WO2004106943A1 - Systeme accelerometrique - Google Patents

Systeme accelerometrique Download PDF

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Publication number
WO2004106943A1
WO2004106943A1 PCT/IB2003/002040 IB0302040W WO2004106943A1 WO 2004106943 A1 WO2004106943 A1 WO 2004106943A1 IB 0302040 W IB0302040 W IB 0302040W WO 2004106943 A1 WO2004106943 A1 WO 2004106943A1
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WO
WIPO (PCT)
Prior art keywords
chip
sensor
accelerometer system
integrated
sensors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2003/002040
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English (en)
Inventor
Jürg Schwizer
Henry Baltes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eidgenoessische Technische Hochschule Zurich ETHZ
Original Assignee
Eidgenoessische Technische Hochschule Zurich ETHZ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eidgenoessische Technische Hochschule Zurich ETHZ filed Critical Eidgenoessische Technische Hochschule Zurich ETHZ
Priority to AU2003232974A priority Critical patent/AU2003232974A1/en
Priority to PCT/IB2003/002040 priority patent/WO2004106943A1/fr
Publication of WO2004106943A1 publication Critical patent/WO2004106943A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges

Definitions

  • the present invention relates to a semiconductor accelerometer, i.e. an acceleration detecting device using semiconductor technology, particularly suitable for low-cost applications and/or applications requiring compactness of such a device.
  • Common acceleration devices use displacement of a proof mass, also named sensing, inertial, or seismic mass, in a cavity relative to a support for determining the acceleration.
  • the displacement can then be measured or sensed by e.g. capacitive sensors or by the force acting on any support elements of the proof mass.
  • Some acceleration sensors use integrated piezoresistive sensor elements or capacitive reading of displacements are commonly used.
  • the circuitry might be directly integrated on the proof mass, as shown by Yamamoto et al. in US patent 5460 044, dated 24 Oct. 1995.
  • the separation of the proof mass from the rest of the sensor unit is usually done by etching. If this etching process is not compatible with the etching process used for circuitry production, circuitry and proof mass have to be produced on separate components and assembled during packaging, as shown by Dunn et al. in US patent 5 164 328, dated 17 Nov. 1992.
  • the proof mass structure is integrated on the same chip as the electrical circuitry, it has to be protected from environment.
  • the forming of protecting caps results in additional production steps and thus increases the cost of the accel- erometer device.
  • wire bonding or flip-chip methods are used as disclosed by J. A. Plaza et al. in "Piezoresistive Accelerometers for MCM Package," Journal of Miroelectro- mechanical Systems, vol. 11, 6, pp. 794 - 801 , 2002 and by Nissan et al. in US patent 5 659 196, dated 19 Aug.1997.
  • Flip-chip bonding might also be used for connecting the different parts of the cavity and/ or proof mass. This approach is shown by Zimmermann in DE pat- ent 196 36 543, dated 13 March 1997.
  • Solder balls of flip-chip processes or plated metal structures on top of a semiconductor die are also used as proof mass, as disclosed by Kim in US patent 5 905 044, dated 18 May 1999. As such a metal mass is limited in size, cavities under the ball pad are used to increase the sensitivity. This has also to be done with additional etching processes.
  • the acceleration forces are measured near the pad with piezoresistive sensor structures. A plurality of sensors can be used to also determine the acceleration direction, as shown by Miyazaki in US patent 5 723 792, dated 7 Sep. 1995. It is thus apparent that a variety of acceleration measurement devices and structures are known, serving different needs and providing advantages depending on their particular environment.
  • Shinogi et al. US patent 6 158283 discloses an acceleration sensor in form of a cantilever whose free end reacts on acceleration/deceleration forces and whose evaluation circuits are partly located on or in the cantilever. A seismic mass or "dead weight" is attached to the free end of the cantilever. Here again, a separate proof mass is provided which increases total weight and size of the accelerometer.
  • local stress fields around mechanical contacts are being investigated and sensor structures developed for measuring forces occurring in wire bond applications.
  • ultrasound stresses and bond forces during the bonding process are being measured, as described by Mayer et al. in EP 1 204 143, dated 26 Oct. 2001 , and EP 2 002 445, dated 1 Feb 2002.
  • the present invention now creates a novel approach for establishing the necessary proof mass in an accelerometer.
  • the size of the accelerometer device can be kept to am minimum.
  • the support of the proof mass chip results from the packaging process. This is preferably a flip-chip packaging process which is highly suitable for mass production. The elimination of the etching steps commonly needed for proof mass formation further lowers production cost. Forces between chip and substrate resulting from temperature changes are crossed out by symmetry. This may be done by weighted summation of the forces that act on the individual contacts as explained below.
  • Fig. 1 is a cross section of an acceleration sensor chip, i.e. a "proof mass chip” mounted on a substrate by flip-chip bonding;
  • Fig. 2 is a perspective view of a partial proof mass chip showing a solder ball and integrated stress sensor elements on the chip;
  • Fig. 3 shows a top view of a proof mass chip with sensor structures
  • Fig. 4 shows a close-up cross-section of a proof mass chip with a solder ball and associated sensor elements in detail
  • Fig. 5 is a top view of piezoresistive sensor elements surrounding a solder ball; these sensor elements may form a Wheatstone bridge;
  • Fig. 6 is a top view of an alternative arrangement of sensor elements
  • Fig. 7 shows an example for a possible measuring principle
  • Fig. 8 is a schematic showing a possible layout of a circuitry for evaluating the signals of an array of sensor elements;
  • Fig. 9 is a cross section of an exemplary embodiment;
  • Fig. 10 shows another force sensor structure
  • Fig. 11 is an alternative embodiment using a ball bump as mechanical/electrical contact to the substrate.
  • Fig. 12 is an acceleration device with inceased sensitivity due to an additional mass bonded on the device.
  • desired electrical circuitry and sensor structures are formed on a silicon substrate or wafer.
  • the result is a chip or die comprising both sensor elements for the electrical and mechanical bonds of the chip and circuitry, connected to said sensors, for evaluating the signals derived from them.
  • the chip is packaged, using an essentially established packaging technology, whereby the chip is arranged such that forces are exerted on desired ones of the mechanical or eletrical connections or bonds when said package is accelerated, i.e. the result of the packaging step is the completed accelerometer.
  • Fig. 1 shows a cross section of an accelerometer according to the invention.
  • the "proof mass chip” 3 which comprises both the sensors 2 and the here not shown evaluation circuitry, is mounted on a substrate 1.
  • the substrate type is irrelevant; it may be a part of a housing, a laminated plastic structure, ceramic substrates, epoxy laminates, polyimide laminates, a silicon die, etc. Generally, the better the matching of the temperature coefficients of expansion between the substrate 1 and the chip 3, the lower the supplementary force of temperature expansion and the lesser the need for compensation of temperature effects.
  • To electrically connect the chip 3 to the substrate 1 which in this embodiment occurs by solder balls 4, at least one metal layer 5 on top of the substrate 1 is provided. This metal layer 5 can be covered with a solder mask 6 to improve the definition of the contact area to the solder.
  • the sensors 2 are integrated on the chip 3 close to the solder balls 4.
  • CMOS complementary metal-oxide semiconductor processes
  • each sensor structure consists of a plurality of sensors each of which provides a sensor signal proportional to the force exerted by the solder ball 24 in a selected direction.
  • An x-force sensor 25 produces a signal corresponding to forces occurring in x-direction.
  • An y-force sensor 26 and a z-force sensor 27 produce signals corresponding to the respective forces. All sensor structures 25, 26, and 27 are integrated on the silicon chip 21 , surrounding the solder ball 24 which here serves as both electrical and mechanical contact to the substrate (not shown in Fig. 2).
  • Fig. 3 shows an example of four sensors 31 integrated on a chip 32, but any other arrangement and number of sensors may be used.
  • Each sensor is placed around a solder ball 33 that here also serves as electrical and me- chanical connection.
  • the rest 34 of the chip area is occupied by electrical circuitry used for processing the sensor signals. This may include one or more amplification stages, multiplexing circuitry, analog-to-digital conversion circuitry, etc. Even a microprocessor and a memory may be integrated on such a chip.
  • the derived signals being indicative of the measured acceleration, are routed to the external via the solder balls 33 either as analog signals or digitized and thereafter transmitted with an appropriate serial or parallel interface.
  • Fig. 4 shows a close-up of a cross section of such a sensor and its solder ball 44.
  • One or more p + -doped drain-/source implantations or diffusions 41 are used as stress sensing elements. Each diffusion 41 is electrically isolated from the chip's substrate 42 by an n-doped well 43.
  • the sensor elements are covered with a passivation layer 45.
  • the electrical connections 46 on the chip are done with metal layers of the CMOS process.
  • the passivation layer 45 is opened over the pad metallization 47 which serves as base for the under- bump metallization 48 and solder ball 44.
  • CMOS / BiCMOS / SOI-CMOS processes may offer additional possibilities to integrate stress sensing elements. This includes, for example, stress sensitive transistors and/or piezoelectric or piezoresistive structures.
  • Fig. 5 shows a first example of a geometry or layout for the elements of a sen- sor.
  • Each of the uniaxial force sensor elements consists of four piezoresistive serpentine-shaped resistors, arranged in a rectangle.
  • the piezoresistors 52, 53, 54, and 55 are connected in such a way that only forces in x-direction are sensed, provided the (mechanical) contact is at least approximately circular.
  • the piezoresistors 56, 57, 58, and 59 of the y-force sensor are identical to the y-force sensor except that they are ro- tated 90 degrees.
  • the piezoresistors 50, 51 , 50a, and 51a, forming the z-force sensor are placed on the diagonal axes.
  • the piezoresistive sensor elements of Fig. 5 are connected in a full Wheat- stone bridge configuration as shown in Fig. 8. This arrangement of the sensor elements minimizes temperature sensitivity and geometric offset of the sensors.
  • Fig. 6 gives an example of a sensor based on slanting n + -doped structures.
  • the piezoresistors 60, 61 , 62, and 63 measure the x-force.
  • the piezoresistors 64, 65, 66, and 67 measure the y-force.
  • the z-force piezoresistors 68, 69, 68a, and 69a are used for the z-force measurement.
  • Z-force piezoresistors under the contact zone will increase the sensitivity. However, placement sensitivity and temperature sensitivity will also increase and the arrangement shown may restrict the pad design.
  • Accelerometers active in only two axes or just one axis can be designed without any major change in the general layout by omitting the piezoresistors for the unused axes.
  • packaging is based on commercially available processes. Packaging is the subsequent step and consists in brief of the following.
  • an under-bump metallization 48 separates the pad metallization layer 47 and the solder ball 44.
  • a nickel layer of 5 ⁇ m and a 50nm gold layer are stacked.
  • Solder paste is then placed on this under-bump metallization with a screen printing process.
  • a subsequent heat treatment forms solder balls 44 on the pad.
  • Other contact forming processes are also applicable as the sensor usually does not restrict the pad design.
  • the sensitivity of the sensors is defined by the solder ball footprint. It is therefore important to control the solder ball footprint with a well defined under-bump metallization size and form in order to get equal sensitivities for all sensors.
  • the sensitivity and dynamic range of the ac- celeratometer system can be controlled by varying the amount and the size of the interconnection joints.
  • each individual chip houses the electrical circuitry, the sensors with their elements, and the electrical contacts. And each individual chip is, when attached to a base, so-to-speak a self-contained, acceleration-sensing proof mass.
  • Fig. 7 explains how the acceleration signals are extracted from the signals of the individual sensors at the solder balls and how they are balanced.
  • acceleration forces and forces that result from other effects can be separated.
  • Temperature-induced, i.e. thermally caused, forces will be point symmetrical as indicated at 77 in a kind of force diagram and therefore crossed out. Homogeneous bending of the chip 74 or the substrate (not displayed in this figure) results also in a force distribution on the solder balls that can be crossed out.
  • the acceleration in x-direction is given by the sum
  • the calibration values ⁇ and ⁇ y are equal because both the x-force sensor and the y-force sensor are identical in the present embodiment.
  • the acceleration torque of the z-axis, as indicated in force diagram 78 is calculated correspondingly.
  • the sensor position (r x ,r y ) is given relative to the center of the chip and the mass is replaced by the moment of inertia l dl ⁇ of the chip.
  • Fig. 8 shows the analog circuitry that is used for switching and amplifying the sensor signals.
  • the sensors 80, 81, 82, and 83 of a sensor structure are connected in a full Wheatstone bridge configuration.
  • Table 1 below assigns the sensors of Figs. 5 and 6 to the wiring scheme in Fig. 8. Due to the particular arrangement of the sensors, as shown in the figures and explained above, forces along the different axes or directions can be separated.
  • Table 1 Electrical connection table of the sensors to form a uniaxial force sensor
  • each on-chip integrated sensor structure is connected to a bus system 85 with analog switches 84 and 84a.
  • the sensors are powered by a constant voltage source 86.
  • Sensor signals on the bus system 85 are amplified by a differential amplifier 87.
  • High frequency noise can be removed by a low-pass filter 87a.
  • An offset correction circuitry 88 is used for offset reduction.
  • the resulting sensor signal 89 is converted from analog to digital, preferably on-chip.
  • control and signal lines of the electrical circuitry are connected with the same solder balls as the ones used for the measurement. In other words, there is no additional wiring necessary that could mechanically distort the measurement.
  • Fig. 9 is a cross section of another exemplary embodiment. Though it looks somewhat similar to Fig. 7, it implements a different measuring approach. This approach shall be explained in the following. Whereas the measurement principle shown and explained with regard to Fig. 7 uses the acceleration and deceleration forces occurring parallel to the movement of the proof mass chip, the principle of the Fig. 9 embodiment essentially exploits the "tilting forces" occurring because the chip's center of gravity usually has a certain orthogonal distance from the measurement plane.
  • the sensor chip 93 is connected by four solder balls, of which only two, 92 and 92a, are visible, to a substrate or base 99.
  • the acceleration a is the acceleration at the center of gravity 91.
  • the "pad pitch" p pad is the distance between the solder balls 92 and 92a in the x- direction.
  • the chip has the dimensions width w die and height h die which can thus be selected to tailor the sensitivity of the accelerometer system to the application needs. Obviously, the same applies to the forces in y-direction.
  • FIG. 10 An appropriate design of a force sensor structure for the embodiment of Fig. 9 is shown in Fig. 10.
  • a serpentine-shaped piezoresistor 36 is integrated under the pad 38 for the solder ball.
  • Other sensor shapes may also be adaptable.
  • the production of the sensor structure is the same as described for the previous embodiment.
  • four of such sensors structures under different solder pads are connected in a full Wheatstone bridge configuration as also described above.
  • the four pads are preferably placed in a square matrix as shown in Fig. 3.
  • a force acting in x- or y-direction will increase the resistance of two of the sensor structures, whereas it will decrease the resistance for the other two sensor structures.
  • These re- sistor changes are converted by a Wheatstone bridge into a sensor voltage that is proportional to the acceleration.
  • the normal force i.e. the force perpendicular to the x- and y-directions, causes a stress field ⁇ a in the silicon.
  • This stress field is localized under the pad 38 in Fig. 10. Therefore, sensor structures placed beneath the contact pad 38 can be used to compensate sensor drifts in first order.
  • Sensor elements 35 and 37 are joined and form one resistor of a second Wheatstone bridge which is used as reference for compensating offset drifts.
  • the signal conditioning is comparable to the embodiment shown in Fig. 7, except that less sensors are needed which in turn results in a simpler circuitry.
  • solder balls are used as mechanical and electrical contact between the acceleration-sensing proof mass chip and the substrate or base. This however is not the only embodiment possible. Any other suitable contacts can be used which allow local electrical and/or mechanical contact between substrate and chip.
  • Fig. 11 shows such an alternative contact embodiment.
  • the sensor structure with the electrical connection 100, passivation layer 101, n-doped well 102, and drain/source implantation/diffusion 103 is equivalent to the embodiment shown in Fig. 4.
  • a gold ball 104 is bonded on the aluminum pad 105.
  • This gold ball 104 is the first bond of a wire bond interconnection.
  • This kind of mechanical/electrical connection is widely used for inter- connecting a semiconductor chip with a substrate. Wire bonder suppliers offer this special mode which only bonds the first connection and then tears the wire off.
  • the remaining gold ball 104 can be used as flip-chip interconnection bond.
  • additional diffusion barrier layers may be added between the aluminum pad 105 and the gold ball 104. After bonding all gold balls, the chip is flipped and bonded on the substrate. This can be done with ultrasound vibration and/or heat and/or by applying sufficient pressure.
  • Fig. 12 exhibits an exemplary possibility to further increase the sensitivity of a acceleration system according to the invention.
  • an additional mass 108 is glued or otherwise affixed on top of the chip 106 which is bonded to the substrate 107 as described above.
  • the additional mass 108 is bonded on top of the chip 106.
  • the bond 109 between the two bodies can be established by anodic bonding, e.g. prior to ball placement and flip-chip bonding, or by using epoxy adhesives.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un accéléromètre mettant en oeuvre des capteurs intégrés (2) qui mesurent les forces agissant sur chaque jonction d'interconnexion (4) entre une puce semi-conductrice (3) et une base (1), la puce entière (3) faisant office de masse d'épreuve. Cette puce (3) peut être connectée par bossage à la base (1). Les capteurs (2) sont de préférence intégrés sur la puce (3), entourant/supportant chaque jonction d'interconnexion (4), et fournissent des signaux proportionnels aux forces agissant sur les jonctions d'interconnexion (4). Les forces d'accélération dans l'intégralité des trois dimensions peuvent être distinctes. Les jonctions d'interconnexion (4) servent également de connexion électrique pour la lecture des signaux des capteurs. L'élimination de tout processus de gravure du substrat pour former la masse d'épreuve permet d'obtenir un accéléromètre particulièrement bien adapté à des applications compactes peu coûteuses.
PCT/IB2003/002040 1999-10-15 2003-05-27 Systeme accelerometrique Ceased WO2004106943A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2003232974A AU2003232974A1 (en) 1999-10-15 2003-05-27 Accelerometer system
PCT/IB2003/002040 WO2004106943A1 (fr) 2003-05-27 2003-05-27 Systeme accelerometrique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2003/002040 WO2004106943A1 (fr) 2003-05-27 2003-05-27 Systeme accelerometrique

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WO2004106943A1 true WO2004106943A1 (fr) 2004-12-09

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PCT/IB2003/002040 Ceased WO2004106943A1 (fr) 1999-10-15 2003-05-27 Systeme accelerometrique

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006114347A1 (fr) * 2005-04-28 2006-11-02 Robert Bosch Gmbh Capteur de pression micromecanique et procede de realisation correspondant
WO2006114346A1 (fr) * 2005-04-28 2006-11-02 Robert Bosch Gmbh Capteur de pression/force micromecanique et procede de fabrication correspondant

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430895A (en) * 1982-02-02 1984-02-14 Rockwell International Corporation Piezoresistive accelerometer
FR2689642A1 (fr) * 1992-04-03 1993-10-08 Commissariat Energie Atomique Capteur d'accélération du type capacitif omnidirectionnel dans un plan principal.
US5279162A (en) * 1988-09-02 1994-01-18 Honda Giken Kogyo Kabushiki Kaisha Semiconductor sensor
US5460044A (en) * 1992-12-25 1995-10-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor acceleration detecting apparatus
US5659196A (en) * 1995-11-08 1997-08-19 Mitsubishi Denki Kabushiki Kaisha Integrated circuit device for acceleration detection

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430895A (en) * 1982-02-02 1984-02-14 Rockwell International Corporation Piezoresistive accelerometer
US5279162A (en) * 1988-09-02 1994-01-18 Honda Giken Kogyo Kabushiki Kaisha Semiconductor sensor
FR2689642A1 (fr) * 1992-04-03 1993-10-08 Commissariat Energie Atomique Capteur d'accélération du type capacitif omnidirectionnel dans un plan principal.
US5460044A (en) * 1992-12-25 1995-10-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor acceleration detecting apparatus
US5659196A (en) * 1995-11-08 1997-08-19 Mitsubishi Denki Kabushiki Kaisha Integrated circuit device for acceleration detection

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SCHWIZER J ET AL: "ANALYSIS OF ULTRASONIC WIRE BONDING BY IN-SITU PIEZORESISTIVE MICROSENSORS", TRANSDUCERS '01 EUROSENSORS XV. 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS AND ACTUATORS. DIGEST OF TECHNICAL PAPERS. MUNICH, JUNE 10 - 14, 2001, INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS AND ACTUATORS. DIGEST OF TECHNICAL PAPERS, BER, ISBN: 3-540-42150-5, XP008002207 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006114347A1 (fr) * 2005-04-28 2006-11-02 Robert Bosch Gmbh Capteur de pression micromecanique et procede de realisation correspondant
WO2006114346A1 (fr) * 2005-04-28 2006-11-02 Robert Bosch Gmbh Capteur de pression/force micromecanique et procede de fabrication correspondant

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