WO2002096799A2 - Sous-nitrure de silicium - Google Patents

Sous-nitrure de silicium Download PDF

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Publication number
WO2002096799A2
WO2002096799A2 PCT/EP2002/005733 EP0205733W WO02096799A2 WO 2002096799 A2 WO2002096799 A2 WO 2002096799A2 EP 0205733 W EP0205733 W EP 0205733W WO 02096799 A2 WO02096799 A2 WO 02096799A2
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silicon
subnitride
silicide
reaction
weight
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WO2002096799A3 (fr
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Rüdiger KNIEP
Jörg HABERECHT
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Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
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Max Planck Gesellschaft zur Foerderung der Wissenschaften eV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3891—Silicides, e.g. molybdenum disilicide, iron silicide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38—Non-oxide ceramic constituents or additives
    • C04B2235/3895—Non-oxides with a defined oxygen content, e.g. SiOC, TiON
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/428—Silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/444—Halide containing anions, e.g. bromide, iodate, chlorite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/723—Oxygen content
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase

Definitions

  • the invention relates to a new silicon subnitride, a process for its production and the use of the subnitride according to the invention.
  • Si 3 N 4 The best known and most widely used silicon nitride is Si 3 N 4 , which has a wide range of uses as a ceramic material due to its resistance to temperature changes, strength and corrosion resistance.
  • a hydrolysis-sensitive silicon mononitride (SiN) x is known, which forms when the polymer silicon imide [Si 2 (NH) 3 ] x , which is accessible from Si 2 CI 6 and NH 3 , is heated.
  • a compound with two-dimensional infinite silicon layers is used as the silicide, preferably SrSi 2 , BaSi 2 , CaSi 2 and alkali metal or alkaline earth metal silicides with two-dimensional Si structures. Suitable Si structures are described, for example, by J. Evers et al., Z. Naturforsch.
  • the silicon subnitride according to the invention has material properties that are unique to semiconductors.
  • it has areas with two-dimensional ⁇ silicon. It particularly preferably includes
  • Layer thickness of 5-7 A, preferably 6-7 A, on the other hand, a layer-like material, formed from several superimposed structures, as shown in Figure 1, can be formed.
  • x can have values from 1 to practically any size, preferably values of at least 50, more preferably at least 1,000 and most preferably have at least 10,000 and up to 10 30 , more preferably up to 10 23 and particularly preferably up to 10 10 .
  • the preferred two-dimensionally structured structure of the silicon subnitride Si 2 N according to the invention thus consists of neutral, uncharged layers of about 6 A thickness. Measurements of the dielectric material properties show a dielectric constant e of about 4-6. The optical bandgap of the connection was determined by the diffuse reflection measurement to be 1.5 ⁇ 0.2 eV and is therefore in the range of typical semiconductors.
  • the silicon subnitride according to the invention particularly preferably consists exclusively of the elements Si and N and is free of impurities, in particular free of carbon and oxygen.
  • the content of elements other than Si and N is preferred, in particular the oxygen content is ⁇ 1% by weight, more preferably ⁇ 0.1% by weight and most preferably 0.01% by weight.
  • the silicon subnitride can contain up to 0.001% by weight of hydrogen.
  • the invention further comprises a method for producing the silicon subnitride according to the invention described above, which is characterized in that a silicide, in particular calcium disilicide (CaSi 2 ), is reacted with an ammonium halide, in particular ammonium bromide (NH 4 Br).
  • a silicide in particular calcium disilicide (CaSi 2 )
  • an ammonium halide in particular ammonium bromide (NH 4 Br).
  • the content of impurities in the calcium disilicide used is preferably ⁇ 0.5% by weight, more preferably ⁇ 1% by weight, for oxygen
  • Nitrogen preferably ⁇ 0.5% by weight, more preferably ⁇ 1% by weight and for
  • Carbon preferably ⁇ 0.5% by weight, more preferably ⁇ 0.2% by weight and most preferably 0.1% by weight.
  • Other impurities are in the
  • Calcium disilicide preferably in a proportion of ⁇ 1% by weight, more preferably ⁇ 0.1% by weight.
  • Calcium disilicide is> 40.5% by weight, more preferably> 41% by weight and most preferably 41.5% by weight (the theoretical content of calcium in
  • Siiicium in the educt calcium disilicide is preferably> 57% by weight, more preferably> 57.5% by weight and most preferably> 58.1% by weight (the theoretical content of silicon in 100% pure calcium disilicide is
  • the ammonium bromide used preferably has a total impurity content of ⁇ 2% by weight, more preferably ⁇ 1% by weight.
  • the proportion of oxygen in the ammonium bromide is preferably ⁇ 1.8 wt.
  • the CaBr 2 formed in addition to the desired Si 2 N or another salt when using other starting materials can, if desired, from the
  • the CaBr 2 (or another by-product formed) is preferably removed from the solid reaction mixture Extraction, for example with an organic solvent such as acetone or by sublimation, especially in vacuo, largely or completely removed.
  • the method is particularly preferably carried out in the absence of oxygen and in the absence of moisture.
  • Excluding oxygen here means that the proportion of oxygen in the reaction medium is ⁇ 1% by weight, more preferably ⁇ 0.1% by weight.
  • Excluding moisture means in particular that the reaction medium contains ⁇ 1% by weight, more preferably ⁇ 0.1% by weight of water or water vapor.
  • the reaction is particularly preferably carried out under an inert gas, for example under an inert gas such as argon, or in a nitrogen atmosphere.
  • the reaction temperatures are preferably 1 150 ° C, more preferably> 200 ° C, even more preferably> 300 ° C and up to 900 ° C, more preferably up to 800 ° C, in particular up to 700 ° C and particularly preferably up to 500 ° C. Most preferably, the reaction is carried out at a reaction temperature of 330-370 ° C. It was found that in this temperature range the reaction takes place completely in a relatively short time ( ⁇ 0.5 hours).
  • phase-pure silicide for example calcium disilicide
  • calcium disilicide in the TR6 modification
  • identity is achieved after six silicon layers.
  • silicide for example calcium silicide
  • a silicide for example calcium silicide
  • a silicide in particular a calcium disilicide, which contains less than 0.1% by weight, preferably less than 0.01% by weight, of impurities, in particular impurities from C, N and 0.
  • ammonium halide such as, for example, ammonium bromide
  • a silicide such as, for example, calcium disilicide
  • the oxygen content (oxygen serves as a reference value for H 2 O) of the ammonium halide used according to the invention is in particular ⁇ 1% by weight, oxygen, more preferably 0 0.1% by weight, based on the weight of the ammonium halide used. Residual moisture or water can be removed from ammonium halide, in particular from ammonium bromide, for example by thermal sublimation and freezing out of the water obtained.
  • the starting components are pure, in particular that the silicide used, in particular calcium silicide, is free of oxygen and that the ammonium halide, in particular ammonimbromide used, is water-free, and that the reaction is carried out with the exclusion of oxygen and moisture.
  • the starting materials that is to say the silicide and the ammonium halide
  • the silicide and the ammonium halide can both be mixed, for example, in powder form and then reacted at elevated temperature.
  • the silicon subnitride according to the invention is obtained in powder form.
  • the silicide in crystal form, in particular as a single crystal, and the ammonium halide on the surface of the crystals réellesublimieren.
  • the silicon subnitride is then formed epitaxially on the crystal surfaces of the silicide, for example the calcium disilicide.
  • the silicon subnitride is formed in a topotactic reaction, i.e. in a reaction which leads to a material with structural orientations which, in connection with the crystal orientations in the starting product, i.e. in the silicide, in particular in the Calcium disilicide.
  • the individual ⁇ -silicon layers of silicide for example CaSi 2 , are found as two-dimensional layers of ⁇ -Si in the silicon subnitride according to the invention.
  • a silicide in particular of calcium disilicide
  • substrates are, for example, silicon surfaces, in particular silicon wafers.
  • Calcium disilicides can be applied to substrates by methods known to those skilled in the art (see e.g. J.F. Morar et al., Physical Review B 37 (1 988), 261 8-2621).
  • the silicon subnitride according to the invention is formed, starting from silicide layers, for example calcium disilicide layers, on substrates or from silicide single crystals, for example calcium disilicide single crystals, ordered layers of the silicon subnitride are obtained.
  • silicide powders for example calcium disilicide powders
  • an X-ray amorphous silicon subnitride is obtained as a highly disperse but essentially two-dimensionally ordered solid with a small particle size.
  • the silicon subnitride according to the invention exhibits semiconductor properties and a high dielectric constant. It can therefore be used in particular in applications in which these properties are advantageous.
  • the invention therefore also includes the use of the silicon subnitride according to the invention as a dielectric. Due to its high dielectric constant, the silicon subnitride can be used in particular as a dielectric for memory modules, for example as a SiON replacement. Another area of application for the silicon subnitrides according to the invention is as a gate, in particular in CMOS technology.
  • the silicon subnitride can be used as a nano-insulator layer, for example by directly applying a silicide layer applied to a silicon substrate or another semiconductor, e.g. Calcium disilicide layer, is made with ammonium halide. Since monolayers with a layer thickness of about 6-7 A already have the desired material properties, in particular a high dielectric constant, very small components can be obtained here.
  • silicon subnitride is as a semiconductor in a nano or subnano transistor.
  • the semiconductor layer usually used in such transistors which consists, for example, of silicon with a thickness of 800 ⁇ m, can be replaced here by a monolayer of Si 2 N, which contains a single layer of ⁇ silicon.
  • Si 2 N which contains a single layer of ⁇ silicon.
  • the method according to the invention can also be used for the passivation of surfaces, in particular silicon surfaces, such as silicon wafers.
  • the saturation occurs "dangling bonds" without the need to introduce carbon or any other metal. It is also advantageous that such a passivated surface can be converted directly to SiO 2 layers with water vapor.
  • the silicon subnitride according to the invention is also outstandingly suitable for the production of ceramic materials. It can be used in particular as a precursor or precursor material for Si-N ceramics.
  • the silicon subnitride according to the invention is sintered at elevated temperatures, in particular at temperatures> 900 ° C., more preferably> 1000 ° C. and preferably up to 2000 ° C., more preferably up to 1500 ° C.
  • the silicon subnitride, which is stable at room temperature, is thermally decomposed.
  • Si 3 N 4 in particular a- and / or ⁇ -Si 3 N 4 , and Si under a protective gas atmosphere, for example argon or another noble gas, while pure Si 3 N 4 is formed under a nitrogen atmosphere or nitrogen-containing atmosphere.
  • a protective gas atmosphere for example argon or another noble gas
  • Figure 1 shows the structure of a monolayer of the invention
  • Si 2 N Silicon subnitride Si 2 N.
  • the layer thickness is 5.7 ⁇ , whereby a monolayer of ⁇ -Si (yellow circles) is surrounded by a layer containing Si and N at the top and bottom.
  • the Si 2 N layers can be arranged in accordance with the sphalerite type (top) or the rootite type (bottom). Between Layers there is a van der Waals distance or greater distance.
  • FIG. 2 illustrates the topochemical reaction starting from calcium disilicide to Si 2 N according to the invention.
  • FIG. 3 shows SiN images of calcium disilicide (FIG. 3A) and the Si 2 N obtainable therefrom by treatment with ammonium bromide at 350 ° C. (FIG. 3B).
  • FIG. 3A shows SiN images of calcium disilicide
  • FIG. 3B shows Si 2 N obtainable therefrom by treatment with ammonium bromide at 350 ° C.
  • FIG. 4 shows the dielectric material properties of Si 2 N.
  • FIG. 5 shows the semiconductor properties of Si 2 N, percent reflection versus the wavelength being plotted in nm.
  • FIG. 6 shows DTA / TG investigations on the course of the reaction and on thermal processes at higher temperatures, starting from CaSi 2 and NH 4 Br under argon.
  • FIG. 7 shows DTA / TG investigations on the course of the reaction and on thermal processes at higher temperatures starting from CaSi 2 and NH 4 Br under nitrogen.
  • Figure 8 shows the thermal resistance of the silicon subnitride
  • Calcium disilicide was produced from the elements in the induction furnace (glass carbon crucible; 60 seconds, 1000 ° C.) in a phase-pure manner in the TR6 modification (see J. Evers, dissertation, LMU Kunststoff, 1974).
  • the content of impurities from C, N and O in the calcium disilicide obtained is in each case less than 0.1% by weight.
  • the CaSi 2 that we synthesized consists solely of the CaSi 2 -TR6 phase according to X-ray studies.
  • the results of the chemical analyzes show that the self-made CaSi 2 is free of impurities.
  • Table 2 Analysis results of self-synthesized CaSi 2
  • ammonium bromide is purified by thermal sublimation and freezing of the water obtained with liquid nitrogen until the oxygen content is ⁇ 1.5% by weight.
  • ammonium bromide puratronic ® from Merck is the cleanest commercially available NH 4 Br.
  • Table 3 shows the results of the oxygen analysis of commercially available and cleaned ammonium bromide. The oxygen content was reduced to 1% by repeated vacuum sublimation and freezing of the water in liquid nitrogen.
  • the starting materials thus produced were ground in a protective gas atmosphere in an argon box and ground to a homogeneous mixture by means of a vibration mill in an agate grinding jar.
  • the chemical reaction was carried out in a niobium crucible at 350 ° C for 0.5 hours.
  • the calcium bromide was separated off by continuous extraction with acetone for 8 hours under an argon atmosphere or by applying a vacuum, for example 10 -5 mbar for 5 days at 800 ° C.
  • a reaction with the reaction parameters described above can also be carried out on single crystals of calcimdisilicide with previously sublimed ammonium bromide.
  • the described reaction can also be carried out on layers of calcium disilicide epitaxially applied to substrates (e.g. ⁇ -Si).
  • the temperature range for the reaction of Si 2 N and for the thermal decomposition of Si 2 N was determined.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un nouveau sous-nitrure de silicium, un procédé pour le produire et son utilisation.
PCT/EP2002/005733 2001-05-25 2002-05-24 Sous-nitrure de silicium Ceased WO2002096799A2 (fr)

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DE10125629A DE10125629A1 (de) 2001-05-25 2001-05-25 Siliciumsubnitrid
DE10125629.9 2001-05-25

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US9193595B2 (en) 2011-06-21 2015-11-24 Drexel University Compositions comprising free-standing two-dimensional nanocrystals
US10538431B2 (en) 2015-03-04 2020-01-21 Drexel University Nanolaminated 2-2-1 MAX-phase compositions
US10573768B2 (en) 2014-09-25 2020-02-25 Drexel University Physical forms of MXene materials exhibiting novel electrical and optical characteristics
US10720644B2 (en) 2015-04-20 2020-07-21 Drexel University Two-dimensional, ordered, double transition metals carbides having a nominal unit cell composition M′2M″nXn+1
US11278862B2 (en) 2017-08-01 2022-03-22 Drexel University Mxene sorbent for removal of small molecules from dialysate
US11470424B2 (en) 2018-06-06 2022-10-11 Drexel University MXene-based voice coils and active acoustic devices
US12635286B2 (en) 2024-06-17 2026-05-19 Drexel University Physical forms of MXene materials exhibiting novel electrical and optical characteristics

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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9193595B2 (en) 2011-06-21 2015-11-24 Drexel University Compositions comprising free-standing two-dimensional nanocrystals
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WO2013087561A3 (fr) * 2011-12-12 2013-09-12 Umicore Composite métallique céramique au sinx électroconducteur, cibles de pulvérisation cathodique correspondantes et procédés correspondants
EP2604587A1 (fr) * 2011-12-12 2013-06-19 Umicore Composite céramique SiNx conducteur électrique, cible pour pulvérisation cathodique, et leur méthodes de fabrication
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US10720644B2 (en) 2015-04-20 2020-07-21 Drexel University Two-dimensional, ordered, double transition metals carbides having a nominal unit cell composition M′2M″nXn+1
US11411218B2 (en) 2015-04-20 2022-08-09 Drexel University Two-dimensional, ordered, double transition metals carbides having a nominal unit cell composition M′2M″NXN+1
US12322800B2 (en) 2015-04-20 2025-06-03 Drexel University Two-dimensional, ordered, double transition metals carbides having a nominal unit cell composition m′2M″NXN+1
US11772066B2 (en) 2017-08-01 2023-10-03 Drexel University MXene sorbent for removal of small molecules from dialysate
US11278862B2 (en) 2017-08-01 2022-03-22 Drexel University Mxene sorbent for removal of small molecules from dialysate
US11470424B2 (en) 2018-06-06 2022-10-11 Drexel University MXene-based voice coils and active acoustic devices
US12629652B2 (en) 2023-07-17 2026-05-19 Drexel University MXene sorbent for removal of small molecules from dialysate
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