WO2004114312A3 - Dispositifs de memoire vive magnetique transplantee (mram) formes sur des substrats thermosensibles au moyen du transfert laser et leur procede de fabrication - Google Patents

Dispositifs de memoire vive magnetique transplantee (mram) formes sur des substrats thermosensibles au moyen du transfert laser et leur procede de fabrication Download PDF

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Publication number
WO2004114312A3
WO2004114312A3 PCT/US2004/016271 US2004016271W WO2004114312A3 WO 2004114312 A3 WO2004114312 A3 WO 2004114312A3 US 2004016271 W US2004016271 W US 2004016271W WO 2004114312 A3 WO2004114312 A3 WO 2004114312A3
Authority
WO
WIPO (PCT)
Prior art keywords
memory device
low
temperature substrate
magnetic memory
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/016271
Other languages
English (en)
Other versions
WO2004114312A2 (fr
Inventor
Gupta Arunava
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to CN200480022966XA priority Critical patent/CN101263580B/zh
Priority to JP2006533353A priority patent/JP2007503129A/ja
Priority to EP04753147A priority patent/EP1631966A4/fr
Publication of WO2004114312A2 publication Critical patent/WO2004114312A2/fr
Anticipated expiration legal-status Critical
Publication of WO2004114312A3 publication Critical patent/WO2004114312A3/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

L'invention concerne un procédé de formation d'un dispositif de mémoire magnétique (et de sa structure résultante) sur un substrat basse température, qui consiste à former le dispositif mémoire sur un substrat transparent revêtu d'une couche de matière décomposable soumise à une chauffe rapide induisant une pression élevée prédéterminée, et à transférer ledit dispositif de mémoire sur le substrat basse température.
PCT/US2004/016271 2003-06-12 2004-05-24 Dispositifs de memoire vive magnetique transplantee (mram) formes sur des substrats thermosensibles au moyen du transfert laser et leur procede de fabrication Ceased WO2004114312A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200480022966XA CN101263580B (zh) 2003-06-12 2004-05-24 采用激光转移的在热敏衬底上的移植磁随机存取存储器(mram)及其制作方法
JP2006533353A JP2007503129A (ja) 2003-06-12 2004-05-24 レーザ移動を用いて感熱基板上に移植した磁気ランダム・アクセス・メモリ（ｍｒａｍ）デバイスおよびこれを製造する方法
EP04753147A EP1631966A4 (fr) 2003-06-12 2004-05-24 Dispositifs de memoire vive magnetique transplantee (mram) formes sur des substrats thermosensibles au moyen du transfert laser et leur procede de fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/459,517 2003-06-12
US10/459,517 US7494896B2 (en) 2003-06-12 2003-06-12 Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer

Publications (2)

Publication Number Publication Date
WO2004114312A2 WO2004114312A2 (fr) 2004-12-29
WO2004114312A3 true WO2004114312A3 (fr) 2006-10-19

Family

ID=33510827

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/016271 Ceased WO2004114312A2 (fr) 2003-06-12 2004-05-24 Dispositifs de memoire vive magnetique transplantee (mram) formes sur des substrats thermosensibles au moyen du transfert laser et leur procede de fabrication

Country Status (7)

Country Link
US (3) US7494896B2 (fr)
EP (1) EP1631966A4 (fr)
JP (1) JP2007503129A (fr)
KR (1) KR100850190B1 (fr)
CN (1) CN101263580B (fr)
TW (1) TWI322992B (fr)
WO (1) WO2004114312A2 (fr)

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US7494896B2 (en) * 2003-06-12 2009-02-24 International Business Machines Corporation Method of forming magnetic random access memory (MRAM) devices on thermally-sensitive substrates using laser transfer
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
EP2650907B1 (fr) 2004-06-04 2024-10-23 The Board Of Trustees Of The University Of Illinois Procedes et dispositifs permettant de fabriquer et d'assembler des elements a semiconducteur imprimables
US7211446B2 (en) * 2004-06-11 2007-05-01 International Business Machines Corporation Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory
JP2007080925A (ja) * 2005-09-12 2007-03-29 Ricoh Co Ltd 磁気抵抗素子、磁気センサ及びメモリ
US7932123B2 (en) * 2006-09-20 2011-04-26 The Board Of Trustees Of The University Of Illinois Release strategies for making transferable semiconductor structures, devices and device components
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US9289132B2 (en) 2008-10-07 2016-03-22 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US7969774B2 (en) 2009-03-10 2011-06-28 Micron Technology, Inc. Electronic devices formed of two or more substrates bonded together, electronic systems comprising electronic devices and methods of making electronic devices
KR101706915B1 (ko) 2009-05-12 2017-02-15 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 변형가능 및 반투과 디스플레이를 위한 초박형, 미세구조 무기발광다이오드의 인쇄 어셈블리
WO2011041727A1 (fr) 2009-10-01 2011-04-07 Mc10, Inc. Boîtiers protecteurs avec des circuits électroniques intégrés
CN102714150B (zh) 2009-12-07 2016-01-20 Ipg微系统有限公司 激光剥离系统及方法
US9669613B2 (en) 2010-12-07 2017-06-06 Ipg Photonics Corporation Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated
WO2011069242A1 (fr) * 2009-12-09 2011-06-16 Cooledge Lighting Inc. Appareil permettant le transfert de dés de semi-conducteurs et procédé de fabrication dudit appareil
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
EP2513953B1 (fr) 2009-12-16 2017-10-18 The Board of Trustees of the University of Illionis Électrophysiologie faisant intervenir des équipements électroniques conformes
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
US20110151588A1 (en) * 2009-12-17 2011-06-23 Cooledge Lighting, Inc. Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques
US8334152B2 (en) * 2009-12-18 2012-12-18 Cooledge Lighting, Inc. Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate
CN104224171B (zh) 2010-03-17 2017-06-09 伊利诺伊大学评议会 基于生物可吸收基质的可植入生物医学装置
US9275888B2 (en) 2010-07-15 2016-03-01 Soitec Temporary substrate, transfer method and production method
FR2962848B1 (fr) * 2010-07-15 2014-04-25 Soitec Silicon On Insulator Substrat temporaire, procede de transfert et procede de fabrication
WO2012158709A1 (fr) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Barrettes de del à gestion thermique assemblées par impression
WO2012166686A2 (fr) 2011-05-27 2012-12-06 Mc10, Inc. Appareil électronique, optique et/ou mécanique et systèmes et procédés pour le fabriquer
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
US9691873B2 (en) 2011-12-01 2017-06-27 The Board Of Trustees Of The University Of Illinois Transient devices designed to undergo programmable transformations
JP2015521303A (ja) 2012-03-30 2015-07-27 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシ 表面への形状適合可能な付属物装着可能電子デバイス
US20160020011A2 (en) * 2012-09-28 2016-01-21 Seagate Technology Llc Methods of forming magnetic materials and articles formed thereby
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
US9048410B2 (en) 2013-05-31 2015-06-02 Micron Technology, Inc. Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls
US9437756B2 (en) 2013-09-27 2016-09-06 Sunpower Corporation Metallization of solar cells using metal foils
US9378760B2 (en) * 2014-07-31 2016-06-28 Seagate Technology Llc Data reader with tuned microstructure
US10388858B2 (en) 2014-09-26 2019-08-20 Intel Corporation Fabrication of crystalline magnetic films for PSTTM applications
US10677647B2 (en) 2015-06-01 2020-06-09 The Board Of Trustees Of The University Of Illinois Miniaturized electronic systems with wireless power and near-field communication capabilities
EP3304130B1 (fr) 2015-06-01 2021-10-06 The Board of Trustees of the University of Illinois Approche alternative de détection d'uv
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
JP7161483B2 (ja) * 2017-09-27 2022-10-26 日本碍子株式会社 下地基板、機能素子および下地基板の製造方法
CN114447213B (zh) * 2022-01-28 2026-04-28 江苏多维科技有限公司 一种用于激光退火的磁电阻传感器层结构

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Also Published As

Publication number Publication date
US20080055790A1 (en) 2008-03-06
JP2007503129A (ja) 2007-02-15
US7674686B2 (en) 2010-03-09
CN101263580A (zh) 2008-09-10
CN101263580B (zh) 2011-08-24
TW200511310A (en) 2005-03-16
KR20060004982A (ko) 2006-01-16
EP1631966A2 (fr) 2006-03-08
TWI322992B (en) 2010-04-01
US20080044930A1 (en) 2008-02-21
EP1631966A4 (fr) 2010-09-08
US20040252559A1 (en) 2004-12-16
WO2004114312A2 (fr) 2004-12-29
US7888757B2 (en) 2011-02-15
KR100850190B1 (ko) 2008-08-05
US7494896B2 (en) 2009-02-24

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