WO2003105543A3 - Verfahren und einrichtung zur reduzierung der zündspannung von plasmen - Google Patents

Verfahren und einrichtung zur reduzierung der zündspannung von plasmen Download PDF

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Publication number
WO2003105543A3
WO2003105543A3 PCT/EP2003/003344 EP0303344W WO03105543A3 WO 2003105543 A3 WO2003105543 A3 WO 2003105543A3 EP 0303344 W EP0303344 W EP 0303344W WO 03105543 A3 WO03105543 A3 WO 03105543A3
Authority
WO
WIPO (PCT)
Prior art keywords
ignition voltage
reducing
plasmas
anode configuration
maintain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2003/003344
Other languages
English (en)
French (fr)
Other versions
WO2003105543A2 (de
Inventor
Ullrich Hartung
Torsten Kopte
Uwe Krause
Matthias List
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to AU2003229584A priority Critical patent/AU2003229584A1/en
Priority to DE10392649T priority patent/DE10392649D2/de
Publication of WO2003105543A2 publication Critical patent/WO2003105543A2/de
Publication of WO2003105543A3 publication Critical patent/WO2003105543A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • C03C17/002—General methods for coating; Devices therefor for flat glass, e.g. float glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/216—ZnO
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd
    • C03C2218/153—Deposition methods from the vapour phase by cvd by plasma-enhanced cvd
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/154—Deposition methods from the vapour phase by sputtering
    • C03C2218/156—Deposition methods from the vapour phase by sputtering by magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Plasma Technology (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)

Abstract

Die Erfindung betrifft ein Verfahren und ein Einrichtung (9) zur Reduzierung der Zündspannung von Plasmen im Vakuum, bei dem zur Zündung des Plasmas eine gegenüber der zur Aufrechterhaltung der Plasmaentladung eingesetzten Anodenkonfiguration (5) veränderte Anodenkonfiguration (10) benutzt wird, die eine wesentlich niedrigere Zündspannung erfordert, als die Anodenkonfiguration (5) zur Aufrechterhaltung der Plasmaentladung.
PCT/EP2003/003344 2002-06-05 2003-03-31 Verfahren und einrichtung zur reduzierung der zündspannung von plasmen Ceased WO2003105543A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2003229584A AU2003229584A1 (en) 2002-06-05 2003-03-31 Method and device for reduction of the ignition voltage of plasmas
DE10392649T DE10392649D2 (de) 2002-06-05 2003-03-31 Verfahren und Einrichtung zur Reduzierung der Zündspannung von Plasmen

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10224991A DE10224991A1 (de) 2002-06-05 2002-06-05 Verfahren und Einrichtung zur Reduzierung der Zündspannung von Plasmen
DE10224991.1 2002-06-05

Publications (2)

Publication Number Publication Date
WO2003105543A2 WO2003105543A2 (de) 2003-12-18
WO2003105543A3 true WO2003105543A3 (de) 2004-04-01

Family

ID=29718860

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/003344 Ceased WO2003105543A2 (de) 2002-06-05 2003-03-31 Verfahren und einrichtung zur reduzierung der zündspannung von plasmen

Country Status (3)

Country Link
AU (1) AU2003229584A1 (de)
DE (2) DE10224991A1 (de)
WO (1) WO2003105543A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008018589A1 (de) * 2008-04-08 2009-11-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Zünden eines Lichtbogens
DE102010038603B4 (de) * 2010-07-29 2016-06-02 Trumpf Huettinger Sp. Z O. O. DC-Plasmaanordnung
DE102010038605B4 (de) * 2010-07-29 2012-06-14 Hüttinger Elektronik Gmbh + Co. Kg Zündschaltung zum Zünden eines mit Wechselleistung gespeisten Plasmas
DE102012206553A1 (de) * 2012-04-20 2013-10-24 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zum Steuern der Schichtdickenverteilung in einer Vakuumbeschichtung
DE102015113104A1 (de) * 2015-08-09 2017-02-09 Isa Installations-, Steuerungs- U. Automatisierungssysteme Gmbh Vorrichtung zum Zünden einer Vakuumbogenentladung und Verfahren zu deren Anwendung

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE899240C (de) * 1942-02-24 1953-12-10 Siemens Ag Elektrischer Metalldampfstromrichter
DE2136532A1 (de) * 1971-07-19 1973-02-08 Sablew Anlage zur auftragung von metallueberzuegen im vakuum
EP0158972A2 (de) * 1984-04-12 1985-10-23 Plasco Dr. Ehrich Plasma-Coating GmbH Verfahren und Vorrichtung zur Materialverdampfung in einer Unterdruckkammer durch Bogenentladung
US4565618A (en) * 1983-05-17 1986-01-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Apparatus for producing diamondlike carbon flakes
EP0285745A1 (de) * 1987-03-06 1988-10-12 Balzers Aktiengesellschaft Verfahren und Vorrichtungen zum Vakuumbeschichten mittels einer elektrischen Bogenentladung
US5441624A (en) * 1992-08-25 1995-08-15 Northeastern University Triggered vacuum anodic arc
EP0978651A1 (de) * 1998-08-06 2000-02-09 DaimlerChrysler Aerospace AG Ionentriebwerk

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD252205B5 (de) * 1986-09-01 1993-12-09 Fraunhofer Ges Forschung Zerstaeubungseinrichtung
DE69007786T2 (de) * 1990-07-09 1994-07-07 Armin Karl Sonnenschein Spannungsversorgungsschaltung für Deuteriumlampe.
DE4102554A1 (de) * 1991-01-29 1992-09-03 Dresden Vakuumtech Gmbh Schaltungsanordnung zum zuenden und betreiben einer hohlkatodenbogenentladung
CH687111A5 (de) * 1992-05-26 1996-09-13 Balzers Hochvakuum Verfahren zum Erzeugen einer Niederspannungsentladung, Vakuumbehandlungsanlage hierfuer sowie Anwendung des Verfahrens.
DE4223505C1 (de) * 1992-07-17 1993-11-04 Fraunhofer Ges Forschung Einrichtung zum aufbringen elektrisch schlecht leitender oder isolierender schichten durch reaktives magnetronsputtern
DE10042629C2 (de) * 2000-08-30 2003-08-28 Angaris Gmbh Zündvorrichtung für einen Lichtbogenverdampfer
DE10051508C2 (de) * 2000-10-18 2003-08-07 Fraunhofer Ges Forschung Verfahren und Einrichtung zur Reduzierung der Zündspannung von Leistungspulsen gepulst betriebener Plasmen

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE899240C (de) * 1942-02-24 1953-12-10 Siemens Ag Elektrischer Metalldampfstromrichter
DE2136532A1 (de) * 1971-07-19 1973-02-08 Sablew Anlage zur auftragung von metallueberzuegen im vakuum
US4565618A (en) * 1983-05-17 1986-01-21 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Apparatus for producing diamondlike carbon flakes
EP0158972A2 (de) * 1984-04-12 1985-10-23 Plasco Dr. Ehrich Plasma-Coating GmbH Verfahren und Vorrichtung zur Materialverdampfung in einer Unterdruckkammer durch Bogenentladung
EP0285745A1 (de) * 1987-03-06 1988-10-12 Balzers Aktiengesellschaft Verfahren und Vorrichtungen zum Vakuumbeschichten mittels einer elektrischen Bogenentladung
US5441624A (en) * 1992-08-25 1995-08-15 Northeastern University Triggered vacuum anodic arc
EP0978651A1 (de) * 1998-08-06 2000-02-09 DaimlerChrysler Aerospace AG Ionentriebwerk

Also Published As

Publication number Publication date
AU2003229584A1 (en) 2003-12-22
AU2003229584A8 (en) 2003-12-22
WO2003105543A2 (de) 2003-12-18
DE10224991A1 (de) 2004-01-08
DE10392649D2 (de) 2005-07-14

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