WO2006126027A2 - Module de capteur de rayonnement - Google Patents

Module de capteur de rayonnement Download PDF

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Publication number
WO2006126027A2
WO2006126027A2 PCT/GB2006/050123 GB2006050123W WO2006126027A2 WO 2006126027 A2 WO2006126027 A2 WO 2006126027A2 GB 2006050123 W GB2006050123 W GB 2006050123W WO 2006126027 A2 WO2006126027 A2 WO 2006126027A2
Authority
WO
WIPO (PCT)
Prior art keywords
module
substrate
circuitry
elements
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB2006/050123
Other languages
English (en)
Other versions
WO2006126027A3 (fr
Inventor
Alan Mathewson
John Carlton Jackson
Joseph O'keeffe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sensl Technologies Ltd
Original Assignee
Sensl Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sensl Technologies Ltd filed Critical Sensl Technologies Ltd
Publication of WO2006126027A2 publication Critical patent/WO2006126027A2/fr
Publication of WO2006126027A3 publication Critical patent/WO2006126027A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0204—Compact construction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

Definitions

  • the present invention relates to a light sensor module.
  • Avalanche Photodiode (APD) sensors are commonly used to detect extremely small amounts of light across the whole spectrum including UV, visible or IR radiation.
  • a photodiode is biased in avalanche mode, which results in a single incident photon of light producing a large number of electron hole pairs, i.e. a large current. This results in a low- light signal producing an amplified and readable electrical signal proportional to the input light signal, i.e. an analogue electrical output.
  • Typical amplification or gain for normal APDs is measured in the tens to hundreds.
  • Geiger-mode operation of photodiodes In Geiger mode, the diode junction is reverse-biased above the breakdown voltage for the diode. An incident light photon will cause an uncontrolled avalanche of electron-hole pairs, and hence a large spike of current. A quench circuit detects the surge in current caused by this breakdown and reduces the reverse bias voltage across the junction, which in turn stops the breakdown, and thereby stops the current. The effect is a pulse of current for each photon. Typical amplification or gain values for photodiodes operating in Geiger mode is > 10 5 .
  • SiPM Silicon Photomultiplier
  • a SiPM uses an array of photodiodes operating in Geiger mode and sums the electrical output of all the diodes. The net result is a series of pulses (from the diodes that have detected a photon) being added together. As individual diodes detect photons the summed output will increase or decrease. This produces an analogue electrical output which is proportional to the number of photons incident on the total sensor. The gain in this case is still > 10 5 .
  • a light sensor module comprising a plurality of light sensing elements arranged on a substrate, the module being operable in a mode of operation in which the elements cooperate in use to produce a combined output signal indicative of an overall level of light falling on the elements, wherein each element is arranged to make electrical connection to the substrate through the surface of the element that is arranged to faced towards the substrate, leaving the sides of the element substantially free, thereby enabling adjacent elements to sit closely together to form a close-tiled arrangement of the elements covering a large area.
  • Each element may comprise solid-state light sensing circuitry.
  • Each element may comprise a silicon die.
  • Each element may comprise low-voltage circuitry.
  • Each element may be adapted to produce an amplified electrical output signal which is substantially proportional to the optical input signal.
  • the output signal may be an analogue output signal.
  • Each element may comprise high-gain light sensing circuitry.
  • the gain may be greater than 10 3 .
  • the gain may be greater than 10 5 .
  • Each element may comprise Silicon Photomultiplier circuitry.
  • Each element may have a substantially rectangular footprint.
  • Adjacent elements may be arranged to abut each other.
  • the active area of each element may extend substantially to the edges of the element.
  • Each element may comprise shallow junction circuitry having electrical contacts on the opposed surface.
  • Each element may be prepared using a back thinning technique on a light input surface.
  • Each element may be flip-chip bonded to the substrate.
  • the module may comprise additional circuitry for providing additional functionality.
  • the additional circuitry may comprise processing circuitry for processing signals received from the elements.
  • the additional circuitry may comprise control circuitry for sending signals to the elements.
  • the additional circuitry may comprise interface circuitry for interfacing with external apparatus.
  • the additional circuitry may comprise capacitance decoupling circuitry.
  • the additional circuitry may be mounted on the opposed surface of the substrate.
  • the additional circuitry may be low-voltage circuitry.
  • the tiled arrangement may form an overall active area greater than 2 square cm in area.
  • the tiled arrangement may form an overall active area greater than 5 square cm in area.
  • the tiled arrangement may form an overall active area greater than 10 square cm in area.
  • Each element may comprise a light input surface arranged to face away from the substrate and an opposed surface arranged to face towards the substrate, and may be arranged to make electrical connection to the substrate through the opposed surface.
  • Each element may comprise a light input surface arranged to face towards the substrate and an opposed surface arranged to face away from the substrate, and may be arranged to make electrical connection to the substrate through the light input surface.
  • the module may be operable in a mode of operation in which different groups of elements are selectable to produce different output signals for those respective groups, whether at the same time or at different respective times or a combination thereof, where each group comprises one or more elements.
  • the module may be operable in a mode of operation in which each group comprises a single element, so that separate output signals are produced for the respective elements.
  • the module may comprise output circuitry operable to allow the output signals to be read out individually or multiplexed and read out sequentially as appropriate.
  • the module may comprise amplification circuitry to amplify one or more output signals before they are passed outside the module.
  • the module may comprise a connector for connecting to control circuitry arranged on a separate substrate.
  • Light sensor apparatus may be provided comprising such a light sensor module and the separate substrate on which the control circuitry is arranged.
  • Figure 1 shows a side-view of a light sensor module embodying the present invention
  • Figure 2 shows a side-view of a light sensor module not embodying the present invention for comparison with Figure 1 ;
  • Figure 3 illustrates a shallow junction diode design used in an embodiment of the present invention
  • Figure 4 illustrates the result of using a back thinning technique in an embodiment of the present invention
  • FIGS. 5 A and 5B are perspective views of a module embodying the present invention.
  • Figure 6 shows how a sensor module embodying the present invention can be secured to a light-collecting cone.
  • FIG. 1 shows a side-view of a light sensor module 1 embodying the present invention.
  • the light sensor module 1 comprises a plurality of light sensing elements 2 arranged on a substrate 4.
  • Each light sensing element 2 comprises Silicon Photomultiplier (SiPM) circuitry for light sensing and detection, as described above.
  • SiPM Silicon Photomultiplier
  • the light sensing elements 2 are arranged to cooperate to produce a combined output signal indicative of an overall level of light falling on the light sensing elements 2.
  • This output signal passes out of the module 1 through electrical connector 10 to external circuitry for processing, although processing circuitry can also be provided on the module 1 itself, as explained further below.
  • Each light sensing element 2 comprises a light input surface 16 arranged to face away from the substrate 4 and an opposed surface 18 arranged to face towards the substrate 4.
  • Each light sensing element 2 is arranged to make electrical connection to the substrate 4 through the opposed surface 18. This is important because it leaves the sides 19 of the light sensing element 2 substantially free. This enables adjacent light sensing elements 2 to sit closely together to form a close-tiled arrangement of light sensing elements 2. This results in a large active area.
  • Figure 2 is an equivalent module shown for comparison in which this feature is not present.
  • the module in Figure 2 does not embody the present invention.
  • electrical connection is made in a conventional manner through the top surface by wires (wire bonding) that can only reach the substrate 4 by passing the sides of the light sensing elements 2. This results in a much sparser tiling of light sensing elements 2 on the substrate 2. Requiring sufficient space around each light sensing element 2 to make contact to the substrate results in significant space between the individual light sensing elements 2, and hence a very low fill factor.
  • a number of light sensing elements 2 are tiled closely together to produce a very large active area. Tiling individual light sensing elements 2 in this manner reduces the amount of dead space between them. A number of features contribute to achieve this technical advantage in this embodiment of the present invention.
  • a back thinning technique is employed, in which the back of the silicon die is thinned to enable the light to be applied from the back side the die. This is illustrated in stage 1 of Figure 4, using one diode to show the processes and steps required for back thinning.
  • each SiPM is an array of such diodes, with the overall devices having two or more contacts or ball bumps.
  • Back thinning also has the effect of significantly increasing the Quantum Efficiency of the sensor, compared to normal or front illumination. Further information can be found in "Wafer Thinning: Techniques for Ultra-thin Wafers” by Manfred Reiche and Gerald Wagner, Advanced Packaging, 21/2/05, and "Temporary bonding technology improves thin wafer handling" by V. Dragoi, C. Schaefer, P. Lindner, M. Wimplinger, and S. Farrens , Solid State technology, March 04.
  • the silicon dies forming the SiPM light sensing elements 2 are flip-chipped onto the substrate 4.
  • This technique is well known, and uses a process of applying solder bumps to the contacts and then flip-chip bonding the dies to the substrate 4.
  • Figure 1 shows the solder bumps 8 and how the light sensing elements 2 are flip- chipped onto the substrate 4.
  • the back side of the die is arranged to be the light input surface
  • the front side of the die is arranged to be the opposed surface
  • the contacts are located directly behind the active area, ensuring that there is minimal dead space and the active area extends to the edges of the die.
  • Figures 5 A and 5B are perspective views of the module 1 embodying the present invention.
  • Figure 5 A is a perspective view showing the light input side of the module 1
  • Figure 5B is a perspective view showing the opposed side of the module 1.
  • Figures 5 A and 5B illustrate the highly compact and convenient design of a sensor module 1 embodying the present invention. This is partly achieved through the close tiling advantage described above, but is also partly achieved through the use of a double-sided substrate 4 (for example, PCB or Ceramic). This allows the array of light sensing elements 2 to be arranged on one side, and other circuitry on the opposed side.
  • a double-sided substrate 4 for example, PCB or Ceramic. This allows the array of light sensing elements 2 to be arranged on one side, and other circuitry on the opposed side.
  • the circuitry on the opposed side of the substrate 4 is referenced generally by numeral 12 in Figure 5B, but also includes capacitance decoupling circuitry referenced separately by numeral 6.
  • the capacitance decoupling circuitry 6 helps to alleviate the impact of the relatively large capacitance resulting from the large overall active area, and therefore capacitance, of the sensor module 1, thereby ensuring a fast overall signal response time.
  • This circuitry 6 is conveniently added to the opposed side of the module 1 for compactness, but this is not essential.
  • Another problem that the invention overcomes is the fact that a large area sensor has a very high capacitance. This capacitance slows down the overall speed of the detector. By tiling the detectors together it is possible to sum several different detectors through independent summing electronics. This means a larger area for sensing while still maintaining speed.
  • An important benefit resulting from the particular sensor module design embodying the present invention is that it allows for the convenient addition of extra iunctionality to the module according to the particular application in hand.
  • the additional functionality is provided by the circuitry 6, which is preferably added to the opposed side of the sensor module, away from the light sensing circuitry. This feature allows the addition of a great deal of extra processing capability directly onto the module itself, whilst maintaining an extremely compact module size.
  • Examples of the extra functionality that can be provided are digitalisation of the analogue signal, signal processing, including signal amplitude and rise time extraction, time stamping, and the provision of a bus interface. Many other add-ons would be possible.
  • An embodiment of the present invention results in a sensor module that can in practice be used as a "black box" replacement for a conventional PMT, and can be manufactured to the same industry-standard dimensions (e.g. 5cm x 5cm ). This enables a direct replacement for the conventional PMT, providing large area, large gain, fast signal response and additional functionality for specific applications in a small portable, low power module.
  • Figure 6 shows how a sensor module 1 can be secured to a well known light collecting funnel or cone 22 by way of bolts 16 and guides 17 mating with slots 14 provided in the substrate 4 (see also Figures 5 A and 5B). To ensure the module 1 is oriented correctly, different size bolts 16 and guides 17 can be used which match the correct corresponding respective slots 14. The active area of the module 1 is placed at the cone input 24 facing into the cone 22. Contacts 20 are used to supply power to the circuit, for interface signals or electrical bus interface.
  • the above embodiments show the sensing elements connected to the substrate on one side, with the other side being used to collect light. It is also possible to have the electrical connections on the same side as the light input surface, with light arriving through the substrate. It is also possible to have the electrical connections on the opposite side as the light input surface, with light input surface facing the substrate; this can be achieved for example using through-die vias. Different sensing elements on the same module can use different such techniques.
  • the tiled sensing elements can be read out individually or separately, as well as read out together through a combined signal as described above. This would allow the device to be read out as one large detector, or as an imaging array.
  • the sensing elements could also be combined in various groupings, each grouping producing a separate combined output signal, where a grouping includes one or more sensing element. These groupings could be changed over time as required.
  • sensing elements tiled on one substrate and control or other circuitry placed on a separate substrate, connected via appropriate electrical connections. This would result in a device having two substrates, for example one with the detector on the top and the other below that in which the electronics would be housed.
  • an embodiment of the present invention provides a solution for large area, large gain APDs (Avalanche Photodiode) used for low light detectors and photon counting.
  • An embodiment of the present invention overcomes certain issues associated with conventional (large area, large gain) APDs by using arrays of SiPMs (Silicon Photomultipliers) in a convenient package combined with appropriate electronics.
  • the resulting sensor module can be considered a 'black box" solution providing a "virtual" large area, large gain APD.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne un module de capteur de rayonnement (1) comprenant une pluralité d'éléments de détection de rayonnement (2) disposés sur un substrat (4). Le module peut être mis en oeuvre selon un mode de fonctionnement selon lequel les éléments coopèrent pendant l'utilisation aux fins de production d'un signal de sortie combiné indiquant un niveau global de rayonnement tombant sur les éléments (2). Dans un exemple, chaque élément (2) comprend une surface d'entrée de rayonnement (16) disposée de manière être opposée au substrat (4) et une surface opposée (18) disposée de manière à être en face du substrat (4). Chaque élément (2) est disposé de manière à établir une connexion électrique (8) avec le substrat (4) par le biais de la surface opposée (18), laissant les côtés (19) de l'élément (2) sensiblement libres, de manière que les éléments adjacents (2) puissent être proches les uns des autres, afin de former un agencement en mosaïque de ceux-ci (2) couvrant une zone importante.
PCT/GB2006/050123 2005-05-27 2006-05-26 Module de capteur de rayonnement Ceased WO2006126027A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0510760.2 2005-05-27
GB0510760A GB2426576A (en) 2005-05-27 2005-05-27 Light sensor module comprising a plurality of elements in a close-tiled arrangement

Publications (2)

Publication Number Publication Date
WO2006126027A2 true WO2006126027A2 (fr) 2006-11-30
WO2006126027A3 WO2006126027A3 (fr) 2007-02-22

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WO (1) WO2006126027A2 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009076730A3 (fr) * 2007-12-14 2009-09-24 Technology & Design B.V.B.A. Élément capteur pour un dispositif de tri et procédé permettant de trier des produits
US7759623B2 (en) 2004-05-05 2010-07-20 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Silicon photoelectric multiplier (variants) and a cell for silicon photoelectric multiplier
DE102009030467A1 (de) 2009-06-23 2011-01-05 Carl Zeiss Meditec Ag Vorrichtung und Verfahren zur Aufnahme hochdynamischer Fundus- und Spaltbilder
WO2011048290A2 (fr) 2009-10-22 2011-04-28 Axint Boitier a sondes multiples pour la detection multisites de radioactivite gamma
US8420433B2 (en) 2007-07-30 2013-04-16 Sensl Technologies, Ltd. Tiled light sensing array
JP2016154260A (ja) * 2016-04-25 2016-08-25 浜松ホトニクス株式会社 半導体光検出素子
US9748428B2 (en) 2011-10-21 2017-08-29 Hamamatsu Photonics K.K. Light detection device including a semiconductor light detection element with a through-hole electrode connection, a mounting substrate and a light-transmissive substrate
US9810795B2 (en) 2007-08-10 2017-11-07 Sensl Technologies Ltd. Method and apparatus to minimise the onset and recovery time of a silicon photomultiplier
US9825071B2 (en) 2011-10-21 2017-11-21 Hamamatsu Photonics K.K. Light detection device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5895504B2 (ja) 2011-12-15 2016-03-30 ソニー株式会社 撮像パネルおよび撮像処理システム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252852A (en) * 1989-03-14 1993-10-12 Fujitsu Limited Semiconductor device having flip chip bonding pads matched with pin photodiodes in a symmetrical layout configuration
GB0216075D0 (en) * 2002-07-11 2002-08-21 Qinetiq Ltd Photodetector circuits
ATE401666T1 (de) * 2002-09-19 2008-08-15 Quantum Semiconductor Llc Licht-detektierende vorrichtung
AU2003289994A1 (en) * 2002-12-09 2004-06-30 Carlos J.R.P. Augusto Circuitry for image sensors with avalanche photodiodes
US7341921B2 (en) * 2003-05-14 2008-03-11 University College Cork - National University Of Ireland, Cork Photodiode

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7759623B2 (en) 2004-05-05 2010-07-20 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Silicon photoelectric multiplier (variants) and a cell for silicon photoelectric multiplier
US8420433B2 (en) 2007-07-30 2013-04-16 Sensl Technologies, Ltd. Tiled light sensing array
US9810795B2 (en) 2007-08-10 2017-11-07 Sensl Technologies Ltd. Method and apparatus to minimise the onset and recovery time of a silicon photomultiplier
WO2009076730A3 (fr) * 2007-12-14 2009-09-24 Technology & Design B.V.B.A. Élément capteur pour un dispositif de tri et procédé permettant de trier des produits
US8564766B2 (en) 2007-12-14 2013-10-22 Best 2 Nv Sensor element for a sorting device and method for sorting products
DE102009030467A1 (de) 2009-06-23 2011-01-05 Carl Zeiss Meditec Ag Vorrichtung und Verfahren zur Aufnahme hochdynamischer Fundus- und Spaltbilder
WO2011048290A2 (fr) 2009-10-22 2011-04-28 Axint Boitier a sondes multiples pour la detection multisites de radioactivite gamma
US9748428B2 (en) 2011-10-21 2017-08-29 Hamamatsu Photonics K.K. Light detection device including a semiconductor light detection element with a through-hole electrode connection, a mounting substrate and a light-transmissive substrate
US9773935B2 (en) 2011-10-21 2017-09-26 Hamamatsu Photonics K.K. Light detection device including a semiconductor light detection element, and a semiconductor light detection element having a through-hole electrode connection
US9825071B2 (en) 2011-10-21 2017-11-21 Hamamatsu Photonics K.K. Light detection device
JP2016154260A (ja) * 2016-04-25 2016-08-25 浜松ホトニクス株式会社 半導体光検出素子

Also Published As

Publication number Publication date
GB2426576A (en) 2006-11-29
WO2006126027A3 (fr) 2007-02-22
GB0510760D0 (en) 2005-06-29

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