ATE392710T1 - Vorrichtung zur schnellen und gleichmässigen heizung eines halbleitersubstrats durch infrarotstrahlung - Google Patents

Vorrichtung zur schnellen und gleichmässigen heizung eines halbleitersubstrats durch infrarotstrahlung

Info

Publication number
ATE392710T1
ATE392710T1 AT01976424T AT01976424T ATE392710T1 AT E392710 T1 ATE392710 T1 AT E392710T1 AT 01976424 T AT01976424 T AT 01976424T AT 01976424 T AT01976424 T AT 01976424T AT E392710 T1 ATE392710 T1 AT E392710T1
Authority
AT
Austria
Prior art keywords
lamps
substrate
infrared radiation
heating
quickly
Prior art date
Application number
AT01976424T
Other languages
English (en)
Inventor
Rene Ducret
Franck Laporte
Benoit Pierret
Bachir Semmache
Original Assignee
Qualiflow Therm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualiflow Therm filed Critical Qualiflow Therm
Application granted granted Critical
Publication of ATE392710T1 publication Critical patent/ATE392710T1/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90Thermal treatments, e.g. annealing or sintering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0436Apparatus for thermal treatment mainly by radiation
AT01976424T 2000-10-13 2001-10-12 Vorrichtung zur schnellen und gleichmässigen heizung eines halbleitersubstrats durch infrarotstrahlung ATE392710T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0013182A FR2815395B1 (fr) 2000-10-13 2000-10-13 Dispositif de chauffage rapide et uniforme d'un substrat par rayonnement infrarouge

Publications (1)

Publication Number Publication Date
ATE392710T1 true ATE392710T1 (de) 2008-05-15

Family

ID=8855352

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01976424T ATE392710T1 (de) 2000-10-13 2001-10-12 Vorrichtung zur schnellen und gleichmässigen heizung eines halbleitersubstrats durch infrarotstrahlung

Country Status (11)

Country Link
US (1) US6759632B2 (de)
EP (1) EP1250711B1 (de)
JP (1) JP2004511907A (de)
KR (1) KR100832273B1 (de)
CN (1) CN1404623A (de)
AT (1) ATE392710T1 (de)
AU (1) AU2001295702A1 (de)
CA (1) CA2394426C (de)
DE (1) DE60133628T2 (de)
FR (1) FR2815395B1 (de)
WO (1) WO2002031862A2 (de)

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US20070017395A1 (en) * 2005-07-22 2007-01-25 Neri Joel D Method and apparatus for uniformly heating a substrate
JP2008071787A (ja) * 2006-09-12 2008-03-27 Ushio Inc 光照射式加熱装置および光照射式加熱方法
US7598150B2 (en) * 2006-11-20 2009-10-06 Applied Materials, Inc. Compensation techniques for substrate heating processes
ITMO20060389A1 (it) * 2006-11-22 2008-05-23 Viv Int Spa Apparati e metodo per decorare oggetti
TW200846399A (en) * 2006-12-01 2008-12-01 Teijin Fibers Ltd Method of imparting function to molded polymer and apparatus therefor
US20080197493A1 (en) * 2007-02-16 2008-08-21 Stefan Geyer Integrated circuit including conductive bumps
US7896053B2 (en) * 2007-09-27 2011-03-01 Babcock & Wilcox Services Y-12, LLC Non-destructive component separation using infrared radiant energy
US20110159214A1 (en) * 2008-03-26 2011-06-30 Gt Solar, Incorporated Gold-coated polysilicon reactor system and method
KR101535547B1 (ko) * 2008-09-05 2015-07-10 주성엔지니어링(주) 기판 처리 장치
US8232114B2 (en) * 2009-01-27 2012-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. RTP spike annealing for semiconductor substrate dopant activation
US8404572B2 (en) 2009-02-13 2013-03-26 Taiwan Semiconductor Manufacturing Co., Ltd Multi-zone temperature control for semiconductor wafer
US20110217848A1 (en) * 2010-03-03 2011-09-08 Bergman Eric J Photoresist removing processor and methods
TWI399863B (zh) * 2010-05-26 2013-06-21 Inventec Solar Energy Corp 快速升溫退火裝置及形成太陽能電池選擇性射極結構的方法
NL2009189A (en) * 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
CN105683839B (zh) 2013-09-27 2017-08-08 Asml荷兰有限公司 用于光刻设备的支撑台、光刻设备以及器件制造方法
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
KR101809141B1 (ko) * 2014-05-29 2018-01-19 에이피시스템 주식회사 히터 블록 및 기판 열처리 장치
RU2580353C1 (ru) * 2014-12-24 2016-04-10 Общество с ограниченной ответственностью "Теркон-КТТ" Способ выполнения прецизионных термических процессов в печи инфракрасного нагрева и печь инфракрасного нагрева для выполнения прецизионных термических процессов
KR101860631B1 (ko) * 2015-04-30 2018-05-23 시바우라 메카트로닉스 가부시끼가이샤 기판 처리 장치 및 기판 처리 방법
JP6687436B2 (ja) * 2015-04-30 2020-04-22 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
US10727094B2 (en) * 2016-01-29 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd Thermal reflector device for semiconductor fabrication tool
JP6622617B2 (ja) * 2016-02-18 2019-12-18 株式会社Screenホールディングス 熱処理装置
CN116635992A (zh) * 2020-12-22 2023-08-22 玛特森技术公司 具有真空退火反射器控制的工件处理装置
CN116313923A (zh) * 2022-12-27 2023-06-23 无锡诚承电子科技有限公司 一种快速合金退火炉的控温方法
CN116705669B (zh) * 2023-08-04 2023-10-20 盛吉盛半导体科技(北京)有限公司 一种冷却效果均匀的半导体设备用加热灯盘及冷却方法

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Also Published As

Publication number Publication date
AU2001295702A1 (en) 2002-04-22
EP1250711B1 (de) 2008-04-16
WO2002031862A3 (fr) 2002-07-25
FR2815395A1 (fr) 2002-04-19
DE60133628T2 (de) 2009-05-28
WO2002031862A2 (fr) 2002-04-18
CA2394426A1 (en) 2002-04-18
CN1404623A (zh) 2003-03-19
US20040052511A1 (en) 2004-03-18
JP2004511907A (ja) 2004-04-15
FR2815395B1 (fr) 2004-06-18
KR20020059853A (ko) 2002-07-13
CA2394426C (en) 2011-09-27
DE60133628D1 (de) 2008-05-29
US6759632B2 (en) 2004-07-06
EP1250711A2 (de) 2002-10-23
KR100832273B1 (ko) 2008-05-26

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