WO1999045558A1 - Photolithographie en bleu et en ultraviolet realisee a l'aide de dispositifs illuminants organiques - Google Patents

Photolithographie en bleu et en ultraviolet realisee a l'aide de dispositifs illuminants organiques Download PDF

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Publication number
WO1999045558A1
WO1999045558A1 PCT/US1999/005008 US9905008W WO9945558A1 WO 1999045558 A1 WO1999045558 A1 WO 1999045558A1 US 9905008 W US9905008 W US 9905008W WO 9945558 A1 WO9945558 A1 WO 9945558A1
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WO
WIPO (PCT)
Prior art keywords
matrix
light
light source
light emitting
emitting devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1999/005008
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English (en)
Inventor
Gary W. Jones
Richard A. Campos
Joseph J. Destafeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FED Corp
eMagin Corp
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FED Corp
FED Corp USA
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Application filed by FED Corp, FED Corp USA filed Critical FED Corp
Priority to EP99911196A priority Critical patent/EP0980581A1/fr
Publication of WO1999045558A1 publication Critical patent/WO1999045558A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays

Definitions

  • the present invention relates to the field of lithography. More particularly, the present invention relates to the use of Organic Light Emitting Devices ("OLEDs”) as light sources for photolithography.
  • OLEDs Organic Light Emitting Devices
  • Lithography involves the process of forming patterns on a layer of photosensitive material, typically photoresist.
  • Photolithography is a type of lithography in which a light source is used to create the patterns on the photoresist layer. Light may either be projected directly onto the photo resist surface or projected through a mask. The mask is designed so that the light which passes through forms the desired pattern on the surface. Pressurized lamps, lasers, and any other sources of ultraviolet or infrared light may be used to create the patterns on the photoresist. The light sources normally are large and costly.
  • the photoresist layer cannot be exposed until the masks have been manufactured. This delay may affect the amount of time it takes for a new semiconductor product to reach the market.
  • Current processes generally require the use of large machinery and support systems. Most traditional light sources are housed in large immobile equipment.
  • a method of patterning a photosensitive surface comprising the steps of: providing a photosensitive surface to be patterned; and exposing the photosensitive surface to light emitted from a light source comprising an organic light emitting device.
  • the photosensitive surface may comprise photoresist material.
  • the light source may comprise either an actively or passively driven matrix of organic light emitting devices.
  • the light source may emit ultraviolet or blue light.
  • the OLED matrix may overlie a silicon substrate comprising integrated circuitry.
  • the matrix may be programmed to emit various patterns of light.
  • the matrix may be one-dimensional or two- dimensional.
  • the position of the photosensitive surface relative to the light source may be varied in order to pattern the surface during the step of exposing the photosensitive surface to light.
  • the step of exposing may include employing a plurality of the OLED matrices simultaneously.
  • the present invention includes a light source for patterning a photosensitive surface comprising: a matrix of organic light emitting devices; a silicon substrate underlying the matrix of organic light emitting devices, wherein the substrate comprises integrated circuitry capable of being programmed to provide different patterns of light emissions from the matrix.
  • the light source may include an actively or passively driven matrix.
  • the matrix may include microcavity forming structural elements.
  • the matrix may also comprise organic light emitting devices with polarizing elements and/or focusing elements.
  • the light source may include a matrix with frequency doubling materials for converting the light generated by organic material in the organic light emitting devices to blue or ultraviolet light.
  • the matrix may emit blue or ultraviolet light.
  • Figure 1 depicts a photolithographic system accordingto the present invention with an OLED light source.
  • Figure 2 depicts an alternative embodiment of a photolithographic system according to the present invention.
  • Figure 3 is a top view of a portion of the OLED matrix.
  • Fig. 1 discloses the photolithographic system 10 according to the present invention.
  • the system 10 comprises an OLED matrix 20; and photosensitive material to be patterned 40.
  • the OLED matrix 20 emits light downward onto the photosensitive material surface 44 developing away the photosensitive material.
  • the pattern emitted by the OLED matrix is duplicated on the photosensitive material 40.
  • Fig. 2 discloses an alternative embodiment of the present invention, which further includes a lens assembly 30.
  • the lens assembly functions to reduce the size of the emitted light image in order to increase the pattern density on the surface 44.
  • the lens assembly 30 may provide a factor of ten reduction.
  • the material 40 may comprise a silicon wafer 42 coated with a layer 41 of photosensitive material such as photoresist.
  • the photoresist layer 41 may be sensitive to light from any portion of the spectrum, however materials sensitive to blue or ultraviolet light are preferred.
  • the system 10 shown in Fig. 2 includes the movement of the material 40 as shown by arrow 50.
  • the material 40 is translated in the appropriate direction by a suitable mechanical system (not shown).
  • the system 10 may serve as one station in the larger assembly process for a semiconductor device. In that case, the material 40 may be moved away from the OLED matrix 20 to the next station. Alternatively, following an exposure to the OLED matrix 20 the material 40 may be re-oriented in place to allow for patterning of another section of the material 40.
  • Fig. 3 discloses a matrix section 22 of the OLED matrix 20.
  • the matrix section 22, when illuminated, defines the letter "F".
  • the illumination is provided by pixels 221, which contain organic light emitting material.
  • OLEDs are typically used in the area of flat panel displays. However, this same technology has the ability to deliver, through the inclusion of microcavity structures, a bright directed beam of visible light. This light can be generated by utilizing relatively simple and inexpensive vacuum evaporation techniques (for molecular crystal systems) or spin coating techniques (for polymeric systems).
  • the use of OLEDs to produce blue and ultraviolet light provides significant reductions in cost and size of photolithographic tools.
  • the system of the present invention may also be used to fabricate the masks required for current lithography processes.
  • the use of OLED technology in matrix form allows large-area patternability onto rigid or flexible substrates.
  • the OLED matrices which include blue or UV light generating organic materials are preferred for use as the matrix 20.
  • OLED matrices which include visible or infrared light emitting organic materials may be used in conjunction with frequency doubling or upconversion materials such as inorganic nonlinear crystals, or nonlinear polymers, to produce blue or ultraviolet light.
  • the OLED matrix 20 is normally constructed over a silicon substrate containing integrated circuitry. As a result, the OLED matrix 20 may be programmed. Programming may be used to project different patterns onto the photosensitive surface 44. As the projected light patterns change, the material 40 may be translated in order to rapidly pattern a large area. The capability of programming the OLED matrix eliminates the need for a mask, since the OLED matrix effectively functions as a programmable mask.
  • the matrix 20 may be either passively or actively driven.
  • the matrix 20 includes matrix lines which are capable of carrying current or voltage pulses of selected magnitudes. The pulses are provided to the matrix lines by drivers. The signals from the drivers pass to the OLED conductors through one of the matrix lines and the integrated circuitry located within the substrate. The signal from the driver provides current of varying magnitude to the conductors thereby determining whether or not each OLED or pixel cell is on, off, or at some intermediate gray level.
  • the integrated circuitry may be programmed in order to control the pattern of emitted light.
  • the matrix 20 may be either a one or two dimensional matrix. Use of a linear matrix or array requires moving or stepping either the material 40 or the matrix 20 in order to construct the pattern one line at a time. Multiple OLED matrices and multiple steppers may be used in order to rapidly pattern the photosensitive surface 40. The use of multiple OLED matrices will increase printing and patterning speed. The present invention may also include the use of reduction stepper technology to generate printed designs.
  • the present invention may include an OLED matrix of the type disclosed in U.S. Patent Application Serial No. 09/074,424, filed on May 8, 1998, and incorporated herein by reference.
  • the OLED matrix designs may include microcavity-forming structural elements, such as a reflective quarter-wave mirror stack of alternating oxide and nitride layers (e.g. SiO 2 /Si x N y and SiO 2 /TiO 2 ), which provide improved color purity and optical directionality.
  • the microcavity structure promotes harmonic generation by narrowing the spread of light.
  • the use of an OLED matrix with narrow light emissions may reduce the cost of any lensing system required for high resolution applications.
  • the OLED matrix 20 may further include polarizing elements at the pixel level. These polarizing elements may includepolarized solid-state organic emissive layers, which further promote harmonic generation and reduce power waste.
  • the OLED matrix 20 may also include focusing elements at the pixel level, such as microlenses.
  • Direct UN light may also be generated for photolithography by using an efficient green- emitting OLED produced by Kodak Corp.
  • the OLED structure may comprise the following layers: an indium-tin-oxide, or ITO, electrode on a suitable substrate such as glass; followed by vacuum depositions of a buffer layer of copper Phthalocyanine, CuPC; a hole transport layer comprising the diamine moleculeNPB; a doped organic layer comprising of aluminum quinoline, or ALQ, host with Coumarin 6 dye; an electron-transporting pure ALQ layer; and a Mg: Ag cathode layer.
  • a nonlinear frequency conversion crystal may be bonded to the glass substrate on the viewing side of the OLED device.
  • a polymer film capable of frequency upconversion may be spun on the glass viewing side in place of the nonlinear crystal.
  • a reflective multilayer stack may be deposited on the glass substrate prior to the ITO coating to provide microcavity effects.
  • the OLED matrix may include butyl- PBD or p-terphenyl to emit light with a wavelength near 365 nm.
  • Poly-(methylphenylsilane) may be used to emit light with a wavelength near 351 nm.
  • the deep blue light required for g-line lithography may be generated by including metal-free phthalocyanine (H 2 PC) with the OLED matrix.
  • the light emitted generally exhibits broad Q-band electroluminescence above 800 nm, peaking around 930 nm.
  • Fullerene crystals may also be used to emit light near the same wavelength region.
  • Other blue emitter material and structures are also acceptable.
  • the frequency of the light may be doubled into the g-line wavelength at 436 nm using the innovations described above for direct UV light generation.
  • Van Slyke et al. U.S. Patent Nos. 5,150,006 and 5,151,629, both incorporated herein by reference, disclose improved blue emitting OLED devices exhibiting greater efficiency and higher levels of stability as compared to conventional blue emitting OLED devices.
  • the OLED devices disclosed in the Van Slyke patents utilize substituted metal oxinoid compounds as emitters.
  • Matsuura et al. U.S. Patent No.5,503,910, incorporated herein by reference also discloses improved efficiency and stable blue emitting OLED devices.
  • Parahexaphenyl may be used as a blue light emitting material in organic EL devices as discussed by A. Niko, S. Tasch, F. Meghdadi, C. Brandstatter and G. Leising, "Red-green-blue emission of parahexaphenyl devices with color-converting media,” J. Appl. Phvs. 82 (1997), 4177- 4182, which is incorporated herein by reference.
  • Ultraviolet-emitting OLEDs are reportedin Akihito Fujii, Kenji Yoshimoto, Masayoshi Yoshida, Yutaka Ohmori and Katsumi Yoshino, "Ultraviolet electroluminescentdiode utilizing poly(methylphenylsilane),” Jpn.
  • An infrared emitting OLED may be produced by using films of metal-free phethalocyanine (H 2 Pc).
  • H 2 Pc metal-free phethalocyanine
  • the use of films of vacuum-sublimed fullerene (carbon 60) crystals is disclosed in A.
  • Discrete OLEDs may be arranged in matrix architectures.
  • the Idemitsu group demonstrated a low-resolution, 72x72 mm, 16x16 pixel color display using the broad blue emission from the organic molecule DPVBi together with color-changing media ("CCM") as reported in M. Matsuura, H. Tokailin, M. Eida, C. Hosokawa, Y. Hironata and T. Kusumoto, "Performance of RGB multicolor organic EL display," in Asia Display '95. p. 269. incorporated herein by reference.
  • CCM color-changing media
  • a passive polymeric display array of 20 ⁇ m x 20 ⁇ m pixels was fabricated using 193 nm excimer laser photoablation, S.
  • Standard OLED structures wherein the organic media are sandwiched between a transparent anode like indium-tin-oxide (ITO) and a reflective cathode such as Mg:Ag in a prescribed ratio, are capable of generating a broad angular distribution of light.
  • This type of distribution is characteristic of a Lambertian source (i.e., emitting light at all forward angles). It is also possible to promote greater directionality of light emission in the direction of the photosensitive surface by the creation of a microcavity structure through the inclusion of a second, highly reflective surface, near the transparent anode.
  • Use of a microcavity structure is described in the following publications, all of which are incorporated herein by reference: A. Dodabalapur, L.J.
  • Organic material may be assembled in structurally ordered films capable of generating polarized light, thereby realizing power economy in polarization-sensitive applications such as nonlinear frequency conversion.
  • the following references disclose the generation of polarized organic electroluminescence by using short-chain oligomers of well-known polymers: R.N. Marks, F. Biscarini, R. Zamboni and C. Taliani, "Polarized electroluminescence from vacuum-grown organic light-emitting diodes," Europhvs. Lett. 32 (1995) 523; and M. Era, T. Tsutsui and S. Saito, "Polarized electroluminescence from oriented p-sexiphenyl vacuum-deposited film," Appl. Phvs. Lett. 67 (1995) 2436-2438, both of which are incorporated herein by reference.
  • Inorganic crystals such as KTP, KDP, and LiNbO 3 are well-known materials used to promote frequency upconversion, or harmonic generation, due to their nonlinear optical coefficients.
  • poled polymers may equal or surpass the performance of the best inorganic crystalline materials: D.R. Ulrich, "Nonlinear optical polymer systems and devices," Mol. Crvst. Liq. Crvst. 160 (1988) 1-31, incorporated herein by reference.
  • Polymeric materials provide certain processing advantages which cannot be obtained from commercial inorganic materials.
  • the present invention employs the latest developments in OLED technology to photolithography. It will be apparent to those skilled in the art that various modifications and variations can be made in the construction, configuration, and/or operation of the present invention without departing from the scope or spirit of the invention. For example, various OLED and matrix designs may be employed as the light source without departing from the scope of the invention. Thus it is intended that the present invention covers modifications and variations of the invention provided they come within the scope of the appended claims and their equivalents.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Cette invention concerne un appareil de photolithographie et la technique afférente. Cet appareil repose sur l'utilisation d'un dispositif illuminant organique ('OLED') en tant que source lumineuse photolithographique. Il est possible d'utiliser une matrice programmable d'OLED pour produire une lumière bleue ou ultraviolette et ce, afin de constituer un motif sur une couche de matériau photosensible. Cette matrice d'OLED programmable peut être excitée de manière active ou passive.
PCT/US1999/005008 1998-03-05 1999-03-05 Photolithographie en bleu et en ultraviolet realisee a l'aide de dispositifs illuminants organiques Ceased WO1999045558A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP99911196A EP0980581A1 (fr) 1998-03-05 1999-03-05 Photolithographie en bleu et en ultraviolet realisee a l'aide de dispositifs illuminants organiques

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7690898P 1998-03-05 1998-03-05
US60/076,908 1998-03-05

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WO1999045558A1 true WO1999045558A1 (fr) 1999-09-10

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10001914A1 (de) * 2000-01-19 2001-07-26 Heidelberger Druckmasch Ag Verfahren und Vorrichtung zum Belichten von fotoempfindlichem Material
WO2002049854A1 (fr) * 2000-12-20 2002-06-27 Polaroid Corporation Tete d'impression monobloc a diode electroluminescente organique mettant en oeuvre des filtres couleurs
WO2002061809A3 (fr) * 2001-02-01 2003-01-09 Advanced Micro Devices Inc Dispositif de formation de motifs configurable et procede de production de circuits integres au moyen de ce dispositif
WO2002058935A3 (fr) * 2000-12-28 2003-07-24 Polaroid Corp Tete d'impression d'un seul tenant a fibres optiques et a diodes electroluminescentes organiques, dotee de filtres colores
WO2004006021A3 (fr) * 2002-07-08 2004-09-16 Zeiss Carl Smt Ag Dispositif optique comportant une source d'eclairage
DE102005031792A1 (de) * 2005-07-07 2007-01-11 Carl Zeiss Smt Ag Verfahren zur Entfernung von Kontamination von optischen Elementen, insbesondere von Oberflächen optischer Elemente sowie ein optisches System oder Teilsystem hierfür
US7245354B2 (en) * 2004-02-03 2007-07-17 Yuri Granik Source optimization for image fidelity and throughput
US7501753B2 (en) * 2005-08-31 2009-03-10 Lumination Llc Phosphor and blends thereof for use in LEDs
WO2016210357A1 (fr) * 2015-06-24 2016-12-29 Regents Of The University Of California Système flexible, non effractif, de surveillance en temps réel d'hématomes à l'aide de spectroscopie proche infrarouge
US20220069017A1 (en) * 2020-09-02 2022-03-03 Chengdu Boe Optoelectronics Technology Co., Ltd. Display panel and method for manufacturing same, and display apparatus

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US4928122A (en) * 1988-01-21 1990-05-22 Fuji Photo Film Co., Ltd. Exposure head
US5150006A (en) * 1991-08-01 1992-09-22 Eastman Kodak Company Blue emitting internal junction organic electroluminescent device (II)
US5503910A (en) * 1994-03-29 1996-04-02 Idemitsu Kosan Co., Ltd. Organic electroluminescence device
US5543830A (en) * 1990-10-12 1996-08-06 Minnesota Mining And Manufacturing Company Apparatus with light emitting element, microlens and gradient index lens characteristics for imaging continuous tone images
US5684368A (en) * 1996-06-10 1997-11-04 Motorola Smart driver for an array of LEDs
US5739896A (en) * 1995-02-03 1998-04-14 Eastman Kodak Company Method and apparatus for digitally printing and developing images onto photosensitive material
US5773194A (en) * 1995-09-08 1998-06-30 Konica Corporation Light sensitive composition, presensitized lithographic printing plate and image forming method employing the printing plate
US5840451A (en) * 1996-12-04 1998-11-24 Advanced Micro Devices, Inc. Individually controllable radiation sources for providing an image pattern in a photolithographic system
US5866922A (en) * 1996-12-23 1999-02-02 Motorola, Inc. Color display with integrated semiconductor leds and organic electroluminescent devices

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Publication number Priority date Publication date Assignee Title
US4928122A (en) * 1988-01-21 1990-05-22 Fuji Photo Film Co., Ltd. Exposure head
US5543830A (en) * 1990-10-12 1996-08-06 Minnesota Mining And Manufacturing Company Apparatus with light emitting element, microlens and gradient index lens characteristics for imaging continuous tone images
US5150006A (en) * 1991-08-01 1992-09-22 Eastman Kodak Company Blue emitting internal junction organic electroluminescent device (II)
US5503910A (en) * 1994-03-29 1996-04-02 Idemitsu Kosan Co., Ltd. Organic electroluminescence device
US5739896A (en) * 1995-02-03 1998-04-14 Eastman Kodak Company Method and apparatus for digitally printing and developing images onto photosensitive material
US5773194A (en) * 1995-09-08 1998-06-30 Konica Corporation Light sensitive composition, presensitized lithographic printing plate and image forming method employing the printing plate
US5684368A (en) * 1996-06-10 1997-11-04 Motorola Smart driver for an array of LEDs
US5840451A (en) * 1996-12-04 1998-11-24 Advanced Micro Devices, Inc. Individually controllable radiation sources for providing an image pattern in a photolithographic system
US5866922A (en) * 1996-12-23 1999-02-02 Motorola, Inc. Color display with integrated semiconductor leds and organic electroluminescent devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"ORGANIC LIGHT-EMITTING DEVICES FOR PHOTOLITHOGRAPHIC APPLICATIONS", RESEARCH DISCLOSURE., MASON PUBLICATIONS, HAMPSHIRE., GB, 1 April 1998 (1998-04-01), GB, pages COMPLETE, XP002920949, ISSN: 0374-4353 *

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10001914A1 (de) * 2000-01-19 2001-07-26 Heidelberger Druckmasch Ag Verfahren und Vorrichtung zum Belichten von fotoempfindlichem Material
WO2002049854A1 (fr) * 2000-12-20 2002-06-27 Polaroid Corporation Tete d'impression monobloc a diode electroluminescente organique mettant en oeuvre des filtres couleurs
US6801237B2 (en) 2000-12-20 2004-10-05 Polaroid Corporation Integral organic light emitting diode printhead utilizing color filters
US6856339B2 (en) 2000-12-20 2005-02-15 Polaroid Corporation Integral organic light emitting diode printhead utilizing color filters
US6879335B2 (en) 2000-12-20 2005-04-12 Polaroid Corporation Integral organic light emitting diode printhead utilizing color filters
WO2002058935A3 (fr) * 2000-12-28 2003-07-24 Polaroid Corp Tete d'impression d'un seul tenant a fibres optiques et a diodes electroluminescentes organiques, dotee de filtres colores
WO2002061809A3 (fr) * 2001-02-01 2003-01-09 Advanced Micro Devices Inc Dispositif de formation de motifs configurable et procede de production de circuits integres au moyen de ce dispositif
WO2004006021A3 (fr) * 2002-07-08 2004-09-16 Zeiss Carl Smt Ag Dispositif optique comportant une source d'eclairage
US9323161B2 (en) 2004-02-03 2016-04-26 Mentor Graphics Corporation Source optimization by assigning pixel intensities for diffractive optical element using mathematical relationship
US7245354B2 (en) * 2004-02-03 2007-07-17 Yuri Granik Source optimization for image fidelity and throughput
US7623220B2 (en) 2004-02-03 2009-11-24 Yuri Granik Source optimization for image fidelity and throughput
US10248028B2 (en) 2004-02-03 2019-04-02 Mentor Graphics Corporation Source optimization for image fidelity and throughput
DE102005031792A1 (de) * 2005-07-07 2007-01-11 Carl Zeiss Smt Ag Verfahren zur Entfernung von Kontamination von optischen Elementen, insbesondere von Oberflächen optischer Elemente sowie ein optisches System oder Teilsystem hierfür
US7501753B2 (en) * 2005-08-31 2009-03-10 Lumination Llc Phosphor and blends thereof for use in LEDs
WO2016210357A1 (fr) * 2015-06-24 2016-12-29 Regents Of The University Of California Système flexible, non effractif, de surveillance en temps réel d'hématomes à l'aide de spectroscopie proche infrarouge
US20220069017A1 (en) * 2020-09-02 2022-03-03 Chengdu Boe Optoelectronics Technology Co., Ltd. Display panel and method for manufacturing same, and display apparatus

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