WO2003017374A3 - Speicherzelle - Google Patents

Speicherzelle Download PDF

Info

Publication number
WO2003017374A3
WO2003017374A3 PCT/DE2002/002759 DE0202759W WO03017374A3 WO 2003017374 A3 WO2003017374 A3 WO 2003017374A3 DE 0202759 W DE0202759 W DE 0202759W WO 03017374 A3 WO03017374 A3 WO 03017374A3
Authority
WO
WIPO (PCT)
Prior art keywords
control gate
drain
source
memory cell
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2002/002759
Other languages
English (en)
French (fr)
Other versions
WO2003017374A2 (de
Inventor
Franz Hofmann
Josef Willer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to JP2003522178A priority Critical patent/JP4481004B2/ja
Priority to KR1020047001792A priority patent/KR100679775B1/ko
Priority to EP02767055A priority patent/EP1415349A2/de
Publication of WO2003017374A2 publication Critical patent/WO2003017374A2/de
Publication of WO2003017374A3 publication Critical patent/WO2003017374A3/de
Priority to US10/779,557 priority patent/US6998672B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

Eine Speicherzelle weist auf: einen Source-Bereich, (304) einen Drain-Bereich (305), ein Source-seitiges Steuergate (315), ein Drain-seitiges Steuergate (316), ein zwischen dem Source-seitigen Steuergate (315) und dem Drain-seitigen Steuergate (316) angeordnetes Injektionsgate, (302) ein beim Source-seitigen Steuergate (315) angeordnetes Source-seitiges Speicherelement (311) und ein beim Drain-seitigen Steuergate (316) angeordnetes Drain-seitiges Speicherelement (312). Zum Programmieren der Speicherzelle wird an das Injektionsgate (302) eine niedrige und an die Steuergates eine hohe elektrische Spannung angelegt.
PCT/DE2002/002759 2001-08-06 2002-07-26 Speicherzelle Ceased WO2003017374A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003522178A JP4481004B2 (ja) 2001-08-06 2002-07-26 メモリーセルおよびメモリーセルに書込みを行う方法
KR1020047001792A KR100679775B1 (ko) 2001-08-06 2002-07-26 메모리 셀 및 그 프로그래밍 방법
EP02767055A EP1415349A2 (de) 2001-08-06 2002-07-26 Speicherzelle
US10/779,557 US6998672B2 (en) 2001-08-06 2004-02-06 Memory cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10138585A DE10138585A1 (de) 2001-08-06 2001-08-06 Speicherzelle
DE10138585.4 2001-08-06

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/779,557 Continuation US6998672B2 (en) 2001-08-06 2004-02-06 Memory cell

Publications (2)

Publication Number Publication Date
WO2003017374A2 WO2003017374A2 (de) 2003-02-27
WO2003017374A3 true WO2003017374A3 (de) 2003-05-30

Family

ID=7694577

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/002759 Ceased WO2003017374A2 (de) 2001-08-06 2002-07-26 Speicherzelle

Country Status (8)

Country Link
US (1) US6998672B2 (de)
EP (1) EP1415349A2 (de)
JP (1) JP4481004B2 (de)
KR (1) KR100679775B1 (de)
CN (1) CN1539170A (de)
DE (1) DE10138585A1 (de)
TW (1) TW556320B (de)
WO (1) WO2003017374A2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7184315B2 (en) 2003-11-04 2007-02-27 Micron Technology, Inc. NROM flash memory with self-aligned structural charge separation
US7202523B2 (en) 2003-11-17 2007-04-10 Micron Technology, Inc. NROM flash memory devices on ultrathin silicon
JP2008053270A (ja) * 2006-08-22 2008-03-06 Nec Electronics Corp 半導体記憶装置、及びその製造方法
KR100846393B1 (ko) * 2007-03-30 2008-07-15 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 및 그 제조 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148434A (ja) * 1999-10-12 2001-05-29 New Heiro:Kk 不揮発性メモリセルおよびその使用方法、製造方法ならびに不揮発性メモリアレイ
US6388293B1 (en) * 1999-10-12 2002-05-14 Halo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, operating method of the same and nonvolatile memory array

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JPS6418270A (en) * 1987-07-13 1989-01-23 Oki Electric Ind Co Ltd Semiconductor memory device
US5219774A (en) * 1988-05-17 1993-06-15 Xicor, Inc. Deposited tunneling oxide
US5270559A (en) * 1990-10-15 1993-12-14 California Institute Of Technology Method and apparatus for making highly accurate potential well adjustments in CCD's
US5284784A (en) * 1991-10-02 1994-02-08 National Semiconductor Corporation Buried bit-line source-side injection flash memory cell
JPH0613627A (ja) * 1991-10-08 1994-01-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US5910912A (en) * 1992-10-30 1999-06-08 International Business Machines Corporation Flash EEPROM with dual-sidewall gate
US6057575A (en) * 1996-03-18 2000-05-02 Integrated Memory Technologies, Inc. Scalable flash EEPROM memory cell, method of manufacturing and operation thereof
US5963806A (en) * 1996-12-09 1999-10-05 Mosel Vitelic, Inc. Method of forming memory cell with built-in erasure feature
JP3264365B2 (ja) * 1997-03-28 2002-03-11 ローム株式会社 不揮発性記憶素子
US5900657A (en) * 1997-05-19 1999-05-04 National Semiconductor Corp. MOS switch that reduces clock feed through in a switched capacitor circuit
US6281545B1 (en) * 1997-11-20 2001-08-28 Taiwan Semiconductor Manufacturing Company Multi-level, split-gate, flash memory cell
US6091101A (en) * 1998-03-30 2000-07-18 Worldwide Semiconductor Manufacturing Corporation Multi-level flash memory using triple well
US6043530A (en) * 1998-04-15 2000-03-28 Chang; Ming-Bing Flash EEPROM device employing polysilicon sidewall spacer as an erase gate
US5991204A (en) * 1998-04-15 1999-11-23 Chang; Ming-Bing Flash eeprom device employing polysilicon sidewall spacer as an erase gate
US6093945A (en) * 1998-07-09 2000-07-25 Windbond Electronics Corp. Split gate flash memory with minimum over-erase problem
US6107139A (en) * 1998-07-17 2000-08-22 Worldwide Semiconductor Manufacturing Corporation Method for making a mushroom shaped DRAM capacitor
KR100297720B1 (ko) * 1998-10-19 2001-08-07 윤종용 플래쉬메모리셀및그제조방법
US6313500B1 (en) * 1999-01-12 2001-11-06 Agere Systems Guardian Corp. Split gate memory cell
JP3973819B2 (ja) * 1999-03-08 2007-09-12 株式会社東芝 半導体記憶装置およびその製造方法
US6228695B1 (en) * 1999-05-27 2001-05-08 Taiwan Semiconductor Manufacturing Company Method to fabricate split-gate with self-aligned source and self-aligned floating gate to control gate
US6504207B1 (en) * 2000-06-30 2003-01-07 International Business Machines Corporation Method to create EEPROM memory structures integrated with high performance logic and NVRAM, and operating conditions for the same
DE10036911C2 (de) * 2000-07-28 2002-06-06 Infineon Technologies Ag Verfahren zur Herstellung einer Multi-Bit-Speicherzelle

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148434A (ja) * 1999-10-12 2001-05-29 New Heiro:Kk 不揮発性メモリセルおよびその使用方法、製造方法ならびに不揮発性メモリアレイ
US6388293B1 (en) * 1999-10-12 2002-05-14 Halo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, operating method of the same and nonvolatile memory array

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HAYASHI Y ET AL: "TWIN MONOS CELL WITH DUAL CONTROL GATES", 2000 SYMPOSIUM ON VLSI TECHNOLOGY. DIGEST OF TECHNICAL PAPERS. HONOLULU, JUNE 13-15, 2000, SYMPOSIUM ON VLSI TECHNOLOGY, NEW YORK, NY: IEEE, US, 13 June 2000 (2000-06-13), pages 122 - 123, XP000970787, ISBN: 0-7803-6306-X *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 22 9 March 2001 (2001-03-09) *

Also Published As

Publication number Publication date
KR100679775B1 (ko) 2007-02-06
WO2003017374A2 (de) 2003-02-27
KR20040023718A (ko) 2004-03-18
EP1415349A2 (de) 2004-05-06
DE10138585A1 (de) 2003-03-06
JP2004538662A (ja) 2004-12-24
JP4481004B2 (ja) 2010-06-16
TW556320B (en) 2003-10-01
US20040183125A1 (en) 2004-09-23
CN1539170A (zh) 2004-10-20
US6998672B2 (en) 2006-02-14

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