WO2004114480A2 - Festkörperlasermedium - Google Patents
Festkörperlasermedium Download PDFInfo
- Publication number
- WO2004114480A2 WO2004114480A2 PCT/EP2004/003098 EP2004003098W WO2004114480A2 WO 2004114480 A2 WO2004114480 A2 WO 2004114480A2 EP 2004003098 W EP2004003098 W EP 2004003098W WO 2004114480 A2 WO2004114480 A2 WO 2004114480A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- solid body
- body according
- laser
- solid
- used area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
- H01S3/235—Regenerative amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
Definitions
- the invention relates to a solid.
- solid bodies in the form of crystals which consist of garnet (YAG), vanadate (YVO), fluoride (YLF), sapphire (Sa) and glass.
- Ions are introduced into these crystals, for example as doping, the concentration of these ions being higher than that of a gas laser, so that higher powers can be achieved with solid-state lasers.
- Suitable ions for doping are, for example, elements that are chemically similar to the crystal used. Therefore, many crystals used for solid-state lasers contain yttrium (Y), which can easily be replaced by rare earth ions.
- doping ions in a crystal these ions are usually in trivalent form.
- An essential feature in the selection of crystals for solid-state lasers is their thermal conductivity, since a significant proportion of the excitation energy is converted into heat in the crystal. An inhomogeneous temperature distribution in the crystal can lead to changes in the refractive index, the lens effects cause and can change the resonator properties of the solid-state laser sensitive.
- the thickness of the crystal must be large enough to absorb a sufficient proportion of the excitation energy.
- the minimum thickness required for such an operation depends on the degree of doping of the crystal. For doping in the order of 1.4 x 10 21 cm "3 , thicknesses of less than 100 ⁇ m can be achieved.
- an active zone is understood to mean, for example in the case of an optical application, an area in which optical absorption takes place for the respective wavelength range.
- an optical application in a non-active zone there is no absorption in the respective wavelength range.
- more than two domains can also be provided.
- One of the domains preferably forms a laser-active zone, while the other domain forms a passive, that is to say inactive, zone.
- the laser effect occurs in the laser-active zone, while the passive zone can serve, for example, as a holder for the laser-active zone.
- the passive zone can form a spacer for setting a predetermined distance between the laser-active zone and a pump source.
- FIG. 6 a fourth exemplary embodiment of a solid body according to the invention in the form of a high-power disk laser
- FIG. 7 in the same representation as FIG. 3, a fifth exemplary embodiment of a solid body according to the invention in the form of a Bragg reflector, FIG. 8 a highly schematic sectional view of an exemplary embodiment of a short pulse laser according to the invention and FIG. 9 a schematic sectional view of an exemplary embodiment of a regenerative amplifier according to the invention ,
- the solid body according to the invention can be pumped with a conventional laser diode 5 without additional adaptation optics and used as a laser.
- the beam of the laser diode 5, which is used to pump the laser-active domain 2 is divergent and the beam cross section is elliptical.
- the beam characteristic in the near field differs from the far field, with divergence angles of around 30 ° being common. Due to diffraction effects, the beam diverges most strongly in an area perpendicular to the PN junction of the diode. Further away from the PN junction, the far field, the beam field becomes elliptical again, but this time with its long axis perpendicular to the PN junction. At a distance of approx.
- the pump beam has an essentially circular cross section.
- the solid body according to the invention can be attached directly to the laser diode 5 or be arranged in the immediate vicinity of the laser diode 5, that is to say in an area in which the beam cross section of the laser diode 5 is approximately circular.
- the passive domain 1 faces the laser diode 5, while the laser-active domain 2 faces the laser diode 5.
- the distance between the laser diode 5 and the laser-active domain 2 is chosen so that the beam of the laser diode 5 when it enters the laser-active domain.
- ne 2 has an essentially circular beam cross section. Due to the extremely short absorption length of the laser-active domain, deviations in the beam cross-section from the desired circular beam cross-section along the laser-active domain 2 have no practical effects.
- Another advantage of the arrangement shown in FIG. 3 is that thermal stresses in the solid state caused by beam divergences of the laser diode 5 are reduced.
- the solid body according to the invention can thus be connected directly to the laser diode 5, which is used to pump the laser-active domain 2, instead of a window, which, as shown in FIG. 2, usually serves as dust protection in conventional lasers.
- the passive domain primarily serves as a mechanical support for the laser-active domain.
- the passive domain can serve as a spacer between the laser-active domain 2 and the laser diode 5, in order, for example, to maintain the distance between the laser diode 5 and the laser-active domain 2 that is required to achieve an essentially circular beam cross section of the pump beam in the laser-active domain 2.
- the laser-active domain 2 has a thickness of approximately 50 ⁇ m, a laser diode (not shown) being used for pumping.
- the laser-active domain 2 is doped with ytterbium and additionally with up to 10% thulium (Tm). By The combined doping with ytterbium (Yb) and thulium (Tm) enables excitation with a wavelength of 900-1000 nm, the laser beam having a wavelength of 2 ⁇ m.
- FIG. 5 shows a third exemplary embodiment of a solid body according to the invention, which has a first domain 10 which has a thickness of approximately 40 ⁇ m and consists of KYbW which is doped with 1 at% Nd.
- the domain 10 is arranged between two domains 12, 14, which consist of potassium yttrium olframate (KYW). Since the refractive index of KYW is lower than the refractive index of KYbW, domain 10 forms a waveguide.
- the solid body shown in FIG. 5 can be used, for example, in conjunction with a chip laser that emits at 1.4 ⁇ m.
- One of the domains 12, 14 is made particularly thin in order to reduce the thermal resistance.
- the absorption of the pump radiation is quasi-resonantly transmitted to the Nd.
- the resonator mirrors are transparent at 1.06 ⁇ m and highly reflective at 1.35 ⁇ m in the second laser transition.
- FIG. 6 shows a further exemplary embodiment of a solid body according to the invention, which forms a high-power disk laser in this exemplary embodiment.
- the solid has this
- Potassium lutetium yttrium olframate (K u ⁇ . X W) exists and serves as a mechanical support for the first domain 22.
- the second domain 24 serves as a medium for index matching (index matching medium) reduce losses caused by ASE (amplified spontaneous emission).
- the first domain 22 On its side facing away from the second domain 24, the first domain 22 is provided with a plurality of mirrors 26 arranged in layers one above the other, these mirrors 26 alternatingly consisting of KYW and KYbW and the relatively large difference in the refractive index of KYW and KYbW being exploited , If the reflection of the mirrors 26 is not sufficient, a dielectric mirror 28 can be provided on the side of the mirror 26 facing away from the first domain 22. Since only a part of the required total reflection has to be generated by the mirror 28, the mirror 28 can be made particularly thin, which significantly reduces its thermal resistance. In this way, a high-performance disk laser is implemented that is simple and inexpensive to manufacture.
- FIG. 7 shows a further exemplary embodiment of a solid body according to the invention which has a first domain 32 which consists of KYbW.
- the solid body according to the invention can be used in a variety of ways.
- the solid body according to the invention can be used particularly advantageously for laser applications, for example wise for chip lasers without adjustment optics, ultra-thin disk lasers for single-frequency operation with particularly high power, planar waveguide lasers and high-power lasers without losses due to ASE.
- the teaching according to the invention enables the implementation of thin disk lasers, since, due to the particularly short absorption length, for example of KYbW, a single pass of the pump beam through the laser-active domain is sufficient. This eliminates the complex arrangements that are required in conventional disk lasers in order to generate a multiple pass of the pump beam through the laser medium.
- mirrors can be provided between which the laser radiation oscillates during operation of the short pulse laser 36.
- the mirrors can be connected directly to the end faces of the solid, for example by vapor deposition.
- FIG. 9 shows an embodiment of a device according to the invention for amplifying laser radiation, which is designed as a regenerative amplifier 46 in this embodiment.
- the regenerative amplifier 46 has a solid body 48 as the gain medium, which can be constructed, for example, like the solid body shown in FIG. 8.
- the regenerative amplifier 46 has a laser resonator, between the resonator mirrors 50, 52 of which the solid body 48 is arranged as the gain medium.
- the regenerative amplifier 46 also has an optical switch 54 and a polarizing beam splitter 56, the optical switch 54 serving to amplify one in the laser resonator
- An optical isolator 62 is provided to separate a laser beam 58 to be amplified from the amplified laser beam 60.
- the solid body according to the invention enables simple and inexpensive implementation of a a regenerative amplifier
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
Claims
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP04722808A EP1639680A2 (de) | 2003-06-20 | 2004-03-24 | Festkörper |
| JP2006515748A JP2007507084A (ja) | 2003-06-20 | 2004-03-24 | 固体レーザー媒質 |
| US11/311,636 US20060233209A1 (en) | 2003-06-20 | 2005-12-20 | Solid body |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10328115 | 2003-06-20 | ||
| DE10328115.0 | 2003-06-20 | ||
| DE10355216A DE10355216A1 (de) | 2003-06-20 | 2003-11-26 | Festkörper |
| DE10355216.2 | 2003-11-26 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US11/311,636 Continuation US20060233209A1 (en) | 2003-06-20 | 2005-12-20 | Solid body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2004114480A2 true WO2004114480A2 (de) | 2004-12-29 |
| WO2004114480A3 WO2004114480A3 (de) | 2005-05-06 |
Family
ID=33542148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2004/003098 Ceased WO2004114480A2 (de) | 2003-06-20 | 2004-03-24 | Festkörperlasermedium |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20060233209A1 (de) |
| EP (1) | EP1639680A2 (de) |
| JP (1) | JP2007507084A (de) |
| WO (1) | WO2004114480A2 (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8149887B2 (en) * | 2007-07-27 | 2012-04-03 | Mitsubishi Electric Corporation | Planar waveguide laser device |
| WO2013019300A2 (en) * | 2011-05-11 | 2013-02-07 | Crystal Genesis, Llc | Laser design |
| US9711928B2 (en) * | 2012-06-22 | 2017-07-18 | Clemson University Research Foundation | Single crystals with internal doping with laser ions prepared by a hydrothermal method |
| US10156025B2 (en) | 2015-05-04 | 2018-12-18 | University Of South Carolina | Monolithic heterogeneous single crystals with multiple regimes for solid state laser applications |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3203902A (en) * | 1961-08-07 | 1965-08-31 | Bell Telephone Labor Inc | Rubidium-rare earth tungstate and molybdate optical maser materials |
| ES2187262B2 (es) * | 2001-01-31 | 2004-06-16 | Fundacio Urv Universitat Rovira I Virgili | Monocristal de wolframato doble de potasio e iterbio, opcionalmente dopado, procedimiento para su produccion y aplicaciones. |
-
2004
- 2004-03-24 WO PCT/EP2004/003098 patent/WO2004114480A2/de not_active Ceased
- 2004-03-24 EP EP04722808A patent/EP1639680A2/de not_active Withdrawn
- 2004-03-24 JP JP2006515748A patent/JP2007507084A/ja not_active Withdrawn
-
2005
- 2005-12-20 US US11/311,636 patent/US20060233209A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US20060233209A1 (en) | 2006-10-19 |
| WO2004114480A3 (de) | 2005-05-06 |
| JP2007507084A (ja) | 2007-03-22 |
| EP1639680A2 (de) | 2006-03-29 |
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