WO2003096351A3 - Memoires et circuits de memoires - Google Patents

Memoires et circuits de memoires Download PDF

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Publication number
WO2003096351A3
WO2003096351A3 PCT/IB2003/001748 IB0301748W WO03096351A3 WO 2003096351 A3 WO2003096351 A3 WO 2003096351A3 IB 0301748 W IB0301748 W IB 0301748W WO 03096351 A3 WO03096351 A3 WO 03096351A3
Authority
WO
WIPO (PCT)
Prior art keywords
mram
memory circuits
memories
memory
mrams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2003/001748
Other languages
English (en)
Other versions
WO2003096351A2 (fr
WO2003096351A8 (fr
Inventor
Der Zaag Pieter J Van
Martin J Edwards
Kars-Michiel H Lenssen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US10/513,873 priority Critical patent/US20050157539A1/en
Priority to KR10-2004-7019052A priority patent/KR20050009714A/ko
Priority to EP03715282A priority patent/EP1529290A2/fr
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to JP2004504238A priority patent/JP2005525670A/ja
Priority to AU2003219470A priority patent/AU2003219470A1/en
Publication of WO2003096351A2 publication Critical patent/WO2003096351A2/fr
Anticipated expiration legal-status Critical
Publication of WO2003096351A8 publication Critical patent/WO2003096351A8/fr
Publication of WO2003096351A3 publication Critical patent/WO2003096351A3/fr
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0081—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Liquid Crystal (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Hall/Mr Elements (AREA)
  • Static Random-Access Memory (AREA)

Abstract

L'invention concerne une mémoire vive magnétorésistive qui constitue des circuits de mémoire dans des pixels pour des dispositifs de visualisation. Un circuit de mémoire (25) comprend deux mémoires vives magnétorésistives (60, 62) couplées chacune à une entrée respective d'un circuit de bascule (64). Un dispositif de visualisation (1) comprend plusieurs pixels (20) tous associés à un circuit de mémoire (25). Une de ces mémoires vives magnétorésistives est une mémoire vive pouvant être commutée (60), l'autre mémoire est une mémoire vive magnétorésistive de référence (2) prévue pour constituer une référence qui permet d'observer et de mesurer rapidement sous forme d'un différentiel les changements d'état de la mémoire pouvant être commutée (60).
PCT/IB2003/001748 2002-05-10 2003-04-29 Memoires et circuits de memoires Ceased WO2003096351A2 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US10/513,873 US20050157539A1 (en) 2002-05-10 2003-04-25 Memories and memory circuits
KR10-2004-7019052A KR20050009714A (ko) 2002-05-10 2003-04-25 메모리 회로, 화소 및 화소 내 메모리, 디스플레이디바이스 및 메모리 형성 방법
EP03715282A EP1529290A2 (fr) 2002-05-10 2003-04-25 Memoires et circuits de memoires
JP2004504238A JP2005525670A (ja) 2002-05-10 2003-04-29 メモリおよびメモリ回路
AU2003219470A AU2003219470A1 (en) 2002-05-10 2003-04-29 Memories and memory circuits

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0210719.1A GB0210719D0 (en) 2002-05-10 2002-05-10 Memories and memory circuits
GB0210719.1 2002-05-10

Publications (3)

Publication Number Publication Date
WO2003096351A2 WO2003096351A2 (fr) 2003-11-20
WO2003096351A8 WO2003096351A8 (fr) 2004-12-23
WO2003096351A3 true WO2003096351A3 (fr) 2005-03-17

Family

ID=9936417

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2003/001748 Ceased WO2003096351A2 (fr) 2002-05-10 2003-04-29 Memoires et circuits de memoires

Country Status (8)

Country Link
EP (1) EP1529290A2 (fr)
JP (1) JP2005525670A (fr)
KR (1) KR20050009714A (fr)
CN (1) CN1692447A (fr)
AU (1) AU2003219470A1 (fr)
GB (1) GB0210719D0 (fr)
TW (1) TW200407887A (fr)
WO (1) WO2003096351A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI427596B (zh) * 2009-08-14 2014-02-21 Innolux Corp 顯示裝置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08321016A (ja) * 1995-05-25 1996-12-03 Sanyo Electric Co Ltd 磁気抵抗効果膜
US6191972B1 (en) * 1999-04-30 2001-02-20 Nec Corporation Magnetic random access memory circuit
EP1126468A2 (fr) * 2000-02-04 2001-08-22 Hewlett-Packard Company, A Delaware Corporation Dispositif de mémoire RAM magnétique comprenant des amplificateurs de détection différentiels
US20020008987A1 (en) * 2000-06-19 2002-01-24 Nec Corporation Magnetic random access memory

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08321016A (ja) * 1995-05-25 1996-12-03 Sanyo Electric Co Ltd 磁気抵抗効果膜
US6191972B1 (en) * 1999-04-30 2001-02-20 Nec Corporation Magnetic random access memory circuit
EP1126468A2 (fr) * 2000-02-04 2001-08-22 Hewlett-Packard Company, A Delaware Corporation Dispositif de mémoire RAM magnétique comprenant des amplificateurs de détection différentiels
US20020008987A1 (en) * 2000-06-19 2002-01-24 Nec Corporation Magnetic random access memory

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 04 30 April 1997 (1997-04-30) *

Also Published As

Publication number Publication date
KR20050009714A (ko) 2005-01-25
AU2003219470A1 (en) 2003-11-11
JP2005525670A (ja) 2005-08-25
AU2003219470A8 (en) 2003-11-11
GB0210719D0 (en) 2002-06-19
WO2003096351A2 (fr) 2003-11-20
EP1529290A2 (fr) 2005-05-11
TW200407887A (en) 2004-05-16
WO2003096351A8 (fr) 2004-12-23
CN1692447A (zh) 2005-11-02

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