WO2004013693A3 - Alignement par diffusiometrie pour lithographie par empreinte - Google Patents

Alignement par diffusiometrie pour lithographie par empreinte Download PDF

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Publication number
WO2004013693A3
WO2004013693A3 PCT/US2003/023948 US0323948W WO2004013693A3 WO 2004013693 A3 WO2004013693 A3 WO 2004013693A3 US 0323948 W US0323948 W US 0323948W WO 2004013693 A3 WO2004013693 A3 WO 2004013693A3
Authority
WO
WIPO (PCT)
Prior art keywords
imprint lithography
scatterometry
alignment
liquid
template
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/023948
Other languages
English (en)
Other versions
WO2004013693A2 (fr
Inventor
Michael P C Watts
Ian Mcmackin
Sidlgata V Sreenivasan
Byung-Jin Choi
Ronald D Voisin
Norman E Schumaker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Nanotechnologies Inc
Original Assignee
Molecular Imprints Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/210,894 external-priority patent/US7070405B2/en
Priority claimed from US10/210,785 external-priority patent/US7027156B2/en
Priority claimed from US10/210,780 external-priority patent/US6916584B2/en
Application filed by Molecular Imprints Inc filed Critical Molecular Imprints Inc
Priority to EP03767009A priority Critical patent/EP1573395A4/fr
Priority to JP2004526254A priority patent/JP2006516065A/ja
Priority to AU2003261317A priority patent/AU2003261317A1/en
Publication of WO2004013693A2 publication Critical patent/WO2004013693A2/fr
Anticipated expiration legal-status Critical
Publication of WO2004013693A3 publication Critical patent/WO2004013693A3/fr
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)

Abstract

L'invention se rapporte à des procédés de dessin de motifs sur un substrat par lithographie par empreinte. La lithographie par empreinte est un processus consistant à répandre un liquide sur un substrat. Un gabarit est mis en contact avec le liquide et le liquide est durci. Le liquide durci comprend une empreinte de tout motif formé sur le gabarit. L'alignement du gabarit avec une couche formée au préalable sur un substrat, dans un mode de réalisation, est effectué par diffusiométrie.
PCT/US2003/023948 2002-08-01 2003-07-31 Alignement par diffusiometrie pour lithographie par empreinte Ceased WO2004013693A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03767009A EP1573395A4 (fr) 2002-08-01 2003-07-31 Alignement par diffusiometrie pour lithographie par empreinte
JP2004526254A JP2006516065A (ja) 2002-08-01 2003-07-31 インプリント・リソグラフィの散乱計測アラインメント
AU2003261317A AU2003261317A1 (en) 2002-08-01 2003-07-31 Scatterometry alignment for imprint lithography

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US10/210,894 US7070405B2 (en) 2002-08-01 2002-08-01 Alignment systems for imprint lithography
US10/210,785 US7027156B2 (en) 2002-08-01 2002-08-01 Scatterometry alignment for imprint lithography
US10/210,780 2002-08-01
US10/210,780 US6916584B2 (en) 2002-08-01 2002-08-01 Alignment methods for imprint lithography
US10/210,785 2002-08-01
US10/210,894 2002-08-01

Publications (2)

Publication Number Publication Date
WO2004013693A2 WO2004013693A2 (fr) 2004-02-12
WO2004013693A3 true WO2004013693A3 (fr) 2006-01-19

Family

ID=31499238

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/023948 Ceased WO2004013693A2 (fr) 2002-08-01 2003-07-31 Alignement par diffusiometrie pour lithographie par empreinte

Country Status (6)

Country Link
EP (1) EP1573395A4 (fr)
JP (2) JP2006516065A (fr)
KR (1) KR20050026088A (fr)
AU (1) AU2003261317A1 (fr)
TW (1) TWI266970B (fr)
WO (1) WO2004013693A2 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US7037639B2 (en) 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US7070405B2 (en) 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US7090716B2 (en) 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7098572B2 (en) 1999-10-29 2006-08-29 Board Of Regents, The University Of Texas System Apparatus to control displacement of a body spaced-apart from a surface
US7179079B2 (en) 2002-07-08 2007-02-20 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US7692771B2 (en) 2005-05-27 2010-04-06 Asml Netherlands B.V. Imprint lithography
US7708924B2 (en) 2005-07-21 2010-05-04 Asml Netherlands B.V. Imprint lithography

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JP2004505273A (ja) 2000-08-01 2004-02-19 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム 転写リソグラフィのための透明テンプレートと基板の間のギャップおよび配向を高精度でセンシングするための方法
US6964793B2 (en) 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
US6926929B2 (en) 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US6908861B2 (en) 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US7442336B2 (en) * 2003-08-21 2008-10-28 Molecular Imprints, Inc. Capillary imprinting technique
DE10311855B4 (de) 2003-03-17 2005-04-28 Infineon Technologies Ag Anordnung zum Übertragen von Informationen/Strukturen auf Wafer unter Verwendung eines Stempels
US7261830B2 (en) 2003-10-16 2007-08-28 Molecular Imprints, Inc. Applying imprinting material to substrates employing electromagnetic fields
KR100585951B1 (ko) * 2004-02-18 2006-06-01 한국기계연구원 조합/분리형 독립구동이 가능한 복수 개의 모듈을 갖는 임프린팅 장치
JP2006013400A (ja) * 2004-06-29 2006-01-12 Canon Inc ２つの対象物間の相対的位置ずれ検出方法及び装置
US20060062922A1 (en) 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US7630067B2 (en) * 2004-11-30 2009-12-08 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US7292326B2 (en) * 2004-11-30 2007-11-06 Molecular Imprints, Inc. Interferometric analysis for the manufacture of nano-scale devices
KR20070086766A (ko) * 2004-12-01 2007-08-27 몰레큘러 임프린츠 인코퍼레이티드 임프린트 리소그래피 공정용 열관리를 위한 노출 방법
JP4500183B2 (ja) * 2005-02-25 2010-07-14 東芝機械株式会社 転写装置
KR100729427B1 (ko) 2005-03-07 2007-06-15 주식회사 디엠에스 미세패턴 형성장치
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JP4848832B2 (ja) * 2006-05-09 2011-12-28 凸版印刷株式会社 ナノインプリント装置及びナノインプリント方法
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TWI266970B (en) 2006-11-21
AU2003261317A8 (en) 2004-02-23
EP1573395A2 (fr) 2005-09-14
WO2004013693A2 (fr) 2004-02-12
JP2006516065A (ja) 2006-06-15
JP5421221B2 (ja) 2014-02-19
TW200406651A (en) 2004-05-01
JP2011101016A (ja) 2011-05-19
EP1573395A4 (fr) 2010-09-29
KR20050026088A (ko) 2005-03-14
AU2003261317A1 (en) 2004-02-23

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