WO2003090283A3 - Halbleiterbauelement mit integrierter, eine mehrzahl an metallisierungsebenen aufweisende kapazitätsstruktur - Google Patents

Halbleiterbauelement mit integrierter, eine mehrzahl an metallisierungsebenen aufweisende kapazitätsstruktur Download PDF

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Publication number
WO2003090283A3
WO2003090283A3 PCT/DE2003/001304 DE0301304W WO03090283A3 WO 2003090283 A3 WO2003090283 A3 WO 2003090283A3 DE 0301304 W DE0301304 W DE 0301304W WO 03090283 A3 WO03090283 A3 WO 03090283A3
Authority
WO
WIPO (PCT)
Prior art keywords
capacitor structure
semiconductor component
integrated capacitor
metallization planes
planes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2003/001304
Other languages
English (en)
French (fr)
Other versions
WO2003090283A2 (de
Inventor
Hichem Abdallah
Juergen Oehm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to JP2003586939A priority Critical patent/JP4225921B2/ja
Priority to EP03724870A priority patent/EP1497869B1/de
Priority to US10/511,189 priority patent/US7061746B2/en
Publication of WO2003090283A2 publication Critical patent/WO2003090283A2/de
Publication of WO2003090283A3 publication Critical patent/WO2003090283A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Ein Halbleiterbauelement weist eine auf einem Halbleitersubstrat ausgebildete Isolationsschicht auf, in der eine Kapazitätsstruktur (K) ausgebildet ist. Die Kapazitätsstruktur (K) weist zumindest zwei parallel zueinander angeordnete Metallisierungsebenen (1, 2, 3, 6, 8) auf, wobei zumindest eine der Metallisierungsebenen (1, 2, 3, 6, 8) gitterförmig ausgebildet ist und sich elektrisch leitende, inhomogene Strukturen (1a bis 1l; 10a, 10b), die mit der ersten Metallisierungsebene (1, 2, 3, 6, 8) elektrisch verbunden sind, zumindest teilweise in die Aussparungen der gitterförmigen Metallisierungsebene (1, 2, 3, 6, 8) erstrecken.
PCT/DE2003/001304 2002-04-19 2003-04-17 Halbleiterbauelement mit integrierter, eine mehrzahl an metallisierungsebenen aufweisende kapazitätsstruktur Ceased WO2003090283A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003586939A JP4225921B2 (ja) 2002-04-19 2003-04-17 複数の金属化平面を持つ集積キャパシタンス構造を有する半導体構成要素
EP03724870A EP1497869B1 (de) 2002-04-19 2003-04-17 Halbleiterbauelement mit integrierter, eine mehrzahl an metallisierungsebenen aufweisender kapazitätsstruktur
US10/511,189 US7061746B2 (en) 2002-04-19 2003-04-17 Semiconductor component with integrated capacitance structure having a plurality of metallization planes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10217566A DE10217566A1 (de) 2002-04-19 2002-04-19 Halbleiterbauelement mit integrierter, eine Mehrzahl an Metallisierungsebenen aufweisende Kapazitätsstruktur
DE10217566.7 2002-04-19

Publications (2)

Publication Number Publication Date
WO2003090283A2 WO2003090283A2 (de) 2003-10-30
WO2003090283A3 true WO2003090283A3 (de) 2004-01-15

Family

ID=29224605

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/001304 Ceased WO2003090283A2 (de) 2002-04-19 2003-04-17 Halbleiterbauelement mit integrierter, eine mehrzahl an metallisierungsebenen aufweisende kapazitätsstruktur

Country Status (5)

Country Link
US (1) US7061746B2 (de)
EP (1) EP1497869B1 (de)
JP (1) JP4225921B2 (de)
DE (1) DE10217566A1 (de)
WO (1) WO2003090283A2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340518A (ja) * 2004-05-27 2005-12-08 Sanyo Electric Co Ltd 容量素子
JP2006179620A (ja) * 2004-12-21 2006-07-06 Sharp Corp 半導体集積回路
DE102005045060B4 (de) 2005-09-21 2007-07-05 Infineon Technologies Ag Integrierte Schaltungsanordnung mit mehreren Leitstrukturlagen und Verfahren zu ihrer Herstellung
DE102005046734B4 (de) * 2005-09-29 2011-06-16 Infineon Technologies Ag Halbleiterbauelement mit integrierter Kapazitätsstruktur
TWI271754B (en) * 2006-02-16 2007-01-21 Jmicron Technology Corp Three-dimensional capacitor structure
JP2007273689A (ja) * 2006-03-31 2007-10-18 Denso Corp 半導体装置
US7990676B2 (en) * 2007-10-10 2011-08-02 Advanced Micro Devices, Inc. Density-conforming vertical plate capacitors exhibiting enhanced capacitance and methods of fabricating the same
JP5104403B2 (ja) * 2008-02-29 2012-12-19 富士通株式会社 キャパシタ
KR101024652B1 (ko) * 2008-12-09 2011-03-25 매그나칩 반도체 유한회사 캐패시터 구조체
US8378450B2 (en) 2009-08-27 2013-02-19 International Business Machines Corporation Interdigitated vertical parallel capacitor
US20110261500A1 (en) * 2010-04-22 2011-10-27 Freescale Semiconductor, Inc. Back end of line metal-to-metal capacitor structures and related fabrication methods
WO2015191641A1 (en) * 2014-06-10 2015-12-17 Smart Hybrid Systems Incorporated High energy density capacitor with micrometer structures and nanometer components
CA3156566C (en) * 2019-10-11 2025-05-06 10644137 Canada Inc. ELECTRONIC POWER METACONDENSER AND CONVERTERS FOR POWER ELECTRONIC SYSTEMS

Citations (3)

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Publication number Priority date Publication date Assignee Title
US5583359A (en) * 1995-03-03 1996-12-10 Northern Telecom Limited Capacitor structure for an integrated circuit
US6100591A (en) * 1998-05-25 2000-08-08 Nec Corporation Semiconductor device and method of fabricating the same
WO2001099163A2 (en) * 2000-06-19 2001-12-27 Koninklijke Philips Electronics N.V. Multiplayer pillar arry capacitor structure for deep -sub-micron cmos

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US4802951A (en) * 1986-03-07 1989-02-07 Trustees Of Boston University Method for parallel fabrication of nanometer scale multi-device structures
US5208725A (en) * 1992-08-19 1993-05-04 Akcasu Osman E High capacitance structure in a semiconductor device
DE19623517C1 (de) * 1996-06-12 1997-08-21 Siemens Ag MOS-Transistor für biotechnische Anwendungen
US6298500B1 (en) * 1996-12-19 2001-10-09 Jimmie L. Sollami Ventilated toilet seat
US6542352B1 (en) * 1997-12-09 2003-04-01 Daniel Devoe Ceramic chip capacitor of conventional volume and external form having increased capacitance from use of closely spaced interior conductive planes reliably connecting to positionally tolerant exterior pads through multiple redundant vias
US6972436B2 (en) * 1998-08-28 2005-12-06 Cree, Inc. High voltage, high temperature capacitor and interconnection structures
DE19840032C1 (de) * 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
US6208500B1 (en) * 1998-11-25 2001-03-27 Microchip Technology Incorporated High quality factor capacitor
JP3489729B2 (ja) * 1999-11-19 2004-01-26 株式会社村田製作所 積層コンデンサ、配線基板、デカップリング回路および高周波回路
US20020072189A1 (en) * 1999-12-17 2002-06-13 Haroun Baher S. Via capacitor
US6297524B1 (en) * 2000-04-04 2001-10-02 Philips Electronics North America Corporation Multilayer capacitor structure having an array of concentric ring-shaped plates for deep sub-micron CMOS
US6411492B1 (en) * 2000-05-24 2002-06-25 Conexant Systems, Inc. Structure and method for fabrication of an improved capacitor
DE10217565A1 (de) * 2002-04-19 2003-11-13 Infineon Technologies Ag Halbleiterbauelement mit integrierter gitterförmiger Kapazitätsstruktur
US6885539B1 (en) * 2003-12-02 2005-04-26 Presidio Components, Inc. Single layer capacitor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583359A (en) * 1995-03-03 1996-12-10 Northern Telecom Limited Capacitor structure for an integrated circuit
US6100591A (en) * 1998-05-25 2000-08-08 Nec Corporation Semiconductor device and method of fabricating the same
WO2001099163A2 (en) * 2000-06-19 2001-12-27 Koninklijke Philips Electronics N.V. Multiplayer pillar arry capacitor structure for deep -sub-micron cmos

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APARICIO R ET AL: "Capacity limits and matching properties of integrated capacitors", IEEE JOURNAL OF SOLID-STATE CIRCUITS, IEEE INC. NEW YORK, US, vol. 37, no. 3, March 2002 (2002-03-01), pages 384 - 393, XP002252607, ISSN: 0018-9200 *

Also Published As

Publication number Publication date
US20050219790A1 (en) 2005-10-06
WO2003090283A2 (de) 2003-10-30
DE10217566A1 (de) 2003-11-13
US7061746B2 (en) 2006-06-13
EP1497869B1 (de) 2012-03-14
JP2006511929A (ja) 2006-04-06
JP4225921B2 (ja) 2009-02-18
EP1497869A2 (de) 2005-01-19

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