WO2006010289A3 - Verfahren zur vereinzelung von auf einem halbleiterwafer angeordneten elektronischen schaltkreiseinheiten (chips) - Google Patents

Verfahren zur vereinzelung von auf einem halbleiterwafer angeordneten elektronischen schaltkreiseinheiten (chips) Download PDF

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Publication number
WO2006010289A3
WO2006010289A3 PCT/CH2005/000451 CH2005000451W WO2006010289A3 WO 2006010289 A3 WO2006010289 A3 WO 2006010289A3 CH 2005000451 W CH2005000451 W CH 2005000451W WO 2006010289 A3 WO2006010289 A3 WO 2006010289A3
Authority
WO
WIPO (PCT)
Prior art keywords
circuit units
wafer
semiconductor wafer
groove
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CH2005/000451
Other languages
English (en)
French (fr)
Other versions
WO2006010289A2 (de
Inventor
Jean-Marie Buchilly
Akos Spiegel
Bernold Richerzhagen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Synova SA
Original Assignee
Synova SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Synova SA filed Critical Synova SA
Publication of WO2006010289A2 publication Critical patent/WO2006010289A2/de
Publication of WO2006010289A3 publication Critical patent/WO2006010289A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Bei der Vereinzelung elektronischen Schaltkreiseinheiten (Chips) (22) auf einem Halbleiterwafer (21) wird zuerst distanziert vom Halbleiterwaferrand eine Randfurche eingebracht und erst anschliessend wird der Wafer (7) auf die Dicke der Schaltkreiseinheiten abgeschliffen, wobei dann der Bereich zwischen Randfurche und Halbleiterwaferrand abfällt. Mit oder auch ohne eine vorgängige Waferrandbereichsabtrennung wird an der Rändern der Schaltkreiseinheiten bzw. zwischen benachbarten Schaltkreiseinheiten jeweils eine den gedünnten Wafer nicht durchschneidende Vereinzelungsfurche (13; 25) ausgehend von der die Schaltkreiseinheiten tragenden Oberfläche (9; 33) des Wafers (1; 7; 21) eingebracht, wobei die Furchenseitenwände (17) durch die Flüssigkeit des Flüssigkeitsstrahls (27) derart stark gekühlt werden, dass Mikrorisse weitgehend vermieden werden. Eine Vereinzelung der Schaltkreiseinheiten durch eine Beaufschlagung mit einer Biegebruchspannung vorgenommen.
PCT/CH2005/000451 2004-07-30 2005-07-29 Verfahren zur vereinzelung von auf einem halbleiterwafer angeordneten elektronischen schaltkreiseinheiten (chips) Ceased WO2006010289A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH12852004 2004-07-30
CH1285/04 2004-07-30

Publications (2)

Publication Number Publication Date
WO2006010289A2 WO2006010289A2 (de) 2006-02-02
WO2006010289A3 true WO2006010289A3 (de) 2006-06-08

Family

ID=35266795

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CH2005/000451 Ceased WO2006010289A2 (de) 2004-07-30 2005-07-29 Verfahren zur vereinzelung von auf einem halbleiterwafer angeordneten elektronischen schaltkreiseinheiten (chips)

Country Status (1)

Country Link
WO (1) WO2006010289A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015056303A1 (ja) 2013-10-15 2015-04-23 三菱電機株式会社 半導体素子の製造方法、ウエハマウント装置
US9260337B2 (en) 2014-01-09 2016-02-16 Corning Incorporated Methods and apparatus for free-shape cutting of flexible thin glass
US12159805B2 (en) * 2017-04-20 2024-12-03 Siltectra Gmbh Method for producing wafers with modification lines of defined orientation
GB2592905A (en) * 2020-01-31 2021-09-15 Smart Photonics Holding B V Processing a wafer of a semiconductor material
CN114985024A (zh) * 2022-05-19 2022-09-02 广州大学 一种自适应热流控芯片及其制造方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0762947A1 (de) * 1994-05-30 1997-03-19 Bernold Richerzhagen Vorrichtung zur materialbearbeitung mit einem laser
DE19830237A1 (de) * 1998-07-07 2000-01-13 Schott Spezialglas Gmbh Verfahren und Vorrichtung zum Schneiden eines Werkstückes aus sprödbrüchigem Werkstoff
JP2000173961A (ja) * 1998-12-01 2000-06-23 Sharp Corp 半導体装置の製造方法および製造装置
US6294439B1 (en) * 1997-07-23 2001-09-25 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
EP1293316A1 (de) * 2001-08-28 2003-03-19 Tokyo Seimitsu Co.,Ltd. Verfahren und Vorrichtung zum Zerteilen
US20030062126A1 (en) * 2001-10-03 2003-04-03 Scaggs Michael J. Method and apparatus for assisting laser material processing
WO2003028943A1 (en) * 2001-10-03 2003-04-10 Lambda Physik Application Center, L.L.C. Method and apparatus for fine liquid spray assisted laser material processing
JP2003173988A (ja) * 2001-12-04 2003-06-20 Furukawa Electric Co Ltd:The 半導体ウェハのダイシング方法
JP2004111606A (ja) * 2002-09-18 2004-04-08 Tokyo Seimitsu Co Ltd ウェーハの加工方法
US20040097084A1 (en) * 2002-03-14 2004-05-20 Kazuya Fukuda Method for grinding rear surface of semiconductor wafer

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0762947A1 (de) * 1994-05-30 1997-03-19 Bernold Richerzhagen Vorrichtung zur materialbearbeitung mit einem laser
US6294439B1 (en) * 1997-07-23 2001-09-25 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
DE19830237A1 (de) * 1998-07-07 2000-01-13 Schott Spezialglas Gmbh Verfahren und Vorrichtung zum Schneiden eines Werkstückes aus sprödbrüchigem Werkstoff
JP2000173961A (ja) * 1998-12-01 2000-06-23 Sharp Corp 半導体装置の製造方法および製造装置
EP1293316A1 (de) * 2001-08-28 2003-03-19 Tokyo Seimitsu Co.,Ltd. Verfahren und Vorrichtung zum Zerteilen
US20030062126A1 (en) * 2001-10-03 2003-04-03 Scaggs Michael J. Method and apparatus for assisting laser material processing
WO2003028943A1 (en) * 2001-10-03 2003-04-10 Lambda Physik Application Center, L.L.C. Method and apparatus for fine liquid spray assisted laser material processing
JP2003173988A (ja) * 2001-12-04 2003-06-20 Furukawa Electric Co Ltd:The 半導体ウェハのダイシング方法
US20040097084A1 (en) * 2002-03-14 2004-05-20 Kazuya Fukuda Method for grinding rear surface of semiconductor wafer
JP2004111606A (ja) * 2002-09-18 2004-04-08 Tokyo Seimitsu Co Ltd ウェーハの加工方法

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
DUSHKINA, N. ET AL.: "Water Jet Guided Laser vs. Saw Dicing", PROC. OF SPIE, vol. 4977, 27 January 2003 (2003-01-27), SPIE-Int. Soc. Opt. Eng., USA, pages 75 - 85, XP008058585, ISSN: 0277-786X *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 09 13 October 2000 (2000-10-13) *
PATENT ABSTRACTS OF JAPAN vol. 2003, no. 10 8 October 2003 (2003-10-08) *
PATENT ABSTRACTS OF JAPAN vol. 2003, no. 12 5 December 2003 (2003-12-05) *
SIBAILLY, O., WAGNER, F., RICHERZHAGEN, B.: "Laser micro-maching in microelectronic industry by water jet guided laser", PROC. OF SPIE, vol. 5339, 28 January 2004 (2004-01-28), Bellingham, WA, pages 258 - 264, XP002365538 *

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Publication number Publication date
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