WO2000073712A3 - Verfahren und vorrichtung zur gestaltung von thermoschenkeln mit schaumstrukturanteilen - Google Patents

Verfahren und vorrichtung zur gestaltung von thermoschenkeln mit schaumstrukturanteilen Download PDF

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Publication number
WO2000073712A3
WO2000073712A3 PCT/DE2000/001728 DE0001728W WO0073712A3 WO 2000073712 A3 WO2000073712 A3 WO 2000073712A3 DE 0001728 W DE0001728 W DE 0001728W WO 0073712 A3 WO0073712 A3 WO 0073712A3
Authority
WO
WIPO (PCT)
Prior art keywords
thermobranches
thermoelectric
foam structure
thermoelectrical
strips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2000/001728
Other languages
English (en)
French (fr)
Other versions
WO2000073712A2 (de
Inventor
Gunter Preiss
Hans Boellinghaus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DETTMANN BIRGIT
VTV VERFAHRENSTECHNIK WERWALTUNG GHBH
VTV VERFAHRENSTECH VERWALTUNG
Original Assignee
DETTMANN BIRGIT
VTV VERFAHRENSTECHNIK WERWALTUNG GHBH
VTV VERFAHRENSTECH VERWALTUNG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19925960A external-priority patent/DE19925960A1/de
Application filed by DETTMANN BIRGIT, VTV VERFAHRENSTECHNIK WERWALTUNG GHBH, VTV VERFAHRENSTECH VERWALTUNG filed Critical DETTMANN BIRGIT
Priority to AU59630/00A priority Critical patent/AU5963000A/en
Priority to EP00945576A priority patent/EP1144920A2/de
Publication of WO2000073712A2 publication Critical patent/WO2000073712A2/de
Publication of WO2000073712A3 publication Critical patent/WO2000073712A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/854—Thermoelectric active materials comprising inorganic compositions comprising only metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

Es werden neuartige Thermoschenkel (7) mit Schaumstrukturanteil und daraus resultierende, neuartige Anordnungen derselben in grenzschichtgeschäumten thermoelektrischen Strängen (28), druckkontaktierten thermoelektrischen Strängen (32) sowie übliche Verbundarten mit durchgehend geschäumten Thermoschenkeln (11), zusammengesetzten Thermoschenkeln (12) und integrierten Aktiv-Passiv-Thermoschenkeln (14) vorgestellt, die eine höhere Ausnutzung des thermoelektrischen Potentials bereits üblicher und eine Verwendung bislang als Thermoelektrika (3) nicht ausnutzbarer, halbleitender Stoffe mit Erfolg hohen thermoelektrischen Wirkungsgrades gestatten. Der insgesamte Schaumstrukturanteil ist verschiedenartig mit homogenen oder differenzierten Wirkphasenanteilen versehen und generell vorgesehen und befähigt, die wirkungsgradmindernden Verlustwärmeströme (8) zu minimieren. Es werden begleitende und nachformierende feldeffektive Verfahren zur Optimierung der thermoeleltroaktiven Wirkphasen (30) in sich bildenden oder aushärtenden, geschlossenzelligen Strukturen nichtmetallischer Schäume (31) oder Sinterverbände beschrieben. Anwendungsbereiche sind in der Thermostromerzeugung und Peltiertechnik gleichermassen vorgesehen.
PCT/DE2000/001728 1999-06-01 2000-05-30 Verfahren und vorrichtung zur gestaltung von thermoschenkeln mit schaumstrukturanteilen Ceased WO2000073712A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU59630/00A AU5963000A (en) 1999-06-01 2000-05-30 Method and device for forming thermobranches containing a foam structure
EP00945576A EP1144920A2 (de) 1999-06-01 2000-05-30 Verfahren und vorrichtung zur gestaltung von thermoschenkeln mit schaumstrukturanteilen

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19925960A DE19925960A1 (de) 1998-12-04 1999-06-01 Thermoschenkel mit Schaumstrukturanteil
DE19925960.7 1999-06-01

Publications (2)

Publication Number Publication Date
WO2000073712A2 WO2000073712A2 (de) 2000-12-07
WO2000073712A3 true WO2000073712A3 (de) 2001-08-23

Family

ID=7910458

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/001728 Ceased WO2000073712A2 (de) 1999-06-01 2000-05-30 Verfahren und vorrichtung zur gestaltung von thermoschenkeln mit schaumstrukturanteilen

Country Status (3)

Country Link
EP (1) EP1144920A2 (de)
AU (1) AU5963000A (de)
WO (1) WO2000073712A2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114386257B (zh) * 2021-12-28 2025-05-27 南京航空航天大学 强化被动散热型热电腿及其设计方法
CN114315353A (zh) * 2021-12-30 2022-04-12 吉林大学 一种P型(Bi,Sb)2Te3基多孔热电材料的可控制备方法
CN115188877B (zh) * 2022-07-27 2025-01-03 武汉理工大学 一种制备强织构和高热电性能柔性热电薄膜的方法
CN117574677B (zh) * 2023-12-18 2025-08-15 北京理工大学 一种提升粘接强度的结构骨架与胶混合接触胶接工艺方法

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0339715A1 (de) * 1988-04-27 1989-11-02 Theodorus Bijvoets Thermoelektrische Anordnung
JPH02106079A (ja) * 1988-10-14 1990-04-18 Ckd Corp 電熱変換素子
EP0455051A2 (de) * 1990-04-20 1991-11-06 Matsushita Electric Industrial Co., Ltd. Vakuumisolierter thermoelektrischer Halbleiter bestehend aus einer porösen Struktur und thermoelektrisches Bauelement
JPH043475A (ja) * 1990-04-20 1992-01-08 Matsushita Electric Ind Co Ltd 電子部品
JPH04199858A (ja) * 1990-11-29 1992-07-21 Matsushita Electric Ind Co Ltd 電子冷却パネル
US5275001A (en) * 1991-10-07 1994-01-04 Matsushita Electric Industrial Co., Ltd. Thermoelectric cooling device
US5411599A (en) * 1993-09-20 1995-05-02 The United States Of America As Represented The Secretary Of The Army Thermoelectric device utilizing nanoporous material
US5525162A (en) * 1995-06-26 1996-06-11 The United States Of America As Represented By The Secretary Of The Army Thermal conductivity enhancement technique
JPH08335721A (ja) * 1995-06-08 1996-12-17 Isuzu Motors Ltd ポーラス状熱発電素子の製造方法
JPH0969653A (ja) * 1995-08-31 1997-03-11 Isuzu Motors Ltd 熱電材料及びその製造方法
JPH1041556A (ja) * 1996-07-25 1998-02-13 Mitsubishi Heavy Ind Ltd 多孔質熱電半導体及びその製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0339715A1 (de) * 1988-04-27 1989-11-02 Theodorus Bijvoets Thermoelektrische Anordnung
JPH02106079A (ja) * 1988-10-14 1990-04-18 Ckd Corp 電熱変換素子
EP0455051A2 (de) * 1990-04-20 1991-11-06 Matsushita Electric Industrial Co., Ltd. Vakuumisolierter thermoelektrischer Halbleiter bestehend aus einer porösen Struktur und thermoelektrisches Bauelement
JPH043475A (ja) * 1990-04-20 1992-01-08 Matsushita Electric Ind Co Ltd 電子部品
JPH04199858A (ja) * 1990-11-29 1992-07-21 Matsushita Electric Ind Co Ltd 電子冷却パネル
US5275001A (en) * 1991-10-07 1994-01-04 Matsushita Electric Industrial Co., Ltd. Thermoelectric cooling device
US5411599A (en) * 1993-09-20 1995-05-02 The United States Of America As Represented The Secretary Of The Army Thermoelectric device utilizing nanoporous material
JPH08335721A (ja) * 1995-06-08 1996-12-17 Isuzu Motors Ltd ポーラス状熱発電素子の製造方法
US5525162A (en) * 1995-06-26 1996-06-11 The United States Of America As Represented By The Secretary Of The Army Thermal conductivity enhancement technique
JPH0969653A (ja) * 1995-08-31 1997-03-11 Isuzu Motors Ltd 熱電材料及びその製造方法
JPH1041556A (ja) * 1996-07-25 1998-02-13 Mitsubishi Heavy Ind Ltd 多孔質熱電半導体及びその製造方法

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 014, no. 320 (E - 0950) 10 July 1990 (1990-07-10) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 146 (E - 1188) 10 April 1992 (1992-04-10) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 530 (E - 1287) 30 October 1992 (1992-10-30) *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 04 30 April 1997 (1997-04-30) *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 07 31 July 1997 (1997-07-31) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 06 30 April 1998 (1998-04-30) *

Also Published As

Publication number Publication date
WO2000073712A2 (de) 2000-12-07
EP1144920A2 (de) 2001-10-17
AU5963000A (en) 2000-12-18

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