WO2004033763A1 - カップ式めっき装置 - Google Patents
カップ式めっき装置 Download PDFInfo
- Publication number
- WO2004033763A1 WO2004033763A1 PCT/JP2002/010595 JP0210595W WO2004033763A1 WO 2004033763 A1 WO2004033763 A1 WO 2004033763A1 JP 0210595 W JP0210595 W JP 0210595W WO 2004033763 A1 WO2004033763 A1 WO 2004033763A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plating
- tank
- plating solution
- cavity
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
- H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
Definitions
- the present invention relates to a plating apparatus for plating a metal or a semiconductor wafer, and more particularly to a so-called cup-type plating apparatus.
- Conventional technology for plating a metal or a semiconductor wafer, and more particularly to a so-called cup-type plating apparatus.
- the cup-type plating apparatus 100 used for plating a wafer or the like.
- the cup-type plating apparatus 100 includes a plating tank 101 and a wafer mounting part 106 provided at an upper end opening of the plating tank 101.
- An anode 105 which is one electrode for electroplating, is installed in the plating tank.
- a force sword cathode
- a seal packing 107 and the like, which are the other electrodes, are attached to the mounting portion 106.
- the wafer W is placed on the mounting part, and the surface Ws to be plated of the wafer W is brought into contact with the plating solution in the plating bath. Processing is performed.
- this cup-type plating device was formed near the opening at the upper end of the side wall 103 of the plating bath 101, which was connected to the bottom of the plating bath 101, and was connected to the bottom of the plating bath 101. It has an outlet 104. Therefore, the plating process can be performed while the fresh tanning liquid is continuously supplied from the supply pipe 102. The supplied liquid flows in an upward flow toward the surface to be plated, and then flows radially to the outer peripheral side of the plating tank (see Japanese Patent Application Laid-Open No. 2002-177394).
- the plating process when the plating process is performed while the plating solution is continuously supplied, there is an advantage that the plating process can be performed more quickly.
- the plating process is performed while the plating solution is continuously supplied, There may be uneven plating due to the flow of the liquid.
- plating unevenness and unevenness such as a thicker plating film than in the central portion are likely to occur.
- the present invention has been made in view of the above background, and has as its object to provide a cup-type mounting apparatus capable of performing plating with a more uniform film thickness over the entire surface to be plated. . Disclosure of the invention
- the inventor of the present invention has intensively studied a method for improving the flow of the plating solution near the outlet.
- the shape and opening area of the plating solution outlet which is the plating solution outlet in the cavity where the plating solution flowing from the outlet of the plating tank is stored, the entire surface of the plating object to be plated is adjusted.
- the present invention provides a plating tank in which a plating solution is stored, a mounting portion for an object to be plated provided at an opening end of the plating tank, means for supplying the plating solution into the plating tank, and an inner peripheral surface of the plating tank.
- a plating tank for recovering the plating solution The plating solution is supplied to the plating tank by the means for supplying the plating solution, and the plating object placed on the mounting portion is plated.
- a force-up type plating apparatus characterized in that it has a structure capable of changing the shape and shape of the outlet or opening area.
- the reason for this is not clear, but may be as follows.
- the plating solution L is discharged from the discharge port 31 and the liquid level Ls of the plating solution L in the cavity 16 decreases.
- the pressure in the space E above the plating solution L decreases (a negative pressure is generated).
- the pressure difference between the space E in the cavity 16 (outside the plating tank) and the plating tank 10 increases, and the plating tank 10 and the cavity 16
- the liquid L can easily flow out through the outlet 11.
- the inflow of the plating solution L in the cavity 16 increases, and a decrease in the plating solution level Ls is suppressed.
- the liquid level height of the plating solution L in the cavity 16 is determined by the balance between the inflow of the plating solution from the outlet 11 and the discharge from the outlet.
- the flow of the plating solution at the outlet of the plating tank is adjusted and the outlet of the plating tank is controlled.
- the state of the flow of the plating solution in the adjacent region that is, the region near the outer periphery in the plating tank changes. This region is a region adjacent to the outer peripheral portion of the plating target surface.
- the state of the flow of the plating solution in the region can be changed, the plating state at the outer peripheral portion of the plating target surface can be adjusted, and the outer periphery of the plating target surface can be adjusted. Variations in plating thickness, such as the plating film thickness in the part being larger than the central part, can be prevented. From these facts, it is considered that by adjusting the shape and / or opening area of the discharge port of the cavity, it is possible to perform plating with a uniform film thickness over the entire surface to be plated. Various structures are conceivable for changing the shape and Z or opening area of the discharge port.
- a hole is formed at a predetermined position on the inner wall of the cavity, and a hole piece having a discharge port of a predetermined size is detachably mounted in the hole.
- the shape and Z or opening area of the outlet can be easily and quickly changed by installing a hole piece with a desired shape or a desired opening area as needed. , Can be adjusted or set.
- the cavity is preferably formed so as to surround the plating tank. If this is the case, an outlet can be formed over the entire outer peripheral surface of the plating tank, and from any position in the outer peripheral area of the plating tank, the liquid can be attached to the outside of the plating tank via the outlet. Because it can be discharged.
- the flow of the plating solution in the outer peripheral region in the plating tank becomes smoother and more uniform, and the occurrence of unevenness in the plating film thickness in the outer peripheral portion of the plating target surface becomes more reliable. Is prevented.
- the downstream side in the plating solution flow direction is a position near the bottom of the plating tank, such as the lower end of the cavity.
- FIG. 1 is a front cross-sectional view showing a cross-sectional structure of a power-up type plating apparatus of the present embodiment.
- FIG. 2 is a cross-sectional view showing a main structure of the mounting portion.
- FIG. 3 is a plan view showing a plate having a discharge port.
- FIG. 4 is a cross-sectional view showing the A-A plane of FIG.
- FIG. 5 is an explanatory diagram showing the state of the plating solution in the cavity.
- FIG. 6 is a cross-sectional view showing a conventional cup-type plating device.
- the cup-type plating apparatus 1 has a plating tank 10 in which a plating solution is stored.
- the circular opening at the upper end of the plating tank 10 is provided with a mounting portion 20 on which an object to be plated such as a wafer 1 W is mounted.
- the mounting portion 20 includes a ring-shaped mounting table 21 extending along the opening edge, a seal packing 22 installed on the mounting table 21, and a seal packing 22.
- a force sword 23 manufactured by Au
- a top ring 25 is pressed against the upper side of the outer periphery of the force sword 23 via a packing 24.
- the seal packing 22 and the force sword 23 are fixed to the plating tank 10 by the top ring 25 and the mounting table 21.
- the anode 26, which is the other electrode for electrolytic plating, is installed at the bottom in the plating tank 10.
- Reference numeral “27” denotes a holding member for pressing the substrate W against the mounting portion 20 and fixing the substrate W to the plating tank 10.
- a plating solution supply pipe 28 is connected to the center of the bottom surface 10 a of the plating tank 10.
- the plating solution in the tank T is sent from the pump P to the supply pipe 28 via the pipe 29 so that the plating solution can be continuously supplied from the supply pipe 28 into the plating tank 10.
- a plating solution outlet 11 is provided at a position adjacent to the upper end opening of the side wall of the plating tank 10.
- the plating solution in the plating tank 10 can be drained out of the tank by plating.
- the flow of the metal ions (or current) supplied from the anode 26 and the flow of the plating solution supplied from the supply pipe 28 are located above the supply pipe 28.
- a damper (rectifying means) 12 that has the function of rectifying air is installed.
- the damper 12 is formed by forming a large number of circular through holes in a circular plate, and two dampers 12 are installed in the mounting tank 10 of the present embodiment in a state where two dampers 12 are stacked. I have. As shown in FIG. 1, a cylindrical outer cover 15 surrounding the plating tank 10 is provided outside the plating tank 10. Further, a cavity 16 used as a flow path for the plating solution is formed between the plating tank 10 and the outer cover 15. The hollow section 16 has a ring-shaped horizontal cross section, and the upper end is closed by the mounting section 20. Further, the cavity 16 is located at a position near the upper end and communicates with the inside of the plating tank 10 via the outlet 11. That is, the plating solution flowing out of the outlet flows into the cavity 16.
- An annular plate 30 having a plurality of outlets 31 is attached to the lower end of the hollow portion 16 (positioned near the bottom of the plating tank). Therefore, the plating solution that has flowed into the cavity 16 is discharged from the outlet 31 below the plating tank 10.
- the cavity 16 has a structure connected to the outside only by the outlet 11 and the outlet 31.
- the plate 30 has four discharge ports 31 of the same shape formed at equal intervals. These four discharge ports 31 are arranged so as to surround the plating tank 10 when the plate 30 is attached to the lower part of the cavity 16. As shown in more detail in FIG. 4, each of the discharge ports 31 is configured by attaching a rubber hole piece 32 to a through hole 30 a formed in the plate 30.
- the hole piece 32 has a ring shape, and a groove 32 a is formed on the entire circumference of the ring. Have been.
- the groove 32 a is a portion into which the opening edge of the through hole 30 a is inserted when the hole piece 32 is mounted on the plate 30. When attached to 0a, falling off is prevented.
- the contour of the inner peripheral edge of the hole piece 32 that is, the shape and the opening area of the discharge port 31 can be arbitrarily determined within a range not exceeding the size of the through hole 30a.
- a hole piece 32 having a long hole (discharge port 31) extending in an arc shape is used.
- a collection tank 40 for storing the liquid drained from the discharge port 31 is provided.
- a hose 41 is connected to the collection tank 40. The hose 41 is used to send the collected liquid collected by the recovery tank 40 to the circulating device R for the liquid.
- a substrate W such as a wafer to be plated is set in the plating apparatus 1. Specifically, the outer peripheral portion of the substrate W is placed on the placing portion 20 with the surface Ws to be plated of the substrate W facing downward (in the plating bath 10).
- a seed (not shown), which is a foil film made of gold (Au) for ensuring a good energization state, is formed on the outer peripheral portion of the plating target surface Ws, and the substrate W is placed on the mounting portion 20. Then, the seed of the substrate W comes into contact with the cathode 23.
- the seal packing 22 located inside the force sword 23 and the second annular projection 22 a come into contact with the outer peripheral portion of the target surface Ws. Thereafter, the substrate W is pressed against the mounting portion 20 with the holding member 27, and is fixed to the plating tank 10 in a state where the substrate W is securely brought into contact with the projection 22a of the seal packing 22 and the force sword 23. I do.
- the plating target surface Ws of the substrate W comes into contact with the plating solution filled in the plating tank 10.
- the outer peripheral portion of the plating target surface W s is in contact with the convex portion 22 a of the seal packing 22 over the entire circumference, and the substrate W and the mounting portion 20 are in contact with each other. There is no leakage of the plating solution from between.
- a current is applied between the power source 23 and the anode 26 in the plating tank 10 to perform a plating process on the surface Ws to be plated of the substrate W to form a plating film.
- the plating target surface is usually subjected to plating while supplying a plating solution into the plating tank 10.
- the flow of the plating solution during the plating process will be described.
- the plating solution is supplied into the plating tank 10 from a supply pipe 28 provided on the bottom surface 10 a of the plating tank 10.
- the plating bath 10 is filled with the plating solution, and the supply solution is supplied into the plating bath 10 from the supply pipe 28.
- the nails flow toward the target surface Ws. Then, when it rises to some extent, it flows so as to spread radially toward the outer peripheral side of the plating tank 10.
- the plating solution When the plating solution is supplied into the plating tank 10, an amount of the plating solution corresponding to the amount of the supplied solution flows out from the outlet 11 into the cavity 16.
- the plating solution flowing into the cavity 16 is temporarily stored in the cavity 16 and discharged from the discharge port 31 at the lower end of the cavity 16 to the recovery tank 40.
- the liquid stored in the recovery tank 40 is sent to the circulation device R via the hose 41 connected to the recovery tank 40.
- the plating solution sent to the circulation device R is filtered and adjusted for its components here to make it reusable, and then sent to the plating solution tank T for reuse.
- the shape and opening area of the outlet 31 of the cavity 16 can be changed and adjusted. It is possible, and changes and adjustments are easy. Then, by changing and adjusting the shape and the opening area of the discharge port 31, it is possible to adjust the flow of the plating solution at the outlet port 11, and to adjust the plating state in the outer peripheral area of the plating target surface.
- the diameter of the wafer to be plated was 200 mm, and the diameter of the surface to be plated was 190 mm.
- the plating solution was a copper sulfate solution (solution temperature was 20 ° C.), and the plating solution was continuously supplied from the supply pipe into the plating tank at 15 liters per minute.
- the theoretical current density on the target surface during energization was 1 AZ dm 2 .
- Comparative Example 1 This comparative example is different from the first embodiment in the condition of the shape of the outlet and / or the opening area. Specifically, a plate with a circular outlet was attached to the lower end of the cavity. The total opening area of the discharge port was the same as in the first embodiment. The other conditions are the same as those of the first embodiment, and the description is omitted. The experimental results are shown in Table 1 below.
- the standard deviation ( ⁇ ) representing the state of the film thickness variation is 0.2 m in the first embodiment in which the shape of the outlet is a long hole, and the standard deviation ( ⁇ ) is In the case of Comparative Example 1 ( ⁇ is 0.3 im).
- the wafer is copper-plated, but the object to be plated is not limited to the wafer, and can be widely applied to, for example, conductive metals such as stainless steel plates. Also, the metal to be plated is not limited to copper, and various metals such as nickel (Ni) and gold (Au) can be plated. Industrial applicability
- cup-type plating apparatus which concerns on this invention, when a metal, such as copper, is plated on the surface to be plated of a to-be-plated object, such as a wafer, plating of a more uniform film thickness can be performed. .
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
Claims
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP02807200A EP1574600A4 (en) | 2002-10-11 | 2002-10-11 | MUG METAL SEPARATION DEVICE |
| PCT/JP2002/010595 WO2004033763A1 (ja) | 2002-10-11 | 2002-10-11 | カップ式めっき装置 |
| US10/473,962 US7179359B2 (en) | 2002-10-11 | 2002-10-11 | Cup-shaped plating apparatus |
| JP2004542795A JPWO2004033763A1 (ja) | 2002-10-11 | 2002-10-11 | カップ式めっき装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2002/010595 WO2004033763A1 (ja) | 2002-10-11 | 2002-10-11 | カップ式めっき装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2004033763A1 true WO2004033763A1 (ja) | 2004-04-22 |
Family
ID=32089053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2002/010595 Ceased WO2004033763A1 (ja) | 2002-10-11 | 2002-10-11 | カップ式めっき装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7179359B2 (ja) |
| EP (1) | EP1574600A4 (ja) |
| JP (1) | JPWO2004033763A1 (ja) |
| WO (1) | WO2004033763A1 (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7776741B2 (en) | 2008-08-18 | 2010-08-17 | Novellus Systems, Inc. | Process for through silicon via filing |
| US9109295B2 (en) * | 2009-10-12 | 2015-08-18 | Novellus Systems, Inc. | Electrolyte concentration control system for high rate electroplating |
| US10472730B2 (en) | 2009-10-12 | 2019-11-12 | Novellus Systems, Inc. | Electrolyte concentration control system for high rate electroplating |
| US10692735B2 (en) | 2017-07-28 | 2020-06-23 | Lam Research Corporation | Electro-oxidative metal removal in through mask interconnect fabrication |
| US11427924B1 (en) * | 2021-04-16 | 2022-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for electro-chemical plating |
| TWI838020B (zh) * | 2022-12-19 | 2024-04-01 | 日商荏原製作所股份有限公司 | 鍍覆裝置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0456799A (ja) * | 1990-06-22 | 1992-02-24 | Kawasaki Steel Corp | 連続電気めっき装置におけるめっき液循環装置 |
| JP2000345386A (ja) * | 1999-05-31 | 2000-12-12 | Shimada Phys & Chem Ind Co Ltd | メッキ処理装置 |
| JP2002173794A (ja) | 2000-12-05 | 2002-06-21 | Electroplating Eng Of Japan Co | カップ式めっき装置 |
| JP2002322589A (ja) * | 2002-06-25 | 2002-11-08 | Electroplating Eng Of Japan Co | めっき方法及びめっき装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5100517A (en) * | 1991-04-08 | 1992-03-31 | The Goodyear Tire & Rubber Company | Process for applying a copper layer to steel wire |
| US5391285A (en) * | 1994-02-25 | 1995-02-21 | Motorola, Inc. | Adjustable plating cell for uniform bump plating of semiconductor wafers |
| US6179983B1 (en) * | 1997-11-13 | 2001-01-30 | Novellus Systems, Inc. | Method and apparatus for treating surface including virtual anode |
| US5997712A (en) * | 1998-03-30 | 1999-12-07 | Cutek Research, Inc. | Copper replenishment technique for precision copper plating system |
| TW497143B (en) * | 1999-07-08 | 2002-08-01 | Ebara Corp | Plating device, plating method and equipment for plating process |
| JP2002080995A (ja) | 2000-09-08 | 2002-03-22 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2002129384A (ja) | 2000-10-25 | 2002-05-09 | Applied Materials Inc | めっき装置 |
| JP2002129385A (ja) | 2000-10-25 | 2002-05-09 | Applied Materials Inc | めっき方法 |
-
2002
- 2002-10-11 JP JP2004542795A patent/JPWO2004033763A1/ja active Pending
- 2002-10-11 EP EP02807200A patent/EP1574600A4/en not_active Withdrawn
- 2002-10-11 WO PCT/JP2002/010595 patent/WO2004033763A1/ja not_active Ceased
- 2002-10-11 US US10/473,962 patent/US7179359B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0456799A (ja) * | 1990-06-22 | 1992-02-24 | Kawasaki Steel Corp | 連続電気めっき装置におけるめっき液循環装置 |
| JP2000345386A (ja) * | 1999-05-31 | 2000-12-12 | Shimada Phys & Chem Ind Co Ltd | メッキ処理装置 |
| JP2002173794A (ja) | 2000-12-05 | 2002-06-21 | Electroplating Eng Of Japan Co | カップ式めっき装置 |
| JP2002322589A (ja) * | 2002-06-25 | 2002-11-08 | Electroplating Eng Of Japan Co | めっき方法及びめっき装置 |
Non-Patent Citations (1)
| Title |
|---|
| See also references of EP1574600A4 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1574600A1 (en) | 2005-09-14 |
| US7179359B2 (en) | 2007-02-20 |
| JPWO2004033763A1 (ja) | 2006-02-09 |
| EP1574600A4 (en) | 2006-11-15 |
| US20040154917A1 (en) | 2004-08-12 |
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