WO2003103042A3 - Elektronisches bauteil mit äusseren flächenkontakten und verfahren zu seiner herstellung - Google Patents

Elektronisches bauteil mit äusseren flächenkontakten und verfahren zu seiner herstellung Download PDF

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Publication number
WO2003103042A3
WO2003103042A3 PCT/DE2003/001663 DE0301663W WO03103042A3 WO 2003103042 A3 WO2003103042 A3 WO 2003103042A3 DE 0301663 W DE0301663 W DE 0301663W WO 03103042 A3 WO03103042 A3 WO 03103042A3
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WO
WIPO (PCT)
Prior art keywords
external surface
surface contacts
producing
electronic component
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2003/001663
Other languages
English (en)
French (fr)
Other versions
WO2003103042A2 (de
Inventor
Jochen Dangelmaier
Harry Hedler
Roland Irsigler
Stefan Paulus
Jens Pohl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to EP03755901A priority Critical patent/EP1508166A2/de
Priority to US10/515,613 priority patent/US20060091561A1/en
Publication of WO2003103042A2 publication Critical patent/WO2003103042A2/de
Publication of WO2003103042A3 publication Critical patent/WO2003103042A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/019Manufacture or treatment using temporary auxiliary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32Component parts, details or accessories; Auxiliary operations
    • B29C43/58Measuring, controlling or regulating
    • B29C2043/5825Measuring, controlling or regulating dimensions or shape, e.g. size, thickness
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07202Connecting or disconnecting of bump connectors using auxiliary members
    • H10W72/07204Connecting or disconnecting of bump connectors using auxiliary members using temporary auxiliary members, e.g. sacrificial coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07231Techniques
    • H10W72/07236Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07251Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07255Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H10W72/2528Intermetallic compounds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/944Dispositions of multiple bond pads
    • H10W72/9445Top-view layouts, e.g. mirror arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Die Erfindung betrifft ein elektronisches Bauteil (1) und ein Verfahren zu seiner Herstellung mit äußeren Flächenkontakten (2) und mit einer Umverdrahtungsstruktur (3) sowie mit einem Halbleiterchip (4), der Kontaktflächen (5) aufweist, wobei die äußeren Flächenkontakte (2) mindestens über die Umverdrahtungsstruktur (3) mit den Kontaktflächen (5) elektrisch verbunden sind und wobei die äußeren Flächenkontakte (2) und/oder die Umverdrahtungsstruktur (3) chemisch oder galvanisch selektiv abgeschiedenes Metall aufweisen.
PCT/DE2003/001663 2002-05-29 2003-05-23 Elektronisches bauteil mit äusseren flächenkontakten und verfahren zu seiner herstellung Ceased WO2003103042A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP03755901A EP1508166A2 (de) 2002-05-29 2003-05-23 Elektronisches bauteil mit usseren fl chenkontakten un d verfahren zu seiner herstellung
US10/515,613 US20060091561A1 (en) 2002-05-29 2003-05-23 Electronic component comprising external surface contacts and a method for producing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10224124.4 2002-05-29
DE10224124A DE10224124A1 (de) 2002-05-29 2002-05-29 Elektronisches Bauteil mit äußeren Flächenkontakten und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
WO2003103042A2 WO2003103042A2 (de) 2003-12-11
WO2003103042A3 true WO2003103042A3 (de) 2004-04-08

Family

ID=29557416

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/001663 Ceased WO2003103042A2 (de) 2002-05-29 2003-05-23 Elektronisches bauteil mit äusseren flächenkontakten und verfahren zu seiner herstellung

Country Status (4)

Country Link
US (1) US20060091561A1 (de)
EP (1) EP1508166A2 (de)
DE (1) DE10224124A1 (de)
WO (1) WO2003103042A2 (de)

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US7548430B1 (en) 2002-05-01 2009-06-16 Amkor Technology, Inc. Buildup dielectric and metallization process and semiconductor package
US9691635B1 (en) 2002-05-01 2017-06-27 Amkor Technology, Inc. Buildup dielectric layer having metallization pattern semiconductor package fabrication method
US7633765B1 (en) 2004-03-23 2009-12-15 Amkor Technology, Inc. Semiconductor package including a top-surface metal layer for implementing circuit features
DE10320646A1 (de) * 2003-05-07 2004-09-16 Infineon Technologies Ag Elektronisches Bauteil, sowie Systemträger und Nutzen zur Herstellung desselben
US7425759B1 (en) * 2003-11-20 2008-09-16 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped terminal and filler
US11081370B2 (en) 2004-03-23 2021-08-03 Amkor Technology Singapore Holding Pte. Ltd. Methods of manufacturing an encapsulated semiconductor device
US10811277B2 (en) 2004-03-23 2020-10-20 Amkor Technology, Inc. Encapsulated semiconductor package
DE102004022884B4 (de) * 2004-05-06 2007-07-19 Infineon Technologies Ag Halbleiterbauteil mit einem Umverdrahtungssubstrat und Verfahren zur Herstellung desselben
US7919844B2 (en) * 2005-05-26 2011-04-05 Aprolase Development Co., Llc Tier structure with tier frame having a feedthrough structure
US7768113B2 (en) * 2005-05-26 2010-08-03 Volkan Ozguz Stackable tier structure comprising prefabricated high density feedthrough
DE102006006825A1 (de) * 2006-02-14 2007-08-23 Infineon Technologies Ag Halbleiterbauelement und Verfahren zum Herstellen eines Halbleiterbauelements
DE102006032073B4 (de) * 2006-07-11 2016-07-07 Intel Deutschland Gmbh Elektrisch leitfähiger Verbund aus einem Bauelement und einer Trägerplatte
US7550857B1 (en) * 2006-11-16 2009-06-23 Amkor Technology, Inc. Stacked redistribution layer (RDL) die assembly package
US7868465B2 (en) * 2007-06-04 2011-01-11 Infineon Technologies Ag Semiconductor device with a metallic carrier and two semiconductor chips applied to the carrier
US7955953B2 (en) * 2007-12-17 2011-06-07 Freescale Semiconductor, Inc. Method of forming stacked die package
JP5563814B2 (ja) 2009-12-18 2014-07-30 新光電気工業株式会社 半導体装置及びその製造方法
US8947886B2 (en) * 2011-07-19 2015-02-03 Infineon Technologies Ag Electronic component
KR101340348B1 (ko) 2011-11-30 2013-12-11 주식회사 심텍 마스크 패턴을 이용한 칩 내장형 패키지 기판 및 그 제조방법
KR101488590B1 (ko) 2013-03-29 2015-01-30 앰코 테크놀로지 코리아 주식회사 반도체 디바이스 및 그 제조 방법
EP3198644A4 (de) * 2014-09-26 2018-05-23 Intel Corporation Gehäuse einer integrierten schaltung mit drahtgebondetem multichipstapel
EP3557608A1 (de) * 2018-04-19 2019-10-23 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Verpackte integrierte schaltung mit zwischenschaltfunktionalität und verfahren zur herstellung solch einer verpackten integrierten schaltung

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US20010005044A1 (en) * 1996-04-18 2001-06-28 Joseph Fjelstad Microelectronic assemblies having exposed conductive terminals and methods therefor
US6339261B1 (en) * 1999-04-06 2002-01-15 Shinko Electric Industries Co., Ltd. Semiconductor device and process of producing same
US20010040286A1 (en) * 1999-12-27 2001-11-15 Hiroaki Fujimoto Semiconductor device and method for the fabrication thereof
US20020041019A1 (en) * 2000-08-09 2002-04-11 Gang Heung-Su Semiconductor package having implantable conductive lands and method for manufacturing the same

Also Published As

Publication number Publication date
EP1508166A2 (de) 2005-02-23
US20060091561A1 (en) 2006-05-04
WO2003103042A2 (de) 2003-12-11
DE10224124A1 (de) 2003-12-18

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