WO2003100842A1 - Dispositif de traitement de substrats equipe d'un mecanisme de transport - Google Patents

Dispositif de traitement de substrats equipe d'un mecanisme de transport Download PDF

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Publication number
WO2003100842A1
WO2003100842A1 PCT/JP2002/004985 JP0204985W WO03100842A1 WO 2003100842 A1 WO2003100842 A1 WO 2003100842A1 JP 0204985 W JP0204985 W JP 0204985W WO 03100842 A1 WO03100842 A1 WO 03100842A1
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WO
WIPO (PCT)
Prior art keywords
etching
substrate
etched
flow rate
nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/004985
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English (en)
Japanese (ja)
Inventor
Osamu Fujine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Precision Products Co Ltd
Original Assignee
Sumitomo Precision Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Precision Products Co Ltd filed Critical Sumitomo Precision Products Co Ltd
Priority to PCT/JP2002/004985 priority Critical patent/WO2003100842A1/fr
Publication of WO2003100842A1 publication Critical patent/WO2003100842A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces

Definitions

  • the present invention relates to a transfer-type substrate processing apparatus used for manufacturing a glass substrate for a liquid crystal display device, and more particularly, to supply an etching liquid to the surface of a substrate while transferring the substrate in a horizontal direction in a horizontal posture.
  • Transfer type for etching is a transfer-type substrate processing apparatus used for manufacturing a glass substrate for a liquid crystal display device, and more particularly, to supply an etching liquid to the surface of a substrate while transferring the substrate in a horizontal direction in a horizontal posture.
  • the present invention relates to a substrate processing apparatus.
  • a glass substrate used for a liquid crystal display device is manufactured by repeatedly performing various chemical treatments such as etching of a material formed on a surface of a glass substrate as a raw material and separation of a masking material.
  • the processing equipment is roughly divided into dry type and pet type, and pet type is further divided into batch type and single wafer type. Further, the single wafer type is subdivided into a rotary type and a transport type by roller transport or the like.
  • the transport type has a basic configuration in which a processing liquid is supplied to the surface of the substrate while the substrate is transported in a horizontal direction.
  • an etching liquid is sprayed in a shower form from a large number of spray nozzles arranged in a matrix above a substrate transfer line, and the substrate is passed through the etching liquid.
  • the etchant is supplied to the entire surface of the substrate. Due to this shaping process, the surface of the substrate is removed except for the area where the masking material is applied. It is selectively etched. After the etching is completed, a cleaning process using a shower is performed.
  • A1 etchant containing phosphoric acid as the main component is used
  • the etching rate of the etching solution for A1 is higher than the etching rate of Cr by the etching for Cr, whereby a high etching efficiency can be obtained.
  • a shower treatment particularly high etching efficiency is obtained.
  • the side edge surface of the A1 layer after etching has an inappropriate shape for laminating the next layer.
  • FIG. 3 is a cross-sectional view showing the shape of the A1 layer after A1 etching.
  • An A 1 layer 2 and a Mo layer 3 are formed on a glass substrate 1 as a material, and a masking material 4 is coated thereon.
  • the etching removes the A1 layer 2 and the Mo layer 3 in the area where the masking material 4 is not covered, but the remaining side edge surfaces of the A1 layer 2 and the Mo layer 3 are indicated by solid lines.
  • the slope becomes steep.
  • the next layer on A1 layer 2 and Mo layer 3 The layer does not rest stably. In order to mount the next layer stably, it is necessary to make the slope of the side edge surface gentle as shown by the dashed line.
  • the etching solution for A1 has a higher viscosity than the etching for Cr and has poor wettability to the surface of the glass substrate 4. Further, as described above, the etching rate is high. For this reason, at the start of the shower process, the portion where the fine droplets of the etching liquid collided becomes uneven in the process, and remains after the etching without disappearing even in the subsequent sharpening process.
  • An object of the present invention is to apply a high-speed etching process such as A1 etching, in which the inclination of the side edge surface does not become gentle in the shower process, and to make the side edge surface a gentle slope suitable for laminating the next layer.
  • An object of the present invention is to provide a transport-type substrate processing apparatus that can be formed at a high speed, and can also eliminate processing unevenness caused by an initial shower. Disclosure of the invention
  • a transfer-type substrate processing apparatus of the present invention includes an etching line for supplying an etching liquid to a surface of a substrate while transporting the substrate in a substantially horizontal direction in a substantially horizontal direction. It is composed of a just-etched portion for performing the process, and an over-etched portion for imparting a slope to the side edge surface of the etching layer etched in the just-etched portion, and both the just-etched portion and the over-etched portion have
  • an etchant supply means there is provided a slit nozzle which is disposed substantially at a right angle in one or more stages with respect to the substrate transport direction, and supplies a processing liquid in a film form over the entire width direction of the substrate surface, respectively.
  • the flow rate of at least one slit nozzle in the just-etch section is set to be larger than the flow rate of any slit nozzle in the over-etch section.
  • shower treatment was considered to be indispensable for the just-etch, which also has the meaning of removing bubbles.
  • the inclination of the side edge surface of the remaining etching layer does not become gentle as described above. Under such circumstances, the present inventors have studied a method of reducing the inclination of the side edge surface of the remaining etching layer. As a result, the following was found.
  • this chemical knife treatment surprisingly has a large impact force and can secure a high liquid replacement function by increasing the flow rate, so that it is possible to eliminate the adverse effects of bubbles in the just etch.
  • the reaction surface is limited to the side edge surface of the etching layer, so the reaction area is small, the amount of generated bubbles is small, and the generated bubbles are inclined at the side edge surface. It was found that it did not become a major obstacle to the application, and that the problem caused by the bubbles did not appear.
  • the transfer-type substrate processing apparatus of the present invention has been completed based on such knowledge, and has an etching line that includes an etching layer for performing an etching process at a predetermined depth, and an etching layer etched by the just-etching portion.
  • both the just-etch portion and the over-etch portion are formed by slit nozzles arranged at a right angle in one or more stages with respect to the substrate transport direction.
  • the processing solution is supplied in a film form over the entire width of the wafer, and the chemical knife treatment is performed.At the same time, the flow rate in the just-etched section is made larger than the flow rate in the over-etched section.
  • a chemical knife process is performed by a slit nozzle at the entrance of the etching line, and the substrate enters the falling film of the etching liquid. Therefore, the surface of the substrate is first uniformly wetted. Once unevenly wet, no processing unevenness occurs unless drying occurs thereafter. Therefore, the processing unevenness caused by the initial shower is also eliminated.
  • a dynamic primary paddle processing environment that promotes liquid replacement in the just-etch section is basically realized by increasing the flow rate of the etchant.
  • a static secondary paddle processing environment in which the liquid replacement is limited at the overetch portion and the side edge surface of the etching layer is inclined is basically realized by reducing the flow rate of the etching liquid.
  • a dynamic primary paddle processing environment that facilitates liquid replacement in the just-etch section is realized by increasing the flow rate with at least one slit nozzle.
  • a spare nozzle is provided at the entrance of the just-etch section. It is reasonable to provide a main nozzle with a large flow rate after the spare nozzle downstream. In the spare nozzle, the liquid replacement is slightly restricted and the elimination of bubbles is somewhat sacrificed to prevent wetting unevenness as described above. The main nozzle preferentially eliminates bubbles by vigorous liquid replacement, promoting the reaction from this viewpoint. To prevent processing unevenness.
  • the flow rate of the slit nozzle (for example, the main nozzle described above) at the maximum flow rate in the just-etched portion is about the width of the substrate lm
  • the flow rate of the slit nozzle in the overetch portion is preferably 5 to 20 LZ per 1 in of the substrate. If the flow rate in the just etch is too low, the removal of bubbles will be insufficient and the processing efficiency will decrease. If the amount is too large, the undulating and uneven flow of the liquid on the substrate becomes apparent, which may cause uneven etching. On the other hand, if the flow rate in the overetch portion is too small, the liquid replacement on the substrate becomes non-uniform, and the etching itself may be non-uniform. If the amount is too large, the liquid replacement becomes excessive and a sufficient inclination is not given to the side edge surface of the etching layer.
  • the transport type substrate processing apparatus of the present invention is particularly suitable for A1 etching, but can be applied to etching processing in which the inclination of the side edge surface does not become gentle in the sharpening processing, like A1 etching.
  • FIGS. 10 and 11 of Japanese Patent Application Laid-Open No. 2000-114221 A transfer type substrate processing apparatus in which only a slit nozzle is arranged in the whole area of the etching line is described in FIGS. 10 and 11 of Japanese Patent Application Laid-Open No. 2000-114221.
  • the transfer type substrate processing apparatus described here is an inclined transfer type in which a substrate is transferred in a horizontal direction in a posture inclined sideways.
  • a plurality of slit nozzles are arranged on the upper side of the substrate in parallel with the substrate transport direction.
  • the transfer type substrate processing apparatus described in FIGS. 10 and 11 of Japanese Patent Application Laid-Open No. 2000-142221 discloses a substrate processing apparatus which is arranged along one side edge of a substrate inclined sideways.
  • the etching liquid is caused to flow down sideways along the inclination of the substrate from the slit nozzles parallel to the side edges. According to this, the liquid replacement is promoted, and the removal of bubbles is effectively performed.
  • FIG. 1 is a plan view of a transfer type substrate processing apparatus showing one embodiment of the present invention.
  • FIG. 2 is a side view of a main part of the substrate processing apparatus.
  • FIG. 3 is a sectional view showing the shape of the A1 layer after etching.
  • the transport type substrate processing apparatus of the present embodiment is an etching apparatus for performing an A1 etching process on a glass substrate 100 for a liquid crystal display device (hereinafter, simply referred to as a substrate 100Q). As shown in FIG. 1, this substrate processing apparatus has a first linear line A, a second line B connected at right angles to the first line A, and a first line A connected at right angles to the second line B. A U-turn layout that combines the third line -C parallel to A is adopted.
  • the first line A is configured by linearly connecting the receiving part 10, the liquid shielding part 20, and the etching part 30.
  • the second line B is a washing section 40, which is equipped with a shower unit 41 for spraying washing water on the surface of the substrate 100.
  • the third line C is configured by linearly connecting a washing section 50, a final rinse section 60, a drying section 70 using a knife, and a take-out section 80.
  • the drying section 70 is equipped with two inclined slit nozzles 71 and 71 for an air knife.
  • the first line A and the second line B are provided with a large number of transport rollers arranged at predetermined intervals in the transport direction in order to transport the substrate 100 in the longitudinal direction of the line.
  • Each transport roller is a horizontal roll perpendicular to the transport direction.
  • No. 2 A turning mechanism 42 for changing the traveling direction of the substrate 100 by 90 degrees is provided at the line B, that is, at the entrance of the washing section 40.
  • the substrate 100 subjected to the Ai etching process is carried into the receiving unit 10 by the carrier device 90.
  • the substrate 100 enters the etching portion 30 from the liquid dispensing portion 20 by the roller transport, and undergoes an etching process while passing therethrough.
  • the substrate 100 that has passed through the etching section 30 continues to enter the washing section 40 by roller conveyance, changes the traveling direction by 90 degrees, moves through the washing section 40, and further moves in the traveling direction by 90. Then, another washing section 50 is moved, and the washing process is performed during the movement.
  • the etching section 30 has a particularly significant feature. As shown in FIG. 2, the etching unit 30 includes a transport roller 31 that transports the substrate 100 in the horizontal direction. Transport roller 3
  • Reference numeral 1 denotes a large-diameter portion provided at a plurality of positions in the axial direction of the drive shaft, which supports the substrate 100 at points, and flanges provided on both sides support the substrate 100 and position the substrate 100 in the width direction.
  • the etching part 30 is functionally divided into two parts in the substrate transfer direction.
  • the upstream side is a just-etched portion 30A for etching the A1 layer to a predetermined depth
  • the downstream side is an over-etched portion that imparts a slope to the side edge surface of the A1 layer after the just-etch.
  • 30 B In the just-etched section 30A, two slit nozzles 33a, 33b located above the transport line of the substrate 100 are arranged in two stages along the traveling direction of the substrate 10. ing .
  • the first-stage slit nozzle 33a is a spare nozzle located near the entrance of the etching section 30, and the second-stage slit nozzle 33b is the main nozzle.
  • In the overetch portion 30B there are four slit nozzles 33'c to 33f located above the transfer line of the substrate 100, which are relatively dense along the traveling direction of the substrate 100. It is arranged in four steps on the pitch.
  • Each of the six slit nozzles 33a to 33f is a horizontal nozzle perpendicular to the direction of travel of the substrate 100, and the A1 etchant flows down in a film form wider than the entire width of the substrate 100. By doing so, the etchant is supplied linearly over the entire width in a part of the surface of the substrate 10 in the traveling direction.
  • the flow rate of each of the slit nozzles 33a to 33f can be arbitrarily adjusted.
  • the slit nozzles 33a and 33b are arranged in the nozzle section 30A and the overetch section 30B is provided in the slit nozzles 33a and 33b.
  • the number of the slit nozzles 33 c to 33 f arranged in the nozzles is larger than that of the spare nozzle 33 a in the just-etched portion 30 A. That is, the flow rate increases in the order of the slit nozzles 33c to 33f, the slit nozzles 33a, and the slit nozzles 33b, and in the case of the slit nozzles 33a and 33b, the substrate flow rate increases.
  • the etching liquid supplied to the surface of the nozzle is strongly overflowed to both sides, and the slit nozzles 33c to 33f are set so that the etching liquid slightly overflows to both sides.
  • each of the just-etched portion 30A and the over-etched portion 30B is larger than the length of the substrate 100, and each interval between the slit nozzles 33a to 33f is the length of the substrate 100. Less than The distance from the last-stage slit nozzle 33b in the just-etched section 30A to the first-stage slit nozzle 33c in the overetched section 30B maintains the independence of each processing. In order to maintain the length, it is preferable that the length is larger than the length of the substrate 10'0.
  • the number of slit nozzles in the just-etched portion 30A and the over-etched portion 30B is set to two and four in this example, but is appropriately selected based on the required amount of the etching solution, the number of times of solution replacement, and the like. You.
  • a slit type nozzle 34 is arranged near the outlet of the etching unit 30.
  • the air nozzle 34 is a liquid removal device that removes the etching liquid from the surface of the substrate 10 by blowing air linearly over the entire width of a part of the surface of the substrate 10 in the traveling direction.
  • the etching process on the substrate 100 is performed as follows.
  • the substrate 100 which has entered the etching section 30 from the liquid blocking section 20 first passes under the slit nozzles 33a, 33b provided in the upstream of the just-etch section 30A. .
  • the etching liquid for A1 flowing down from the slit nozzles 33a and 33b sequentially passes through the film, and the etching liquid is sequentially supplied from the front end to the surface thereof, and the padding is accompanied by vigorous liquid replacement. Is kept in the default state.
  • the etching liquid for A1 When the etching liquid for A1 is suddenly showered on the surface of the substrate 100, the portion that first receives the droplets remains as processing unevenness, but the substrate 100 flows down from the slit nozzle 33a from the beginning. It passes through the membrane of the etching liquid. Thus, the etchant is uniformly supplied onto the surface of the substrate 100, so that the process unevenness accompanying the shower process of the etchant is prevented.
  • A1 layer or A1ZMo layer formed on the surface of the substrate 100 is selected by the first paddle processing with a chemical knife using the slit nozzles 33a and 33b in the just-etched section 3OA Etched.
  • the flow rate increase promotes the impact force of the A1 etching solution flowing down from the slit nozzles 3, 3a, 33b, drainage to both sides, liquid replacement, etc.
  • the side edge surface of the remaining A1 layer or A1 / Mo layer becomes a steep inclined surface unsuitable for laminating the next layer.
  • the etching liquid for A1 which flows down again from the slit nozzles 33c to 33f in a film form on the surface of the substrate 100 at the over-etched portion 30b are supplied in turn and paddles are held on its surface in a prone position.
  • the etching process progressed slowly, and the remaining side edge surface of the A1 layer or A1ZMo layer was It becomes a gentle slope suitable for lamination.
  • the problem of bubbles is not apparent.
  • the second paddle processing time in the overetch portion 30B is preferably 30 to 70%, more preferably 50 to 60% of the total processing time by the etching solution. If the paddle processing time is too short, the inclination of the side edge surface will not be sufficiently relaxed. However, if it is too long, the etching will be excessive and the required wiring dimensions will not be obtained.
  • the slit width of the slit nozzles 33a to 33f arranged in the etching part 30 is 5 mm, and the temperature of the etching liquid is 40 ° C.
  • the flow rate of the etching solution is 15 LZ for the slit nozzle 33 a, which is a spare nozzle in the just-etched portion 30 A (20.
  • the etching line is formed such that the just-etched portion for performing the etching process at a predetermined depth and the side edge surface of the etching layer etched by the just-etched portion are inclined.
  • the chemical knife process is performed by slit nozzles arranged at right angles to one or more stages with respect to the substrate transfer direction in both the just-etched portion and the over-etched portion.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

L'invention concerne une chaîne de gravure permettant d'appliquer un agent de gravure sur la surface d'un substrat (100) transporté en position horizontale et dans une direction horizontale. Cette chaîne comprend une section de gravure (30A) permettant de réaliser une gravure de profondeur spécifique et une section de gravure superficielle (30B) servant à incliner la surface du bord latéral de la couche de gravure traitée dans ladite section de gravure (30A). La chaîne comprend également des buses à fente (33a-33f) situés dans la section de gravure (30A) et dans la section de gravure superficielle (30B), disposées perpendiculairement à la direction de déplacement du substrat, à une ou plusieurs étapes, permettant d'appliquer une pellicule de liquide de traitement sur toute la surface du substrat dans le sens de la largeur. Le débit du liquide de traitement dans la section de gravure (30A) est supérieur à celui utilisé dans la section de gravure superficielle (30B).
PCT/JP2002/004985 2002-05-23 2002-05-23 Dispositif de traitement de substrats equipe d'un mecanisme de transport Ceased WO2003100842A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2002/004985 WO2003100842A1 (fr) 2002-05-23 2002-05-23 Dispositif de traitement de substrats equipe d'un mecanisme de transport

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2002/004985 WO2003100842A1 (fr) 2002-05-23 2002-05-23 Dispositif de traitement de substrats equipe d'un mecanisme de transport

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WO2003100842A1 true WO2003100842A1 (fr) 2003-12-04

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0418434U (fr) * 1990-06-01 1992-02-17
JP2001077098A (ja) * 1999-09-03 2001-03-23 Toshiba Corp エッチング液、及びこれを用いる薄膜パターンの製造方法
US6329300B1 (en) * 1999-07-29 2001-12-11 Nec Corporation Method for manufacturing conductive pattern layer by two-step wet etching process
JP2002208582A (ja) * 2000-12-11 2002-07-26 Sumitomo Precision Prod Co Ltd 搬送式基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0418434U (fr) * 1990-06-01 1992-02-17
US6329300B1 (en) * 1999-07-29 2001-12-11 Nec Corporation Method for manufacturing conductive pattern layer by two-step wet etching process
JP2001077098A (ja) * 1999-09-03 2001-03-23 Toshiba Corp エッチング液、及びこれを用いる薄膜パターンの製造方法
JP2002208582A (ja) * 2000-12-11 2002-07-26 Sumitomo Precision Prod Co Ltd 搬送式基板処理装置

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