WO2003071578A3 - Materialbearbeitungssystem, materialbearbeitungsverfahren und gaszuführung hierfür - Google Patents
Materialbearbeitungssystem, materialbearbeitungsverfahren und gaszuführung hierfür Download PDFInfo
- Publication number
- WO2003071578A3 WO2003071578A3 PCT/EP2003/001923 EP0301923W WO03071578A3 WO 2003071578 A3 WO2003071578 A3 WO 2003071578A3 EP 0301923 W EP0301923 W EP 0301923W WO 03071578 A3 WO03071578 A3 WO 03071578A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- material treating
- gas supply
- reaction gas
- treating
- work piece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/16—Vessels
- H01J2237/162—Open vessel, i.e. one end sealed by object or workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/16—Vessels
- H01J2237/166—Sealing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31742—Etching microareas for repairing masks
- H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003570383A JP4058002B2 (ja) | 2002-02-25 | 2003-02-25 | 材料加工システム |
| EP03742580A EP1479091A2 (de) | 2002-02-25 | 2003-02-25 | Materialbearbeitungssystem, materialbearbeitungsverfahren und gaszufuehrung hierfuer |
| US10/923,814 US20050103272A1 (en) | 2002-02-25 | 2004-08-24 | Material processing system and method |
| US11/499,776 US7435973B2 (en) | 2002-02-25 | 2006-08-07 | Material processing system and method |
| US12/232,972 US7868290B2 (en) | 2002-02-25 | 2008-09-26 | Material processing system and method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10208043.7 | 2002-02-25 | ||
| DE2002108043 DE10208043B4 (de) | 2002-02-25 | 2002-02-25 | Materialbearbeitungssystem und Materialbearbeitungsverfahren |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/923,814 Continuation US20050103272A1 (en) | 2002-02-25 | 2004-08-24 | Material processing system and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2003071578A2 WO2003071578A2 (de) | 2003-08-28 |
| WO2003071578A3 true WO2003071578A3 (de) | 2004-01-08 |
Family
ID=27740398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2003/001923 Ceased WO2003071578A2 (de) | 2002-02-25 | 2003-02-25 | Materialbearbeitungssystem, materialbearbeitungsverfahren und gaszuführung hierfür |
Country Status (4)
| Country | Link |
|---|---|
| EP (2) | EP1892748B1 (de) |
| JP (1) | JP4058002B2 (de) |
| DE (1) | DE10208043B4 (de) |
| WO (1) | WO2003071578A2 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101101558B1 (ko) | 2004-04-15 | 2012-01-02 | 나우테크 게엠베하 | 하전 입자의 빔을 이용한 표면 조사/변경 장치 및 방법 |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7232997B2 (en) | 2004-04-15 | 2007-06-19 | Nawotec Gmbh | Apparatus and method for investigating or modifying a surface with a beam of charged particles |
| EP1774538A4 (de) * | 2004-07-29 | 2012-06-06 | Omniprobe Inc | Multiples gasinjektionssystem für strahlinstrumente geladener teilchen |
| US7312448B2 (en) | 2005-04-06 | 2007-12-25 | Carl Zeiss Nts Gmbh | Method and apparatus for quantitative three-dimensional reconstruction in scanning electron microscopy |
| DE102006043895B9 (de) * | 2006-09-19 | 2012-02-09 | Carl Zeiss Nts Gmbh | Elektronenmikroskop zum Inspizieren und Bearbeiten eines Objekts mit miniaturisierten Strukturen |
| DE102006054695B4 (de) * | 2006-11-17 | 2014-05-15 | Carl Von Ossietzky Universität Oldenburg | Verfahren zur Regelung nanoskaliger elektronenstrahlinduzierter Abscheidungen |
| DE102007054073A1 (de) | 2007-11-13 | 2009-05-14 | Carl Zeiss Nts Gmbh | System und Verfahren zum Bearbeiten eines Objekts |
| DE102007054074A1 (de) | 2007-11-13 | 2009-05-14 | Carl Zeiss Nts Gmbh | System zum Bearbeiten eines Objekts |
| TWI479570B (zh) | 2007-12-26 | 2015-04-01 | 奈華科技有限公司 | 從樣本移除材料之方法及系統 |
| DE102008009640A1 (de) | 2008-02-18 | 2009-08-27 | Carl Zeiss Nts Gmbh | Prozessierungssystem |
| JP5693241B2 (ja) * | 2008-02-28 | 2015-04-01 | カールツァイス エスエムエス ゲーエムベーハーCarl Zeiss SMS GmbH | 微細化構造を有する物体の加工方法 |
| DE102008011531B4 (de) * | 2008-02-28 | 2011-12-08 | Carl Zeiss Sms Gmbh | Verfahren zum Bearbeiten eines Objekts mit miniaturisierten Strukturen |
| DE102008011530B4 (de) * | 2008-02-28 | 2012-05-03 | Carl Zeiss Sms Gmbh | Verfahren zum Bearbeiten eines Objekts mit miniaturisierten Strukturen |
| DE102008040426B4 (de) | 2008-07-15 | 2015-12-24 | Carl Zeiss Microscopy Gmbh | Verfahren zur Untersuchung einer Oberfläche eines Objekts |
| DE102008049655A1 (de) | 2008-09-30 | 2010-04-08 | Carl Zeiss Nts Gmbh | Partikelstrahlsystem und Verfahren zum Betreiben desselben |
| DE102009045008A1 (de) | 2008-10-15 | 2010-04-29 | Carl Zeiss Smt Ag | EUV-Lithographievorrichtung und Verfahren zum Bearbeiten einer Maske |
| DE102009033319B4 (de) | 2009-07-15 | 2019-02-21 | Carl Zeiss Microscopy Gmbh | Partikelstrahl-Mikroskopiesystem und Verfahren zum Betreiben desselben |
| WO2011151116A1 (en) * | 2010-06-03 | 2011-12-08 | Carl Zeiss Sms Gmbh | A method for determining the performance of a photolithographic mask |
| JP5481401B2 (ja) * | 2011-01-14 | 2014-04-23 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
| DE102011018460A1 (de) | 2011-04-21 | 2012-10-25 | Carl Zeiss Nts Gmbh | Prozessierungssystem |
| DE102012001267A1 (de) | 2012-01-23 | 2013-07-25 | Carl Zeiss Microscopy Gmbh | Partikelstrahlsystem mit Zuführung von Prozessgas zu einem Bearbeitungsort |
| DE102018222522A1 (de) | 2018-12-20 | 2020-06-25 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betrieb einer Gaszuführungseinrichtung sowie Gaszuführungseinrichtung zur Durchführung des Verfahrens und Teilchenstrahlgerät mit einer Gaszuführungseinrichtung |
| DE102020120940B4 (de) | 2020-08-07 | 2023-12-28 | Carl Zeiss Smt Gmbh | Bearbeitungsanordnung, Vorrichtung, Verfahren, Spülplatte und Verwendung |
| DE102020124306B4 (de) | 2020-09-17 | 2022-08-11 | Carl Zeiss Smt Gmbh | Vorrichtung zum Analysieren und/oder Bearbeiten einer Probe mit einem Teilchenstrahl und Verfahren |
| DE102020124307B4 (de) | 2020-09-17 | 2026-01-29 | Carl Zeiss Smt Gmbh | Vorrichtung zum Analysieren und/oder Bearbeiten einer Probe mit einem Teilchenstrahl und Verfahren |
| DE102021120913B3 (de) | 2021-08-11 | 2023-02-09 | Carl Zeiss Smt Gmbh | Vorrichtung zum Analysieren und/oder Bearbeiten einer Probe mit einem Teilchenstrahl und Verfahren |
| DE102021132833A1 (de) | 2021-12-13 | 2023-06-15 | Carl Zeiss Microscopy Gmbh | Gaszuführungseinrichtung, System mit einer Gaszuführungseinrichtung sowie Teilchenstrahlgerät mit einer Gaszuführungseinrichtung oder dem System |
| DE102021132834B4 (de) | 2021-12-13 | 2024-08-08 | Carl Zeiss Microscopy Gmbh | Gasreservoir, Gaszuführungseinrichtung mit einem Gasreservoir und Teilchenstrahlgerät mit einer Gaszuführungseinrichtung |
| DE102021132832A1 (de) | 2021-12-13 | 2023-06-15 | Carl Zeiss Microscopy Gmbh | Gaszuführungseinrichtung, Teilchenstrahlgerät mit einer Gaszuführungseinrichtung sowie Verfahren zum Betrieb der Gaszuführungseinrichtung und des Teilchenstrahlgeräts |
| DE102021214447A1 (de) | 2021-12-15 | 2023-06-15 | Carl Zeiss Smt Gmbh | Elektronenmikroskop zum Untersuchen einer Probe |
| DE102022118006B3 (de) | 2022-07-19 | 2023-11-16 | Carl Zeiss Microscopy Gmbh | Verfahren zum Bearbeiten einer Probe, Teilchenstrahlsystem und Computerprogrammprodukt |
| DE102022208597B4 (de) * | 2022-08-18 | 2026-03-05 | Carl Zeiss Microscopy Gmbh | Vorrichtung zum Abbilden und Bearbeiten einer Probe mit einem fokussierten Teilchenstrahl |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5055696A (en) * | 1988-08-29 | 1991-10-08 | Hitachi, Ltd. | Multilayered device micro etching method and system |
| US5148024A (en) * | 1990-03-28 | 1992-09-15 | Seiko Instruments, Inc. | Ion beam processing apparatus and gas gun therefor |
| US5188705A (en) * | 1991-04-15 | 1993-02-23 | Fei Company | Method of semiconductor device manufacture |
| US5645897A (en) * | 1992-02-15 | 1997-07-08 | Andra; Jurgen | Process and device for surface-modification by physico-chemical reactions of gases or vapors on surfaces, using highly-charged ions |
| US5885354A (en) * | 1993-12-01 | 1999-03-23 | Act Advanced Circuit Testing Gesellschaft Fur Testsystement-Wicklung Mbh | Method and apparatus for processing a specimen |
| WO2002019375A1 (de) * | 2000-08-26 | 2002-03-07 | Deutsche Telekom Ag | Vorrichtung, set und verfahren zur zuführung eines gases oder einer flüssigkeit durch ein rohr an eine oberfläche |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3382460D1 (de) * | 1982-10-19 | 1991-12-19 | Varian Associates | Bearbeitungsgeraet mit einer vorrichtung zur erzeugung eines lokalisierten vakuums. |
| US4698236A (en) * | 1984-10-26 | 1987-10-06 | Ion Beam Systems, Inc. | Augmented carbonaceous substrate alteration |
| DE3890362T1 (de) * | 1987-05-11 | 1989-10-19 | Microbeam Inc | Maskenreparatur unter verwendung eines optimierten fokussierten ionenstrahlsystems |
| EP0361460A3 (de) * | 1988-09-29 | 1990-08-01 | Sony Corporation | Strukturherstellungsverfahren |
| US5683547A (en) * | 1990-11-21 | 1997-11-04 | Hitachi, Ltd. | Processing method and apparatus using focused energy beam |
| DE4421517A1 (de) * | 1993-06-28 | 1995-01-05 | Schlumberger Technologies Inc | Verfahren zum Abtrag oder Auftrag von Material mittels eines Partikelstrahls und Vorrichtung zu seiner Durchführung |
| US5435850A (en) | 1993-09-17 | 1995-07-25 | Fei Company | Gas injection system |
| JP3310136B2 (ja) * | 1994-09-17 | 2002-07-29 | 株式会社東芝 | 荷電ビーム装置 |
| US5747818A (en) * | 1996-10-21 | 1998-05-05 | Schlumberger Technologies Inc. | Thermoelectric cooling in gas-assisted FIB system |
| US6042738A (en) * | 1997-04-16 | 2000-03-28 | Micrion Corporation | Pattern film repair using a focused particle beam system |
| WO1999040234A1 (en) * | 1998-02-06 | 1999-08-12 | Northern Edge Associates Inc. | Method and apparatus for deposition of three dimensional object |
| US5911711A (en) * | 1998-06-29 | 1999-06-15 | Becton, Dickinson And Company | Lubricant system for hypodermic needles and method for its application |
| DE19851622A1 (de) * | 1998-11-09 | 2000-05-18 | Fraunhofer Ges Forschung | Verfahren zum Untersuchen und/oder zum Modifizieren von Oberflächenstrukturen einer Probe |
| US6268608B1 (en) * | 1998-10-09 | 2001-07-31 | Fei Company | Method and apparatus for selective in-situ etching of inter dielectric layers |
| WO2001003145A1 (en) * | 1999-07-02 | 2001-01-11 | Applied Materials, Inc. | Apparatus and method for examining specimen with a charged particle beam |
-
2002
- 2002-02-25 DE DE2002108043 patent/DE10208043B4/de not_active Expired - Lifetime
-
2003
- 2003-02-25 EP EP07022228A patent/EP1892748B1/de not_active Expired - Lifetime
- 2003-02-25 JP JP2003570383A patent/JP4058002B2/ja not_active Expired - Lifetime
- 2003-02-25 WO PCT/EP2003/001923 patent/WO2003071578A2/de not_active Ceased
- 2003-02-25 EP EP03742580A patent/EP1479091A2/de not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5055696A (en) * | 1988-08-29 | 1991-10-08 | Hitachi, Ltd. | Multilayered device micro etching method and system |
| US5148024A (en) * | 1990-03-28 | 1992-09-15 | Seiko Instruments, Inc. | Ion beam processing apparatus and gas gun therefor |
| US5188705A (en) * | 1991-04-15 | 1993-02-23 | Fei Company | Method of semiconductor device manufacture |
| US5645897A (en) * | 1992-02-15 | 1997-07-08 | Andra; Jurgen | Process and device for surface-modification by physico-chemical reactions of gases or vapors on surfaces, using highly-charged ions |
| US5885354A (en) * | 1993-12-01 | 1999-03-23 | Act Advanced Circuit Testing Gesellschaft Fur Testsystement-Wicklung Mbh | Method and apparatus for processing a specimen |
| WO2002019375A1 (de) * | 2000-08-26 | 2002-03-07 | Deutsche Telekom Ag | Vorrichtung, set und verfahren zur zuführung eines gases oder einer flüssigkeit durch ein rohr an eine oberfläche |
Non-Patent Citations (1)
| Title |
|---|
| See also references of EP1479091A2 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101101558B1 (ko) | 2004-04-15 | 2012-01-02 | 나우테크 게엠베하 | 하전 입자의 빔을 이용한 표면 조사/변경 장치 및 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003071578A2 (de) | 2003-08-28 |
| EP1892748A3 (de) | 2010-03-17 |
| EP1892748A2 (de) | 2008-02-27 |
| JP4058002B2 (ja) | 2008-03-05 |
| JP2005518638A (ja) | 2005-06-23 |
| EP1892748B1 (de) | 2011-10-19 |
| EP1479091A2 (de) | 2004-11-24 |
| DE10208043B4 (de) | 2011-01-13 |
| DE10208043A1 (de) | 2003-09-11 |
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