WO2000003560A3 - Verfahren zur herstellung einer gefüllten vertiefung in einer materialschicht, sowie eine durch das verfahren erzeugte integrierte schaltungsanordnung - Google Patents
Verfahren zur herstellung einer gefüllten vertiefung in einer materialschicht, sowie eine durch das verfahren erzeugte integrierte schaltungsanordnung Download PDFInfo
- Publication number
- WO2000003560A3 WO2000003560A3 PCT/DE1999/002041 DE9902041W WO0003560A3 WO 2000003560 A3 WO2000003560 A3 WO 2000003560A3 DE 9902041 W DE9902041 W DE 9902041W WO 0003560 A3 WO0003560 A3 WO 0003560A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- material layer
- produced
- producing
- integrated circuit
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Measuring Fluid Pressure (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Weting (AREA)
Abstract
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE59914876T DE59914876D1 (de) | 1998-07-08 | 1999-07-02 | Verfahren zur herstellung einer integrierten schaltungsanordnung umfassend einen hohlraum in einer materialschicht, sowie eine durch das verfahren erzeugte integrierte schaltungsanordnung |
| EP99945888A EP1101389B1 (de) | 1998-07-08 | 1999-07-02 | Verfahren zur herstellung einer integrierten schaltungsanordnung umfassend einen hohlraum in einer materialschicht, sowie eine durch das verfahren erzeugte integrierte schaltungsanordnung |
| JP2000559711A JP2002520862A (ja) | 1998-07-08 | 1999-07-02 | 充填される凹部を材料層内に形成する方法、およびこの方法により形成される集積回路装置 |
| US09/756,532 US6724058B2 (en) | 1998-07-08 | 2001-01-08 | Method for producing a filled recess in a material layer, and an integrated circuit configuration produced by the method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19830535 | 1998-07-08 | ||
| DE19830535.4 | 1998-07-08 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/756,532 Continuation US6724058B2 (en) | 1998-07-08 | 2001-01-08 | Method for producing a filled recess in a material layer, and an integrated circuit configuration produced by the method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2000003560A2 WO2000003560A2 (de) | 2000-01-20 |
| WO2000003560A3 true WO2000003560A3 (de) | 2000-02-24 |
Family
ID=7873359
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/DE1999/002041 Ceased WO2000003560A2 (de) | 1998-07-08 | 1999-07-02 | Verfahren zur herstellung einer gefüllten vertiefung in einer materialschicht, sowie eine durch das verfahren erzeugte integrierte schaltungsanordnung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6724058B2 (de) |
| EP (1) | EP1101389B1 (de) |
| JP (1) | JP2002520862A (de) |
| AT (1) | ATE409398T1 (de) |
| DE (1) | DE59914876D1 (de) |
| WO (1) | WO2000003560A2 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1312241B1 (de) * | 2000-08-24 | 2004-03-17 | Fachhochschule Furtwangen | Elektrostatischer elektroakustischer wandler |
| US20040040504A1 (en) * | 2002-08-01 | 2004-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
| DE10247487A1 (de) * | 2002-10-11 | 2004-05-06 | Infineon Technologies Ag | Membran und Verfahren zu deren Herstellung |
| EA010388B1 (ru) * | 2003-01-31 | 2008-08-29 | Дау Корнинг Айэлэнд Лимитед | Электродный узел для генерации плазмы |
| KR20080005854A (ko) | 2006-07-10 | 2008-01-15 | 야마하 가부시키가이샤 | 압력 센서 및 그의 제조 방법 |
| US12253391B2 (en) | 2018-05-24 | 2025-03-18 | The Research Foundation For The State University Of New York | Multielectrode capacitive sensor without pull-in risk |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4753901A (en) * | 1985-11-15 | 1988-06-28 | Ncr Corporation | Two mask technique for planarized trench oxide isolation of integrated devices |
| EP0340524A1 (de) * | 1988-05-03 | 1989-11-08 | International Business Machines Corporation | Planarizierungsverfahren zur Isolation mit breiten Graben |
| US5324683A (en) * | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
| US5358891A (en) * | 1993-06-29 | 1994-10-25 | Intel Corporation | Trench isolation with planar topography and method of fabrication |
| US5665622A (en) * | 1995-03-15 | 1997-09-09 | International Business Machines Corporation | Folded trench and rie/deposition process for high-value capacitors |
| DE19636914A1 (de) * | 1996-09-11 | 1998-03-12 | Siemens Ag | Verfahren zum Auffüllen eines Grabens mit Hilfe eines anisotropen Ätzprozesses |
| EP0862207A1 (de) * | 1997-02-27 | 1998-09-02 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines DRAM-Grabenkondensators |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4211582A (en) | 1979-06-28 | 1980-07-08 | International Business Machines Corporation | Process for making large area isolation trenches utilizing a two-step selective etching technique |
| DE3727142C2 (de) * | 1987-08-14 | 1994-02-24 | Kernforschungsz Karlsruhe | Verfahren zur Herstellung von Mikrosensoren mit integrierter Signalverarbeitung |
| FR2700065B1 (fr) | 1992-12-28 | 1995-02-10 | Commissariat Energie Atomique | Procédé de fabrication d'accéléromètres utilisant la technologie silicium sur isolant. |
| US5395790A (en) | 1994-05-11 | 1995-03-07 | United Microelectronics Corp. | Stress-free isolation layer |
| US5374583A (en) | 1994-05-24 | 1994-12-20 | United Microelectronic Corporation | Technology for local oxidation of silicon |
| DE19509868A1 (de) * | 1995-03-17 | 1996-09-19 | Siemens Ag | Mikromechanisches Halbleiterbauelement |
| US5610431A (en) * | 1995-05-12 | 1997-03-11 | The Charles Stark Draper Laboratory, Inc. | Covers for micromechanical sensors and other semiconductor devices |
| JPH098039A (ja) | 1995-06-26 | 1997-01-10 | Oki Electric Ind Co Ltd | 埋め込み配線の形成方法及び埋め込み配線 |
| DE19648424C1 (de) * | 1996-11-22 | 1998-06-25 | Siemens Ag | Mikromechanischer Sensor |
| JP3274647B2 (ja) * | 1998-05-15 | 2002-04-15 | 日本電気株式会社 | 光半導体素子の実装構造 |
-
1999
- 1999-07-02 EP EP99945888A patent/EP1101389B1/de not_active Expired - Lifetime
- 1999-07-02 WO PCT/DE1999/002041 patent/WO2000003560A2/de not_active Ceased
- 1999-07-02 AT AT99945888T patent/ATE409398T1/de not_active IP Right Cessation
- 1999-07-02 JP JP2000559711A patent/JP2002520862A/ja not_active Withdrawn
- 1999-07-02 DE DE59914876T patent/DE59914876D1/de not_active Expired - Lifetime
-
2001
- 2001-01-08 US US09/756,532 patent/US6724058B2/en not_active Expired - Lifetime
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4753901A (en) * | 1985-11-15 | 1988-06-28 | Ncr Corporation | Two mask technique for planarized trench oxide isolation of integrated devices |
| EP0340524A1 (de) * | 1988-05-03 | 1989-11-08 | International Business Machines Corporation | Planarizierungsverfahren zur Isolation mit breiten Graben |
| US5324683A (en) * | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
| US5358891A (en) * | 1993-06-29 | 1994-10-25 | Intel Corporation | Trench isolation with planar topography and method of fabrication |
| US5665622A (en) * | 1995-03-15 | 1997-09-09 | International Business Machines Corporation | Folded trench and rie/deposition process for high-value capacitors |
| DE19636914A1 (de) * | 1996-09-11 | 1998-03-12 | Siemens Ag | Verfahren zum Auffüllen eines Grabens mit Hilfe eines anisotropen Ätzprozesses |
| EP0862207A1 (de) * | 1997-02-27 | 1998-09-02 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines DRAM-Grabenkondensators |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1101389A2 (de) | 2001-05-23 |
| DE59914876D1 (de) | 2008-11-06 |
| JP2002520862A (ja) | 2002-07-09 |
| ATE409398T1 (de) | 2008-10-15 |
| US6724058B2 (en) | 2004-04-20 |
| EP1101389B1 (de) | 2008-09-24 |
| WO2000003560A2 (de) | 2000-01-20 |
| US20010005032A1 (en) | 2001-06-28 |
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