WO2002009126A3 - Structure de vanne de spin - Google Patents

Structure de vanne de spin Download PDF

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Publication number
WO2002009126A3
WO2002009126A3 PCT/US2001/022649 US0122649W WO0209126A3 WO 2002009126 A3 WO2002009126 A3 WO 2002009126A3 US 0122649 W US0122649 W US 0122649W WO 0209126 A3 WO0209126 A3 WO 0209126A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
accommodating buffer
buffer layer
oxide
silicon wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/022649
Other languages
English (en)
Other versions
WO2002009126A2 (fr
Inventor
Kurt Eisenbeiser
Jeffrey M Finder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to AU2001275978A priority Critical patent/AU2001275978A1/en
Publication of WO2002009126A2 publication Critical patent/WO2002009126A2/fr
Publication of WO2002009126A3 publication Critical patent/WO2002009126A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3213—Exchange coupling of magnetic semiconductor multilayers, e.g. MnSe/ZnSe superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Hall/Mr Elements (AREA)

Abstract

Cette invention concerne une structure de vanne de Spin à magnéto-résistance géante comportant des couches multiples de matériau ferromagnétique (26,30) et un matériau conducteur non magnétique (28) que l'on peut intégrer d'un bloc dans des circuits de silicium (50) en faisant dans un premier temps croître une couche tampon réceptrice (24) sur une tranche de silicium (22). La couche tampon réceptrice est constituée par une couche d'oxyde monocristallin qui est séparée de la tranche de silicium par une couche d'oxyde amorphe (32) de silice. La couche oxyde amorphe dissipe les contrainte et autorise la croissance d'une couche tampon réceptrice d'oxyde monocristallin de haute qualité. Cette couche tampon réceptrice est appariée au niveau de la grille tant avec la tranche de silicium sous-jacente qu'avec la couche ferromagnétique qui la recouvre. Toute inadéquation de grille entre la couche tampon réceptrice et le substrat de silicium sous-jacent es absorbée par la couche oxyde amorphe.
PCT/US2001/022649 2000-07-24 2001-07-18 Structure de vanne de spin Ceased WO2002009126A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001275978A AU2001275978A1 (en) 2000-07-24 2001-07-18 Spin valve structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62469000A 2000-07-24 2000-07-24
US09/624,690 2000-07-24

Publications (2)

Publication Number Publication Date
WO2002009126A2 WO2002009126A2 (fr) 2002-01-31
WO2002009126A3 true WO2002009126A3 (fr) 2002-06-27

Family

ID=24502943

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/022649 Ceased WO2002009126A2 (fr) 2000-07-24 2001-07-18 Structure de vanne de spin

Country Status (2)

Country Link
AU (1) AU2001275978A1 (fr)
WO (1) WO2002009126A2 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071118B2 (en) 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US8927403B2 (en) 2005-03-15 2015-01-06 Asm International N.V. Selective deposition of noble metal thin films
US9129897B2 (en) 2008-12-19 2015-09-08 Asm International N.V. Metal silicide, metal germanide, methods for making the same
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US9587307B2 (en) 2005-03-15 2017-03-07 Asm International N.V. Enhanced deposition of noble metals

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
JP4333900B2 (ja) * 2000-11-30 2009-09-16 エーエスエム インターナショナル エヌ．ヴェー． 磁気メモリセル、磁気構造体及び磁気素子の製造方法、並びに磁気構造体用金属層の成長方法
US6759081B2 (en) 2001-05-11 2004-07-06 Asm International, N.V. Method of depositing thin films for magnetic heads
US7037574B2 (en) 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
FR2921494B1 (fr) * 2007-09-20 2009-12-18 Saint Louis Inst Dispositif de mesure de l'induction magnetique comportant plusieurs bandes de film mince presentant des phenomenes de magnetoresistance colossale
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
KR102953798B1 (ko) 2020-06-24 2026-04-15 에이에스엠 아이피 홀딩 비.브이. 몰리브덴을 포함하는 막의 기상 증착

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340542A (ja) * 1998-05-27 1999-12-10 Sanyo Electric Co Ltd 磁気抵抗効果型素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11340542A (ja) * 1998-05-27 1999-12-10 Sanyo Electric Co Ltd 磁気抵抗効果型素子

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
DAUGHTON J M ET AL: "APPLICATIONS OF SPIN DEPENDENT TRANSPORT MATERIALS", JOURNAL OF PHYSICS D. APPLIED PHYSICS, IOP PUBLISHING, BRISTOL, GB, vol. 32, no. 22, 21 November 1999 (1999-11-21), pages R169 - R177, XP000947410, ISSN: 0022-3727 *
LI X W ET AL: "EPITAXIAL LA0.67SR0.33MNO3 MAGNETIC TUNNEL JUNCTIONS", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 81, no. 8, PART 2B, 15 April 1997 (1997-04-15), pages 5509 - 5511, XP000701274, ISSN: 0021-8979 *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 03 30 March 2000 (2000-03-30) *
ZHANG W ET AL: "STRESS EFFECT AND ENHANCED MAGNETORESISTANCE IN LA0.67CA0.33MNO3-DELTA FILMS", PHYSICAL REVIEW, B. CONDENSED MATTER, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 58, no. 21, PART 1, 1 December 1998 (1998-12-01), pages 14143 - 14146, XP000822984, ISSN: 0163-1829 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071118B2 (en) 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US8927403B2 (en) 2005-03-15 2015-01-06 Asm International N.V. Selective deposition of noble metal thin films
US9469899B2 (en) 2005-03-15 2016-10-18 Asm International N.V. Selective deposition of noble metal thin films
US9587307B2 (en) 2005-03-15 2017-03-07 Asm International N.V. Enhanced deposition of noble metals
US9129897B2 (en) 2008-12-19 2015-09-08 Asm International N.V. Metal silicide, metal germanide, methods for making the same
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide

Also Published As

Publication number Publication date
WO2002009126A2 (fr) 2002-01-31
AU2001275978A1 (en) 2002-02-05

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