WO2003014428A3 - Procede d'obtention d'un monocristal de cdte ou de cdznte, et monocristal obtenu par ce procede - Google Patents

Procede d'obtention d'un monocristal de cdte ou de cdznte, et monocristal obtenu par ce procede Download PDF

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Publication number
WO2003014428A3
WO2003014428A3 PCT/FR2002/002816 FR0202816W WO03014428A3 WO 2003014428 A3 WO2003014428 A3 WO 2003014428A3 FR 0202816 W FR0202816 W FR 0202816W WO 03014428 A3 WO03014428 A3 WO 03014428A3
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
cdte
cdznte
obtaining
cdznte single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2002/002816
Other languages
English (en)
Other versions
WO2003014428A2 (fr
Inventor
Robert Georges Lucie Triboulet
Hassani Said Assoumani Said
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to US10/486,177 priority Critical patent/US7537659B2/en
Priority to EP02772489A priority patent/EP1415023B1/fr
Priority to DE60228455T priority patent/DE60228455D1/de
Publication of WO2003014428A2 publication Critical patent/WO2003014428A2/fr
Publication of WO2003014428A3 publication Critical patent/WO2003014428A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Insulating Materials (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

La présente invention se rapporte au domaine de l'obtention de monocristaux de CdTe ou de CdZnTe. Elle est relative à un procédé amélioré en phase solide pour l'obtention de cristaux de grande taille de CdZnTe ou de CdTe possédant une excellente structure cristalline.
PCT/FR2002/002816 2001-08-06 2002-08-06 Procede d'obtention d'un monocristal de cdte ou de cdznte, et monocristal obtenu par ce procede Ceased WO2003014428A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/486,177 US7537659B2 (en) 2001-08-06 2002-08-06 Method of obtaining a CdTe or CdZnTe single crystal and the single crystal thus obtained
EP02772489A EP1415023B1 (fr) 2001-08-06 2002-08-06 Procede d'obtention d'un monocristal de cdte ou de cdznte
DE60228455T DE60228455D1 (de) 2001-08-06 2002-08-06 Verfahren zur herstellung eines einkristalles aus cdte oder cdznte

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR01/10512 2001-08-06
FR0110512A FR2828214B1 (fr) 2001-08-06 2001-08-06 PROCEDE D'OBTENTION D'UN MONOCRISTAL DE CdTd OU DE CdZnTe, ET MONOCRISTAL OBTENU PAR CE PROCEDE

Publications (2)

Publication Number Publication Date
WO2003014428A2 WO2003014428A2 (fr) 2003-02-20
WO2003014428A3 true WO2003014428A3 (fr) 2003-11-06

Family

ID=8866324

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2002/002816 Ceased WO2003014428A2 (fr) 2001-08-06 2002-08-06 Procede d'obtention d'un monocristal de cdte ou de cdznte, et monocristal obtenu par ce procede

Country Status (6)

Country Link
US (1) US7537659B2 (fr)
EP (1) EP1415023B1 (fr)
AT (1) ATE405696T1 (fr)
DE (1) DE60228455D1 (fr)
FR (1) FR2828214B1 (fr)
WO (1) WO2003014428A2 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7316746B2 (en) 2005-03-18 2008-01-08 General Electric Company Crystals for a semiconductor radiation detector and method for making the crystals
CA2510415C (fr) * 2005-06-21 2012-08-14 Redlen Technologies Inc. Un procede avec reacteur a paroi froide pour melanger, homogeneiser et consolider des composes semiconducteurs
US7387948B2 (en) * 2005-08-04 2008-06-17 Grace Semiconductor Manufacturing Corporation Structure and method of forming a semiconductor material wafer
CN100379902C (zh) * 2006-08-16 2008-04-09 中国科学技术大学 碲化镉单晶的低温溶剂热生长方法
CA2726986C (fr) * 2008-06-06 2015-04-07 Ii-Vi Incorporated Recuit de cristaux de cdznte semi-isolant
US10351692B2 (en) 2014-10-17 2019-07-16 Plastipak Packaging, Inc. Oxygen scavengers, compositions comprising the scavengers, and articles made from the compositions
WO2019152585A2 (fr) * 2018-01-31 2019-08-08 Northwestern University Détermination et cartographie d'orientation par effet de canal d'électrons à balancement d'étage et reconstruction dans l'imagerie
CN109487339A (zh) * 2019-01-03 2019-03-19 西北工业大学 用于X射线成像的大面积CdZnTe单晶制备方法
CN111748847B (zh) * 2020-06-12 2021-11-05 中国电子科技集团公司第十一研究所 碲锌镉晶体配料方法
CN112680781B (zh) * 2020-12-09 2023-10-03 清远先导材料有限公司 碲化镉晶体生长装置及其生长方法
KR102737962B1 (ko) * 2022-10-18 2024-12-05 한국원자력연구원 단결정 성장 장치 및 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1013801A1 (fr) * 1998-12-21 2000-06-28 PIRELLI CAVI E SISTEMI S.p.A. Procédé et appareillage pour la croissance des cristaux

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207119A (en) * 1978-06-02 1980-06-10 Eastman Kodak Company Polycrystalline thin film CdS/CdTe photovoltaic cell
FR2502190A1 (fr) * 1981-03-18 1982-09-24 Telecommunications Sa Procede de preparation de cristaux de hg1-x cdx te
FR2593196B1 (fr) * 1986-01-21 1988-04-15 Telecommunications Sa Procede de preparation d'un lingot cristallin de hg1-xo cdxo te
US4923561A (en) * 1988-09-23 1990-05-08 American Telephone And Telegraph Company Crystal growth method
US5028296A (en) * 1989-09-15 1991-07-02 Texas Instruments Incorporated Annealing method
DE4132882C2 (de) * 1991-10-03 1996-05-09 Antec Angewandte Neue Technolo Verfahren zur Herstellung von pn CdTe/CdS-Dünnschichtsolarzellen
US6251701B1 (en) * 2000-03-01 2001-06-26 The United States Of America As Represented By The United States Department Of Energy All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof
FR2816755B1 (fr) * 2000-11-13 2002-12-20 Commissariat Energie Atomique Procede de croissance d'un materiau semi-conducteur massif de type ii-vi
US7175704B2 (en) * 2002-06-27 2007-02-13 Diamond Innovations, Inc. Method for reducing defect concentrations in crystals
US20050160979A1 (en) * 2004-01-26 2005-07-28 Real-Time Radiography Ltd. Method and apparatus for applying a polycrystalline film to a substrate
US7316746B2 (en) * 2005-03-18 2008-01-08 General Electric Company Crystals for a semiconductor radiation detector and method for making the crystals
CA2510415C (fr) * 2005-06-21 2012-08-14 Redlen Technologies Inc. Un procede avec reacteur a paroi froide pour melanger, homogeneiser et consolider des composes semiconducteurs

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1013801A1 (fr) * 1998-12-21 2000-06-28 PIRELLI CAVI E SISTEMI S.p.A. Procédé et appareillage pour la croissance des cristaux

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
BRUNET ET AL: "Horizontal Bridgman growth of large high quality Cd1-yZnyTe crystals", MATERIALS SCIENCE AND ENGINEERING B, vol. b16, LAUSANNE CH, pages 44 - 47, XP008002737 *
MELNIKOV A A ET AL: "Growth of CdZnTe single crystals for radiation detectors", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 197, no. 3, 15 February 1999 (1999-02-15), pages 666 - 669, XP004156440, ISSN: 0022-0248 *
MOKRI A ET AL: "Growth of large, high purity, low cost uniform CdZnTe crystals by the "cold travelling heater method"", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 138, no. 1/4, 2 April 1994 (1994-04-02), pages 168 - 174, XP000474526, ISSN: 0022-0248 *
ZAPPETTINI A ET AL: "A new process for synthesizing high-purity stoichiometric cadmium telluride", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 214-215, June 2000 (2000-06-01), pages 14 - 18, XP004200955, ISSN: 0022-0248 *
ZHU S-F S-F ET AL: "Modified growth of Cd1-xZnxTe single crystals", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 208, no. 1-4, 1 January 2000 (2000-01-01), pages 264 - 268, XP004253405, ISSN: 0022-0248 *

Also Published As

Publication number Publication date
DE60228455D1 (de) 2008-10-02
FR2828214A1 (fr) 2003-02-07
US20050115489A1 (en) 2005-06-02
EP1415023B1 (fr) 2008-08-20
EP1415023A2 (fr) 2004-05-06
WO2003014428A2 (fr) 2003-02-20
FR2828214B1 (fr) 2003-12-12
ATE405696T1 (de) 2008-09-15
US7537659B2 (en) 2009-05-26

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