로세스장치 |
| US9177843B2 (en) * | 2007-06-06 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Preventing contamination in integrated circuit manufacturing lines |
| JP5332142B2 (ja) * | 2007-06-29 | 2013-11-06 | 株式会社Ihi | 浮上搬送装置 |
| CN101593716B (zh) * | 2009-05-12 | 2011-06-29 | 上海微电子装备有限公司 | 器件传输方法及其装置 |
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| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
| US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
| US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
| US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
| US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
| US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
| US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
| KR102762543B1 (ko) | 2016-12-14 | 2025-02-05 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| KR102700194B1 (ko) | 2016-12-19 | 2024-08-28 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
| US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
| US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
| US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| TWI815813B (zh) | 2017-08-04 | 2023-09-21 | 荷蘭商Asm智慧財產控股公司 | 用於分配反應腔內氣體的噴頭總成 |
| US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
| US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
| KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
| TWI791689B (zh) | 2017-11-27 | 2023-02-11 | 荷蘭商Asm智慧財產控股私人有限公司 | 包括潔淨迷你環境之裝置 |
| JP7214724B2 (ja) | 2017-11-27 | 2023-01-30 | エーエスエム アイピー ホールディング ビー.ブイ. | バッチ炉で利用されるウェハカセットを収納するための収納装置 |
| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
| KR102695659B1 (ko) | 2018-01-19 | 2024-08-14 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| US11685991B2 (en) | 2018-02-14 | 2023-06-27 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
| US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
| KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
| US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102600229B1 (ko) | 2018-04-09 | 2023-11-10 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법 |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| TWI843623B (zh) | 2018-05-08 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| TWI840362B (zh) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 水氣降低的晶圓處置腔室 |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
| TWI871083B (zh) | 2018-06-27 | 2025-01-21 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料之循環沉積製程 |
| US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| KR102707956B1 (ko) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
| CN110970344B (zh) | 2018-10-01 | 2024-10-25 | Asmip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
| KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
| US12378665B2 (en) | 2018-10-26 | 2025-08-05 | Asm Ip Holding B.V. | High temperature coatings for a preclean and etch apparatus and related methods |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| KR102748291B1 (ko) | 2018-11-02 | 2024-12-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
| US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| JP7504584B2 (ja) | 2018-12-14 | 2024-06-24 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
| TWI866480B (zh) | 2019-01-17 | 2024-12-11 | 荷蘭商Asm Ip 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
| KR102727227B1 (ko) | 2019-01-22 | 2024-11-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
| KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
| TWI873122B (zh) | 2019-02-20 | 2025-02-21 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
| TWI845607B (zh) | 2019-02-20 | 2024-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
| KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
| TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
| KR102762833B1 (ko) | 2019-03-08 | 2025-02-04 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
| KR102782593B1 (ko) | 2019-03-08 | 2025-03-14 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
| KR102858005B1 (ko) | 2019-03-08 | 2025-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
| JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
| KR102809999B1 (ko) | 2019-04-01 | 2025-05-19 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
| KR102897355B1 (ko) | 2019-04-19 | 2025-12-08 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
| KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
| KR102869364B1 (ko) | 2019-05-07 | 2025-10-10 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
| KR102929471B1 (ko) | 2019-05-07 | 2026-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
| KR102929472B1 (ko) | 2019-05-10 | 2026-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
| JP7612342B2 (ja) | 2019-05-16 | 2025-01-14 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| JP7598201B2 (ja) | 2019-05-16 | 2024-12-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
| USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
| KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
| KR102918757B1 (ko) | 2019-06-10 | 2026-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 석영 에피택셜 챔버를 세정하는 방법 |
| KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
| KR102911421B1 (ko) | 2019-07-03 | 2026-01-12 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
| JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
| CN112216646B (zh) | 2019-07-10 | 2026-02-10 | Asmip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
| KR102895115B1 (ko) | 2019-07-16 | 2025-12-03 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| TWI826704B (zh) | 2019-07-17 | 2023-12-21 | 荷蘭商Asm Ip私人控股有限公司 | 自由基輔助引燃電漿系統和方法 |
| KR102860110B1 (ko) | 2019-07-17 | 2025-09-16 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| KR102903090B1 (ko) | 2019-07-19 | 2025-12-19 | 에이에스엠 아이피 홀딩 비.브이. | 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법 |
| TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
| CN112309843B (zh) | 2019-07-29 | 2026-01-23 | Asmip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
| CN112309899B (zh) | 2019-07-30 | 2025-11-14 | Asmip私人控股有限公司 | 基板处理设备 |
| KR20210015655A (ko) | 2019-07-30 | 2021-02-10 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 방법 |
| CN112309900B (zh) | 2019-07-30 | 2025-11-04 | Asmip私人控股有限公司 | 基板处理设备 |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
| KR20210018761A (ko) | 2019-08-09 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 장치를 포함한 히터 어셈블리 및 이를 사용하는 방법 |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| JP7810514B2 (ja) | 2019-08-21 | 2026-02-03 | エーエスエム・アイピー・ホールディング・ベー・フェー | 成膜原料混合ガス生成装置及び成膜装置 |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| KR102928101B1 (ko) | 2019-08-23 | 2026-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
| KR102868968B1 (ko) | 2019-09-03 | 2025-10-10 | 에이에스엠 아이피 홀딩 비.브이. | 칼코지나이드 막 및 상기 막을 포함한 구조체를 증착하기 위한 방법 및 장치 |
| KR102806450B1 (ko) | 2019-09-04 | 2025-05-12 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
| KR102733104B1 (ko) | 2019-09-05 | 2024-11-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US12469693B2 (en) | 2019-09-17 | 2025-11-11 | Asm Ip Holding B.V. | Method of forming a carbon-containing layer and structure including the layer |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
| KR102948143B1 (ko) | 2019-10-08 | 2026-04-07 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
| TW202128273A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體注入系統、及將材料沉積於反應室內之基板表面上的方法 |
| TWI846953B (zh) | 2019-10-08 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理裝置 |
| TWI846966B (zh) | 2019-10-10 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成光阻底層之方法及包括光阻底層之結構 |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| KR102845724B1 (ko) | 2019-10-21 | 2025-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
| US11996292B2 (en) | 2019-10-25 | 2024-05-28 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| KR102890638B1 (ko) | 2019-11-05 | 2025-11-25 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| KR102861314B1 (ko) | 2019-11-20 | 2025-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
| CN112951697B (zh) | 2019-11-26 | 2025-07-29 | Asmip私人控股有限公司 | 基板处理设备 |
| KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
| CN120432376A (zh) | 2019-11-29 | 2025-08-05 | Asm Ip私人控股有限公司 | 基板处理设备 |
| CN112885692B (zh) | 2019-11-29 | 2025-08-15 | Asmip私人控股有限公司 | 基板处理设备 |
| JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
| KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| KR102943768B1 (ko) | 2019-12-19 | 2026-03-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| JP7730637B2 (ja) | 2020-01-06 | 2025-08-28 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
| TWI887322B (zh) | 2020-01-06 | 2025-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 反應器系統、抬升銷、及處理方法 |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| KR102882467B1 (ko) | 2020-01-16 | 2025-11-05 | 에이에스엠 아이피 홀딩 비.브이. | 고 종횡비 피처를 형성하는 방법 |
| KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
| TWI889744B (zh) | 2020-01-29 | 2025-07-11 | 荷蘭商Asm Ip私人控股有限公司 | 污染物捕集系統、及擋板堆疊 |
| TW202513845A (zh) | 2020-02-03 | 2025-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 半導體裝置結構及其形成方法 |
| KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| KR102916725B1 (ko) | 2020-02-13 | 2026-01-23 | 에이에스엠 아이피 홀딩 비.브이. | 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법 |
| KR20210103953A (ko) | 2020-02-13 | 2021-08-24 | 에이에스엠 아이피 홀딩 비.브이. | 가스 분배 어셈블리 및 이를 사용하는 방법 |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| TWI895326B (zh) | 2020-02-28 | 2025-09-01 | 荷蘭商Asm Ip私人控股有限公司 | 專用於零件清潔的系統 |
| KR102943116B1 (ko) | 2020-03-04 | 2026-03-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 정렬 고정구 |
| KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
| US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
| KR102775390B1 (ko) | 2020-03-12 | 2025-02-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
| US12173404B2 (en) | 2020-03-17 | 2024-12-24 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
| KR102755229B1 (ko) | 2020-04-02 | 2025-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
| TWI887376B (zh) | 2020-04-03 | 2025-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 半導體裝置的製造方法 |
| TWI888525B (zh) | 2020-04-08 | 2025-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
| KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| KR102901748B1 (ko) | 2020-04-21 | 2025-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 기판을 처리하기 위한 방법 |
| TW202539998A (zh) | 2020-04-24 | 2025-10-16 | 荷蘭商Asm Ip私人控股有限公司 | 包含釩化合物之組成物與容器及用於穩定釩化合物之方法及系統 |
| KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
| CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
| KR102934380B1 (ko) | 2020-04-24 | 2026-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 보라이드 및 바나듐 포스파이드 층을 포함한 구조체를 형성하는 방법 |
| KR102866804B1 (ko) | 2020-04-24 | 2025-09-30 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
| KR102783898B1 (ko) | 2020-04-29 | 2025-03-18 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
| KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
| JP7726664B2 (ja) | 2020-05-04 | 2025-08-20 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板を処理するための基板処理システム |
| KR20210137395A (ko) | 2020-05-07 | 2021-11-17 | 에이에스엠 아이피 홀딩 비.브이. | 불소계 라디칼을 이용하여 반응 챔버의 인시츄 식각을 수행하기 위한 장치 및 방법 |
| JP7736446B2 (ja) | 2020-05-07 | 2025-09-09 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同調回路を備える反応器システム |
| KR102788543B1 (ko) | 2020-05-13 | 2025-03-27 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
| KR102936676B1 (ko) | 2020-05-15 | 2026-03-10 | 에이에스엠 아이피 홀딩 비.브이. | 다중 전구체를 사용하여 실리콘 게르마늄 균일도를 제어하기 위한 방법 |
| KR102905441B1 (ko) | 2020-05-19 | 2025-12-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR20210145079A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 기판을 처리하기 위한 플랜지 및 장치 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH053240A (ja) * | 1991-06-24 | 1993-01-08 | Tdk Corp | クリーン搬送方法及び装置 |
| JPH05275519A (ja) * | 1992-03-27 | 1993-10-22 | Toshiba Corp | 多室型基板処理装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR970004947B1 (ko) * | 1987-09-10 | 1997-04-10 | 도오교오 에레구토론 가부시끼가이샤 | 핸들링장치 |
| US5083865A (en) * | 1990-05-11 | 1992-01-28 | Applied Materials, Inc. | Particle monitor system and method |
| JP2808826B2 (ja) * | 1990-05-25 | 1998-10-08 | 松下電器産業株式会社 | 基板の移し換え装置 |
| US5518360A (en) * | 1990-11-16 | 1996-05-21 | Kabushiki-Kaisha Watanabe Shoko | Wafer carrying device and wafer carrying method |
| JP3059262B2 (ja) * | 1991-10-08 | 2000-07-04 | 日本酸素株式会社 | ガス中の微量水分分析装置 |
| JPH05166732A (ja) * | 1991-12-12 | 1993-07-02 | Nkk Corp | 真空成膜装置 |
| JP3275390B2 (ja) * | 1992-10-06 | 2002-04-15 | 神鋼電機株式会社 | 可搬式密閉コンテナ流通式の自動搬送システム |
| KR100267617B1 (ko) * | 1993-04-23 | 2000-10-16 | 히가시 데쓰로 | 진공처리장치 및 진공처리방법 |
| US5934856A (en) * | 1994-05-23 | 1999-08-10 | Tokyo Electron Limited | Multi-chamber treatment system |
| WO1997024760A1 (en) * | 1995-12-28 | 1997-07-10 | Nippon Sanso Corporation | Method and device for transferring thin plate-like substrate |
| JP3742451B2 (ja) * | 1996-01-17 | 2006-02-01 | 昌之 都田 | 洗浄方法 |
-
1996
- 1996-11-26 JP JP31519396A patent/JP3901265B2/ja not_active Expired - Fee Related
-
1997
- 1997-11-21 DE DE69736224T patent/DE69736224T2/de not_active Expired - Lifetime
- 1997-11-21 US US09/101,879 patent/US6343239B1/en not_active Expired - Fee Related
- 1997-11-21 KR KR1019980705631A patent/KR100295983B1/ko not_active Expired - Fee Related
- 1997-11-21 WO PCT/JP1997/004242 patent/WO1998024123A1/ja not_active Ceased
- 1997-11-21 EP EP97912528A patent/EP0889515B1/en not_active Expired - Lifetime
- 1997-11-24 TW TW086117595A patent/TW355176B/zh not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH053240A (ja) * | 1991-06-24 | 1993-01-08 | Tdk Corp | クリーン搬送方法及び装置 |
| JPH05275519A (ja) * | 1992-03-27 | 1993-10-22 | Toshiba Corp | 多室型基板処理装置 |
Non-Patent Citations (1)
| Title |
|---|
| See also references of EP0889515A4 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW355176B (en) | 1999-04-01 |
| JP3901265B2 (ja) | 2007-04-04 |
| DE69736224T2 (de) | 2007-05-10 |
| KR100295983B1 (ko) | 2001-08-07 |
| EP0889515B1 (en) | 2006-06-28 |
| JPH10163288A (ja) | 1998-06-19 |
| KR19990081918A (ko) | 1999-11-15 |
| EP0889515A4 (en) | 2004-10-20 |
| DE69736224D1 (de) | 2006-08-10 |
| EP0889515A1 (en) | 1999-01-07 |
| US6343239B1 (en) | 2002-01-29 |
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