WO2001027571A3 - Halbleiterbauelement, elektronisches bauteil, sensorsystem und verfahren zur herstellung eines halbleiterbauelementes - Google Patents

Halbleiterbauelement, elektronisches bauteil, sensorsystem und verfahren zur herstellung eines halbleiterbauelementes Download PDF

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Publication number
WO2001027571A3
WO2001027571A3 PCT/DE2000/003727 DE0003727W WO0127571A3 WO 2001027571 A3 WO2001027571 A3 WO 2001027571A3 DE 0003727 W DE0003727 W DE 0003727W WO 0127571 A3 WO0127571 A3 WO 0127571A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor
component
semiconductor component
producing
sensor system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2000/003727
Other languages
English (en)
French (fr)
Other versions
WO2001027571A2 (de
Inventor
Tilman Weiss
Christoph Thiedig
Stefan Langer
Oliver Hilt
Hans Georg Koerner
Sebastian Stahn
Stephan Swientek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TWLUX HALBLEITERTECHNOLOGIEN BERLIN AG
TWLUX HALBLEITERTECHNOLOGIEN B
Original Assignee
TWLUX HALBLEITERTECHNOLOGIEN BERLIN AG
TWLUX HALBLEITERTECHNOLOGIEN B
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US10/110,805 priority Critical patent/US7432577B1/en
Application filed by TWLUX HALBLEITERTECHNOLOGIEN BERLIN AG, TWLUX HALBLEITERTECHNOLOGIEN B filed Critical TWLUX HALBLEITERTECHNOLOGIEN BERLIN AG
Priority to DE50012832T priority patent/DE50012832D1/de
Priority to DE10083108T priority patent/DE10083108D2/de
Priority to JP2001530536A priority patent/JP2003511867A/ja
Priority to EP00987011A priority patent/EP1232530B9/de
Priority to AU23452/01A priority patent/AU2345201A/en
Publication of WO2001027571A2 publication Critical patent/WO2001027571A2/de
Publication of WO2001027571A3 publication Critical patent/WO2001027571A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials

Landscapes

  • Light Receiving Elements (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

Diese Erfindung betrifft ein Halbleiterbauelement zur Detektion elektromagnetischer Strahlung mit einem Kontakt zwischen einem Metall und einem Halbleiter. Dabei weist der Halbleiter mindestens einen Metallchalkogenid-Verbindungshalbleiter als optisches Absorbermaterial auf oder ist ganz aus ihm gebildet. Dadurch wird ermöglicht, ein Bauelement zu schaffen, das in kostengünstiger Weise in besonders definierter Weise auf elektromagnetische Strahlungen reagiert. Dieses Halbleiterbauelement kann in einem elektronischen Bauteil und einem Sensorsystem verwendet werden. Ein erfindungsgemässes Verfahren zur Herstellung eines Halbleiterbauelements bringt ein Substrat mit einer Lösung in Kontakt, in der ein Precursor eines Metallchalkogenid-Verbindungshalbleiters gelöst und/oder suspendiert ist.
PCT/DE2000/003727 1999-10-15 2000-10-13 Halbleiterbauelement, elektronisches bauteil, sensorsystem und verfahren zur herstellung eines halbleiterbauelementes Ceased WO2001027571A2 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US10/110,805 US7432577B1 (en) 1999-10-15 2000-10-10 Semiconductor component for the detection of radiation, electronic component for the detection of radiation, and sensor system for electromagnetic radiation
DE50012832T DE50012832D1 (de) 1999-10-15 2000-10-13 Halbleiterbauelement, elektronisches bauteil, sensorsystem und verfahren zur herstellung eines halbleiterbauelementes
DE10083108T DE10083108D2 (de) 1999-10-15 2000-10-13 Halbleiterbauelement,elektronisches Bauteil,Sensorsystem und Verfahren zur Herstellung eines Halbleiterbauelementes
JP2001530536A JP2003511867A (ja) 1999-10-15 2000-10-13 半導体構成品、電子部品、センサシステム及び半導体構成品の製造方法
EP00987011A EP1232530B9 (de) 1999-10-15 2000-10-13 Halbleiterbauelement, elektronisches bauteil, sensorsystem und verfahren zur herstellung eines halbleiterbauelementes
AU23452/01A AU2345201A (en) 1999-10-15 2000-10-13 Semiconductor component, electronic component, sensor system and method for producing a semiconductor component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19951207.8 1999-10-15
DE19951207A DE19951207A1 (de) 1999-10-15 1999-10-15 Halbleiterbauelement

Publications (2)

Publication Number Publication Date
WO2001027571A2 WO2001027571A2 (de) 2001-04-19
WO2001027571A3 true WO2001027571A3 (de) 2001-10-25

Family

ID=7926714

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/003727 Ceased WO2001027571A2 (de) 1999-10-15 2000-10-13 Halbleiterbauelement, elektronisches bauteil, sensorsystem und verfahren zur herstellung eines halbleiterbauelementes

Country Status (7)

Country Link
US (1) US7432577B1 (de)
EP (1) EP1232530B9 (de)
JP (1) JP2003511867A (de)
AT (1) ATE327573T1 (de)
AU (1) AU2345201A (de)
DE (3) DE19951207A1 (de)
WO (1) WO2001027571A2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19951207A1 (de) 1999-10-15 2001-04-19 Twlux Halbleitertechnologien B Halbleiterbauelement
CA2442985C (en) * 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
AU2002312293A1 (en) 2002-01-04 2003-07-30 Rutgers, The State University Of New Jersey SCHOTTKY DIODE WITH SILVER LAYER CONTACTING THE ZnO AND MgxZn1-xO FILMS
DE10225606A1 (de) * 2002-06-07 2004-01-08 Daimlerchrysler Ag Halbleiterbauelement und Verfahren zur Herstellung
JP4491422B2 (ja) 2006-02-23 2010-06-30 セイコーエプソン株式会社 時計用文字板および時計
KR100988645B1 (ko) * 2008-10-13 2010-10-18 한국기계연구원 나노결정 양자점을 이용한 자외선 검출기
DE102009007908A1 (de) 2009-02-06 2010-08-12 Zylum Beteiligungsgesellschaft Mbh & Co. Patente Ii Kg Verfahren zur Herstellung eines Dünnschicht-Photovoltaik-Systems und Dünnschicht-Photovoltaik-System
DE102009030045B3 (de) * 2009-06-22 2011-01-05 Universität Leipzig Transparente gleichrichtende Metall-Metalloxid-Halbleiterkontaktstruktur und Verfahren zu seiner Herstellung und Verwendung
JP5800291B2 (ja) * 2011-04-13 2015-10-28 ローム株式会社 ＺｎＯ系半導体素子およびその製造方法
US8592935B2 (en) 2011-06-06 2013-11-26 The Hong Kong University Of Science And Technology MgS solar-blind UV radiation detector
EP2662864A1 (de) * 2012-05-08 2013-11-13 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Verfahren zur Verstärkung der Leitfähigkeit von transparentem Metalloxid
CN105934535A (zh) * 2014-01-31 2016-09-07 默克专利股份有限公司 制备uv光检测器的方法
US10957807B2 (en) * 2017-04-19 2021-03-23 The Board Of Trustees Of The University Of Alabama PLZT thin film capacitors apparatus with enhanced photocurrent and power conversion efficiency and method thereof
US12046623B2 (en) * 2020-08-07 2024-07-23 Redlen Technologies, Inc. Compound semiconductor x-ray detector tiles and method of dicing thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0364597A1 (de) * 1988-03-04 1990-04-25 Matsushita Electric Industrial Co., Ltd. Photoleitende zelle
JPH03241777A (ja) * 1989-11-15 1991-10-28 Mitsui Toatsu Chem Inc 光導電型紫外線センサー
WO1994000887A1 (en) * 1992-06-30 1994-01-06 Yeda Research And Development Co. Ltd. Photoelectrochemical cell including nanocrystalline semiconductor layer
DE4306407A1 (de) * 1993-03-02 1994-09-08 Abb Research Ltd Detektor
US5446286A (en) * 1994-08-11 1995-08-29 Bhargava; Rameshwar N. Ultra-fast detectors using doped nanocrystal insulators
JPH09325068A (ja) * 1996-06-05 1997-12-16 Osaka Gas Co Ltd 火炎センサ及び火炎検出器
EP1017110A1 (de) * 1998-12-29 2000-07-05 The Hong Kong University of Science & Technology UV-Strahlungsdetektoren, die im sichtbaren Bereich unempfindlich sind
DE19951207A1 (de) * 1999-10-15 2001-04-19 Twlux Halbleitertechnologien B Halbleiterbauelement

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0364597A1 (de) * 1988-03-04 1990-04-25 Matsushita Electric Industrial Co., Ltd. Photoleitende zelle
JPH03241777A (ja) * 1989-11-15 1991-10-28 Mitsui Toatsu Chem Inc 光導電型紫外線センサー
WO1994000887A1 (en) * 1992-06-30 1994-01-06 Yeda Research And Development Co. Ltd. Photoelectrochemical cell including nanocrystalline semiconductor layer
DE4306407A1 (de) * 1993-03-02 1994-09-08 Abb Research Ltd Detektor
US5446286A (en) * 1994-08-11 1995-08-29 Bhargava; Rameshwar N. Ultra-fast detectors using doped nanocrystal insulators
JPH09325068A (ja) * 1996-06-05 1997-12-16 Osaka Gas Co Ltd 火炎センサ及び火炎検出器
EP1017110A1 (de) * 1998-12-29 2000-07-05 The Hong Kong University of Science & Technology UV-Strahlungsdetektoren, die im sichtbaren Bereich unempfindlich sind
DE19951207A1 (de) * 1999-10-15 2001-04-19 Twlux Halbleitertechnologien B Halbleiterbauelement

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 016, no. 027 (E - 1158) 23 January 1992 (1992-01-23) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 04 31 March 1998 (1998-03-31) *
SOU ET AL: "Photoresponse stideis of ZnSSe visible-blind ultraviolet detectors: a comparison to ZnSTe detectors", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 75, no. 23, 6 December 1999 (1999-12-06), pages 3707 - 3709, XP002137215, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
EP1232530B9 (de) 2006-10-11
DE19951207A1 (de) 2001-04-19
EP1232530B1 (de) 2006-05-24
DE50012832D1 (de) 2006-06-29
EP1232530A2 (de) 2002-08-21
WO2001027571A2 (de) 2001-04-19
ATE327573T1 (de) 2006-06-15
JP2003511867A (ja) 2003-03-25
DE10083108D2 (de) 2003-09-11
AU2345201A (en) 2001-04-23
US7432577B1 (en) 2008-10-07

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