WO2006060378A2 - Collimation de faisceau ionique formant un ruban de plage d'energie etendue faisant appel a un dipole a gradient variable - Google Patents

Collimation de faisceau ionique formant un ruban de plage d'energie etendue faisant appel a un dipole a gradient variable Download PDF

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Publication number
WO2006060378A2
WO2006060378A2 PCT/US2005/043103 US2005043103W WO2006060378A2 WO 2006060378 A2 WO2006060378 A2 WO 2006060378A2 US 2005043103 W US2005043103 W US 2005043103W WO 2006060378 A2 WO2006060378 A2 WO 2006060378A2
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Prior art keywords
coils
magnetic field
dipole
current
north
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WO2006060378A3 (fr
Inventor
Kenneth H. Purser
Norman L. Turner
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Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/055—Arrangements for energy or mass analysis magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/152—Magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Definitions

  • the disclosed methods and apparatus relate generally to the construction and use of magnetic focusing and correction elements for modifying the intensity distribution of ions within ribbon beams and more particularly to the introduction of magnetic-field modification coils that can be added to uniform and non-uniform field magnetic dipole deflectors for providing auxiliary variable magnetic field focusing and the reduction of the effects of space-charge forces.
  • the process of ion implantation is a critical manufacturing element used by the semiconductor industry. Implantation makes possible precise modification of the electrical properties of well-defined regions of a semiconducting work-piece by introducing selected impurity atoms, one by one, with a velocity such that they penetrate the surface layers and come to rest at a specified depth below the surface.
  • the characteristics that make implantation such a useful processing procedure are threefold: First, the concentration of the introduced charged dopant atoms can be accurately measured by straight-forward integration of the incoming electrical charge delivered to the work-piece; secondly, the patterning of dopant atoms can be precisely defined using photo-resist masks; finally, the fabrication of layered structures becomes possible by varying the ion energy.
  • the ion species used for silicon implantation include arsenic, phosphorus, germanium, boron and hydrogen.
  • the required implant energies range from below lkeV (kilo-electron volts) to several hundred keV.
  • Ion currents used range from microamperes to multi-milliamperes. Projecting to the future, demands are for greater productivity (elevated ion intensities); implantation at energies well below lkeV; improved precision of uniformity and ion-incidence angle-control at the wafer.
  • a first magnetic deflector directs wanted-mass ions through a mass-resolving aperture where unwanted species from the ion source are rejected. Downstream of this aperture the emitted fan-shaped beam, now comprising only wanted ions, is parallelized by a second magnet and transformed to the ribbon length needed for implanting a specific wafer diameter.
  • a deceleration system beyond the mass rejection aperture is included to reduce the energy of ions arriving at the wafer; the purpose being to allow the use of ion source extraction energies that are best suited for efficient source extraction and high transmission efficiency through the mass-resolving aperture.
  • the design of most existing commercial implanters includes magnetic deflectors that have predetermined ion focusing properties. These properties are established by the shapes of the coils and the magnet poles and generally can only be adjusted in a minor way, if at all, during implanter operation. Thus, when space-charge forces cause an expansion of the outer beam boundaries and consequent ion interception at the vacuum chamber or magnetic poles there is no procedure for introducing compensating compression forces.
  • the present patent disclosure describes a method and apparatus for superimposing variable magnetic focusing fields onto a uniform or indexed dipole deflecting field.
  • These additions thought of as perturbations to the main dipole field, are designed to introduce compression effects that provide approximate compensation for out-of-the-median-plane space charge expansion forces present in large-width ribbon beams. (Increases in ribbon length can be adjusted using other procedures). It will be recognized by those familiar with the art that, provided saturation does not occur, the magnetic fields necessary to produce supplemental focusing can be adjusted with little effect on the underlying dipole contribution allowing such perturbing fields to be increased or decreased at will and be turned on only when required for low-energy operation.
  • B(r) Bo(r/Ro) "n the optical transfer characteristics are identical to those of linear optical lenses.
  • Bo is the field at the central trajectory (at radius Ro)
  • r is the radius where the field is measured
  • n is the index of the field-gradient.
  • n 0 the deflecting magnetic field is uniform; when n is made negative, defocusing is introduced to trajectories traveling in the median plane and positive focusing is introduced to trajectories traveling in planes at right angles to the median plane (the y-direction); when n is positive focusing is reversed.
  • pole-face windings have been introduced to modify the basic dipole field index and add additional variable positive focusing in the y- direction.
  • the pole-face windings consist of a multiplicity of different area coils, (ampere-turn generators), that are mounted on or recessed into the pole surfaces.
  • the shape of an individual coil is defined by a single conductor oriented approximately along the ion-beam path with its ends being coupled to radial conductors that extend beyond the inside curved boundaries of the magnetic pole.
  • the radial conductors are connected to a suitable power source or connected in series or parallel with other coils. If necessary, individual coils may consist of several turns connected in series or parallel to increase ampere turns and thus the magnetic field gradient developed across the pole.
  • the key to introducing a supplementary field gradient is that the ensemble of subsidiary windings do not completely overlap each other but rather are wound as a stepped structure across the whole width of the magnet pole with the maximum coil overlap and thus the additional focusing magnetic field being a maximum on the inside of the curve and a minimum at the outside.
  • the spacing between windings establishes the local shape of the n-value gradient which those skilled in the art will recognize does not have to be identical to that of the underlying dipole index.
  • the uniform magnetostatic potential difference between the poles of the underlying dipole field is modified to become a distribution that varies as a function of the radius, producing a variable field distribution that enhances or subtracts from the in-built focusing of the underlying indexed-dipole collimation magnet.
  • FIG. 1 A Beam Coordinate System
  • Figure 2 Optical Schematic for a Simplified Ribbon Beam Implanter.
  • Figure 1 illustrates the beam coordinate system used in the following discussions.
  • the X-axis is always aligned with the front surface of the ribbon-beam, 120, and along the beam's long axis.
  • the Z-axis is tangential to the central trajectory of the ribbon beam, 110, and is always coincident with the central trajectory.
  • the orthogonal Cartesian Y-axis also lies in the surface, 120, and along the ribbon beam's narrow dimension.
  • Figure 2 presents a schematic of the preferred embodiment of a D.C. ribbon- beam implanter. It can be seen that there are two magnetic deflections along the beam path, 201 and 202.
  • the first magnetic deflection, 201 directs wanted-mass ions leaving the ion source, 220, through a mass-resolving aperture, 203. Unwanted species, 210, are rejected at the walls of the vacuum chamber or at the mass-resolving aperture, 203.
  • the selected ions, 204 are directed into the succeeding optical elements, 211 and 202, comprising a deceleration stage, 211, and a collimating magnet, 202.
  • the collimating magnet, 202 rejects high-energy neutral particles generated in the deceleration gap. It also provides the positive focusing needed for transforming the diverging ion beam passing through the mass selection slit, 203, to substantially parallel trajectories at the wafer implantation location, 206.
  • the wanted ions leaving the source pass through the opening between the jaws of the mass rejection slits, 203, to form a well-defined source of wanted ions from which almost all of the background particles, 210, have been removed.
  • the opening between the mass rejection slits, 203 is shaped to match the emittance of the ion beam; namely, a narrow cross section of the beam in the horizontal dispersive plane and a tall aperture at right angles in the non-dispersive direction.
  • the transmitted beam through this slit has the form of a uniform fan when viewed from above the x-z plane.
  • the fan of ions, 204 subtends an angle at the mass slit necessary to form the desired ribbon-beam length at the wafer plane, 206.
  • the trajectories of ions transmitted through the aperture 203 are substantially parallel to the x-z plane.
  • the ions drift for a short distance and then enter the deceleration region, 211.
  • ions are retarded to the energy required for implantation at the wafer, 206.
  • this deceleration stage, 211 An important function of this deceleration stage, 211, is to allow extraction of ions from the ion source at energies that are best suited for efficient ion- source extraction and high transmission efficiency through the mass resolving slit.
  • the ions leaving the deceleration region, 211 are directed into the collimator magnet, 202.
  • the positive optical strength of this magnetic deflector, 202 transforms the fan-shaped beam to a group of parallel trajectories required for implantation at the wafer, 206.
  • Figure 3 shows how focusing that can be introduced in a deflection magnet if the radial gap between the poles, 301, 302, is tapered radially. It can be seen that, because the pole surface represents an equipotential, in the z-direction (out of the page) the field acting on the trajectory 310, is less than that acting on the trajectory 311, causing the deflection radius of curvature to be greater for trajectory 310 than for 311. Thus, focusing in the x-direction is weakened, compared to that observed in a uniform field magnet; negative focusing has been introduced to the median plane trajectories. In the vertical direction it can be seen that, because of symmetry, the magnetic field lines, B, must cross the median plane, 304, normally.
  • an x-component of the deflecting field develops with this x- component increasing linearly with the y-distance away from the median plane, 304, changing sign at the median plane.
  • the effect is the production of a focusing field component in the direction along the dipole field lines that increases linearly with distance from the median plane. It can be seen that as positive focusing in the x-z plane is reduced, positive focusing in the y,z plane increases correspondingly.
  • Figure 4 shows an embodiment of the principles used to produce the field distribution needed for introducing variable focusing of a ribbon beam and the beam compression needed to minimize space-charge effects. It can be seen that a series of ever decreasing-area coils, 401, 402, 403, 404, etc, each enclosed by a conductor, or a plurality of conductors having the same shape, are superimposed layer by layer, so that the ampere turns generated by each layer add together in those regions where layers overlap to produce a perturbing field. Arrangements of such overlapping coils can be used to modify the base dipole-fleld index and add variable positive focusing in the y-direction.
  • the overlapping coils will have a maximum number sections overlapping on the inside of the ion beam deflection curve and a minimum number of sections along the outside of the curve.
  • the preferred embodiment involves the use of the above field generating technology but extends the concept in-as-much as the zero perturbing field regions are present along the ribbon-beam center-line, instead of at one edge of the ribbon beam as described above.
  • two supplementary field maxima are generated: One is on the inside and the other on the outside of the ribbon beam. It should be emphasized that the current direction through coils on the two sides are such that the sign of the supplementary magnetic field perturbations are positive on one side of the central trajectory and negative on the other. These two maxima can be controlled independently to introduce higher order deflections. Those skilled in the art will recognize that even higher order contributions can be introduced by individually varying the current passing through individual loops.
  • an increasing field perturbation is typically defined by a group of single conductors, 410, 411, 412, 413 etc. that are approximately oriented along the direction of the ion-beam.
  • the ends of each of these conductors are coupled to radial wires, 420, that extend across the width of the underlying magnetic pole to regions outside the curved boundaries of the magnetic pole.
  • the radial conductors are connected to a suitable power source or connected in series or parallel with other coils. In the preferred embodiment the conductor 410 would be close to the central trajectory.
  • Figure 5 shows schematically the method for generating supplemental magnetic fields that complements an underlying uniform dipole field.
  • the underlying field for a uniform magnetic field would have the value shown by the dotted line, 503, across the width of the pole.
  • the stacking of the coils is illustrated schematically as the layered pattern, 501, to produce the total field vectors across the pole, 511. It can also be seen that in its simplest embodiment the auxiliary fields introduce an additional component to the dipole field at the center of the pole, 506, having the differential increase, 510.
  • Figure 6 shows a second embodiment. It will be seen that the stacked field generators, described previously in figure 4, are divided into two section which are placed end-to-end with zero height close to the central trajectory.
  • the stacked generators, 601 have currents circulating in a direction that enhances the field, 603, developed by an underlying uniform-field dipole magnet.
  • the second set, 602 are shown schematically below the magnetic-field zero line to indicate that the currents through these coils circulate in the opposite direction to that of the coils, 601, producing a further supplementary field pattern that reduces the underlying dipole field.
  • Figure 7 shows the preferred embodiment as applied to wafer implantation, 703, 206.
  • Variable supplementary focusing fields are added to the fields generated by an underlying indexed or uniform dipole magnet, 202, 705.
  • the auxiliary magnetic-field generating coils are symmetrically disposed about the central beam trajectory, 702, and consist of a number of circumferential conductors mounted directly on the magnetic poles, 705, or recessed into shallow slots machined into these poles.
  • the conductors located in trenches, 710 are connected to the power sources, 701, 704 by suitable radial current feeds located along the sides of the magnet pole, as shown.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne une méthode et un appareil satisfaisant aux exigences croissantes d'amélioration de l'intensité d'implantation ionique qui provoquent un impact sur une plaquette semi-conductrice, lorsque celle-ci passe sous un faisceau ionique. La méthode et l'appareil de l'invention sont destinés à concevoir et à combiner ensemble de nouveaux éléments de transport optique ionique magnétique, à des fins d'implantation, pour combattre les effets perturbants des forces de charge spatiale induites par le faisceau ionique. La conception de ces nouveaux éléments optiques rend possible: (1) la focalisation d'un faisceau ionique formant ruban, lorsque le faisceau traverse des champs magnétiques uniformes ou non uniformes; (2) la réduction des pertes d'ions comprenant un faisceau formant ruban C.C. aux pôles magnétiques, lorsqu'un faisceau formant ruban est défléchi par un champ magnétique.
PCT/US2005/043103 2004-11-30 2005-11-30 Collimation de faisceau ionique formant un ruban de plage d'energie etendue faisant appel a un dipole a gradient variable Ceased WO2006060378A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63165504P 2004-11-30 2004-11-30
US60/631,655 2004-11-30

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WO2006060378A2 true WO2006060378A2 (fr) 2006-06-08
WO2006060378A3 WO2006060378A3 (fr) 2007-03-29

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Cited By (1)

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GB2446005B (en) * 2007-01-23 2012-03-21 Superion Ltd Apparatus and method relating to removal of selected particles from a charged particle beam

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US10183178B2 (en) * 2016-05-04 2019-01-22 Pyramid Technical Consultants Inc. Method and apparatus for controlled pencil beam therapy

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Also Published As

Publication number Publication date
US20060197029A1 (en) 2006-09-07
US20080302972A1 (en) 2008-12-11
US7414249B2 (en) 2008-08-19
US7829866B2 (en) 2010-11-09
WO2006060378A3 (fr) 2007-03-29

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