WO2004010509A3 - Diodes electroluminescentes comprenant des couches/sous-couches barrieres et procedes de fabrication correspondants - Google Patents

Diodes electroluminescentes comprenant des couches/sous-couches barrieres et procedes de fabrication correspondants Download PDF

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Publication number
WO2004010509A3
WO2004010509A3 PCT/US2003/021909 US0321909W WO2004010509A3 WO 2004010509 A3 WO2004010509 A3 WO 2004010509A3 US 0321909 W US0321909 W US 0321909W WO 2004010509 A3 WO2004010509 A3 WO 2004010509A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
layer
emitting diode
barrier layers
manufacturing methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/021909
Other languages
English (en)
Other versions
WO2004010509A2 (fr
Inventor
Jr David B Slater
Bradley E Williams
Peter S Andrews
John A Edmond
Scott T Allen
Jayesh Bharathan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/200,244 external-priority patent/US6740906B2/en
Priority to CA002492249A priority Critical patent/CA2492249A1/fr
Priority to EP10185865.2A priority patent/EP2287930B1/fr
Priority to EP03765562.8A priority patent/EP1523776B1/fr
Priority to JP2004523125A priority patent/JP4602079B2/ja
Priority to AU2003263779A priority patent/AU2003263779A1/en
Application filed by Cree Inc filed Critical Cree Inc
Publication of WO2004010509A2 publication Critical patent/WO2004010509A2/fr
Publication of WO2004010509A3 publication Critical patent/WO2004010509A3/fr
Priority to US11/039,566 priority patent/US7211833B2/en
Anticipated expiration legal-status Critical
Priority to US11/688,605 priority patent/US7611915B2/en
Priority to US12/564,458 priority patent/US8269241B2/en
Priority to US13/586,642 priority patent/US8604502B2/en
Priority to US14/067,395 priority patent/US8907366B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes

Landscapes

  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne des dispositifs électroluminescents à semiconducteur, tels que des diodes électroluminescentes, comprenant un substrat, une zone épitaxiale placée sur le substrat qui comprend une zone électroluminescente telle qu'une zone à diode électroluminescente, et un empilement conducteur multicouche comprenant une couche réfléchissante, placée sur la zone épitaxiale. Une couche barrière est disposée sur la couche réfléchissante et s'étend sur une paroi latérale de la couche réfléchissante. Un empilement conducteur multicouche peut également comprendre une couche ohmique placée entre la zone réfléchissante et la zone épitaxiale. La couche barrière s'étend, en outre, sur une paroi latérale de la couche ohmique. La couche barrière peut également s'étendre sur la zone épitaxiale hors de l'empilement conducteur multicouche. La couche barrière peut être fabriquée à partir d'une série de premières et secondes sous-couches alternées.
PCT/US2003/021909 2001-07-23 2003-07-15 Diodes electroluminescentes comprenant des couches/sous-couches barrieres et procedes de fabrication correspondants Ceased WO2004010509A2 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
CA002492249A CA2492249A1 (fr) 2002-07-22 2003-07-15 Diodes electroluminescentes comprenant des couches/sous-couches barrieres et procedes de fabrication correspondants
EP10185865.2A EP2287930B1 (fr) 2002-07-22 2003-07-15 Diode électroluminescente disposant de couches de barrière et procédé de fabrication correspondant
EP03765562.8A EP1523776B1 (fr) 2002-07-22 2003-07-15 Diode electroluminescente comprenant des couches barrieres et procede de fabrication correspondant
JP2004523125A JP4602079B2 (ja) 2002-07-22 2003-07-15 バリア層を含む発光ダイオードおよびその製造方法
AU2003263779A AU2003263779A1 (en) 2002-07-22 2003-07-15 Light emitting diode including barrier layers and manufacturing methods therefor
US11/039,566 US7211833B2 (en) 2001-07-23 2005-01-20 Light emitting diodes including barrier layers/sublayers
US11/688,605 US7611915B2 (en) 2001-07-23 2007-03-20 Methods of manufacturing light emitting diodes including barrier layers/sublayers
US12/564,458 US8269241B2 (en) 2001-07-23 2009-09-22 Light emitting diodes including barrier layers/sublayers and manufacturing methods therefor
US13/586,642 US8604502B2 (en) 2001-07-23 2012-08-15 Light emitting diodes including barrier sublayers
US14/067,395 US8907366B2 (en) 2001-07-23 2013-10-30 Light emitting diodes including current spreading layer and barrier sublayers

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/200,244 2002-07-22
US10/200,244 US6740906B2 (en) 2001-07-23 2002-07-22 Light emitting diodes including modifications for submount bonding
US45096003P 2003-02-28 2003-02-28
US60/450,960 2003-02-28

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10/200,244 Continuation-In-Part US6740906B2 (en) 2001-07-23 2002-07-22 Light emitting diodes including modifications for submount bonding

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/039,566 Continuation US7211833B2 (en) 2001-07-23 2005-01-20 Light emitting diodes including barrier layers/sublayers

Publications (2)

Publication Number Publication Date
WO2004010509A2 WO2004010509A2 (fr) 2004-01-29
WO2004010509A3 true WO2004010509A3 (fr) 2004-09-23

Family

ID=30772536

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/021909 Ceased WO2004010509A2 (fr) 2001-07-23 2003-07-15 Diodes electroluminescentes comprenant des couches/sous-couches barrieres et procedes de fabrication correspondants

Country Status (6)

Country Link
EP (2) EP1523776B1 (fr)
JP (1) JP4602079B2 (fr)
CN (1) CN100347866C (fr)
AU (1) AU2003263779A1 (fr)
CA (1) CA2492249A1 (fr)
WO (1) WO2004010509A2 (fr)

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US6794684B2 (en) * 2001-02-01 2004-09-21 Cree, Inc. Reflective ohmic contacts for silicon carbide including a layer consisting essentially of nickel, methods of fabricating same, and light emitting devices including the same
US6740906B2 (en) * 2001-07-23 2004-05-25 Cree, Inc. Light emitting diodes including modifications for submount bonding
US7211833B2 (en) 2001-07-23 2007-05-01 Cree, Inc. Light emitting diodes including barrier layers/sublayers
JP2005228924A (ja) * 2004-02-13 2005-08-25 Toshiba Corp 半導体発光素子
US7795623B2 (en) 2004-06-30 2010-09-14 Cree, Inc. Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
WO2006005062A2 (fr) 2004-06-30 2006-01-12 Cree, Inc. Procedes d'encapsulation en boitier-puce de dispositifs electroluminescents et dispositifs electroluminescents encapsules en boitier-puce
US8513686B2 (en) * 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
CN100561758C (zh) * 2004-10-22 2009-11-18 首尔Opto仪器股份有限公司 氮化镓化合物半导体发光元件及其制造方法
US7335920B2 (en) 2005-01-24 2008-02-26 Cree, Inc. LED with current confinement structure and surface roughening
TWI422044B (zh) 2005-06-30 2014-01-01 克立公司 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置
JP5162909B2 (ja) * 2006-04-03 2013-03-13 豊田合成株式会社 半導体発光素子
JP5308618B2 (ja) * 2006-04-26 2013-10-09 日亜化学工業株式会社 半導体発光装置
US20080042145A1 (en) * 2006-08-18 2008-02-21 Helmut Hagleitner Diffusion barrier for light emitting diodes
US7759670B2 (en) * 2007-06-12 2010-07-20 SemiLEDs Optoelectronics Co., Ltd. Vertical LED with current guiding structure
JP2011066296A (ja) * 2009-09-18 2011-03-31 Fuji Xerox Co Ltd 電極コンタクト構造、自己走査型発光素子アレイ
JP4803302B2 (ja) * 2009-12-17 2011-10-26 三菱化学株式会社 窒化物半導体発光素子
JP5932851B2 (ja) * 2011-03-14 2016-06-08 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Ｌｅｄ構造体及びその形成方法
CN102738331A (zh) * 2011-04-08 2012-10-17 新世纪光电股份有限公司 垂直式发光二极管结构及其制作方法
US9269662B2 (en) * 2012-10-17 2016-02-23 Cree, Inc. Using stress reduction barrier sub-layers in a semiconductor die
KR101976450B1 (ko) * 2012-10-19 2019-05-09 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
TWI527263B (zh) 2013-07-17 2016-03-21 新世紀光電股份有限公司 發光二極體結構
CN106449932A (zh) * 2016-11-17 2017-02-22 映瑞光电科技(上海)有限公司 一种垂直结构发光二极管及其制造方法
CN106449955A (zh) * 2016-11-17 2017-02-22 映瑞光电科技(上海)有限公司 一种垂直结构发光二极管及其制造方法
CN108110116B (zh) * 2017-10-20 2020-05-19 华灿光电（浙江）有限公司 一种发光二极管芯片及其制作方法
CN112885822B (zh) * 2020-07-27 2023-08-01 友达光电股份有限公司 显示装置的制造方法
CN115498088B (zh) * 2022-11-16 2023-01-31 镭昱光电科技(苏州)有限公司 微型发光二极管及制备方法
CN116646435B (zh) * 2023-07-26 2023-09-19 江西兆驰半导体有限公司 一种倒装发光二极管芯片及其制备方法

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US4238764A (en) * 1977-06-17 1980-12-09 Thomson-Csf Solid state semiconductor element and contact thereupon
US4441187A (en) * 1980-07-31 1984-04-03 Bouley Jean Claude A semiconductor laser light source
JPH11121803A (ja) * 1997-10-16 1999-04-30 Hitachi Cable Ltd 発光ダイオード及びその製造方法
JPH11220168A (ja) * 1998-02-02 1999-08-10 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体素子及びその製造方法
JPH11340514A (ja) * 1998-05-22 1999-12-10 Nichia Chem Ind Ltd フリップチップ型光半導体素子
WO2001047039A1 (fr) * 1999-12-22 2001-06-28 Lumileds Lighting, U.S., Llc Procede de fabrication d'un dispositif emetteur de lumiere a base de nitrure iii et a plus grande capacite de generation de lumiere
JP2001291899A (ja) * 2000-04-07 2001-10-19 Sanken Electric Co Ltd 半導体発光素子
WO2002075819A2 (fr) * 2001-03-15 2002-09-26 Osram Opto Semiconductors Gmbh Composant optique emettant un rayonnement
WO2002101841A1 (fr) * 2001-06-06 2002-12-19 Toyoda Gosei Co., Ltd. Element semi-conducteur luminescent a base de nitrure du groupe iii
WO2003010817A2 (fr) * 2001-07-23 2003-02-06 Cree, Inc. Diodes electroluminescentes comprenant des modifications pour liaison d'embase et procedes de fabrication correspondants

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US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6747298B2 (en) 2001-07-23 2004-06-08 Cree, Inc. Collets for bonding of light emitting diodes having shaped substrates
US6888167B2 (en) 2001-07-23 2005-05-03 Cree, Inc. Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding

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Publication number Priority date Publication date Assignee Title
US3894919A (en) * 1974-05-09 1975-07-15 Bell Telephone Labor Inc Contacting semiconductors during electrolytic oxidation
US4238764A (en) * 1977-06-17 1980-12-09 Thomson-Csf Solid state semiconductor element and contact thereupon
US4441187A (en) * 1980-07-31 1984-04-03 Bouley Jean Claude A semiconductor laser light source
JPH11121803A (ja) * 1997-10-16 1999-04-30 Hitachi Cable Ltd 発光ダイオード及びその製造方法
JPH11220168A (ja) * 1998-02-02 1999-08-10 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体素子及びその製造方法
JPH11340514A (ja) * 1998-05-22 1999-12-10 Nichia Chem Ind Ltd フリップチップ型光半導体素子
WO2001047039A1 (fr) * 1999-12-22 2001-06-28 Lumileds Lighting, U.S., Llc Procede de fabrication d'un dispositif emetteur de lumiere a base de nitrure iii et a plus grande capacite de generation de lumiere
JP2001291899A (ja) * 2000-04-07 2001-10-19 Sanken Electric Co Ltd 半導体発光素子
WO2002075819A2 (fr) * 2001-03-15 2002-09-26 Osram Opto Semiconductors Gmbh Composant optique emettant un rayonnement
WO2002101841A1 (fr) * 2001-06-06 2002-12-19 Toyoda Gosei Co., Ltd. Element semi-conducteur luminescent a base de nitrure du groupe iii
EP1406313A1 (fr) * 2001-06-06 2004-04-07 Toyoda Gosei Co., Ltd. Element semi-conducteur luminescent a base de nitrure du groupe iii
WO2003010817A2 (fr) * 2001-07-23 2003-02-06 Cree, Inc. Diodes electroluminescentes comprenant des modifications pour liaison d'embase et procedes de fabrication correspondants

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PATENT ABSTRACTS OF JAPAN vol. 1999, no. 13 30 November 1999 (1999-11-30) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 03 30 March 2000 (2000-03-30) *
PATENT ABSTRACTS OF JAPAN vol. 2002, no. 02 2 April 2002 (2002-04-02) *

Also Published As

Publication number Publication date
AU2003263779A1 (en) 2004-02-09
WO2004010509A2 (fr) 2004-01-29
CA2492249A1 (fr) 2004-01-29
EP2287930B1 (fr) 2019-06-05
EP1523776B1 (fr) 2019-05-15
JP2006502563A (ja) 2006-01-19
CN100347866C (zh) 2007-11-07
AU2003263779A8 (en) 2004-02-09
EP2287930A1 (fr) 2011-02-23
EP1523776A2 (fr) 2005-04-20
CN1672268A (zh) 2005-09-21
JP4602079B2 (ja) 2010-12-22

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