WO2002031862A2 - Dispositif de chauffage rapide et uniforme d"un substrat par rayonnement infrarouge - Google Patents
Dispositif de chauffage rapide et uniforme d"un substrat par rayonnement infrarouge Download PDFInfo
- Publication number
- WO2002031862A2 WO2002031862A2 PCT/FR2001/003171 FR0103171W WO0231862A2 WO 2002031862 A2 WO2002031862 A2 WO 2002031862A2 FR 0103171 W FR0103171 W FR 0103171W WO 0231862 A2 WO0231862 A2 WO 0231862A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- lamps
- substrate
- heating device
- infrared radiation
- reflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0436—Apparatus for thermal treatment mainly by radiation
Definitions
- the invention relates to a device for heating a substrate, comprising infrared radiation lamps intended to ensure rapid heat treatment of the substrate inside a closed reaction chamber, which comprises a transparent window through which the said infrared radiation.
- the rapid thermal processes of RTP annealing and RTCVD vapor deposition generally make use of an infrared radiation oven generated by halogen lamps.
- the substrate for example made of silicon in the technologies for manufacturing microelectronics products, is installed under a controlled atmosphere, in a closed enclosure, and the infrared radiation is directed onto the surface face of the substrate through a transparent window.
- the temperatures reached during heat treatments can be high, often higher than 1000 ° C, with temperature rise rates likely to reach some 100 ° C / second.
- One of the important parameters of the treatment is the temperature uniformity over the entire surface of the treated substrate, since the presence of thermal gradients of a few degrees Celsius between the central zone and the peripheral zone of the substrate can cause differences in the quality of the substrate, and / or lack of uniformity in the physico-chemical properties of the layers present on the surface of the substrate.
- the energy lost on the edges of the substrate is higher than in the center, resulting in a lower temperature at the edge than in the center.
- US 6,108,491 relates to spot lamps, not linear lamps.
- the spot lamps are arranged in a circular manner below the substrate installed on a heating support (susceptor).
- the second series of lamps is arranged below, but on a smaller diameter to cover the central part of the heating support.
- Document WO 00 30157 relates to two series of UV lamps with an arrangement on the two faces of the reactor, and mounting at 90 °.
- the object of the invention consists in producing a heating device with controlled and directional infrared radiation, intended to carry out a rapid and uniform heat treatment of substrates of different geometries and dimensions.
- the infrared lamps are distributed over two superposed stages extending on the same side of the substrate, the lamps of the lower stage being arranged perpendicularly to the lamps of the upper stage,
- means for adjusting the power supply by groups of lamps provide greater heating at the edges than at the center of the substrate
- a reflector is shaped according to a distribution grid intended to reflect and channel the infrared radiation to control the power ratios between the different heating zones.
- the distribution grid of the reflector is constituted by an interlacing of blades delimiting a plurality of compartments of variable sections assigned to the heating zones.
- the blades are crossed at right angles, and are made of a material having an optimum reflection index for reflecting infrared rays.
- the material of the blades can be metallic (steel or aluminum) or non-metallic (ceramic, zircon).
- the lamps with infrared radiation are halogen lamps, and each stage advantageously comprises the same number of tubular lamps staggered at regular intervals extending parallel to one another.
- the reflector can be interposed between the lower stage of the lamps and the window, or be directly nested between the zones of the lamps, so as to cover the height of the two sets of lamps.
- FIG. 1 is a schematic view of a reactor equipped with the heating device according to the invention
- FIG. 2 shows a plan view of Figure 1;
- FIG. 3 shows the power distribution table by heating zones;
- FIG. 4 illustrates a perspective view of the reflector associated with a heating device with twelve lamps per stage
- FIG. 5 is an identical view to Figure 4 of an alternative embodiment.
- a heating device 10 with infrared radiation is used in the rapid thermal processes implemented in the technologies for manufacturing substrates of microelectronics. Other applications are possible for producing micro-sensors and solar energy panels.
- the substrate 12, for example made of silicon, is arranged in the middle zone of a reaction chamber 14 delimited by a closed enclosure 16, which is made of stainless steel or quartz.
- Pumping means 18 are connected to the enclosure 16 to work at atmospheric pressure, or lower the internal pressure of the reaction chamber 14 to secondary voids.
- a neutral or reactive gas flow 20 can be introduced by injection means 22 into the reaction chamber 14 to carry out treatments under an inert or reactive atmosphere, in particular annealing of the substrate 12, depositing thin layers on the exposed surface substrate 12 (CVD chemical vapor deposition technique), modification of the physicochemical properties of the surface, etc.
- the heating device 10 with infrared radiation makes it possible to obtain a rapid and uniform heat treatment of the entire exposed surface of the substrate 12.
- the heating device 10 is composed of two series of halogen lamps 24, 26 distributed tubular on two stages A and B superimposed inside a housing 28.
- the first lower stage A comprises a plurality of halogen lamps 24, for example six in Figures 1 to 3, staggered at regular intervals and extending parallel l to each other in the same shot.
- the second upper stage B is provided with an identical number of lamps 26 arranged perpendicularly to the lamps 24 of the first stage A, and in the same plane parallel to the first.
- the halogen lamps 24, 26 are supplied in groups by being connected to an interconnection circuit 30 connected to a supply device 32 with adjustable voltage for adjusting the radiated electric power in different heating zones.
- the six lamps 26 of stage B are supplied according to three zones 1, 2, 3.
- zone 1 is defined by the two lamps 26 at the ends, zone 2 by the two intermediate lamps 26, and zone 3 by the two internal lamps 26 juxtaposed.
- the six lamps 24 of stage A are supplied according to three other zones 4, 5, 6 orthogonal to zones 1, 2 3.
- Zone 4 is delimited by the two lamps 24 at the ends, zone 5 by the two intermediate lamps 24, and zone 6 by the two internal lamps 24.
- Adjusting the power in each of zones 1 to 6 makes it possible to compensate for the effects of radial thermal gradients linked to the thermal losses by convection on the edges of the substrate 12.
- the power profile in the different zones determines the image of the temperature at the surface of the substrate 12.
- a uniform temperature profile is obtained over the entire substrate 12 following compensation for the heat losses along the edges of the substrate 12.
- the structure illustrated in FIG. 2 makes it possible to obtain a power distribution:
- the enclosure 16 of the reaction chamber 14 is provided with a transparent porthole 34, for example made of quartz, allowing the infrared radiation emitted by the halogen lamps 24, 26 to pass from outside the enclosure 16.
- a reflector 36 In the interval located between the heating device 10 and the window 34, is arranged a reflector 36, intended to reflect the infrared radiation to control the power ratios between the different heating zones, given that the power necessary to compensate for the thermal differences between the center and edges of the substrate 12 vary with the temperature of the substrate 12.
- each stage A and B comprises twelve lamps (two lamps 24 being hidden to the left of stage A).
- the reflector 36 disposed under the housing of the lamps 24, 26, is shaped according to a distribution grid 38 constituted by an interlacing of four longitudinal blades 40 and four transverse blades 42, so as to define different quadrangular compartments open on the side of the window 34 and on the side of the lamps 24, 26.
- the compartments have variable sections assigned to each of the heating zones, thus making it possible to channel the light energy emitted by the different lighting zones of the lamps 24, 26 towards the corresponding zones of the substrate 12 .
- the crossed blades 40, 42 of the reflector 36 are made of a material having an optimum reflection index for reflecting infrared rays.
- the material can be non-metallic, for example ceramic or zircon-based. It is also possible to use a grid made of metallic material, for example steel, aluminum, possibly with a surface coating of gold or silver.
- the reflector 36 can advantageously be cooled by a heat transfer fluid.
- the compensation by heating zones is thus precisely controlled since the illumination zones of the substrate 12 are perfectly delimited by the reflector 36 to minimize the effects of interference between zones.
- the blades 142, 144 constituting the grid 138 of the reflector 136 are nested between the lamps 24, 26 so as to cover the height of the two series A and B. As a result, the zones of the lamps 24, 26 are completely framed in the screens.
Abstract
Description
Claims
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/148,339 US6759632B2 (en) | 2000-10-13 | 2001-10-12 | Device for fast and uniform heating substrate with infrared radiation |
| EP01976424A EP1250711B1 (fr) | 2000-10-13 | 2001-10-12 | Dispositif de chauffage rapide et uniforme d'un substrat par rayonnement infrarouge |
| CA2394426A CA2394426C (fr) | 2000-10-13 | 2001-10-12 | Dispositif de chauffage rapide et uniforme d'un substrat par rayonnement infrarouge |
| JP2002535156A JP2004511907A (ja) | 2000-10-13 | 2001-10-12 | 赤外線で急速かつ均一に基板を加熱する装置 |
| AU2001295702A AU2001295702A1 (en) | 2000-10-13 | 2001-10-12 | Device for fast and uniform heating of a substrate with infrared radiation |
| DE60133628T DE60133628T2 (de) | 2000-10-13 | 2001-10-12 | Vorrichtung zur schnellen und gleichmässigen heizung eines halbleitersubstrats durch infrarotstrahlung |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR00/13182 | 2000-10-13 | ||
| FR0013182A FR2815395B1 (fr) | 2000-10-13 | 2000-10-13 | Dispositif de chauffage rapide et uniforme d'un substrat par rayonnement infrarouge |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2002031862A2 true WO2002031862A2 (fr) | 2002-04-18 |
| WO2002031862A3 WO2002031862A3 (fr) | 2002-07-25 |
Family
ID=8855352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/FR2001/003171 Ceased WO2002031862A2 (fr) | 2000-10-13 | 2001-10-12 | Dispositif de chauffage rapide et uniforme d"un substrat par rayonnement infrarouge |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6759632B2 (fr) |
| EP (1) | EP1250711B1 (fr) |
| JP (1) | JP2004511907A (fr) |
| KR (1) | KR100832273B1 (fr) |
| CN (1) | CN1404623A (fr) |
| AT (1) | ATE392710T1 (fr) |
| AU (1) | AU2001295702A1 (fr) |
| CA (1) | CA2394426C (fr) |
| DE (1) | DE60133628T2 (fr) |
| FR (1) | FR2815395B1 (fr) |
| WO (1) | WO2002031862A2 (fr) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6734457B2 (en) * | 2001-11-27 | 2004-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US20060164614A1 (en) * | 2005-01-21 | 2006-07-27 | Hua-Kuo Chen | Exposing machine for a printed circuit board |
| US20070017395A1 (en) * | 2005-07-22 | 2007-01-25 | Neri Joel D | Method and apparatus for uniformly heating a substrate |
| JP2008071787A (ja) * | 2006-09-12 | 2008-03-27 | Ushio Inc | 光照射式加熱装置および光照射式加熱方法 |
| US7598150B2 (en) * | 2006-11-20 | 2009-10-06 | Applied Materials, Inc. | Compensation techniques for substrate heating processes |
| ITMO20060389A1 (it) * | 2006-11-22 | 2008-05-23 | Viv Int Spa | Apparati e metodo per decorare oggetti |
| JP5129756B2 (ja) * | 2006-12-01 | 2013-01-30 | 帝人ファイバー株式会社 | 高分子成形物への機能付与方法およびその装置 |
| US20080197493A1 (en) * | 2007-02-16 | 2008-08-21 | Stefan Geyer | Integrated circuit including conductive bumps |
| US7896053B2 (en) * | 2007-09-27 | 2011-03-01 | Babcock & Wilcox Services Y-12, LLC | Non-destructive component separation using infrared radiant energy |
| EP2271587A1 (fr) * | 2008-03-26 | 2011-01-12 | GT Solar Incorporated | Système et procédé de réacteur en polysilicium revêtu d or |
| KR101535547B1 (ko) * | 2008-09-05 | 2015-07-10 | 주성엔지니어링(주) | 기판 처리 장치 |
| US8232114B2 (en) * | 2009-01-27 | 2012-07-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | RTP spike annealing for semiconductor substrate dopant activation |
| US8404572B2 (en) | 2009-02-13 | 2013-03-26 | Taiwan Semiconductor Manufacturing Co., Ltd | Multi-zone temperature control for semiconductor wafer |
| US20110217848A1 (en) * | 2010-03-03 | 2011-09-08 | Bergman Eric J | Photoresist removing processor and methods |
| TWI399863B (zh) * | 2010-05-26 | 2013-06-21 | Inventec Solar Energy Corp | 快速升溫退火裝置及形成太陽能電池選擇性射極結構的方法 |
| NL2009189A (en) | 2011-08-17 | 2013-02-19 | Asml Netherlands Bv | Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method. |
| US9835957B2 (en) | 2013-09-27 | 2017-12-05 | Asml Netherlands B.V. | Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method |
| US11015244B2 (en) | 2013-12-30 | 2021-05-25 | Advanced Material Solutions, Llc | Radiation shielding for a CVD reactor |
| KR101809141B1 (ko) * | 2014-05-29 | 2018-01-19 | 에이피시스템 주식회사 | 히터 블록 및 기판 열처리 장치 |
| RU2580353C1 (ru) * | 2014-12-24 | 2016-04-10 | Общество с ограниченной ответственностью "Теркон-КТТ" | Способ выполнения прецизионных термических процессов в печи инфракрасного нагрева и печь инфракрасного нагрева для выполнения прецизионных термических процессов |
| JP6687436B2 (ja) * | 2015-04-30 | 2020-04-22 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
| KR101860631B1 (ko) * | 2015-04-30 | 2018-05-23 | 시바우라 메카트로닉스 가부시끼가이샤 | 기판 처리 장치 및 기판 처리 방법 |
| US10727094B2 (en) * | 2016-01-29 | 2020-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd | Thermal reflector device for semiconductor fabrication tool |
| JP6622617B2 (ja) * | 2016-02-18 | 2019-12-18 | 株式会社Screenホールディングス | 熱処理装置 |
| KR20230118174A (ko) * | 2020-12-22 | 2023-08-10 | 매슨 테크놀로지 인크 | 진공 어닐링 반사기 제어를 갖는 워크피스 프로세싱 장치 |
| CN116313923A (zh) * | 2022-12-27 | 2023-06-23 | 无锡诚承电子科技有限公司 | 一种快速合金退火炉的控温方法 |
| CN116705669B (zh) * | 2023-08-04 | 2023-10-20 | 盛吉盛半导体科技(北京)有限公司 | 一种冷却效果均匀的半导体设备用加热灯盘及冷却方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8602356A (nl) * | 1985-10-07 | 1987-05-04 | Epsilon Ltd Partnership | Inrichting en werkwijze voor een axiaal symmetrische reactor voor het chemische uit damp neerslaan. |
| US5155336A (en) * | 1990-01-19 | 1992-10-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
| US5444814A (en) * | 1993-11-01 | 1995-08-22 | Hofius, Sr.; David V. | Method of infrared welding on thermoplastic parts utilizing contoured energy reflecting shields |
| US5740314A (en) * | 1995-08-25 | 1998-04-14 | Edison Welding Institute | IR heating lamp array with reflectors modified by removal of segments thereof |
| US5951896A (en) * | 1996-12-04 | 1999-09-14 | Micro C Technologies, Inc. | Rapid thermal processing heater technology and method of use |
| KR100223549B1 (ko) * | 1996-12-28 | 1999-10-15 | 양재신 | 차량의 스페어 타이어 탈거장치 |
| US6316747B1 (en) * | 1998-03-02 | 2001-11-13 | Steag Rtp Systems Gmbh | Apparatus for the thermal treatment of substrates |
| US6108491A (en) * | 1998-10-30 | 2000-08-22 | Applied Materials, Inc. | Dual surface reflector |
| CN1155990C (zh) * | 1998-11-16 | 2004-06-30 | Fsi国际股份有限公司 | Uv基片加热和光化学的设备 |
| US6310328B1 (en) * | 1998-12-10 | 2001-10-30 | Mattson Technologies, Inc. | Rapid thermal processing chamber for processing multiple wafers |
| US6465761B2 (en) * | 2000-07-24 | 2002-10-15 | Asm America, Inc. | Heat lamps for zone heating |
-
2000
- 2000-10-13 FR FR0013182A patent/FR2815395B1/fr not_active Expired - Fee Related
-
2001
- 2001-10-12 AU AU2001295702A patent/AU2001295702A1/en not_active Abandoned
- 2001-10-12 JP JP2002535156A patent/JP2004511907A/ja not_active Withdrawn
- 2001-10-12 US US10/148,339 patent/US6759632B2/en not_active Expired - Fee Related
- 2001-10-12 KR KR1020027007453A patent/KR100832273B1/ko not_active Expired - Fee Related
- 2001-10-12 AT AT01976424T patent/ATE392710T1/de not_active IP Right Cessation
- 2001-10-12 EP EP01976424A patent/EP1250711B1/fr not_active Expired - Lifetime
- 2001-10-12 CN CN01803119A patent/CN1404623A/zh active Pending
- 2001-10-12 WO PCT/FR2001/003171 patent/WO2002031862A2/fr not_active Ceased
- 2001-10-12 DE DE60133628T patent/DE60133628T2/de not_active Expired - Lifetime
- 2001-10-12 CA CA2394426A patent/CA2394426C/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| AU2001295702A1 (en) | 2002-04-22 |
| CA2394426C (fr) | 2011-09-27 |
| FR2815395B1 (fr) | 2004-06-18 |
| KR100832273B1 (ko) | 2008-05-26 |
| KR20020059853A (ko) | 2002-07-13 |
| EP1250711A2 (fr) | 2002-10-23 |
| JP2004511907A (ja) | 2004-04-15 |
| ATE392710T1 (de) | 2008-05-15 |
| FR2815395A1 (fr) | 2002-04-19 |
| US20040052511A1 (en) | 2004-03-18 |
| WO2002031862A3 (fr) | 2002-07-25 |
| DE60133628T2 (de) | 2009-05-28 |
| EP1250711B1 (fr) | 2008-04-16 |
| US6759632B2 (en) | 2004-07-06 |
| DE60133628D1 (de) | 2008-05-29 |
| CA2394426A1 (fr) | 2002-04-18 |
| CN1404623A (zh) | 2003-03-19 |
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