WO2006055476A3 - Procede d'integration de dispositifs optiques et de dispositifs electroniques sur un circuit integre - Google Patents

Procede d'integration de dispositifs optiques et de dispositifs electroniques sur un circuit integre Download PDF

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Publication number
WO2006055476A3
WO2006055476A3 PCT/US2005/041155 US2005041155W WO2006055476A3 WO 2006055476 A3 WO2006055476 A3 WO 2006055476A3 US 2005041155 W US2005041155 W US 2005041155W WO 2006055476 A3 WO2006055476 A3 WO 2006055476A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor layer
region
optical device
integrated circuit
electronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2005/041155
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English (en)
Other versions
WO2006055476A2 (fr
Inventor
Nigel G Cave
Omar Zia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Priority to JP2007541397A priority Critical patent/JP5107049B2/ja
Priority to EP05822578A priority patent/EP1854128A4/fr
Publication of WO2006055476A2 publication Critical patent/WO2006055476A2/fr
Anticipated expiration legal-status Critical
Publication of WO2006055476A3 publication Critical patent/WO2006055476A3/fr
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Optical Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un procédé permettant d'intégrer un dispositif optique et un dispositif électronique sur un substrat semi-conducteur, qui consiste à former des ouvertures (24, 26) à l'intérieur d'une couche semi-conducteur active (14) dans une première région (22) dudit substrat, cette première région correspondant à une partie dispositif électronique et une seconde région (20) à une partie dispositif optique. Une couche semi-conducteur (46) est formée par épitaxie recouvrant une couche semi-conducteur active (14) exposée dans la seconde région (20), la couche semi-conducteur (46) formée par épitaxie correspondant à une région du dispositif optique. Au moins une partie d'un dispositif électronique est formée sur la couche semi-conducteur active (14) dans la partie dispositif électronique (22) du substrat semi-conducteur. Le procédé consiste en outre à former des ouvertures (60, 62) dans la couche semi-conducteur (46) formée par épitaxie de la partie dispositif optique (20) du substrat semi-conducteur, lesdites ouvertures (60, 62) définissant une ou plusieurs caractéristiques d'un dispositif optique.
PCT/US2005/041155 2004-11-15 2005-11-14 Procede d'integration de dispositifs optiques et de dispositifs electroniques sur un circuit integre Ceased WO2006055476A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007541397A JP5107049B2 (ja) 2004-11-15 2005-11-14 光デバイスと電子デバイスとを集積回路に集積する方法
EP05822578A EP1854128A4 (fr) 2004-11-15 2005-11-14 Procede d'integration de dispositifs optiques et de dispositifs electroniques sur un circuit integre

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/989,940 2004-11-15
US10/989,940 US7109051B2 (en) 2004-11-15 2004-11-15 Method of integrating optical devices and electronic devices on an integrated circuit

Publications (2)

Publication Number Publication Date
WO2006055476A2 WO2006055476A2 (fr) 2006-05-26
WO2006055476A3 true WO2006055476A3 (fr) 2009-05-14

Family

ID=36386883

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/041155 Ceased WO2006055476A2 (fr) 2004-11-15 2005-11-14 Procede d'integration de dispositifs optiques et de dispositifs electroniques sur un circuit integre

Country Status (4)

Country Link
US (1) US7109051B2 (fr)
EP (1) EP1854128A4 (fr)
JP (1) JP5107049B2 (fr)
WO (1) WO2006055476A2 (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7080528B2 (en) * 2002-10-23 2006-07-25 Applied Materials, Inc. Method of forming a phosphorus doped optical core using a PECVD process
US8274715B2 (en) 2005-07-28 2012-09-25 Omnivision Technologies, Inc. Processing color and panchromatic pixels
US8139130B2 (en) 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity
US7574090B2 (en) * 2006-05-12 2009-08-11 Toshiba America Electronic Components, Inc. Semiconductor device using buried oxide layer as optical wave guides
US7916362B2 (en) 2006-05-22 2011-03-29 Eastman Kodak Company Image sensor with improved light sensitivity
US8031258B2 (en) 2006-10-04 2011-10-04 Omnivision Technologies, Inc. Providing multiple video signals from single sensor
US7785983B2 (en) 2007-03-07 2010-08-31 Freescale Semiconductor, Inc. Semiconductor device having tiles for dual-trench integration and method therefor
US8211732B2 (en) * 2008-09-11 2012-07-03 Omnivision Technologies, Inc. Image sensor with raised photosensitive elements
WO2012075350A2 (fr) * 2010-12-03 2012-06-07 Bae Systems Information And Electronic Systems Integration Inc. Procédé d'intégration d'un guide d'onde à fentes dans un processus cmos
US9183380B2 (en) 2011-10-11 2015-11-10 Citrix Systems, Inc. Secure execution of enterprise applications on mobile devices
US9280377B2 (en) 2013-03-29 2016-03-08 Citrix Systems, Inc. Application with multiple operation modes
US9599561B2 (en) 2011-10-13 2017-03-21 Affymetrix, Inc. Methods, systems and apparatuses for testing and calibrating fluorescent scanners
US8910239B2 (en) 2012-10-15 2014-12-09 Citrix Systems, Inc. Providing virtualized private network tunnels
WO2014062804A1 (fr) 2012-10-16 2014-04-24 Citrix Systems, Inc. Enveloppement d'application pour infrastructure de gestion d'application
US9971585B2 (en) 2012-10-16 2018-05-15 Citrix Systems, Inc. Wrapping unmanaged applications on a mobile device
US9595629B2 (en) * 2012-10-22 2017-03-14 Mellanox Technologies Silicon Photonics Inc. Enhancing planarization uniformity in optical devices
KR102007258B1 (ko) * 2012-11-21 2019-08-05 삼성전자주식회사 광전 집적회로 기판의 제조방법
US9989703B2 (en) * 2012-11-30 2018-06-05 International Business Machines Corporation Semiconductor structure and method for manufacturing a semiconductor structure
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
KR20140095678A (ko) * 2013-01-25 2014-08-04 삼성전자주식회사 광소자 및 전자소자를 포함하는 반도체 장치 및 그 제조 방법
US9387815B2 (en) 2013-02-28 2016-07-12 Kevin Goldstein Apparatus for collection of debris escaping around a vehicle tailgate
US9355223B2 (en) 2013-03-29 2016-05-31 Citrix Systems, Inc. Providing a managed browser
US9985850B2 (en) 2013-03-29 2018-05-29 Citrix Systems, Inc. Providing mobile device management functionalities
US10284627B2 (en) 2013-03-29 2019-05-07 Citrix Systems, Inc. Data management for an application with multiple operation modes
US9369449B2 (en) 2013-03-29 2016-06-14 Citrix Systems, Inc. Providing an enterprise application store
WO2015050167A1 (fr) * 2013-10-02 2015-04-09 技術研究組合光電子融合基盤技術研究所 Circuit intégré à semi-conducteurs et son procédé de fabrication
KR102590996B1 (ko) * 2018-10-17 2023-10-17 삼성전자주식회사 반도체 장치
US10884192B1 (en) * 2019-12-16 2021-01-05 Hewlett Packard Enterprise Development Lp Single-etch wide-bandwidth grating couplers with individually-tuned grating sections

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3569997A (en) * 1967-07-13 1971-03-09 Inventors And Investors Inc Photoelectric microcircuit components monolythically integrated with zone plate optics
US5612231A (en) * 1994-05-09 1997-03-18 Motorola Method of fabricating an electro-optic integrated circuit having light emitting diodes
US5674778A (en) * 1994-11-08 1997-10-07 Samsung Electronics Co., Ltd. Method of manufacturing an optoelectronic circuit including heterojunction bipolar transistor, laser and photodetector
US5885847A (en) * 1996-12-06 1999-03-23 Electronics And Telecommunications Research Institute Method of fabricating a compound semiconductor device
US5937274A (en) * 1995-01-31 1999-08-10 Hitachi, Ltd. Fabrication method for AlGaIn NPAsSb based devices
US5963788A (en) * 1995-09-06 1999-10-05 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
US6096591A (en) * 1997-06-30 2000-08-01 Advanced Micro Devices, Inc. Method of making an IGFET and a protected resistor with reduced processing steps
US6458614B1 (en) * 1998-03-26 2002-10-01 Murata Manufacturing Co., Opto-electronic integrated circuit
US6585424B2 (en) * 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US20040002177A1 (en) * 2002-06-26 2004-01-01 Liang-Hua Lin Photo sensor and method of forming the same
US6746948B2 (en) * 2001-09-17 2004-06-08 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor light-emitting device
US20050054131A1 (en) * 2003-07-23 2005-03-10 Applied Materials, Inc. Solution to thermal budget
US20050214989A1 (en) * 2004-03-29 2005-09-29 Honeywell International Inc. Silicon optoelectronic device
US6968110B2 (en) * 2003-04-21 2005-11-22 Sioptical, Inc. CMOS-compatible integration of silicon-based optical devices with electronic devices
US20050260802A1 (en) * 2004-04-07 2005-11-24 Andrea Pizzarulli SOI circuit having reduced crosstalk interference and a method for forming the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1107044A1 (fr) * 1999-11-30 2001-06-13 Hitachi Europe Limited Dispositif photonique
JP2002014242A (ja) 2000-06-28 2002-01-18 Oki Electric Ind Co Ltd 光導波路装置
WO2002014915A2 (fr) 2000-08-17 2002-02-21 Mcmaster University Production d'un guide d'ondes optiques de type silicium sur isolant par oxydation locale du silicium
US6594422B2 (en) 2001-05-02 2003-07-15 Motorola, Inc. Opto-coupling device structure and method therefor
US6654511B2 (en) 2001-05-17 2003-11-25 Sioptical, Inc. Optical modulator apparatus and associated method
US6608945B2 (en) 2001-05-17 2003-08-19 Optronx, Inc. Self-aligning modulator method and associated apparatus
US6839488B2 (en) 2001-09-10 2005-01-04 California Institute Of Technology Tunable resonant cavity based on the field effect in semiconductors
US6834152B2 (en) 2001-09-10 2004-12-21 California Institute Of Technology Strip loaded waveguide with low-index transition layer
GB0208255D0 (en) 2002-04-10 2002-05-22 Imec Inter Uni Micro Electr Photonic crystal based fiber-to-waveguide coupler for polarisation independent photonic integrated circuits

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3569997A (en) * 1967-07-13 1971-03-09 Inventors And Investors Inc Photoelectric microcircuit components monolythically integrated with zone plate optics
US5612231A (en) * 1994-05-09 1997-03-18 Motorola Method of fabricating an electro-optic integrated circuit having light emitting diodes
US5674778A (en) * 1994-11-08 1997-10-07 Samsung Electronics Co., Ltd. Method of manufacturing an optoelectronic circuit including heterojunction bipolar transistor, laser and photodetector
US5937274A (en) * 1995-01-31 1999-08-10 Hitachi, Ltd. Fabrication method for AlGaIn NPAsSb based devices
US5963788A (en) * 1995-09-06 1999-10-05 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
US5885847A (en) * 1996-12-06 1999-03-23 Electronics And Telecommunications Research Institute Method of fabricating a compound semiconductor device
US6096591A (en) * 1997-06-30 2000-08-01 Advanced Micro Devices, Inc. Method of making an IGFET and a protected resistor with reduced processing steps
US6458614B1 (en) * 1998-03-26 2002-10-01 Murata Manufacturing Co., Opto-electronic integrated circuit
US6585424B2 (en) * 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6746948B2 (en) * 2001-09-17 2004-06-08 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor light-emitting device
US20040002177A1 (en) * 2002-06-26 2004-01-01 Liang-Hua Lin Photo sensor and method of forming the same
US6968110B2 (en) * 2003-04-21 2005-11-22 Sioptical, Inc. CMOS-compatible integration of silicon-based optical devices with electronic devices
US20050054131A1 (en) * 2003-07-23 2005-03-10 Applied Materials, Inc. Solution to thermal budget
US20050214989A1 (en) * 2004-03-29 2005-09-29 Honeywell International Inc. Silicon optoelectronic device
US20050260802A1 (en) * 2004-04-07 2005-11-24 Andrea Pizzarulli SOI circuit having reduced crosstalk interference and a method for forming the same

Also Published As

Publication number Publication date
EP1854128A4 (fr) 2010-12-15
US7109051B2 (en) 2006-09-19
JP5107049B2 (ja) 2012-12-26
JP2008521216A (ja) 2008-06-19
US20060105479A1 (en) 2006-05-18
EP1854128A2 (fr) 2007-11-14
WO2006055476A2 (fr) 2006-05-26

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