WO2004090201A3 - Procede de fabrication de cristaux monocristallins - Google Patents

Procede de fabrication de cristaux monocristallins Download PDF

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Publication number
WO2004090201A3
WO2004090201A3 PCT/FR2004/000740 FR2004000740W WO2004090201A3 WO 2004090201 A3 WO2004090201 A3 WO 2004090201A3 FR 2004000740 W FR2004000740 W FR 2004000740W WO 2004090201 A3 WO2004090201 A3 WO 2004090201A3
Authority
WO
WIPO (PCT)
Prior art keywords
production
monocrystalline
crystals
monocrystalline crystals
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2004/000740
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English (en)
Other versions
WO2004090201A2 (fr
Inventor
Fabrice Letertre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Publication of WO2004090201A2 publication Critical patent/WO2004090201A2/fr
Publication of WO2004090201A3 publication Critical patent/WO2004090201A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

L'invention concerne un procédé de réalisation d'un cristal en un premier matériau monocristallin, comportant : - une étape d'assemblage d'un premier substrat (2) et d'au moins un film (4) ou d'au moins une couche en un second matériau monocristallin (6), - une étape de croissance dudit premier matériau sur le film ou la couche mince.
PCT/FR2004/000740 2003-03-31 2004-03-25 Procede de fabrication de cristaux monocristallins Ceased WO2004090201A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0303928 2003-03-31
FR0303928A FR2852974A1 (fr) 2003-03-31 2003-03-31 Procede de fabrication de cristaux monocristallins

Publications (2)

Publication Number Publication Date
WO2004090201A2 WO2004090201A2 (fr) 2004-10-21
WO2004090201A3 true WO2004090201A3 (fr) 2004-11-18

Family

ID=32947296

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2004/000740 Ceased WO2004090201A2 (fr) 2003-03-31 2004-03-25 Procede de fabrication de cristaux monocristallins

Country Status (3)

Country Link
US (1) US20040187766A1 (fr)
FR (1) FR2852974A1 (fr)
WO (1) WO2004090201A2 (fr)

Families Citing this family (40)

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US7079778B1 (en) * 2000-04-07 2006-07-18 Northrop Grumman Corporation Rugged shock-resistant backplane for embedded systems
US7407869B2 (en) 2000-11-27 2008-08-05 S.O.I.Tec Silicon On Insulator Technologies Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US20060005763A1 (en) 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
JP4384019B2 (ja) * 2004-12-08 2009-12-16 住友電気工業株式会社 ヘッドランプ
US8349077B2 (en) 2005-11-28 2013-01-08 Crystal Is, Inc. Large aluminum nitride crystals with reduced defects and methods of making them
US7641735B2 (en) * 2005-12-02 2010-01-05 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
US20090087645A1 (en) * 2006-01-12 2009-04-02 Sumitomo Electric Industries, Ltd. Method for Manufacturing Aluminum Nitride Crystal, Aluminum Nitride Crystal, Aluminum Nitride Crystal Substrate and Semiconductor Device
JP4451488B2 (ja) * 2006-03-28 2010-04-14 シャープ株式会社 半導体素子の転写方法及び半導体装置の製造方法
CN101454487B (zh) 2006-03-30 2013-01-23 晶体公司 氮化铝块状晶体的可控掺杂方法
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
US8980445B2 (en) * 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
WO2008088838A1 (fr) 2007-01-17 2008-07-24 Crystal Is, Inc. Réduction des défauts de croissance de cristaux de nitrure d'aluminium ensemencés
JP5730484B2 (ja) 2007-01-26 2015-06-10 クリスタル アイエス インコーポレイテッド 厚みのある擬似格子整合型の窒化物エピタキシャル層
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
JP5271279B2 (ja) 2007-02-08 2013-08-21 ソイテック 高熱消散基板を製造する方法
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
JP5303941B2 (ja) * 2008-01-31 2013-10-02 住友電気工業株式会社 ＡｌｘＧａ１−ｘＮ単結晶の成長方法
WO2010001804A1 (fr) * 2008-07-01 2010-01-07 住友電気工業株式会社 Procédé de production d'un monocristal d'alxga(1-x)n, monocristal d'alxga(1‑x)n et optiques
FR2939151A1 (fr) * 2008-12-01 2010-06-04 Soitec Silicon On Insulator Lingots formes d'au moins deux lingots elementaires, un procede de fabrication et une plaquette qui en est issue
JP5447206B2 (ja) 2010-06-15 2014-03-19 住友電気工業株式会社 炭化珪素単結晶の製造方法および炭化珪素基板
JP5806734B2 (ja) 2010-06-30 2015-11-10 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 熱勾配制御による窒化アルミニウム大単結晶成長
US8404562B2 (en) * 2010-09-30 2013-03-26 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
US8822306B2 (en) * 2010-09-30 2014-09-02 Infineon Technologies Ag Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
FR2977069B1 (fr) 2011-06-23 2014-02-07 Soitec Silicon On Insulator Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
FR2995136B1 (fr) * 2012-09-04 2015-06-26 Soitec Silicon On Insulator Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin
US9299880B2 (en) 2013-03-15 2016-03-29 Crystal Is, Inc. Pseudomorphic electronic and optoelectronic devices having planar contacts
TWI679320B (zh) 2013-08-08 2019-12-11 日商三菱化學股份有限公司 自立ＧａＮ基板、ＧａＮ結晶、ＧａＮ單結晶之製造方法及半導體裝置之製造方法
JP6477501B2 (ja) 2014-01-17 2019-03-06 三菱ケミカル株式会社 ＧａＮ基板、ＧａＮ基板の製造方法、ＧａＮ結晶の製造方法および半導体デバイスの製造方法
JP6129784B2 (ja) * 2014-05-26 2017-05-17 住友化学株式会社 Ｉｉｉ族窒化物基板の製造方法
DE112016000548B4 (de) * 2015-01-29 2020-10-15 Ngk Insulators, Ltd. Selbsttragendes Substrat, Verfahren zu dessen Herstellung und Verwendung des Substrats
US10364510B2 (en) * 2015-11-25 2019-07-30 Sciocs Company Limited Substrate for crystal growth having a plurality of group III nitride seed crystals arranged in a disc shape
EP3604214B1 (fr) * 2017-03-22 2022-11-16 NGK Insulators, Ltd. Particules de nitrure d'aluminium
EP4060098A1 (fr) * 2021-03-19 2022-09-21 SiCrystal GmbH Procédé de fabrication pour un monocristal volumique de sic à distribution non homogène de dislocation en vis et substrat sic

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WO1996041906A1 (fr) * 1995-06-13 1996-12-27 Advanced Technology Materials, Inc. Nitrure de gallium monocristallin volumineux et son procede de fabrication
EP0961312A2 (fr) * 1998-05-15 1999-12-01 Canon Kabushiki Kaisha Substrat du type SOI fabriqué par collage
JP2001253799A (ja) * 2000-03-10 2001-09-18 Nippon Pillar Packing Co Ltd 単結晶ＳｉＣ及びその製造方法
WO2001068957A1 (fr) * 2000-03-13 2001-09-20 Ii-Vi Incorporated Fabrication de monocristaux de grande dimension, a partir de germes cristallins, par intercroissance de ces germes disposes en mosaique
US6328796B1 (en) * 1999-02-01 2001-12-11 The United States Of America As Represented By The Secretary Of The Navy Single-crystal material on non-single-crystalline substrate
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EP1245702A2 (fr) * 2001-03-26 2002-10-02 Hitachi Cable, Ltd. Procédé de fabrication d'un substrat cristallin de nitrure de gallium
US20030036247A1 (en) * 2001-08-17 2003-02-20 Eriksen Odd Harald Steen Method of preparing a semiconductor using ion implantation in a sic layer

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JP2001253799A (ja) * 2000-03-10 2001-09-18 Nippon Pillar Packing Co Ltd 単結晶ＳｉＣ及びその製造方法
WO2001068957A1 (fr) * 2000-03-13 2001-09-20 Ii-Vi Incorporated Fabrication de monocristaux de grande dimension, a partir de germes cristallins, par intercroissance de ces germes disposes en mosaique
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EP1245702A2 (fr) * 2001-03-26 2002-10-02 Hitachi Cable, Ltd. Procédé de fabrication d'un substrat cristallin de nitrure de gallium
US20030036247A1 (en) * 2001-08-17 2003-02-20 Eriksen Odd Harald Steen Method of preparing a semiconductor using ion implantation in a sic layer

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Also Published As

Publication number Publication date
WO2004090201A2 (fr) 2004-10-21
FR2852974A1 (fr) 2004-10-01
US20040187766A1 (en) 2004-09-30

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