WO2003085152A2 - Corps revetu et procede de revetement d'un corps - Google Patents
Corps revetu et procede de revetement d'un corps Download PDFInfo
- Publication number
- WO2003085152A2 WO2003085152A2 PCT/EP2003/003737 EP0303737W WO03085152A2 WO 2003085152 A2 WO2003085152 A2 WO 2003085152A2 EP 0303737 W EP0303737 W EP 0303737W WO 03085152 A2 WO03085152 A2 WO 03085152A2
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- WO
- WIPO (PCT)
- Prior art keywords
- layer
- elements
- coating
- substrate
- body according
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
- C23C28/044—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material coatings specially adapted for cutting tools or wear applications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
- C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
Definitions
- the invention relates to a coated body and a method for coating a body.
- PVD Physical Vapor Deposition
- a PVD method is described, for example, in DE-A-3825399.
- One of the PVD processes is magnetron sputtering. Targets are atomized and a coating atmosphere is created as plasma, the components of which are deposited on the surface of the body.
- Other PVD processes such as electron beam evaporation or arc evaporation are also known.
- the elements that make up a deposited layer are largely determined by the underlying material system.
- the "material system” here refers to the combination of the elements relevant to the layer material.
- the layer actually deposited can also contain other constituents, for example portions of a process gas, impurities or other admixtures.
- a material system that is known for the formation of wear protection layers is Ti-Al-N. It is known to use PVD devices to deposit layers which consist entirely or predominantly of Ti-Al-N. PVD systems with DC plasmas are used for this. In contrast to CVD processes, however, it has so far not been possible to economically deposit insulating layers by means of conventional PVD processes using direct current plasmas. This is due to the formation of insulating layers both on the targets and on the chamber and substrates during the coating.
- the body according to the invention has a substrate and one or more layers thereon.
- the body can, for example, be a tool or part of a tool.
- a coating for a cutting tool for example a drill, a milling cutter or an indexable insert, offers particular advantages.
- the substrate is preferably metallic (eg HSS steel, hard metal) and can have several layers. However, only one layer is considered here, which is predominantly formed from a certain material system. This is understood to mean that the layer consists of at least 60% by weight, preferably more than 80% by weight or even completely, of the elements of the material system. stands. Overall, the layer can have a thickness of 1-20 ⁇ m, for example, a range of 2-6 ⁇ m is preferred. A particularly preferred layer thickness is approximately 3 ⁇ m.
- a material system which comprises aluminum, nitrogen and one or more further elements.
- This material system is deposited in such a form that the layer has a low electrical conductivity.
- Such hexagonal components correspond to the root structure of Al-N, which is part of the material system Al-X-N, where X stands for the "further element” or elements, which are discussed in more detail below.
- the hexagonal proportions occur more when a composition is selected that has an increased Al-Antcil.
- the parameter range or operating point of the coating system in which a layer with a partially or completely hexagonal crystal structure is deposited is to be determined by the person skilled in the art for the material system used in each case on the basis of the phase diagram.
- the Al-N content in the layer is preferably more than 65 mol%.
- the Al-N content can be more than 80 mol% without a decrease in the mechanical properties.
- an Al-N content of 65 to 80 mol% is preferred for Ti-Al-N.
- the deposition of conductive Ti-Al-N layers has been known for a long time, layers of this type have not previously been used with a hexagonal content, i.e. deposited with low conductivity.
- the layer according to the invention is of high hardness due to its crystal structure and is therefore extremely suitable as a wear protection layer.
- the deposition of such layers can also be carried out technically well on an industrial scale using the proposed PVD method.
- a particular advantage of these layers is their low susceptibility to oxidation.
- the low conductivity can be an advantage for some applications. Since conventional, in particular metallic substrates have good electrical conductivity, the current conduction takes place essentially transversely to the layer when measuring resistance between two points on the surface of the layer. The measured resistance level is therefore largely dependent on the layer thickness. In this way, the layer thickness can be inferred from the measurement to be carried out with very simple means, and a statement can be made, for example, of how far a wear protection layer has already been removed. Therefore, according to a development of the invention, it is preferred that the conductivity of the substrate is considerably higher than the conductivity of the layer.
- the layer according to the invention is electrically poor or even not conductive. Poor conductivity here already means a specific electrical resistance of at least 1 ⁇ m.
- the specific electrical resistance is particularly preferably significantly higher, i.e. at more than 1E3 ⁇ m or even more than 1E5 ⁇ m.
- An electrically non-conductive or poorly conductive layer aimed at according to the invention which is applied to a highly conductive, e.g. metallic substrate material (e.g. steel, hard metal) can be obtained from conventional, highly conductive layers, for example by measuring the electrical resistance between two points on the surface (with an ohm meter by pressing on the test probes). As already explained above, for example at a distance of 1 cm from the measuring points, the current conduction path essentially runs over the (highly conductive) substrate, so that the measured resistance mainly depends on the layer thickness and the electrical conductivity of the layer. It is preferred here that the measured resistance value is higher than 3 ⁇ per ⁇ m layer thickness, particularly preferably higher than 50 ⁇ per ⁇ m layer thickness.
- the low or non-conductive layers sought according to the invention can be easily distinguished from the conventional layers by means of the resistance measurement.
- the preferred crystal structure of the layer can be seen particularly well when looking at the X-ray diffractogram.
- those of the non-conductive structure also appear here.
- These diffraction reflections correspond to the peaks at the positions according to the corresponding ICDD powder diffractogram No. 25-1133.
- the corresponding ICDD-tabulated powder diffractogram is known to the person skilled in the art and is expressly included in the disclosure here.
- the preferred diffraction reflections here are AlN (002), AlN (102) and A1N (103).
- the layer according to the invention can consist (entirely or predominantly) of different materials which belong to a certain class of systems.
- the class of systems under consideration comprises those systems which are formed from the elements N, AI and at least one further element.
- the further element such metals come into question which have the property that they form cubic nitrides in Na-Cl structure.
- this includes the following group of elements: Am, Ce, Cr, Cm, Er, Eu, Gd, Hf, La, Lu, Mo, Mn, Nb, Nd, Np, Pa, Pr, Pu, Re, Sc, Sm , Sr, Ta, Tb, Tc, Th, Ti, U, V, W, Y, Yb, Zr.
- the following are preferably used: Zr, Hf, Ti, Ta, Nb, V, W, Mo, Cr, Re, Mn.
- Systems in which the further element is Ti (Ti-Al-N) or Ti is one of the further elements are particularly preferred.
- the system can consist of three elements. Preferred examples are Cr-Al-N, Hf-Al-N, Zr-Al-N, V-Al-N. A particularly preferred embodiment is Ti-Al-N.
- the system can also contain other elements, for example Ti-Hf-Al-N, Ti-Zr-Al-N, Ti-Ta-Al-N, Ti-Nb -Al-N, Ti V-Al-N, Ti-W-Al-N, Ti-Mo-Al-N, Ti-Cr-Al-N, Ti-Re-Al-N and Ti-Mn-Al-N. It is therefore possible, for example, to use material systems with four, five or more elements.
- the layer preferably has a fine-grained or nanocrystalline structure in which individual crystallites are arranged without or with only a slight orientation. This is in contrast to the stem-shaped growth of crystallites, as is known from conventional PVD coating processes.
- a layer with a nanocrystalline structure there are preferably crystallites with a size of less than 500 nm, preferably arranged less than 100 nm without orientation.
- the object is achieved by a PVD process in which the electrodes are operated with AC voltage.
- the electrodes are electrically controlled so that they are mutually anode and cathode.
- a layer is deposited on a substrate, the process parameters (in particular substrate temperature and composition of the coating atmosphere, which can be influenced via electrical power, composition of the targets and the amount of nitrogen supplied) are set such that the layer has a low electrical conductivity as described above ,
- sinusoidal AC voltage can be used as well as pulsed voltages.
- the frequency of the AC voltage is preferably in the range of more than 10 kHz, particularly preferably approximately 50 kHz.
- One or more pairs of electrodes of the same type or of different designs can be provided, to which the AC voltage is applied. Arrangements can also be used in which several, for example three electrodes, are alternately supplied with voltage pulses all around.
- FIG. 1 The necessary considerations for the setting of the process parameters for a material system can be explained using the example of FIG. 1.
- the figure shows the experimentally determined non-equilibrium phase diagram of the TiN-AlN system. Although TiN and AlN have no solubility under equilibrium conditions, a wide solubility of the two phases can be achieved under the non-equilibrium conditions of the PVD. This effect is based on the process distant from equilibrium, which leads to the formation of a metastable phase in a local, kinetically caused energy minimum.
- the phase diagram of Fig.i shows an area I of NaCl structure (working points with filled squares), an area II of Wurzit structure (crossed squares) and a mixing area III (circles).
- Fig. 1 shows the experimentally determined phase diagram of the material system
- Coating system shows a diagram showing the ionization on the substrate
- Fig. 5 shows a transverse break through a coated substrate.
- Electrically insulating wear protection layers are produced using the proposed method or the proposed device by generating a plasma between electrodes in a PVD coating system.
- the electrodes which are operated with AC voltage (for example bipolar pulsed) are equipped with targets which contain the elements to be deposited. These are aluminum and one or more other metals from the aforementioned group. Nitrogen is also added to the plasma in the coating atmosphere.
- the process parameters are set so that layers of low conductivity are deposited on the substrate. This is preferably done by setting the parameters in such a way that a proportion of Al-N in the Wurzit structure is deposited.
- the person skilled in the art is able to set the corresponding parameters in such a way that a layer with the desired properties is will be divorced.
- he will look at the phase diagram of the selected system for the material system selected in each case and adjust the composition of the coating atmosphere and the substrate temperature in such a way that a desired working point is reached in this diagram, at which the structure of the deposited layer is as desired such that the layer has low electrical conductivity.
- the phase diagram is shown in FIG.
- the possible working points for the deposition of layers of low conductivity would be in areas II or III (circles or crossed squares).
- the person skilled in the art knows or can find out by means of a few targeted experiments how the composition of the coating atmosphere can be influenced in the desired manner in each case, for example by the composition of the targets and the amount of the gaseous constituents supplied.
- the substrate temperature can be influenced, for example, by the electrical power supplied to the electrodes and / or by external additional heating.
- FIG. 2 shows a symbolic representation of an example of elements of a PVD coating system.
- An anode 12 and four cathodes 14 and a substrate holder 16 are arranged in a coating chamber 10 under low pressure.
- a working gas preferably argon
- the cathodes 14 are designed as magnetron cathodes. Alternatively, some of the electrodes can also be designed as diode cathodes.
- the electrodes 14 each have targets 20 which are designed as plates made of material to be atomized.
- the material of the plates consists of Ti, with AI being used in the form of plugs in bores in the titanium plate.
- the targets can also be designed, for example, as an aluminum plate with bores, plugs made of the further material or the further materials being inserted into the bores.
- composite targets made of the two materials can be used, or sintered materials.
- several targets can also be used, of which, for example in the case of (Ti-Al) -N, at least one consists of Ti and at least one further of AI.
- a bipolar pulsed voltage of, for example, approximately 500 volts lies between two cathodes 14 in each case.
- Ions of the working gas, for example Ar are alternately accelerated between two targets and atomize them.
- gaseous nitrogen is supplied through the gas inlet 18. Under the influence of the electrical and magnetic fields in the area in front of the cathodes 14, a coating atmosphere is formed in the form of a plasma.
- Fig. 3 shows the energy distribution of Ti + ions in the plasma, once in a conventional DC process (lower curve) and in the proposed process with pulsed AC voltage on the electrodes. The example shown is measured on a system of type CC800 from the applicant with four Ti-Al targets in an Ar / N atmosphere, operated with an electrical power of 16 kW.
- the coating atmosphere contains the gaseous constituents supplied, including nitrogen, and the atomized constituents of the target 20.
- the respective composition of the coating atmosphere depends on the atomization rates of the target materials and on the gas flow set. It can be influenced by a suitable choice of the material of the target 20 (i.e. by the free surface of the parts made of the respective materials, taking into account the dusting rate), but also by different additions of gaseous components. For example, it is known that at high Al contents in the target 20 there is a so-called "poisoning" (ie formation of an electrically non-conductive nitride already on the solid target material) of a target 20. Since the degree of poisoning the dusting rate on the poisoned If the target is significantly influenced, the dusting rate for the elements and thus the composition of the coating atmosphere can be changed through targeted use of the poisoning.
- the elements of the coating atmosphere are deposited on the substrates, ie on workpieces such as drills, indexable inserts etc. attached to the substrate holder.
- a potential difference is generated between the substrates and the plasma, for example by a voltage source between the substrate holder and the wall of the vacuum chamber 10. Because of the bias voltage, bombardment with ions of the ion also occurs on the substrate Working gas, which leads to the partial removal of the layer and, as a result, an improvement in the deposited layer.
- a layer is formed on the surface of a substrate, which layer mainly consists of the elements of the material system used.
- the examples relate to a CC8oo PVD coating system from the applicant.
- Argon is used as the process gas and nitrogen as the reactive gas.
- Four magnetron cathodes made of the selected target material are used.
- the potential of the substrate is set so that a bias voltage is applied to the chamber wall.
- the coating device consumes electrical power, hereinafter referred to as "cathode power" (resulting from the respective voltage between the anodes and cathodes and the ion current), a power control regulating the respective power to a desired value.
- cathode power resulting from the respective voltage between the anodes and cathodes and the ion current
- a substrate temperature is established, which is measured by the system.
- the substrate temperature can be increased by an additional electrical heater.
- WO 98/46807 describes a device for PVD coating with regard to the voltages or potentials to be set, which is expressly included here.
- a high Al content, ie non-conductive (Ti, Al, Cr) N layer is to be deposited on hard metal indexable inserts in the PVD process.
- an argon flow of 250 ml per minute and a nitrogen flow of 90 ml per minute are set.
- the cathodes are equipped with targets in the form of a Ti plate, 50 Al inserts and 12 Cr inserts being introduced into round holes in the plate.
- the total area of the plate is 500 x 88 mm, the diameter of the inserts each 12 mm.
- the cathodes are operated with a bipolar voltage pulsed at a frequency of 30 kHz.
- a power of 8 kW is set for each of the four magnetron cathodes, ie a total of 32 kW.
- the voltage of the magnetron is in this case Sputterzyklus about 500 V. It follows with the used system, a substrate temperature of 470 0 C, is deposited in a mixture of cubic and hexagonal (Ti, Cr, Al) N. A layer rate of around 1.5 ⁇ m / h results from the set parameters.
- the Al content of the layer is about 70 mol% AlN, the Cr content about 5 at%.
- a two-phase layer consisting of a hexagonal and a cubic phase is formed.
- the conductivity of a 3 ⁇ m thick layer on a well electrically conductive hard metal substrate is more than 500 ohms when measured with an ohm meter at a test tip distance of approx.
- the hardness of the layer produced is approximately 2800 HV.
- a high Al content, i.e. non-conductive (Ti, Al) N layer can be deposited using the PVD process.
- Ti, Al non-conductive
- an argon flow of 250 ml per minute and a nitrogen flow of 90 ml per minute are set.
- Two of the cathodes are equipped with targets in the form of an aluminum plate, the other two cathodes with targets in the form of a Ti plate with 48 AI inserts. The dimensions of the plate and the inserts are analogous to the first example.
- the cathodes are operated bipolar in pulse mode at a frequency of 50 kHz.
- a power of 8 kW is set for each of the four magnetron cathodes, ie a total of 32 kW. This results in a substrate temperature of 480 0 C, at which a mixture of cubic and hexagonal (Ti, Al) N is deposited.
- a layer rate of about 1.5 ⁇ m / h results from the set parameters.
- the Al content of the layer is approximately 80 mol% AlN.
- a two-phase layer consisting of a hexagonal and a cubic phase is formed.
- the conductivity of a 3 ⁇ m thick layer on an electrically conductive hard metal substrate is measured with an ohm meter with a probe tip distance of approx. learning more than 1000 ohms.
- the hardness of the layer produced is approximately 3000 HV.
- Fig. 5 shows a transverse break through the coated body.
- the surface of a substrate 22 is visible.
- a Ti-Al-N layer 24 is applied thereon.
- the layer 24 does not have a texture made up of crystallites growing upwards from the substrate surface. The crystallites are very leinein and show no recognizable structure.
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- Engineering & Computer Science (AREA)
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- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2003227598A AU2003227598A1 (en) | 2002-04-11 | 2003-04-10 | Coated bodies and a method for coating a body |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10216048 | 2002-04-11 | ||
| DE10216048.1 | 2002-04-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2003085152A2 true WO2003085152A2 (fr) | 2003-10-16 |
| WO2003085152A3 WO2003085152A3 (fr) | 2004-03-25 |
Family
ID=28684957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2003/003737 Ceased WO2003085152A2 (fr) | 2002-04-11 | 2003-04-10 | Corps revetu et procede de revetement d'un corps |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU2003227598A1 (fr) |
| WO (1) | WO2003085152A2 (fr) |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007003648A1 (fr) * | 2005-07-04 | 2007-01-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Corps recouverts d'une substance dure, et leur procede de production |
| WO2007121954A1 (fr) * | 2006-04-21 | 2007-11-01 | Cemecon Ag | Corps à revêtement |
| DE102007000512B3 (de) * | 2007-10-16 | 2009-01-29 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Hartstoffbeschichtete Körper und Verfahren zu deren Herstellung |
| DE102008013964A1 (de) | 2008-03-12 | 2009-09-17 | Kennametal Inc. | Hartstoffbeschichteter Körper |
| DE102008013966A1 (de) | 2008-03-12 | 2009-09-17 | Kennametal Inc. | Hartstoffbeschichteter Körper |
| DE102008013965A1 (de) | 2008-03-12 | 2009-09-17 | Kennametal Inc. | Hartstoffbeschichteter Körper |
| DE102008062060A1 (de) * | 2008-12-12 | 2010-06-17 | Mahle International Gmbh | Gleitschicht und Gleitelement |
| WO2011058132A1 (fr) | 2009-11-12 | 2011-05-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Corps revêtus en métal, métal dur, cermet ou céramique ainsi que procédé de revêtement de tels corps |
| AT510713B1 (de) * | 2011-03-18 | 2012-06-15 | Boehlerit Gmbh & Co Kg | Schneidwerkzeug oder schneideinsatz hierfür sowie verwendung dieser |
| AT510981B1 (de) * | 2011-03-18 | 2012-08-15 | Boehlerit Gmbh & Co Kg | Beschichteter körper, verwendung desselben und verfahren zu dessen herstellung |
| WO2012126030A1 (fr) | 2011-03-18 | 2012-09-27 | Boehlerit Gmbh & Co. Kg. | Corps pourvu d'un revêtement et son procédé de production |
| EP2517809A4 (fr) * | 2009-12-21 | 2012-10-31 | Sumitomo Elec Hardmetal Corp | Outil de découpe avec revêtement de surface |
| EP2517810A4 (fr) * | 2009-12-21 | 2012-10-31 | Sumitomo Elec Hardmetal Corp | Outil de découpe avec revêtement de surface |
| WO2013134796A1 (fr) | 2012-03-14 | 2013-09-19 | Boehlerit Gmbh & Co.Kg. | Corps revêtu et procédé pour revêtir un corps |
| JP2014004665A (ja) * | 2012-06-26 | 2014-01-16 | Mitsubishi Materials Corp | 耐摩耗性と耐欠損性にすぐれた表面被覆切削工具 |
| US20150036723A1 (en) * | 2012-02-28 | 2015-02-05 | Mitsubishi Materials Corporation | Metal nitride material for thermistor, method for producing same, and film type thermistor sensor |
| US9103036B2 (en) | 2013-03-15 | 2015-08-11 | Kennametal Inc. | Hard coatings comprising cubic phase forming compositions |
| US9168664B2 (en) | 2013-08-16 | 2015-10-27 | Kennametal Inc. | Low stress hard coatings and applications thereof |
| AT516062A4 (de) * | 2015-01-15 | 2016-02-15 | Boehlerit Gmbh & Co Kg | Verfahren zum Beschichten eines Gegenstandes und damit hergestellte Beschichtung |
| US9852829B2 (en) * | 2012-02-28 | 2017-12-26 | Mitsubishi Materials Corporation | Metal nitride material for thermistor, method for producing same, and film thermistor sensor |
| US9896767B2 (en) | 2013-08-16 | 2018-02-20 | Kennametal Inc | Low stress hard coatings and applications thereof |
| US20220098721A1 (en) * | 2019-02-11 | 2022-03-31 | Oerlikon Surface Solutions Ag, Pfäffikon | Coated Tool for Machining of Difficult to Process Materials |
| WO2023164731A1 (fr) | 2022-03-03 | 2023-09-07 | Boehlerit Gmbh & Co.Kg. | Procédé de fabrication d'un revêtement sur un objet et corps revêtu fabriqué de manière correspondante |
| EP4610395A2 (fr) | 2024-02-28 | 2025-09-03 | Boehlerit GmbH | Objet revêtu et son procédé de fabrication |
| EP4610394A1 (fr) | 2024-02-28 | 2025-09-03 | Boehlerit GmbH & Co. KG. | Procédé de revêtement d'un objet et objet ainsi obtenu |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100305885B1 (ko) * | 1999-10-20 | 2001-11-14 | 유창종 | 절삭공구/내마모성 공구용 표면 피복 경질합금 |
-
2003
- 2003-04-10 AU AU2003227598A patent/AU2003227598A1/en not_active Abandoned
- 2003-04-10 WO PCT/EP2003/003737 patent/WO2003085152A2/fr not_active Ceased
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| DATABASE WPI Section Ch, Week 200171 Derwent Publications Ltd., London, GB; Class L02, AN 2001-614637 XP002257717 & KR 2001 037 811 A (KORLOY INC), 15. Mai 2001 (2001-05-15) * |
| DONOHUE L A ET AL: "Microstructure and oxidation resistance of Ti1-x-y-zAlxCryYzN layers grown by combined steered-arc/unbalanced-magnetron-sputter deposition" SURFACE AND COATINGS TECHNOLOGY, ELSEVIER, AMSTERDAM, NL, Bd. 94/95, 21. April 1997 (1997-04-21), Seiten 226-231, XP000826655 ISSN: 0257-8972 * |
| INOUE S ET AL: "Oxidation behavior of (Ti1-xAlx)N films prepared by r.f. reactive sputtering" THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, Bd. 300, Nr. 1-2, 28. Mai 1997 (1997-05-28), Seiten 171-176, XP004085171 ISSN: 0040-6090 * |
| MUSIL J ET AL: "Superhard nanocomposite Ti1-xAlxN films prepared by magnetron sputtering" THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, Bd. 365, Nr. 1, April 2000 (2000-04), Seiten 104-109, XP004195137 ISSN: 0040-6090 * |
| WAHLSTR\M U ET AL: "Crystal growth and microstructure of polycrystalline Ti1-xAlxN alloy films deposited by ultra-high-vacuum dual-target magnetron sputtering" THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, Bd. 235, Nr. 1/2, 25. November 1993 (1993-11-25), Seiten 62-70, XP000408749 ISSN: 0040-6090 * |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2003085152A3 (fr) | 2004-03-25 |
| AU2003227598A1 (en) | 2003-10-20 |
| AU2003227598A8 (en) | 2003-10-20 |
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