WO2000004597A3 - Asymmetrisch sperrendes leistungshalbleiterbauelement - Google Patents

Asymmetrisch sperrendes leistungshalbleiterbauelement Download PDF

Info

Publication number
WO2000004597A3
WO2000004597A3 PCT/DE1999/002038 DE9902038W WO0004597A3 WO 2000004597 A3 WO2000004597 A3 WO 2000004597A3 DE 9902038 W DE9902038 W DE 9902038W WO 0004597 A3 WO0004597 A3 WO 0004597A3
Authority
WO
WIPO (PCT)
Prior art keywords
border
thickness
power semiconductor
semiconductor component
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE1999/002038
Other languages
English (en)
French (fr)
Other versions
WO2000004597A2 (de
Inventor
Hans-Joachim Schulze
Martin Ruff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to AU57267/99A priority Critical patent/AU5726799A/en
Priority to DE19981343A priority patent/DE19981343B4/de
Priority to DE19981343D priority patent/DE19981343D2/de
Publication of WO2000004597A2 publication Critical patent/WO2000004597A2/de
Publication of WO2000004597A3 publication Critical patent/WO2000004597A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

Ein innerhalb eines Halbleiterkörpers (1) lateral begrenzter, hoch dotierter Emitterbereich (2) ist von einem Randbereich (5) umgeben, der in der Stromrichtung eine geringere Dicke und/oder einen geringeren Gradienten der Dotierstoffkonzentration besitzt. Damit wird die elektrische Feldstärke am Rand reduziert. Der niedrig dotierte Basisbereich (8) hat im mittleren Teil eine zur Optimierung der elektrischen Parameter angepaßte geringere effektive Dicke als am Rand, so daß bei Dimensionierung auf punch through ein Durchbruch bei Betrieb in Sperrichtung im mittleren Teil auftritt.
PCT/DE1999/002038 1998-07-13 1999-07-02 Asymmetrisch sperrendes leistungshalbleiterbauelement Ceased WO2000004597A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU57267/99A AU5726799A (en) 1998-07-13 1999-07-02 Asymmetrically blocking power semiconductor component
DE19981343A DE19981343B4 (de) 1998-07-13 1999-07-02 Asymmetrisch sperrendes Leistungshalbleiterbauelement
DE19981343D DE19981343D2 (de) 1998-07-13 1999-07-02 Asymmetrisch sperrendes Leistungshalbleiterbauelement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19831337 1998-07-13
DE19831337.3 1998-07-13

Publications (2)

Publication Number Publication Date
WO2000004597A2 WO2000004597A2 (de) 2000-01-27
WO2000004597A3 true WO2000004597A3 (de) 2000-04-20

Family

ID=7873887

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1999/002038 Ceased WO2000004597A2 (de) 1998-07-13 1999-07-02 Asymmetrisch sperrendes leistungshalbleiterbauelement

Country Status (3)

Country Link
AU (1) AU5726799A (de)
DE (1) DE19981343B4 (de)
WO (1) WO2000004597A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10250608B4 (de) * 2002-10-30 2005-09-29 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Thyristorbauelement mit verbessertem Sperrverhalten in Rückwärtsrichtung
DE102004045768B4 (de) * 2004-09-21 2007-01-04 Infineon Technologies Ag Verfahren zur Herstellung eines Randabschlusses eines Halbleiterbauelements

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1464244A1 (de) * 1963-09-25 1969-01-02 Licentia Gmbh Halbleiteranordnung aus drei oder mehr Schichten abwechselnder Leitfaehigkeit
US3491272A (en) * 1963-01-30 1970-01-20 Gen Electric Semiconductor devices with increased voltage breakdown characteristics
EP0144876A2 (de) * 1983-12-07 1985-06-19 BBC Brown Boveri AG Halbleiterbauelement
EP0262356A2 (de) * 1986-09-30 1988-04-06 Siemens Aktiengesellschaft Verfahren zur Herstellung eines pn-Übergangs hoher Spannungsfestigkeit
EP0389863A1 (de) * 1989-03-29 1990-10-03 Siemens Aktiengesellschaft Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit
EP0725444A1 (de) * 1995-02-03 1996-08-07 Hitachi, Ltd. Thyristor und Verfahren zur Herstellung desselben

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3491272A (en) * 1963-01-30 1970-01-20 Gen Electric Semiconductor devices with increased voltage breakdown characteristics
DE1464244A1 (de) * 1963-09-25 1969-01-02 Licentia Gmbh Halbleiteranordnung aus drei oder mehr Schichten abwechselnder Leitfaehigkeit
EP0144876A2 (de) * 1983-12-07 1985-06-19 BBC Brown Boveri AG Halbleiterbauelement
EP0262356A2 (de) * 1986-09-30 1988-04-06 Siemens Aktiengesellschaft Verfahren zur Herstellung eines pn-Übergangs hoher Spannungsfestigkeit
EP0389863A1 (de) * 1989-03-29 1990-10-03 Siemens Aktiengesellschaft Verfahren zur Herstellung eines planaren pn-Übergangs hoher Spannungsfestigkeit
EP0725444A1 (de) * 1995-02-03 1996-08-07 Hitachi, Ltd. Thyristor und Verfahren zur Herstellung desselben

Also Published As

Publication number Publication date
DE19981343B4 (de) 2004-03-18
WO2000004597A2 (de) 2000-01-27
AU5726799A (en) 2000-02-07

Similar Documents

Publication Publication Date Title
US6977414B2 (en) Semiconductor device
US4837606A (en) Vertical MOSFET with reduced bipolar effects
US5719421A (en) DMOS transistor with low on-resistance and method of fabrication
TW374226B (en) Graded-channel semiconductor device and method of manufacturing the same
AU2002338615A1 (en) Power semiconductor devices and methods of forming same
US6232642B1 (en) Semiconductor device having impurity region locally at an end of channel formation region
EP1229589A3 (de) Hochspannungshalbleiterbauelement
GB2154794A (en) Vertical mosfet
KR970706614A (ko) Hv-ldmost 형의 반도체 소자(semiconductor device of hv-ldmost type)
EP0795911A3 (de) Halbleiterbauelement mit isoliertem Gate und Verfahren zu seiner Herstellung
DE59914922D1 (de) Leistungshalbleiterbauelement
WO2002099909A8 (en) Power mosfet having enhanced breakdown voltage
WO2002001644A3 (en) Power mosfet and methods of forming and operating the same
KR960035794A (ko) 엔모스(nmos) 집적회로장치에서 서브문턱전류를 감소시키는 큰 경사각도 붕소 이온주입 방법
ATE487235T1 (de) Halbleiteraufbau mit vergrabenem inselgebiet und kontaktgebiet
EP2214198A3 (de) Isolierte komplementär-mos-bauelemente in epi-losem substrat
WO2001071815A3 (en) High voltage semiconductor device having a field plate arrangement
WO2002084745A3 (en) Power semiconductor devices and methods of forming same
MY116040A (en) Low voltage active body semiconductor device
EP1468452A4 (de) Hochspannungs-leistungsmosfet enthält dotierte spalten
EP0789401A3 (de) LD-MOSFET oder MOSFET mit einer diese enthaltenden integrierten Schaltung und Verfahren zur Herstellung
CA2206346A1 (en) Contoured-tub fermi-threshold field effect transistor and method of forming same
WO2000079581A3 (en) Improving mosfet performance by employing an improved method for forming halo implants
WO1996015549A3 (en) Use of oblique implantation in forming base of bipolar transistor
WO2000072360A3 (de) Junctionisolierter lateral-mosfet für high-/low-side-schalter

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: CA

REF Corresponds to

Ref document number: 19981343

Country of ref document: DE

Date of ref document: 20021024

WWE Wipo information: entry into national phase

Ref document number: 19981343

Country of ref document: DE

REG Reference to national code

Ref country code: DE

Ref legal event code: 8607