WO2004014785A3 - Verfahren und herstellung wenigstens einer kleinen öffnung in einer schicht auf einem substrat und damit hergestellte bauelemente - Google Patents

Verfahren und herstellung wenigstens einer kleinen öffnung in einer schicht auf einem substrat und damit hergestellte bauelemente Download PDF

Info

Publication number
WO2004014785A3
WO2004014785A3 PCT/DE2003/002626 DE0302626W WO2004014785A3 WO 2004014785 A3 WO2004014785 A3 WO 2004014785A3 DE 0302626 W DE0302626 W DE 0302626W WO 2004014785 A3 WO2004014785 A3 WO 2004014785A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
substrate
produced according
producing
small opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2003/002626
Other languages
English (en)
French (fr)
Other versions
WO2004014785A2 (de
Inventor
Egbert Oesterschulze
Rainer Kassing
Georgi Georgiev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universitaet Kassel
Original Assignee
Universitaet Kassel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universitaet Kassel filed Critical Universitaet Kassel
Priority to EP03783954A priority Critical patent/EP1527012A2/de
Priority to JP2004526631A priority patent/JP2005535137A/ja
Priority to US10/523,468 priority patent/US20060165957A1/en
Publication of WO2004014785A2 publication Critical patent/WO2004014785A2/de
Anticipated expiration legal-status Critical
Publication of WO2004014785A3 publication Critical patent/WO2004014785A3/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/16—Probe manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00087—Holes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q40/00—Calibration, e.g. of probes
    • G01Q40/02—Calibration standards and methods of fabrication thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
    • G01Q60/18—SNOM [Scanning Near-Field Optical Microscopy] or apparatus therefor, e.g. SNOM probes
    • G01Q60/22—Probes, their manufacture, or their related instrumentation, e.g. holders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Radiology & Medical Imaging (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Es wird ein Verfahren zur Herstellung wenigstens einer kleinen Öffnung (10) in einer Schicht auf einem Substrat (1), insbesondere einem Halbleitersubstrat, beschrieben. Das Substrat (1) wird auf der Oberseite (2) mit wenigstens einer spitz zulaufenden, einen Spitzenabschnitt (4) und Seitenwände (5) aufweisenden Vertiefung (6) versehen, und die Oberseite (2) des Substrats (1) wird zumindest im Bereich der Vertiefung (6) mit einer Schicht (7) aus einem ätzbaren Material belegt. Erfindungsgemäss wird die Öffnung (10) mittels eines auf das Material der Schicht (7) abgestimmten, anisotropen Plasma-Ätz­verfahrens von der Oberseite (2) her durch selektives Öffnen der Schicht (7) hergestellt, indem das Material, die Ätzgase und die Ätzparameter so gewählt werden, daß sich im Bereich eines dem Spitzenabschnitt (4) des Substrats (1) aufliegenden Spitzenabschnitts (9) der Schicht (7) eine grössere Ätzrate als im Bereich von den Seitenwänden (5) des Substrats (1) aufliegenden Seitenwänden (8) der Schicht (7) ergibt. Ausserdem werden nach diesem Verfahren hergestellte Kalibrierstandards, Biegebalken und andere Bauelemente beschrieben (Fig. 1).
PCT/DE2003/002626 2002-08-05 2003-08-04 Verfahren und herstellung wenigstens einer kleinen öffnung in einer schicht auf einem substrat und damit hergestellte bauelemente Ceased WO2004014785A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP03783954A EP1527012A2 (de) 2002-08-05 2003-08-04 Verfahren und herstellung wenigstens einer kleinen öffnung in einer schicht auf einem substrat und damit hergestellte bauelemente
JP2004526631A JP2005535137A (ja) 2002-08-05 2003-08-04 基板上の層に少なくとも１つの小開口を作るための方法およびかかる方法で製造されたコンポーネントパーツ
US10/523,468 US20060165957A1 (en) 2002-08-05 2003-08-04 Method for producing at least one small opening in a layer on a substrate and components produced according ot said method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10236150A DE10236150A1 (de) 2002-08-05 2002-08-05 Verfahren zur Herstellung wenigstens einer kleinen Öffnung in einer Schicht auf einem Substrat und damit hergestellte Bauelemente
DE10236150.9 2002-08-05

Publications (2)

Publication Number Publication Date
WO2004014785A2 WO2004014785A2 (de) 2004-02-19
WO2004014785A3 true WO2004014785A3 (de) 2005-02-10

Family

ID=30775064

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/002626 Ceased WO2004014785A2 (de) 2002-08-05 2003-08-04 Verfahren und herstellung wenigstens einer kleinen öffnung in einer schicht auf einem substrat und damit hergestellte bauelemente

Country Status (5)

Country Link
US (1) US20060165957A1 (de)
EP (1) EP1527012A2 (de)
JP (1) JP2005535137A (de)
DE (1) DE10236150A1 (de)
WO (1) WO2004014785A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2371674C1 (ru) * 2008-06-25 2009-10-27 Институт физики полупроводников Сибирского отделения Российской академии наук Способ изготовления ступенчатого высотного калибровочного стандарта для профилометрии и сканирующей зондовой микроскопии
RU2407101C1 (ru) * 2009-09-07 2010-12-20 Учреждение Российской академии наук Институт физики полупроводников им. А.В. Ржанова Сибирского отделения РАН (ИФП СО РАН) Способ изготовления ступенчатого высотного калибровочного стандарта для профилометрии и сканирующей зондовой микроскопии
RU2540000C1 (ru) * 2013-10-01 2015-01-27 Федеральное государственное бюджетное учреждение науки Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук (ИФП СО РАН) Способ изготовления ступенчатого высотного калибровочного стандарта для профилометрии и сканирующей зондовой микроскопии
US10144633B2 (en) * 2016-02-25 2018-12-04 Universiteit Twente Method of manufacturing a plurality of through-holes in a layer of material
EP3210937B1 (de) * 2016-02-25 2018-09-05 SmartTip B.V. Verfahren zur herstellung mehrerer durchgangslöcher in einer schicht
RU2649058C1 (ru) * 2017-02-15 2018-03-29 Федеральное государственное бюджетное учреждение науки Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук (ИФП СО РАН) Способ изготовления ступенчатого высотного калибровочного эталона и ступенчатый высотный калибровочный эталон
NL2026730B1 (en) 2020-10-22 2022-06-16 Cytosurge Ag A method of manufacturing a MEMS device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US5770465A (en) * 1995-06-23 1998-06-23 Cornell Research Foundation, Inc. Trench-filling etch-masking microfabrication technique
US6156215A (en) * 1997-08-26 2000-12-05 Canon Kabushiki Kaisha Method of forming a projection having a micro-aperture, projection formed thereby, probe having such a projection and information processor comprising such a probe

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US501893A (en) * 1893-07-18 Eraser-holder
US5221415A (en) * 1989-01-17 1993-06-22 Board Of Trustees Of The Leland Stanford Junior University Method of forming microfabricated cantilever stylus with integrated pyramidal tip
DE68902141T2 (de) * 1989-08-16 1993-02-25 Ibm Verfahren fuer die herstellung mikromechanischer messfuehler fuer afm/stm-profilometrie und mikromechanischer messfuehlerkopf.
JP3053456B2 (ja) * 1990-08-31 2000-06-19 オリンパス光学工業株式会社 走査型プローブ顕微鏡用カンチレバー及びその作製方法
JP2002524295A (ja) * 1998-09-12 2002-08-06 ユニバーズィテート ゲゼームトクシューレ カッセル 半導体材料における開口及びその製造方法並びにその使用

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US5770465A (en) * 1995-06-23 1998-06-23 Cornell Research Foundation, Inc. Trench-filling etch-masking microfabrication technique
US6156215A (en) * 1997-08-26 2000-12-05 Canon Kabushiki Kaisha Method of forming a projection having a micro-aperture, projection formed thereby, probe having such a projection and information processor comprising such a probe

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GEORGIEV G ET AL: "Lithography-free fabrication of sub-100 nm structures by self-aligned plasma etching of silicon dioxide layers and silicon", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B: MICROELECTRONICS PROCESSING AND PHENOMENA, AMERICAN VACUUM SOCIETY, NEW YORK, NY, US, vol. 21, no. 4, July 2003 (2003-07-01), pages 1361 - 1363, XP012009939, ISSN: 0734-211X *
LAERME F ET AL: "Bosch deep silicon etching: improving uniformity and etch rate for advanced MEMS applications", TECHNICAL DIGEST. IEEE INTERNATIONAL MEMS 99 CONFERENCE. TWELFTH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (CAT. NO.99CH36291) IEEE PISCATAWAY, NJ, USA, 17 January 1999 (1999-01-17) - 21 January 1999 (1999-01-21), pages 211 - 216, XP002310783, ISBN: 0-7803-5194-0 *
OLSCHIMKE J ET AL: "FABRICATION OF 15 MUM THICK SI-HOLE MASKS FOR DEMAGNIFYING PROJECTION SYSTEMS FOR ION- OR ELECTRON-BEAMS", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 6, no. 1-4, December 1987 (1987-12-01), pages 547 - 552, XP000819923, ISSN: 0167-9317 *

Also Published As

Publication number Publication date
EP1527012A2 (de) 2005-05-04
DE10236150A1 (de) 2004-02-26
WO2004014785A2 (de) 2004-02-19
US20060165957A1 (en) 2006-07-27
JP2005535137A (ja) 2005-11-17

Similar Documents

Publication Publication Date Title
WO2002073705A3 (de) Strahlungsemittierendes halbleiterbauelement und verfahren zu dessen herstellung
WO2001071779A3 (en) Method and apparatus for planarizing a semiconductor contactor
EP1096547A3 (de) Verfahren und Vorrichtung zum Plasmaätzen
WO2002009167A3 (en) High dielectric constant metal silicates formed by controlled metal-surface reactions
WO2001082359A3 (en) Method of making a semiconductor device having a recessed insulating layer of varying thickness
AU3866999A (en) Method of forming high aspect ratio apertures
WO2002051741A3 (de) Verfahren zur herstellung eines halbleiterbauelements sowie ein nach dem verfahren hergestelltes halbleiterbauelement, wobei das halbleiterbauelement insbesondere eine bewegliche masse aufweist
WO2005008767A3 (en) Metal bump with an insulation for the side walls and method of fabricating a chip with such a metal bump
WO2004109772A3 (en) Method and system for etching a high-k dielectric material
WO2003030238A1 (en) Processing method
WO2003038153A8 (en) Process for low temperature, dry etching, and dry planarization of copper
EP0814501A3 (de) Verfahren zum Ätzen von Metallsiliziden mit hoher Selektivität zum Polysilizium
WO2004032209A3 (en) Method of etching shaped features on a substrate
WO2004014785A3 (de) Verfahren und herstellung wenigstens einer kleinen öffnung in einer schicht auf einem substrat und damit hergestellte bauelemente
WO2007017404A3 (de) Anordnung zur hermetischen abdichtung von bauelementen und verfahren zu deren herstellung
ATE252225T1 (de) Verfahren zum erzeugen eines mikro- elektromechanischen elements
WO2002092516A3 (en) Liquid crystal assembly and method of making
WO2005062885A3 (en) Selectivity control in a plasma processing system
WO2004099063A3 (de) Strahlungssensor, wafer, sensormodul und verfahren zur herstellung eines strahlungssensors
WO2004071941A3 (de) Verfahren zur herstellung einer mikromechanischen vorrichtung und vorrichtung
WO2002051742A3 (de) Mikromechanisches bauelement und entsprechendes herstellungsverfahren
WO2003067241A3 (de) Gassensor und verfahren zu seiner herstellung
WO2006094487A3 (de) Verfahren zum herstellen eines bauelements
WO2006121563A3 (en) Method and system for line-dimension control of an etch process
EP0964440A3 (de) Ätzverfahren zur Behandlung eines Substrates, Trockenätzverfahren für eine polyetheramid-Harzschicht, Herstellungsverfahren für einen Tintenstrahl-Druckkopf, Tintenstrahlkopf und Tintenstrahl-Druckgerät

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003783954

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2004526631

Country of ref document: JP

WWP Wipo information: published in national office

Ref document number: 2003783954

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2006165957

Country of ref document: US

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 10523468

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 10523468

Country of ref document: US

WWW Wipo information: withdrawn in national office

Ref document number: 2003783954

Country of ref document: EP